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IRF830PBF-BE3
MOSFET, N-CH, 500V, 4.5A, TO-220AB
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Thr 78AH6384
- No. of Pins: 3Pins
- Qualification: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.581 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**IRF830, SiHF830** Vishay Siliconix www.vishay.com ## **Power MOSFET** ## **FEATURES** **==> picture [509 x 349] intentionally omitted <==** **----- Start of picture text -----**<br> FEATURES<br>PRODUCT SUMMARY<br>• Dynamic dV/dt rating<br>VDS (V) 500 • Repetitive avalanche rated Available<br>RDS(on) ( ) VGS = 10 V 1.5<br>Qg max. (nC) 38 • Fast switching Available<br>Qgs (nC) 5.0 • Ease of paralleling<br>Qgd (nC) 22 • Simple drive requirements<br>Configuration Single • Material categorization: for definitions of compliance<br>=== please see www.vishay.com/doc?99912 °<br>D<br>Note<br>* This datasheet provides information about parts that are<br>TO-220AB RoHS-compliant and / or parts that are non-RoHS-compliant. For<br>example, parts with lead (Pb) terminations are not RoHS-compliant.<br>Please see the information / tables in this datasheet for details.<br>G<br>DESCRIPTION<br>Third generation power MOSFETs from Vishay provide the<br>G D S S designer with the best combination of fast switching, ruggedized ruggedized device design, low on-resistance and<br>N-Channel MOSFET cost-effectiveness.<br>The TO-220AB package is universally preferred for all<br>commercial-industrial applications at power dissipation<br>levels to approximately 50 W. The low thermal resistance<br>and low package cost of the TO-220AB contribute to its<br>wide acceptance throughout the industry.<br>ORDERING INFORMATION<br>Package TO-220AB<br>IRF830PbF<br>Lead (Pb)-free<br>SiHF830-E3<br>IRF830<br>SnPb<br>SiHF830<br>**----- End of picture text -----**<br> Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. |**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~|~~| |---|---|---|---|---|---| |**PARAMETER**<br>~~a~~<br>~~Sh~~|||**SYMBOL**<br>~~a~~<br>~~h~~|**LIMIT**<br>~~a~~|**UNIT**<br>~~a~~| |Drain-Source Voltage<br>~~Sh~~|||VDS<br>~~h~~|500|V<br>~~ee~~<br>| |Gate-Source Voltage<br>~~Sh~~<br>~~|~~<br>~~reee~~<br>~~**a**~~|||VGS<br>~~h~~<br>~~P~~<br>~~ee~~<br>|± 20<br>~~P~~<br>~~ee~~<br>|| |Continuous Drain Current<br>~~Sh~~<br>~~re~~<br>~~**a**~~|VGSat 10 V<br>~~h~~<br>~~|~~<br>~~ee~~<br>|TC= 25 °C<br>~~h~~<br>~~|~~<br>~~ee~~<br>|ID<br>~~h~~<br>~~P~~<br>~~ee~~<br>|4.5<br>~~P~~<br>~~ee~~<br>|A<br>~~ee~~<br>| |||TC= 100 °C<br>~~|~~<br>~~ee~~<br>||2.9<br>~~P~~<br>~~ee~~<br>|| |Pulsed Drain Currenta<br>~~|~~<br>~~reee~~<br>~~**a**~~|||IDM<br>~~P~~<br>~~ee~~<br>|18<br>~~P~~<br>~~ee~~<br>|| |Linear DeratingFactor<br>~~|~~<br>~~re ee~~<br>~~**a**~~|||~~P~~<br>~~ee~~<br>|0.59<br>~~P~~<br>~~ee~~<br>|W/°C<br>~~ee~~<br>| |Single Pulse Avalanche Energyb<br>~~I~~|||EAS<br>~~I~~|280<br>~~I~~|mJ<br>~~I~~| |Repetitive Avalanche Currenta<br>~~I~~|||IAR<br>~~I~~|4.5<br>~~I~~|A<br>~~I~~| |Repetitive Avalanche Energya<br>~~I~~<br>~~I~~|||EAR<br>~~I~~<br>~~I~~|7.4<br>~~I~~<br>~~I~~|mJ<br>~~I~~<br>~~I~~| |Maximum Power Dissipation<br>~~I~~|TC= 25 °C<br>~~I~~||PD<br>~~I~~|74<br>~~I~~|W<br>~~I~~| |Peak Diode Recovery dV/dtc<br>~~I~~<br>~~Ce~~|||dV/dt<br>~~I~~|3.5<br>~~I~~<br>~~ee~~|V/ns<br>~~I~~<br>~~ee~~| |OperatingJunction and Storage Temperature Range<br>~~Ce~~|||TJ, Tstg|-55 to +150<br>~~ee~~|°C<br>~~ee~~<br>~~eee~~| |SolderingRecommendations (Peak temperature)d<br>~~Ce~~<br>~~ee~~|for 10 s||~~ee~~|300<br>~~ee~~<br>~~ee~~|| |Mounting Torque<br>~~Ce~~<br>~~ee~~|6-32 or M3 screw||~~ee~~|10<br>~~ee~~<br>~~ee~~|lbf · in<br>~~ee~~<br>~~eee~~| |||||1.1<br>~~ee~~<br>~~ee~~|N · m<br>~~ee~~<br>~~eee~~| a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12). c. ISD 4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 Document Number: 91063 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830, SiHF830** www.vishay.com Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**| |Maximum Junction-to-Ambient|RthJA|-|62|°C/W| |Case-to-Sink, Flat, Greased Surface|RthCS|0.50|-|| |Maximum Junction-to-Case (Drain)|RthJC|-|1.7|| |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||500|-|-|V| |VDSTemperature Coefficient|VDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.61|-|V/°C| |Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 μA||2.0|-|4.0|V| |Gate-Source Leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA| |Zero Gate Voltage Drain Current|IDSS|VDS= 500 V, VGS= 0 V||-|-|25|μA| |||VDS= 400 V, VGS= 0 V, TJ= 125 °C||-|-|250|| |Drain-Source On-State Resistance|RDS(on)|VGS= 10 V|ID= 2.7 Ab|-|-|1.5|| |Forward Transconductance|gfs|VDS= 50 V, ID= 2.7 Ab||2.5|-|-|S| |**Dynamic**|||||||| |Input Capacitance|Ciss|VGS= 0 V,<br>VDS= 25 V,<br>f = 1.0 MHz, see fig. 5||-|610|-|pF| |Output Capacitance|Coss|||-|160|-|| |Reverse Transfer Capacitance|Crss|||-|68|-|| |Total Gate Charge|Qg|VGS= 10 V|ID= 3.1 A, VDS= 400 V,<br>see fig. 6 and 13b|-|-|38|nC| |Gate-Source Charge|Qgs|||-|-|5.0|| |Gate-Drain Charge|Qgd|||-|-|22|| |Turn-On Delay Time|td(on)|VDD= 250 V, ID= 3.1 A<br>Rg= 12, RD= 79, see fig. 10b||-|8.2|-|ns| |Rise Time|tr|||-|16|-|| |Turn-Off Delay Time|td(off)|||-|42|-|| |Fall Time|tf|||-|16|-|| |Internal Drain Inductance|LD|Between lead,<br>6 mm (0.25") from<br>package and center of<br>die contact<br>D<br>S<br>G||-|4.5|-|nH| |Internal Source Inductance|LS|||-|7.5|-|| |Gate Input Resistance|Rg|f = 1 MHz, open drain||0.5|-|2.7|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous Source-Drain Diode Current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|4.5|A| |Pulsed Diode Forward Currenta|ISM|||-|-|18|| |Body Diode Voltage|VSD|TJ= 25 °C, IS= 4.5 A, VGS= 0 Vb||-|-|1.6|V| |Body Diode Reverse Recovery Time|trr|TJ= 25 °C, IF= 3.1 A, dI/dt = 100 A/μsb||-|320|640|ns| |Body Diode Reverse Recovery Charge|Qrr|||-|1.0|2.0|μC| |Forward Turn-On Time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)|||||| ## **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-0754-Rev. C, 02-May-16 Document Number: 91063 **2** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830, SiHF830** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [199 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1] VGS<br>Top 15 V<br>10 V<br>8.0 V<br>7.0 V<br>6.0 V<br>5.5 V<br>5.0 V<br>10 [0] Bottom 4.5 V<br>4.5 V<br>20 µs Pulse Width<br>TC = 25 °C<br>10 [-1]<br>10 [0] 10 [1]<br>91063_01 VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 1 - Typical Output Characteristics, TC = 25 °C** **==> picture [207 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>ID = 3.1 A<br>VGS = 10 V<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>91063_04 TJ, Junction Temperature (°C)<br>(Normalized)<br>, Drain-to-Source On Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 4 - Normalized On-Resistance vs. Temperature** **==> picture [200 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1] VGS<br>Top 15 V<br>10 V<br>8.0 V<br>7.0 V<br>6.0 V<br>5.5 V<br>4.5 V<br>5.0 V<br>10 [0] Bottom 4.5 V<br>20 µs Pulse Width<br>10 [-1] TC = 150 °C<br>10 [0] 10 [1]<br>91063_02 VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 2 - Typical Output Characteristics, TC = 150 °C** **==> picture [199 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1500<br>V GS = 0 V, f = 1 MHz<br>1250 C C issrss = C = C gsgd + Cgd, Cds Shorted<br>Coss = Cds + Cgd<br>1000<br>750 C iss<br>500<br>C oss<br>250<br>Crss<br>0<br>10 [0] 10 [1]<br>91063_05 VDS, Drain-to-Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** **==> picture [203 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>150 ° C<br>25 °C<br>10 [0]<br>10 [-1] 20 µs Pulse Width<br>VDS = 50 V<br>4 5 6 7 8 9 10<br>91063_03 VGS, Gate-to-Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 3 - Typical Transfer Characteristics** **==> picture [202 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>ID = 3.1 A<br>16 V DS = 400 V<br>VDS = 250 V<br>12 V DS = 100 V<br>8<br>4<br>For test circuit<br>see figure 13<br>0<br>0 8 16 24 32 40<br>91063_06 QG, Total Gate Charge (nC)<br>, Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage** Document Number: 91063 S16-0754-Rev. C, 02-May-16 **3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830, SiHF830** www.vishay.com Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [203 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>150 °C<br>25 °C<br>10 [0]<br>V GS = 0 V<br>0.4 0.6 0.8 1.0 1.2<br>91063_07 VSD, Source-to-Drain Voltage (V)<br>, Reverse Drain Current (A)<br>ISD<br>**----- End of picture text -----**<br> **Fig. 7 - Typical Source-Drain Diode Forward Voltage** **==> picture [204 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0.0<br>25 50 75 100 125 150<br>91063_09 TC, Case Temperature (°C)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 9 - Maximum Drain Current vs. Case Temperature** **==> picture [443 x 419] intentionally omitted <==** **----- Start of picture text -----**<br> RD<br>1010 [2] 52 Operation in this area limitedby RDS(on) 10 µs RG VGS VDS D.U.T. +<br>5 100 µs - VDD<br>2<br>1 1 ms 10 V<br>5 10 ms Duty factor Pulse width ≤≤ 0.1 % 1 µs<br>2<br>0.1 Fig. 10a - Switching Time Test Circuit<br>5 T C = 25 ° C<br>2 T Single Pulse J = 150 ° C VDS<br>10 [-2] 0.1 2 5 1 2 5 10 2 5 102 [2] 5 103 2 5 104 90 %<br>91063_08 VDS, Drain-to-Source Voltage (V)<br> Fig. 8 - Maximum Safe Operating Area 10 %<br>VGS<br>td(on) tr td(off) tf<br> Fig. 10b - Switching Time Waveforms<br>10<br>1 0 - 0.5<br>0.2 PDM<br>0.1<br>0.1 0.05 t1<br>0.02 Single Pulse t 2<br>0.01 (Thermal Response) Notes:<br>1. Duty Factor, D = t 1 /t 2<br>2. Peak Tj = PDM x ZthJC + TC<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 0.1 1 10<br>91063_11 t1, Rectangular Pulse Duration (S)<br>, Drain Current (A)<br>ID<br>)JC<br>th<br>Thermal Response (Z<br>**----- End of picture text -----**<br> **Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case** S16-0754-Rev. C, 02-May-16 Document Number: 91063 **4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830, SiHF830** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com **==> picture [443 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> L V<br>(BR)DSS<br>VDS<br>Vary tp to obtain tp<br>required IAS VDD<br>RG D.U.T +<br>IAS - [V][DD] A VDS<br>10 V<br>tp 0.01 Ω<br>IAS<br>**----- End of picture text -----**<br> **Fig. 12a - Unclamped Inductive Test Circuit** **Fig. 12b - Unclamped Inductive Waveforms** **==> picture [204 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>ID<br>Top 2.0 A<br>500 2.8 A<br>Bottom 4.5 A<br>400<br>300<br>200<br>100<br>VDD = 50 V<br>0<br>25 50 75 100 125 150<br>91063_12c Starting TJ, Junction Temperature (°C)<br>, Single Pulse Energy (mJ)<br>AS<br>E<br>**----- End of picture text -----**<br> **Fig. 12c - Maximum Avalanche Energy vs. Drain Current** **==> picture [152 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> QG<br>10 V<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br> **Fig. 13a - Basic Gate Charge Waveform** **==> picture [145 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> Current regulator<br>Same type as D.U.T.<br>50 kΩ<br>12 V 0.2 µF<br>0.3 µF<br>+<br>D.U.T. - VDS<br>VGS<br>3 mA<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br> **Fig. 13b - Gate Charge Test Circuit** S16-0754-Rev. C, 02-May-16 Document Number: 91063 **5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830, SiHF830** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> **==> picture [286 x 494] intentionally omitted <==** **----- Start of picture text -----**<br> Peak Diode Recovery dV/dt Test Circuit<br>+ Circuit layout considerations<br>D.U.T.<br>• Low stray inductance<br>• Ground plane<br>• Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg • dV/dt controlled by Rg +<br>•• Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>• D.U.T. - device under test<br>Driver gate drive<br>Period D = P.W.<br>P.W. Period<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br> **Fig. 14 - For N-Channel** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91063._ S16-0754-Rev. C, 02-May-16 Document Number: 91063 **6** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** www.vishay.com Vishay Siliconix **TO-220-1** **==> picture [499 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> A MILLIMETERS INCHES<br>E DIM.<br>MIN. MAX. MIN. MAX.<br>F<br>A 4.24 4.65 0.167 0.183<br>Ø P b 0.69 1.02 0.027 0.040<br>b(1) 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.33 15.85 0.564 0.624<br>E 9.96 10.52 0.392 0.414<br>m et | SS<br>e 2.41 2.67 0.095 0.105<br>e(1) 4.88 5.28 0.192 0.208<br>F 1.14 1.40 0.045 0.055<br>H(1) 6.10 6.71 0.240 0.264<br>1 2 3<br>J(1) 2.41 2.92 0.095 0.115<br>L 13.36 14.40 0.526 0.567<br>L(1) 3.33 4.04 0.131 0.159<br>M [*] Ø P 3.53 3.94 0.139 0.155<br>Q 2.54 3.00 0.100 0.118<br>a b(1)<br>ECN: X15-0364-Rev. C, 14-Dec-15<br>DWG: 6031<br>Note<br>• M* = 0.052 inches to 0.064 inches (dimension including<br>protrusion), heatsink hole for HVM<br>C<br>b<br>e<br>7 | t J(1) | =———<br>oT e(1)<br>Package Picture<br>ASE Xi’an<br>———<br>Q<br>H(1)<br>D<br>L(1)<br>L<br>**----- End of picture text -----**<br> Revison: 14-Dec-15 Document Number: 66542 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 Document Number: 91000 **1**
Updated at March 14, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →