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IRF7910TRPBF
Dual MOSFET, N Channel, 12 V, 10 A, 0.0115 ohm, SOIC, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 2W
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.0115ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 12V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 10A
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Gate Source Threshold Voltage Max: 2V
- Drain Source Voltage Vds N Channel: 12V
- Drain Source Voltage Vds P Channel: 12V
- Continuous Drain Current Id N Channel: 10A
- Continuous Drain Current Id P Channel: 10A
- Drain Source On State Resistance N Channel: 0.0115ohm
- Drain Source On State Resistance P Channel: 0.0115ohm
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.864 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IRF7910PbF
## HEXFET ® Power MOSFET
## **Applications**
High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications Power Management for Netcom, Computing and Portable Applications Lead-Free
## **Benefits**
Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current
**VDSS RDS(on) max ID 12V** 15mΩ @VGS = 4.5V 10A
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S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
**Symbol Parameter Max. Units** rs er GO VDS Drain-Source Voltage 12 V VGS Gate-to-Source Voltage ± 12 V ~~eees~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 10 ~~Rs~~ ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.9 A ~~ee———————~~ IDM Pulsed Drain Current 79 ~~ae~~ PD @TA = 25°C Maximum Power Dissipation 2.0 W ~~BP Se~~ PD @TA = 70°C Maximum Power Dissipation 1.3 W ~~BP Se~~ Linear Derating Factor 16 mW/°C ~~Sn~~ TJ , TSTG ~~I~~ Junction and Storage Temperature Range -55 to + 150 °C
## **Thermal Resistance**
|**Symbol**<br>~~Wf~~|**Parameter**<br>~~Wf~~<br>~~___________+—___|___|~~|**Typ.**<br>~~___________+—___|___|~~|**Max.**<br>~~___________+—___|___|~~|**Units**<br>~~___________+—___|___|—~~|
|---|---|---|---|---|
|RθJL<br>~~Wf~~|Junction-to-Drain Lead<br>~~Wf~~<br>~~___________+—___|___|~~<br>~~Po~~|–––<br>~~___________+—___|___|~~<br>~~Po~~|42<br>~~___________+—___|___|~~|°C/W<br>~~___________+—___|___| —~~|
|RθJA<br>~~Wf~~|Junction-to-Ambient<br>~~Wf~~<br>~~___________+—___|___|~~|–––<br>~~___________+—___|___|~~|62.5<br>~~___________+—___|___|~~||
Notes through are on page 8
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1
## IRF7910PbF
**Static @ TJ = 25°C (unless otherwise specified)**
|**Symbol**|**Parameter**<br>es|**Parameter**<br>es|**Min.**<br>es<br>ee|**Typ. **<br>es<br>ee|**Max.**<br>es|**Max.**<br>es|**Units**<br>es|**Conditions**<br>es|**Conditions**<br>es|**Conditions**<br>es|
|---|---|---|---|---|---|---|---|---|---|---|
|gfs|Forward Transconductance<br>es||18<br>ee <br>es|–––<br> ee<br>es|–––<br>es||S<br>es|VDS= 6.0V, ID= 8.0A<br>es|||
|Qg|Total Gate Charge<br>~~a~~||––– 17 26 I<br>~~a~~|––– 17 26 I<br>~~a~~|––– 17 26 I<br>~~a~~||––– 17 26 I<br>nC<br>~~a~~<br>~~es~~<br>~~a~~|––– 17 26 ID= 8.0A<br>VDS= 6.0V<br>VGS= 4.5V|||
|Qgs|Gate-to-Source Charge<br>~~es~~||–––<br>~~es~~|4.4<br>~~es~~|–––<br>~~es~~||||||
|Qgd<br>Rs|Gate-to-Drain ("Miller") Charge<br>~~a~~||–––<br>~~a~~|5.2<br>~~a~~|–––<br>~~a~~||||||
|gd<br>Qoss<br>Rs<br>Rs|Output Gate Charge<br>~~a~~||–––<br>~~a~~|16<br>~~a~~|–––<br>~~a~~|||VGS= 0V, VDS= 10V|||
|td(on)<br>Rs<br>Rs<br>ee|Turn-On Delay Time<br>~~a~~||–––<br>~~a~~|9.4<br>~~a~~|–––<br>~~a~~||ns<br>~~a~~<br>ee<br>~~ee~~|VDD= 6.0V<br>ID= 8.0A<br>RG= 1.8Ω<br>VGS= 4.5V|||
|d(on)<br>tr<br>Rs<br>ee<br>es|Rise Time<br>ee||–––<br>ee|22<br>ee|–––<br>ee||||||
|td(off)<br>ee<br>es|Turn-Off Delay Time<br>ee||–––<br>ee|16<br>ee|–––<br>ee||||||
|tf<br>es<br>~~ee~~|Fall Time<br>ee<br>~~ee~~||–––<br>ee<br>~~ee~~|6.3<br>ee<br>~~ee~~|–––<br>ee<br>~~ee~~||||||
|Ciss<br>~~ee~~<br>~~Rs~~|Input Capacitance<br>~~ee~~<br>~~es~~<br>||–––<br>~~ee~~<br>~~es~~<br>|1730<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>||pF<br>~~ee~~<br>~~es~~<br>|VGS= 0V<br>VDS= 6.0V<br>ƒ = 1.0MHz<br>|||
|Coss<br>~~Rs~~|Output Capacitance<br>~~es~~<br>||–––<br>~~es~~<br>|1340<br>~~es~~<br>|–––<br>~~es~~<br>||||||
|Crss<br>~~Rs~~|Reverse Transfer Capacitance<br>~~es~~<br>||–––<br>~~es~~<br>|330<br>~~es~~<br>|–––<br>~~es~~<br>||||||
|**Avalanche Characteristics**<br>|||||||||||
|**Symbol**<br>oe<br>Rs||**Parameter**<br>oe||||**Typ.**<br>oe|||**Max.**<br>oe|**Units**<br>oe|
|EAS<br>oe<br>Rs||Single Pulse Avalanche Energy<br>oe||||–––<br>oe|||100<br>oe|mJ<br>oe|
|IAR<br>oe<br>Rs||Avalanche Current<br>oe||||–––<br>oe|||8.0<br>oe|A<br>oe|
|**Diode Characteristics**<br>oe<br>~~ne~~<br>~~ee~~|||||||||||
|**Symbol**<br>~~ne~~|**Parameter**<br>~~ee~~||**Min.**<br>~~ee~~|**Typ. **|**Max. **||**Units**|**Conditions**|||
|IS<br>~~ne~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~||–––<br>~~ee~~|–––|1.8|||MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G|||
|ISM<br>~~ne~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~||–––<br>~~ee~~|–––|79||||||
|VSD<br>~~|~~|Diode Forward Voltage<br>~~|~~||–––<br>~~|~~|0.85<br>~~|~~|1.3<br>~~|~~||V|TJ= 25°C, IS= 8.0A, VGS= 0V<br>—-|||
||||–––<br>~~|~~<br>Ft|0.70<br>~~|~~<br>Ft|–––<br>~~|~~<br>Ft|||TJ= 125°C, IS= 8.0A, VGS= 0V<br>—-<br>@|||
|trr<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse RecoveryTime<br>~~ee~~<br>~~a~~<br>||–––<br>~~ee~~<br>|50<br>~~ee~~<br>|75<br>~~ee~~<br>||ns<br>~~ee~~<br>|TJ= 25°C, IF= 8.0A, VR=12V<br>di/dt = 100A/µs<br>~~ee~~<br>~~©~~<br>|||
|Qrr<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse RecoveryCharge<br>~~ee~~<br>~~a~~<br>||–––<br>~~ee~~<br>|60<br>~~ee~~<br>|90<br>~~ee~~<br>||nC<br>~~ee~~<br>||||
|trr<br>~~a~~<br>~~a ee~~|Reverse Recovery Time<br>~~a~~<br>~~ee~~||–––<br>~~ee~~|51<br>~~ee~~|77<br>~~ee~~||ns<br>~~ee~~|TJ= 125°C, IF= 8.0A, VR=12V<br>di/dt = 100A/µs<br>~~©~~<br>~~ee~~<br>®|||
|Qrr<br>a|Reverse Recovery Charge||–––|60|90||nC||||
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## IRF7910PbF
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1000 Ves ===ESSS S S EEEEG<br>sev FEFEH<br>100<br>a8<br>3.5V _—<rt |<br>oy2.0V. er1 a<br>10 po rromisy EL}| |<br>1<br>e H<br>1.5V<br>Ff ET<br>0.1<br>20µs PULSE WIDTH<br>0.01 rTee CT CT Tj = 25°C | | | JTttt<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 1.** Typical Output Characteristics
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100 a— Ee———a a a a<br>Eea e es e eyes e ee ©es ee<br>TJ = 150°C<br>10 a V/, aa<br>es ey 2 ee ee ee ee eee<br>Ee TJ = 25°C ee<br>sa ee ee<br>PP<br>VDS = 10V<br>20µs PULSE WIDTH<br>1<br>1.0 2.0 3.0 4.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
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1000 Ves === EEREEG<br>Bay EEE HH<br>100 4sv3.5V2 TAee| + + ++ ++]<br>povrom 27y2.0Vsv gerrars + ee—T TTeee——_ee eeeeTTT<br>10<br>es eeee<br>1.5V<br>1<br>a aeT<br>20µs PULSE WIDTH<br>0.1 Pt TTT Tj = 150°C mannii<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 2.** Typical Output Characteristics
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2.0<br>ID = 10A<br>P eeEEE<br>1.5 P EEEE<br>1.0 EL eeTT |<br>EEE<br>0.5<br>V GS = 4.5V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance Vs. Temperature
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## IRF7910PbF
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10000 — = VCGS iss = C = 0V, f = 1 MHZgs + Cgd, Cds SHORTED 12 ID= 8.0A VDS= 9.6V<br>Crss = Cgd 10 a VDS= 6.0V a<br>Coss = Cds + Cgd<br>8<br>| i<br>Ciss<br>1000 eet TR: Coss TII| 6 P| LA<br>Po =PE UNSSSEEEETSeaEEE 4 Ff/ | |<br>Crss<br>P SH E) 2 A<br>FOR TEST CIRCUIT<br>SEE FIGURE 13<br>0<br>100 r r cnn = Ze<br>0 10 20 30 40<br>1 10 100<br> QG Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100.0 1000<br>OPERATION IN THIS AREA<br>ee 4 A A 7 LIMITED BY R A DS(on)<br>10.0 TJ = 150°CJ = 150°C= 150°C 100<br>. | ff |<br>Eees 2 ee ee ee eee P77] TTT TTT] UH]<br>100µsec<br>es eeee Catt SCI _TII<br>1.0 TJ = 25°CJ = 25°C= 25°C 10<br>ie r Ny 1msec<br>ee ey ee ee eee Tc = 25°C eel<br>10msec<br>VGS = 0VGS = 0V= 0V Tj = 150°C<br>0.1 |—j4—+—"—j4—+—" = 1 Se Single Pulse 1 ll serell<br>0.0 0.5 1.0 1.5 2.0 0 1 10 100<br>VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
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100.0<br>ee 4 A A<br>10.0 TJ = 150°CJ = 150°C= 150°C<br>. | ff<br>‘ Eees 2 eeee ee ee eee<br>1.0 TJ = 25°CJ = 25°C= 25°C<br>ie r<br>ee ey ee ee eee<br>VGS = 0VGS = 0V= 0V<br>0.1 |—j4—+—"—j4—+—" =<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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4
## IRF7910PbF
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10.0<br>PfPDS Et Vps Ro <<br>8.0 PTMELEE<br>Pt ENE= EL V,y DUT.<br>-<br>6.0 PT tT | INE EL Rg<br>PN<br>Bae Ves<br>≤ 1<br>PPP iN mtr ≤ 0.1 %<br>4.0<br>TEEN —<br>Fig 10a. Switching Time Test Circuit<br>2.0<br>VDSDS<br>90%<br>0.0 Ft} | i ft | ft tt | \[[ /<br>25 50 75 100 125 150 |<br>I , Drain Current (A)D<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
VDSDS<br>90%<br>\[[<br>10% /\<br>VGS |\« le >|\TTpl<<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
## **Fig 9.** Maximum Drain Current Vs. Ambient Temperature
**Fig 10b.** Switching Time Waveforms
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100<br>SS ae ee eeel<br>eeeee<br>ee<br>D = 0.50<br>R S ee __ eee<br>0.20 SET eee e ee<br> 10 r mamemmnnsae (eee cal ON |<br>0.10<br>po pA 0.05 eeeereee || oe tTeeTE ee eeeEtee eee<br>e 0.02 e ae ee P DM<br> 1 = ee IIE<br>0.01 t 1<br>S e<br>pTa a a eerw ee ee ee ee ee ee eee t 2<br>} |_| SINGLE PULSE a ee ee Notes:<br>Pd (THERMAL RESPONSE) 0 1. Duty factor D = t / t1 2<br>mail ELUM ELEM 1 2. Peak T J = P DM x Z thJA + T A<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>(Z )thJA<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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## IRF7910PbF
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0.0145 0.020<br>0.0140<br>0.018<br>0.0135<br>0.015<br>0.0130 VGS = 4.5V ID = 8.0A<br>0.013<br>0.0125<br>0.0120 CEE 0.010<br>0 20 40 60 80 100 2.5 3.5 4.5 5.5<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage (V)<br>Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>inf D.U.T. +-VDS VG 250 I D<br>VGS TOP 3.6A<br>3mA Charge 6.4A<br>a® | w y 200 TT BOTTOM 8.0A<br>IG ID<br>Current Sampling Resistors | en PX<br>P NT<br>150 ft<br>Fig 14a&b. Basic Gate Charge Test Circuit<br>and Waveform<br>GENER<br>KERN eee<br>15V 100 PKNO<br>50 POA AL<br>V(BR)DSS<br>tp VDS L DRIVER<br>_ PAS<br>R G D.U.T + 0<br>/ IAS - [V][DD] A 25 Pt 50 75 100 125 150<br>aa 20V S E °<br>I AS tp 0.01Ω Starting T , Junction TemperatureJ ( C)<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>)Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)Ω<br>RDS(on), Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>
**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms
6
**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current
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## IRF7910PbF
## **SO-8 Package Outline** (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
## SO-8 Part Marking Information
**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/**
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7
## IRF7910PbF
## **SO-8 Tape and Reel**
Dimensions are shown in millimeters (inches)
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TERMINAL NUMBER 1<br>ood 0) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>a<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br> 330.00<br>g (12.992) MAX. \/<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
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NOTES:<br>**----- End of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
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**----- Start of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>
**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/**
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 3.2mH RG = 25Ω, IAS = 8.0A.
Pulse width ≤ 300µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t<10 sec
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008
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Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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