IRF8313TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 9.7 A, 9.7 A, 0.0125 ohm
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 9.7A
- Continuous Drain Current Id P Channel: 9.7A
- Drain Source On State Resistance N Channel: 0.0125ohm
- Drain Source On State Resistance P Channel: 0.0125ohm
| Delivery and price | |
|---|---|
| Units per pack | 12000 |
| Price | 0.249 € |
| Current stock | 10+ |
| Lead time | 30 days |
97145
## IRF8313PbF
## **Applications**
Load Switch DC/DC Conversion
|**VDSS**<br>**30V**<br>~~es~~|HEXFET<br>Power MOSFET<br>**RDS(on) max**<br>**Qg**<br>**15.5m @VGS = 10V 6.0nC**|
|---|---|
## **Benefits**
Low Gate Charge and Low RDS(on) Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% Tested for RG Lead-Free (Qualified to 260°C Reflow) RoHS Compliant (Halogen Free)
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S2 1 8 D2<br>G2 2 7 D2<br>S1 3 6 D1<br>G1 4 5 D1<br>SO-8<br>**----- End of picture text -----**<br>
## **Description**
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
|~~TT~~<br>~~LS~~<br>~~—p+~~|**Parameter**<br>~~TT~~<br>~~—p+~~<br>~~yp~~|**Max.**<br>~~TT~~<br>~~yp~~|**Units**<br>~~TT~~<br>~~EEE~~|
|---|---|---|---|
|VDS<br>~~LS~~<br>~~—p+~~|Drain-to-Source Voltage<br>~~—p+~~<br>~~yp~~|30<br>~~yp~~|V<br>~~EEE~~|
|VGS<br>~~LS~~<br>~~—p+~~|Gate-to-Source Voltage<br>~~—p+~~<br>~~yp~~|±20<br>~~yp~~||
|ID@ TA= 25°C<br>~~—p+~~<br>~~or~~<br>~~LS~~|Continuous Drain Current, VGS@ 10V<br>~~—p+~~<br>~~yp~~<br>~~or~~<br>~~C~~|9.7<br>~~yp~~<br>~~or~~|A<br>~~or~~|
|ID@ TA= 70°C<br>~~or~~<br>~~LS~~|Continuous Drain Current, VGS@ 10V<br>~~or~~<br>~~C~~|8.1<br>~~or~~||
|IDM<br>~~or~~<br>~~LS~~<br>~~—p+~~|Pulsed Drain Current<br>~~or~~<br>~~C~~<br>~~—p+~~<br>~~yp~~|81<br>~~or~~<br>~~yp~~||
|PD@TA= 25°C<br>~~I~~<br>~~—p+~~|Power Dissipation<br>~~PT~~<br>~~—p+~~<br>~~yp~~|2.0<br>~~PT~~<br>~~yp~~|W|
|PD@TA= 70°C<br>~~—p+~~|Power Dissipation<br>~~—p+~~<br>~~yp~~|1.3<br>~~yp~~||
|~~—p+~~<br>~~a~~|Linear Derating Factor<br>~~—p+~~<br>~~yp~~<br>~~a~~|0.016<br>~~yp~~<br>~~a~~|W/°C<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to + 175|°C|
## **Thermal Resistance**
|~~OT~~|**Parameter**<br>~~OT~~|**Typ.**<br>~~OT~~|**Max.**<br>~~OT~~|**Units**<br>~~OT~~|
|---|---|---|---|---|
|RθJL<br>~~a~~<br>~~[Ts~~|Junction-to-Drain Lead<br>~~[Ts~~|–––<br>~~LE~~|42<br>~~LE~~|°C/W|
|RθJA<br>~~[Ts~~|Junction-to-Ambient<br>~~[Ts~~|–––<br>~~LE~~|62.5<br>~~LE~~||
_ORDERING INFORMATION:_
_See detailed ordering and shipping information on the last page of this data sheet._
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1 11/5/08
**Static @ TJ = 25°C (unless otherwise specified)**
|~~es~~<br>~~es~~<br>~~es~~|**Parameter**<br>~~es~~<br>~~GO~~<br>|**Min.**<br>~~es~~<br>~~GO~~<br>~~O~~|**Typ.**<br>~~es~~<br>~~GO~~<br>~~**G**O GOO~~|**Max. **<br>~~es~~<br>~~GO~~<br>~~GOO~~|**Units**<br>~~es~~<br>~~CO~~<br>~~GOO~~|**Conditions**<br>~~es~~<br>~~CO~~<br>~~GOO~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~GO~~<br>~~ee~~|30<br>~~es~~<br>~~GO~~<br>~~O~~|–––<br>~~es~~<br>~~GO~~<br>~~**G**O GOO~~<br>~~O~~|–––<br>~~es~~<br>~~GO~~<br>~~GOO~~<br>~~O GO~~|V<br>~~es~~<br>~~CO~~<br>~~GOO~~<br>~~GO~~|VGS= 0V,ID= 250μA<br>~~es~~<br>~~CO~~<br>~~GOO~~<br>~~GO~~|
|ΔΒVDSS/ΔTJ<br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~ee~~|–––<br>~~GO~~<br>~~O~~|0.021<br>~~GO ~~<br>~~**G**O GOO~~<br>~~O~~|–––<br> ~~GO ~~<br>~~GOO~~<br>~~O GO~~|V/°C<br> ~~CO~~<br>~~GOO~~<br>~~GO~~|Reference to 25°C,ID= 1mA<br>~~CO~~<br>~~GOO~~<br>~~GO~~|
|RDS(on)<br>~~es ~~<br>~~|]~~<br>~~**e**e es~~<br>~~s~~|Static Drain-to-Source On-Resistance<br>~~GO~~<br> ~~ee~~<br>~~|]~~<br>~~es~~<br>|–––<br>~~O ~~<br>~~|]~~|12.5<br> ~~**G**O GOO~~<br>~~O~~<br>~~|]~~|15.5<br>~~GOO~~<br>~~O GO~~<br>~~|]~~|mΩ<br>~~GOO~~<br>~~GO~~<br>~~|]~~<br>|VGS= 10V,ID= 9.7A<br>~~GOO~~<br>~~GO~~<br>~~|]~~|
|||–––<br>~~|]~~<br>~~PTT~~<br>~~Od~~<br>|18.6<br>~~|]~~<br>~~PTT~~<br>|21.6<br>~~|]~~<br>~~PTT~~<br>||VGS= 4.5V,ID= 8.0A<br>~~|]~~|
|VGS(th)<br>~~|]~~<br>~~**e**e es~~<br>~~s~~|Gate Threshold Voltage<br>~~|]~~<br>~~es~~<br>|1.35<br>~~|]~~<br>~~PTT~~<br>~~Od~~<br>|1.80<br>~~|]~~<br>~~PTT~~<br>|2.35<br>~~|]~~<br>~~PTT~~<br>|V<br>~~|]~~<br>|VDS= VGS, ID= 25μA<br>~~|]~~<br>~~]~~|
|ΔVGS(th)<br>~~**e**e es~~<br>~~s~~|Gate Threshold Voltage Coefficient<br>~~es~~<br>~~es~~|–––<br>~~PTT~~<br>~~Od~~<br>~~es~~|-6.0<br>~~PTT~~<br>~~es~~|–––<br>~~PTT~~<br>~~es~~<br>~~|~~|mV/°C<br>~~es~~<br>~~|]~~||
|IDSS<br>~~**e**e es~~<br>~~s~~<br>~~ee~~<br>~~Se _~~|Drain-to-Source Leakage Current<br>~~es ~~<br>~~es~~<br>~~ee~~<br>~~_~~|–––<br>~~PTT~~<br> ~~Od~~<br>~~es~~<br>~~ee~~|–––<br>~~PTT~~<br>~~es~~<br>~~ee~~|1.0<br>~~PTT~~<br>~~es~~<br>~~ee~~<br>~~|~~|μA<br>~~es~~<br>~~ee~~<br>~~|]~~<br><br>~~O/—~~|VDS= 24V,VGS= 0V<br>~~ee~~<br>~~]~~|
|||–––<br>~~ee~~<br>~~PTT~~|–––<br>~~ee~~<br>~~PTT~~<br>~~]~~|150<br>~~ee~~<br>~~|~~<br>~~PTT~~<br>~~]~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>~~]~~<br>~~PO~~<br>~~O/—~~|
|IGSS<br>~~ee~~<br>~~Se _~~<br>~~es~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~_~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~PTT~~<br>~~ee~~|–––<br>~~ee~~<br>~~PTT~~<br>~~]~~<br>~~ee~~|100<br>~~ee~~<br>~~|~~<br>~~PTT~~<br>~~]~~|nA<br>~~ee~~<br>~~|]~~<br><br>~~O/—~~<br>~~C~~|VGS= 20V<br>~~ee~~<br>~~]~~<br>~~PO~~<br>~~O/—~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~_~~<br>~~ee~~<br>~~a~~<br>|–––<br>~~PTT~~<br>~~ee~~<br>~~GO~~<br>|–––<br>~~PTT~~<br>~~]~~<br>~~ee~~<br>~~GO~~<br>|-100<br>~~PTT~~<br>~~]~~<br>~~GO C~~<br>||VGS= -20V<br>~~PO~~<br>~~O/—~~<br>~~PO~~<br>~~CO~~|
|gfs<br>~~Se _~~<br>~~es~~<br>~~es~~|Forward Transconductance<br>~~_~~<br>~~ee~~<br>~~a~~<br>|23<br>~~PTT~~<br>~~ee~~<br>~~GO~~<br>|–––<br>~~PTT~~<br>~~]~~<br>~~ee~~<br>~~GO~~<br>|–––<br>~~PTT ~~<br>~~]~~<br>~~GO C~~<br>|S<br> <br>~~O/—~~<br>~~C~~|VDS= 15V,ID= 8.0A<br> ~~PO~~<br>~~O/—~~<br>~~PO~~<br>~~CO~~|
|Qg<br>~~es~~<br>~~es~~<br>~~es~~|Total Gate Charge<br>~~ee ~~<br>~~a~~<br>~~es~~|–––<br> ~~ee ~~<br>~~GO~~<br>~~es~~|6.0<br> ~~ee~~<br>~~GO~~<br>~~es~~|9.0<br>~~GO C~~<br>~~es~~|nC<br>~~C~~<br>~~GO~~|See Figs. 17a & 17b<br>ID= 8.0A<br>VGS= 4.5V<br>VDS= 15V<br>~~PO~~<br>~~CO~~<br>~~GO~~|
|Qgs1<br><br>~~es~~<br>~~es~~<br>~~es~~|Pre-Vth Gate-to-Source Charge<br>~~a~~<br>~~es~~|–––<br>~~GO ~~<br>~~es~~|1.5<br> ~~GO ~~<br>~~es~~|–––<br> ~~GO C~~<br>~~es~~|||
|Qgs2<br><br>~~es~~<br>~~es~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|0.9<br>~~es~~|–––<br>~~es~~|||
|Qgd<br>~~es~~<br>~~es~~<br>~~es~~|Gate-to-Drain Charge|–––|2.2|–––|||
|Qgodr<br>~~es~~<br>~~es~~<br>~~es~~|Gate Charge Overdrive|–––|1.4|–––|||
|Qsw<br>~~es~~<br>~~es~~<br>~~es~~|Switch Charge(Qgs2+ Qgd)<br>~~ee~~|–––|2.9<br>~~GO~~|–––<br>~~GO GO~~|||
|Qoss<br>~~es~~<br>~~es~~<br>~~es~~|Output Charge<br>~~ee~~<br>~~GO~~|–––<br>~~GO~~|3.8<br>~~GO~~<br>~~GG~~|–––<br>~~GO GO~~<br>~~GG~~|nC<br>~~GO~~<br>|VDS= 16V,VGS= 0V<br>~~GO~~<br>|
|Rg<br>~~es ~~<br>~~es~~<br>~~es~~|Gate Resistance<br> ~~ee~~<br>~~GO~~|–––<br>~~GO~~|2.2<br>~~GO~~<br>~~GG~~|3.6<br>~~GO GO~~<br>~~GGC~~|Ω<br>~~GO~~<br>~~C~~|~~GO~~<br>~~CO~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-On DelayTime<br>~~GO~~|–––<br>~~GO ~~|8.3<br> ~~GG~~|–––<br>~~GGC~~|ns<br>~~C~~|RG= 1.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 8.0A<br>See Fig. 15a & 15b<br>~~CO~~|
|tr<br>~~es~~<br>~~es~~<br>~~es~~|Rise Time<br>|–––<br>|9.9<br>|–––<br>~~C~~|||
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime|–––|8.5|–––|||
|tf<br>~~es~~<br>~~es~~<br>~~es~~|Fall Time|–––|4.2|–––|||
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance|–––|760|–––|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance|–––|172|–––|||
|Crss<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance|–––|87|–––|||
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100 100<br>VGS VGS<br>TOP 10V TOP 10V<br>5.0V 5.0V<br>4.5V 4.5V<br>3.5V 3.5V<br>10 Z o 3.0V |ff 3.0V<br>2.7V 2.7V<br>2.5V 10 2.5V<br>Z ima BOTTOM 2.3V Z am BOTTOM 2.3V<br>aarti Za<br>1<br>e ae 1 a<br>2.3V<br>0.1<br>≤60μs PULSE WIDTH<br>S ean a antiis S<br>Tj = 25°C<br>≤60μs PULSE WIDTH<br>2.3V Tj = 175°C<br>0.01 Sw ett) = 0.1 Ee<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 2.0<br>ID = 9.8A<br>VGS = 10V<br>10<br>aSs TJ = 175°C 2e= eee<br>1.5<br>py / A<br>SF ff 1<br>1<br>iff<br>TJ = 25°C i tt Yh ey<br>1.0<br>PAL<br>0.1 | Ape<br>VDS = 15V<br>≤60μs PULSE WIDTH<br>0.01 PA RE} 0.5 PLLELLELLLEL<br>1 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Normalized On-Resistance vs. Temperature
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10000 16<br>VGS = 0V, f = 1 MHZ<br>Ciss = Cgs + Cgd, Cds SHORTED ID= 8.0A<br>Crss = Cgd VDS= 24V<br>Coss = Cds + Cgd 12 VDS= 15V<br>1000 Ciss<br>Coss 8<br>100 a h Crss gu a 4<br>FPAPU CEIAFA FATAI 40 AT|Lf |i].<br>10<br>0 2 4 6 8 10 12 14<br>0.1 1 10 100<br> Qg, Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>TJ = 175°C<br>100<br>10 F ER ZEERE eet<br>10 0μ sec<br>1m sec<br>Peyr| 10 t<br>TJ = 25°C<br>1 0 msec<br>1<br>1<br>TA = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>P T ] aR<br>0.1 p Pt 0.1 Pos tT<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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10 2.5<br>8 PN EE Se ID = 250μA<br>2.0<br>6 LEEPANUEL LL EKNS ID = 25μA<br>NO PPR<br>1.5<br>4 TET<br>2 ALLELE NN 1.0 Eo SARC<br>LE LIN, HLELLETENNS<br>0 TPE Ss 0.5 FETS<br>25 50 75 100 125 150 175<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TA, Ambient Temperature (°C)<br>TJ , Temperature ( °C )<br>Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature<br>Ambient Temperature<br>100<br>LL) D = 0.50 A er<br>10 L 0.20 TCC||<br>0.10 Ri (°C/W) τι (sec)<br>||| 0.05 Lae arn Rat | 0.13960390.4048955 ee 0.0000100.000030 |<br>1 Sat 0.02 0.01 Seer τJ R 1 R1 R 2 R2 R 3 R3 R 4 R4 R 5R5 R 6R6 R 7R7 R 8R8 — 0.5273926 1.2084906 0.000020 0.001289<br>τJ τa 1.5779475 0.000340<br>Seti LTE PZT τ1τ1 | τ2τ2 | τ3τ3 | τ4τ4 τ5τ5 τ6τ6 l τ7τ7 τ8τ8 ——a 18.01026797.0394610 27.7983410.009747 |<br>0.1 Ci= τi/Ri 33.5929564 0.575346<br>SINGLE PULSE Ci i/Ri<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>0.01 VARGA ee || | || 2. Peak Tj = P dm x Zthja + Tc ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>VGS(th), Gate Threshold Voltage (V)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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38 200<br>ID = 9.8A I D<br>34 TOP 3.0A<br>160 5.0A<br>BOTTOM 8.0A<br>30<br>26 tTse 120 ]cane<br>22<br>80<br>18 A T J = 125°C RN<br>14 TJ = 25 ° C 40<br>HNSsey IAN<br>ee<br>10<br>0<br>2.0 4.0 6.0 8.0 10.0<br>25 50 75 100 125 150 175<br>VGS, Gate-to-Source Voltage (V)<br>Starting TJ, Junction Temperature (°C)<br>)Ω<br>RDS(on), Drain-to -Source On Resistance (m EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 12.** On-Resistance vs. Gate Voltage
**Fig 13.** Maximum Avalanche Energy vs. Drain Current
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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>
**Fig 14a.** Unclamped Inductive Test Circuit
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+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>
**Fig 15a.** Switching Time Test Circuit
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V(BR)DSS<br>tp<br>IAS<br> Unclamped Inductive Waveforms<br>VDS<br>90%<br>i<br>10% /\ |<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 14b.** Unclamped Inductive Waveforms
**Fig 15b.** Switching Time Waveforms www.irf.com
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Driver Gate Drive<br>P.W.<br>D.U.T + {{ P.W. Period —_—_ — D = —— Period<br>) [©)] • Circuit Layout Considerations |t V | GS=10V<br>| | - • LowGround StrayPlane Inductance<br> • Low Leakage Inductance @® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oat - Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 = VDD<br>ma<br>• Re-Applied<br>Re ) • dv/dtDriver controlledsame type byas RgD.U.T. Vpp + Voltage Body Diode Forward Drop<br>• - Inductor Curent<br>•<br>D.U.T. - Device Under Test OO<br>Ripple ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>* Veg = 5V for Logic Level Devices<br>Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>20K1K S Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>
**Fig 17a.** Gate Charge Test Circuit
**Fig 17b.** Gate Charge Waveform
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## **SO-8 Package Outline**
Dimensions are shown in milimeters (inches)
NOTES:
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INCH E S MILLIME T E RS<br>DIM<br>D B MIN MAX MIN MAX<br>a So<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>aan 8 7 6 5 === c .0075 .0098 0.19 0.25<br>6 H D .189 .1968 4.80 5.00<br>E<br>1 2 3 4 0.25 [.010] A a E .1497 .1574 3.80 4.00<br>e .050 B AS IC 1.27 B AS IC<br>A e 1 .025 B AS IC 0.635 B AS IC<br>a || eeai H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X — e Job ii L .016 .050 0.40 1.27<br>i y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>C<br>y<br>||. 8X b Ff A1 [esl 0.10 [.004] ) 8X L 8X c 1<br>0.25 [.010] C A B 7<br>FOOTPRINT<br>8X 0.72 [.028]<br>**----- End of picture text -----**<br>
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
- 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
- O 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.
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6.46 [.255]<br>| |<br>00002<br>3X 1.27 [.050] ee<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## **SO-8 Part Marking Information**
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW) / P = DISGNATES LEAD - FREE PRODUCT (OPTIONAL) HAA AY Y = LAST DIGIT OF THE YEAR WW = WEEK XXXX A = ASSEMBLY SITE CODE INTERNATIONAL F7101 RECTIFIER LOT CODE LOGO PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
8
## **SO-8 Tape and Reel**
Dimensions are shown in milimeters (inches)
**==> picture [54 x 5] intentionally omitted <==**
**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>**----- End of picture text -----**<br>
**==> picture [226 x 93] intentionally omitted <==**
**----- Start of picture text -----**<br>
12.3 ( .484 )<br>11.7 ( .461 )<br>cE<br>8.1 ( .318 )<br>7.9 ( .312 ) _ FEED DIRECTION<br>NOTES:<br>**----- End of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**==> picture [229 x 85] intentionally omitted <==**
**----- Start of picture text -----**<br>
330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.43mH, RG = 25Ω, IAS = 8.0A. Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board. Rθ is measured at Ty of approximately 90°C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
|**Orderable Part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF8313PbF|SO-8|Tube/Bulk|95||
|IRF8313TRPbF|SO-8|Tape andReel|4000||
## **Qualification Information[†]**
|**Qualification Information[†]**|||
|---|---|---|
|**Qualification Level**|Consumer††<br>(per JEDEC JESD47F††† guidelines)||
|**Moisture Sensitivity Level**|SO-8|MSL1<br>(per JEDEC J-STD-020D†††)|
|**RoHS Compliant**|Yes||
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/08
www.irf.com
10
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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