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IRF830BPBF
Power MOSFET, N Channel, 500 V, 5.3 A, 1.5 ohm, TO-220AB, Through Hole
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: To Be Advised
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: D
- Qualification: -
- Power Dissipation: 104W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 5.3A
- Drain Source On State Resistance: 1.5ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.424 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**IRF830B** www.vishay.com Vishay Siliconix ## **D Series Power MOSFET** **PRODUCT SUMMARY** VDS (V) at TJ max. 550 RDS(on) max. ( ) at 25 °C VGS = 10 V 1.5 Qg max. (nC) 20 Qgs (nC) 3 Qgd (nC) 5 Configuration Single ~~——_—~~ D **TO-220AB** G eS~ S D G S N-Channel MOSFET ## **FEATURES** - Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) - Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** - Consumer electronics - Displays (LCD or plasma TV) - Server and telecom power supplies - SMPS - Industrial - Welding - Induction heating - Motor drives - Battery chargers ## **ORDERING INFORMATION** |Package|TO-220AB| |---|---| |Lead (Pb)-free|IRF830BPbF| |**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~| |---|---|---|---|---|---| |**PARAMETER**<br>~~Cnoes~~|||**SYMBOL**<br>~~oes~~|**LIMIT**<br>~~oes~~|**UNIT**<br>~~oes~~| |Drain-Source Voltage<br>~~ee~~|||VDS|500<br>~~—~~|V<br>~~ee~~| |Gate-Source Voltage<br>~~ee~~<br>~~oe~~|||VGS<br>~~oe~~<br>~~ee~~|± 30<br>~~—~~<br>~~oe~~|| |Gate-Source Voltage AC (f > 1 Hz)<br>~~ee~~<br>~~oe~~<br>~~ee~~<br>~~ee~~||||30<br>~~—~~<br>~~oe~~<br>~~ee~~|| |Continuous Drain Current (TJ= 150 °C)<br>~~ee~~<br>~~oe~~<br>~~ee~~<br>~~ooo~~|VGSat 10 V<br>~~ee~~<br>~~oe~~<br>~~ooo~~|TC= 25 °C<br>~~ee~~<br>~~oe~~<br>~~ee~~|ID<br>~~oe~~<br>~~ee~~<br>~~ET~~|5.3<br>~~—~~<br>~~oe~~<br>~~ee~~|A<br>~~ee~~<br>~~ET~~<br>~~OM~~| |||TC= 100 °C<br>~~ee~~<br>~~ooo~~||3.4<br>~~ee~~<br>~~ET~~|| |Pulsed Drain Currenta<br>~~ee~~<br>~~ee~~<br>~~ooo~~<br>~~Too~~|||IDM<br>~~ee~~<br>~~ET~~|10<br>~~ee~~<br>~~ET~~<br>~~OM~~|| |Linear DeratingFactor<br>~~ee~~<br>~~ee~~<br>~~ooo~~<br>~~Too~~<br>~~ooo~~|||~~ee~~<br>~~ET~~|0.83<br>~~ee~~<br>~~ET~~<br>~~OM~~<br>~~OM~~|W/°C<br>~~ee~~<br>~~ET~~<br>~~OM~~<br>~~OM~~| |Single Pulse Avalanche Energyb<br>~~Too~~<br>~~ooo~~|||EAS<br>~~=~~|28.8<br>~~OM~~<br>~~OM~~<br>~~ET~~|mJ<br>~~OM~~<br>~~OM~~<br>~~ET~~| |Maximum Power Dissipation<br>~~ooo~~<br>~~TT~~|||PD<br>~~TT~~<br>~~=~~|104<br>~~OM~~<br>~~TT~~<br>~~ET~~|W<br>~~OM~~<br>~~TT~~<br>~~ET~~| |OperatingJunction and Storage Temperature Range<br>~~o>~~|||TJ, Tstg<br>~~= ~~<br>~~o>~~|-55 to +150<br> ~~ET~~<br>~~o>~~|°C<br>~~ET~~<br>~~o>~~| |Drain-Source Voltage Slope<br>~~o>~~|TJ= 125 °C<br>~~o>~~||dV/dt<br>~~o>~~|24<br>~~o>~~|V/ns<br>~~o>~~| |Reverse Diode dV/dtd||||0.28|| |Soldering Recommendations (Peak temperature)c<br>~~a~~|for 10 s|||300|°C| ## **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 5 A. - c. 1.6 mm from case. d. ISD ID, starting TJ = 25 °C. Document Number: 91520 S16-0109-Rev. B, 25-Jan-16 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830B** www.vishay.com Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**| |Maximum Junction-to-Ambient|RthJA|-|62|°C/W| |Maximum Junction-to-Case (Drain)|RthJC|-|1.2|| |**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||500|-|-|V| |VDSTemperature Coefficient|VDS/TJ|Reference to 25 °C, ID= 250 μA||-|0.58|-|V/°C| |Gate-Source Threshold Voltage (N)|VGS(th)|VDS= VGS, ID= 250 μA||3|-|5|V| |Gate-Source Leakage|IGSS|VGS= ± 30 V||-|-|± 100|nA| |Zero Gate Voltage Drain Current|IDSS|VDS= 500 V, VGS= 0 V||-|-|1|μA| |||VDS= 400 V, VGS= 0 V, TJ= 125 °C||-|-|10|| |Drain-Source On-State Resistance|RDS(on)|VGS= 10 V|ID= 2.5 A|-|1.2|1.5|| |Forward Transconductancea|gfs|VDS= 20 V, ID= 2.5 A||-|1.8|-|S| |**Dynamic**|||||||| |Input Capacitance|Ciss|VGS= 0 V,<br>VDS= 100 V,<br>f = 1 MHz||-|325|-|pF| |Output Capacitance|Coss|||-|34|-|| |Reverse Transfer Capacitance|Crss|||-|6|-|| |Effective Output Capacitance, Energy<br>Relatedb|Co(er)|VDS= 0 V to 400 V, VGS= 0 V||-|31|-|| |Effective Output Capacitance, Time<br>Relatedc|Co(tr)|||-|41|-|| |Total Gate Charge|Qg|VGS= 10 V|ID= 2.5 A, VDS= 400 V|-|10|20|nC| |Gate-Source Charge|Qgs|||-|3|-|| |Gate-Drain Charge|Qgd|||-|5|-|| |Turn-On Delay Time|td(on)|VDD= 400 V, ID= 2.5 A<br>Rg= 9.1, VGS= 10 V||-|12|24|ns| |Rise Time|tr|||-|11|22|| |Turn-Off Delay Time|td(off)|||-|14|28|| |Fall Time|tf|||-|11|22|| |Gate Input Resistance|Rg|f = 1 MHz, open drain||-|1.7|-|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous Source-Drain Diode Current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>P - N junction diode<br>S<br>D<br>G||-|-|5|A| |Pulsed Diode Forward Current|ISM|||-|-|20|| |Diode Forward Voltage|VSD|TJ= 25 °C, IS= 4 A, VGS= 0 V||-|-|1.2|V| |Reverse Recovery Time|trr|TJ= 25 °C, IF= IS= 2.5 A,<br>dI/dt = 100 A/μs, VR= 20 V||-|320|-|ns| |Reverse Recovery Charge|Qrr|||-|1.2|-|μC| |Reverse Recovery Current|IRRM|||-|8|-|A| ## **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature. b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S16-0109-Rev. B, 25-Jan-16 Document Number: 91520 **2** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830B** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [191 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>TOP 15 V14 V TJ = 25 °C<br>13 V<br>12 V<br>9 11 V<br>10 V<br> 9 V<br>6<br>8 V<br>3<br>7 V<br>6 V<br>0<br>0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V)<br>, Drain-to-Source Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 1 - Typical Output Characteristics** **==> picture [190 x 375] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>TOP 15 V<br>14 V TJ = 150 °C<br>13 V<br>12 V<br>6 11 V<br>10 V<br>9.0 V<br>8.0 V<br>7.0 V<br>4 6.0 V<br>5.0 V<br>2<br> 0<br>0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V)<br> Fig. 2 - Typical Output Characteristics<br>12<br>9<br>6<br>3 TJ = 150 °C<br>TJ = 25 °C<br>0<br>0 5 10 15 20 25<br>VGS, Gate-to-Source Voltage (V)<br>, Drain-to-Source Current (A)<br>ID<br>, Drain-to-Source Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [202 x 586] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>ID = 2.5 A<br>2.5<br>2<br>1.5<br>1 V GS = 10 V<br>0.5<br>0<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>TJ, Junction Temperature (°C)<br> Fig. 4 - Normalized On-Resistance vs. Temperature<br>1000<br>Ciss<br>V GS = 0 V, f = 1 MHz<br>100 C iss = C gs + C gd , C ds Shorted<br>Crss = Cgd<br>C oss Coss = Cds + Cgd<br>10<br>Crss<br>1<br>0 100 200 300 400 500<br>VDS, Drain-to-Source Voltage (V)<br> Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage<br>24<br>VDS = 400 V<br>20 VVDSDS = 250 V = 100 V<br>16<br>12<br>8<br>4<br> 0<br>0 3 6 9 12 15 18<br>Qg, Total Gate Charge (nC)<br>, Drain-to-Source<br>DS(on)<br>R<br>On Resistance (Normalized)<br>Capacitance (pF)<br>, Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 4 - Normalized On-Resistance vs. Temperature** **Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** **Fig. 3 - Typical Transfer Characteristics** **Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage** S16-0109-Rev. B, 25-Jan-16 Document Number: 91520 **3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830B** www.vishay.com Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [201 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 TJ = 150 °C<br>T J = 25 °C<br>1<br>V GS = 0 V<br>0.1<br>0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VSD, Source-Drain Voltage (V)<br>, Reverse Drain Current (A)<br>ISD<br>**----- End of picture text -----**<br> **==> picture [191 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>5<br>4<br>3<br>2<br>1<br>0<br>25 50 75 100 125 150<br>TJ, Case Temperature (°C)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 7 - Typical Source-Drain Diode Forward Voltage** **Fig. 9 - Maximum Drain Current vs. Case Temperature** **==> picture [196 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Operation in this area<br>limited by RDS(on)<br>10<br>100 μs<br>1<br>Limited by R DS(on) * 1 ms<br>0.1 10 ms<br>TC = 25 °C<br>T J = 150 °C<br>Single Pulse BVDSS Limited<br>0.01<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [207 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 625<br>600<br>575<br>550<br>525<br>500<br>475<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>TJ, Junction Temperature (°C)<br>, Drain-to-Source<br>DS<br>V Breakdown Voltage (V)<br>**----- End of picture text -----**<br> **Fig. 8 - Maximum Safe Operating Area** **Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature** **==> picture [404 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1 0.05<br>0.02<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>Pulse Time (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case** S16-0109-Rev. B, 25-Jan-16 Document Number: 91520 **4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830B** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com **==> picture [415 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> RD<br>VDS QG<br>VGS 10 V<br>D.U.T.<br>RG +- VDD QGS QGD<br>10 V VG<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br>Charge<br> Fig. 12 - Switching Time Test Circuit<br> Fig. 16 - Basic Gate Charge Waveform<br>Current regulator<br>VDS Same type as D.U.T.<br>90 %<br>50 kΩ<br>12 V 0.2 µF<br>0.3 µF<br>+<br>10 % D.U.T. - VDS<br>VGS<br>td(on) tr td(off) tf VGS<br>3 mA<br> Fig. 13 - Switching Time Waveforms<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br> **Fig. 16 - Basic Gate Charge Waveform** **Fig. 17 - Gate Charge Test Circuit** **==> picture [212 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VDS<br>Vary tp to obtain<br>required IAS<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>10 V<br>tp 0.01 Ω<br>**----- End of picture text -----**<br> **Fig. 14 - Unclamped Inductive Test Circuit** **==> picture [149 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>t<br>p<br>VDD<br>VDS<br>IAS<br>**----- End of picture text -----**<br> **Fig. 15 - Unclamped Inductive Waveforms** S16-0109-Rev. B, 25-Jan-16 Document Number: 91520 **5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF830B** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> **==> picture [171 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Peak Diode Recovery dV/dt Test Circuit<br>**----- End of picture text -----**<br> **==> picture [284 x 463] intentionally omitted <==** **----- Start of picture text -----**<br> + Circuit layout considerations<br>D.U.T.<br>• Low stray inductance<br>• Ground plane<br>• Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg • dV/dt controlled by Rg +<br>•• Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>• D.U.T. - device under test<br>Driver gate drive<br>Period D = P.W.<br>P.W. Period<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br> **Fig. 18 - For N-Channel** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91520._ S16-0109-Rev. B, 25-Jan-16 Document Number: 91520 **6** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** www.vishay.com Vishay Siliconix **TO-220-1** **==> picture [499 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> A MILLIMETERS INCHES<br>E DIM.<br>MIN. MAX. MIN. MAX.<br>F<br>A 4.24 4.65 0.167 0.183<br>Ø P b 0.69 1.02 0.027 0.040<br>b(1) 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.33 15.85 0.564 0.624<br>E 9.96 10.52 0.392 0.414<br>m et | SS<br>e 2.41 2.67 0.095 0.105<br>e(1) 4.88 5.28 0.192 0.208<br>F 1.14 1.40 0.045 0.055<br>H(1) 6.10 6.71 0.240 0.264<br>1 2 3<br>J(1) 2.41 2.92 0.095 0.115<br>L 13.36 14.40 0.526 0.567<br>L(1) 3.33 4.04 0.131 0.159<br>M [*] Ø P 3.53 3.94 0.139 0.155<br>Q 2.54 3.00 0.100 0.118<br>a b(1)<br>ECN: X15-0364-Rev. C, 14-Dec-15<br>DWG: 6031<br>Note<br>• M* = 0.052 inches to 0.064 inches (dimension including<br>protrusion), heatsink hole for HVM<br>C<br>b<br>e<br>7 | t J(1) | =———<br>oT e(1)<br>Package Picture<br>ASE Xi’an<br>———<br>Q<br>H(1)<br>D<br>L(1)<br>L<br>**----- End of picture text -----**<br> Revison: 14-Dec-15 Document Number: 66542 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 08-Feb-17 Document Number: 91000 **1**
Updated at March 15, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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