IRF7530TRPBF
Dual MOSFET, N Channel, 20 V, 20 V, 5.4 A, 5.4 A, 0.03 ohm
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (23-Jan-2024)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: µSOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.3W
- Power Dissipation P Channel: 1.3W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 5.4A
- Continuous Drain Current Id P Channel: 5.4A
- Drain Source On State Resistance N Channel: 0.03ohm
- Drain Source On State Resistance P Channel: 0.03ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.412 € |
| Current stock | 10+ |
| Lead time | 30 days |
PD - 95243
**==> picture [146 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
HEXFET Power MOSFET<br>**----- End of picture text -----**<br>
Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Lead-Free
## **Description**
New trench HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
**==> picture [206 x 219] intentionally omitted <==**
**----- Start of picture text -----**<br>
S1 1 8 D1<br>G1 mnK(= 2 um 7 D1 VDSS = 20V<br>S2 3 6 D2<br>G2 4 5 D2 R = 0.030Ω<br>Tb DS(on)<br>Top View<br>Micro8™<br>**----- End of picture text -----**<br>
|**Parameter**<br>**Max.**<br>**Units**<br>VDS<br>Drain- Source Voltage<br>20<br>V<br>ID@ TA= 25°C<br>Continuous Drain Current, VGS@ 4.5V<br>5.4<br>ID@ TA= 70°C<br>Continuous Drain Current, VGS@ 4.5V<br>4.3<br>A<br>IDM<br>Pulsed Drain Current<br>40<br>PD@TA= 25°C<br>Power Dissipation<br>1.3<br>PD@TA= 70°C<br>Power Dissipation<br>0.80<br>Linear DeratingFactor<br>10<br>mW/°C<br>EAS<br>Single Pulse Avalanche Energy<br>33<br>mJ<br>VGS<br>Gate-to-Source Voltage<br>± 12<br>V<br>TJ,TSTG<br>Junction and Storage Temperature Range<br>-55 to + 150<br>°C<br>~~Absolute Maximum Ratings~~<br>~~oy~~<br>~~eeGG~~<br>~~===~~<br>es<br>~~ss~~<br>~~pt~~<br>~~ee~~<br>~~eG~~<br>~~ee~~<br>~~2~~<br>~~CO~~|
|---|
|**Thermal Resistance**|
|**Parameter**<br>**Max.**<br>**Units**<br>RθJA<br>Maximum Junction-to-Ambient<br>100<br>°C/W<br>~~ee~~|
|www.irf.com<br>1|
|5/13/04|
|~~Ps~~|**Parameter**<br>~~rs~~|**Min. **<br>~~Gs~~<br>~~es~~|**Typ. **<br>~~re~~<br>~~es~~|**Max.**<br>~~ss~~|**Units**<br>~~ss~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Ps~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~rs~~<br>~~es~~|20<br>~~Gs ~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br> ~~re~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~ss~~<br>~~es~~|V<br>~~es~~<br>~~ss~~|VGS= 0V, ID= 250uA<br>~~es~~|
|∆V(BR)DSS/∆TJ<br>~~se~~|Breakdown Voltage Temp. Coefficient<br>~~se~~<br>||–––<br>~~es~~<br>~~se~~<br>~~es~~<br>||0.01<br>~~es ~~<br>~~se~~<br>~~es~~<br>|–––<br> ~~ss~~<br>~~se~~<br>~~es~~<br>~~SE~~|V/°C<br>~~ss~~<br>~~se~~<br>~~SE~~|Reference to 25°C, ID= 1mA<br>~~se~~<br>~~SE~~<br>~~a~~|
|RDS(on)<br>~~ee~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~ee~~<br>|<br>~~es rs~~|–––<br>~~es~~<br>~~ee~~<br>||––– <br>~~es~~<br>~~ee~~<br>|0.030<br>~~es~~<br>~~ee~~<br>~~SE~~|Ω<br>~~ee~~<br>~~SE~~|VGS= 4.5V, ID= 5.4A<br>~~ee~~<br>~~SE~~<br>~~a~~|
|||–––<br>~~ee~~<br>|~~|~~<br>~~rs~~|––– <br>~~ee~~<br>~~|~~<br>~~rs~~|0.045<br>~~ee~~<br>~~SE~~<br>~~es~~||VGS= 2.5V, ID= 4.6A<br>~~ee~~<br>~~SE~~<br>~~a~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>|<br>~~es rs~~|0.60<br>|<br>~~rs~~|–––<br><br>~~rs~~|1.2<br>~~SE~~<br>~~es~~|V<br>~~SE~~|VDS= VGS, ID= 250µA<br>~~SE~~<br>~~a~~|
|gfs<br>~~a~~<br>~~a~~|Forward Transconductance<br>~~es rs~~<br>~~es~~|13<br>~~rs ~~<br>~~es~~|–––<br> ~~rs ~~<br>~~es~~|–––<br> ~~es~~<br>~~es~~|S<br>~~es~~|VDS= 10V, ID= 5.4A<br>~~es~~|
|IDSS<br>~~a~~<br>~~ooo~~|Drain-to-Source Leakage Current<br>~~a~~<br>~~ooo~~|–––<br>~~a~~|–––<br>~~a~~|1.0<br>~~a~~|~~a~~<br>~~Pe~~<br>~~ooo~~|VDS= 16V, VGS= 0V<br>~~a~~|
|||–––<br>~~a~~<br>~~ooo~~|–––<br>~~a~~<br>~~ooo~~|25<br>~~a~~<br>~~ooo~~||VDS= 16V, VGS= 0V, TJ= 70°C<br>~~a~~<br>~~Pe~~<br>~~ooo~~|
|~~ooo~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~ooo~~<br>~~ee ee~~|–––<br>~~ooo~~<br>~~ee~~|–––<br>~~ooo~~<br>~~ee~~|100<br>~~ooo~~<br>|~~ooo~~<br>~~PO~~|VGS= 12V<br>~~ooo~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~ooo~~<br>~~ee ee~~|–––<br>~~ooo~~<br>~~ee~~|–––<br>~~ooo~~<br>~~ee~~|-100<br>~~ooo~~<br>||VGS= -12V<br>~~ooo~~<br>~~PO~~|
|Qg<br>~~ooo~~<br>~~a~~<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~ooo~~<br>~~ee ee~~<br>~~ee~~<br>~~a~~|–––<br>~~ooo~~<br>~~ee~~<br>~~ee~~|18<br>~~ooo~~<br>~~ee~~<br>~~ee~~|26<br>~~ooo~~<br><br>~~ee~~|nC<br>~~ooo~~<br> ~~PO~~|ID= 5.4A<br>VDS= 16V<br>VGS= 4.5V<br>~~ooo~~<br>~~PO~~<br>~~®~~|
|Qgs<br>~~a~~<br>~~a~~<br>~~ee~~|Gate-to-Source Charge<br>~~ee ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|3.4<br>~~ee~~<br>~~ee~~|5.1<br><br>~~ee~~|||
|Qgd<br>~~a~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>Ena|3.4<br>~~ee~~<br>Ena|5.1<br>~~ee~~|||
|td(on)<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-On Delay Time<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>Ena|8.5<br>~~ee~~<br>Ena|–––<br>~~ee~~||VDD= 10V<br>ID= 1.0A<br>RG= 6.0Ω<br>RD= 10Ω<br>~~®~~<br>@|
|tr<br>~~ee~~|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>Ena<br>~~ee~~|11<br>Ena<br>~~ee~~|–––|||
|td(off)<br>~~ee~~<br>a|Turn-Off Delay Time<br>~~ee~~ <br>|–––<br> Ena<br>|36<br>Ena|–––|||
|tf<br>ee<br>~~ee~~|Fall Time<br>ee|–––<br>ee|16|–––|||
|Ciss<br>~~ee~~<br>ee|Input Capacitance|–––|1310|–––|pF|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz|
|Coss<br>~~ee~~<br>ee|Output Capacitance|–––|180|–––|||
|Crss<br>ee<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|150<br>~~ee~~|–––|||
## **Source-Drain Ratings and Characteristics**
**==> picture [432 x 95] intentionally omitted <==**
**----- Start of picture text -----**<br>
Parameter Min. Typ. Max. Units Conditions<br>es IS rs Continuous Source Current fs Gs MOSFET symbol D<br>1.3<br>(Body Diode) showing the<br>ISM Pulsed Source Current integral reverse G<br>40<br>(Body Diode) p-n junction diode. S<br>VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.3A, VGS = 0V<br>ReGG<br>trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = 1.3A<br>$$———————++++{, ee Qrr Reverse RecoveryCharge es ––– 13 20 nC di/dt = 100A/µs . @ |<br>**----- End of picture text -----**<br>
© Repetitive rating; pulse width limited by C) When mounted on 1 inch square copper board, t<10 sec max. junction temperature. Starting TJ = 25°C, L = 2.6mH eo) Pulse width ≤ 400µs; duty cycle ≤ 2% R ® G = 25Ω, IAS = 5.0A. (See Figure 10)
www.irf.com
2
**==> picture [205 x 473] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>VGS<br>TOP 7.00V<br>5.00V<br>4.50V<br>3.50V Ho<br>3.00V<br>2.70V a ll<br>2.50V<br>BOTTOM 2.25V 1 |<br>Y Zane el<br>ARTI<br>ACCOM | Il<br>2.25V<br>Vi<br>20µs PULSE WIDTH<br>Aal T = 25J °C<br> 10<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br> 100 EEE EE<br>re{|<br>a [ {| f[ | f[ | [ [- ]<br>SS a T = 25 CJ a °<br>See<br>vay T = 150 CJ °<br>AAC<br>Aare)<br>ya<br>V = 15VDS<br> 10 TY) PEE 20µs PULSE WIDTH<br>2.0 2.5 3.0 3.5 4.0 4.5<br>V , Gate-to-Source Voltage (V)GS<br>D<br>I , Drain-to-Source Current (A)<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**==> picture [212 x 472] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>VGS<br>TOP 7.00V<br>5.00V<br>4.50V3.50V HO<br>3.00V a<br>2.70V<br>2.50V<br>BOTTOM 2.25V 1<br>LN Pye |<br>Z T<br>|or<br>2.25V<br>||<br>20µs PULSE WIDTH<br> 10 My“lll)/ T = 150 ri J °C<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>Fig 2. Typical Output Characteristics<br>2.0<br>ID = 5.0A<br>PROWWE<br>LL DUGUGERRNUOUEE<br>1.5<br>PEELE EEE<br>1.0 TEEPEEEA<br>OL Ler<br>Ieeepe: TTT<br>0.5 PLE EEE<br>0.0 SUNEERAAAOGSENE AEOUOTOA E ERRU A EOOEIDRARRES VGS = 4.5V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction TemperatureJ ( C)°<br>D<br>I , Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance Vs. Temperature
www.irf.com
3
**==> picture [438 x 472] intentionally omitted <==**
**----- Start of picture text -----**<br>
2000 10<br>VGS = 0V, f = 1MHz ID =<br>1600 ||||| CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C SHORTEDds 8 PoPE ttttt VVVDSDSDS === 16V 10V 4V aanwaa<br>Ciss<br>1200 a all 6 PLE EET a assy 1<br>e e | iti ttt TA<br>en ll SE RREEeY Ane<br>800 4<br>et SY |<br>400 2<br>Sa ell LT A Et<br>Coss<br>Crss<br>0 eaS| f r eteeLT]l 0 TAF“AtiT E t t Tt t ttli<br> 1 10 100 0 5 10 15 20 25 30<br>V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 100<br>a T = 150 CJ ° TT 10us<br>Wg a {] t i ll<br> 10 10 100us<br>1ms<br>T = 25 CJ °<br> 1 10ms<br> T TAJ = 25 C= 150 C° °<br> 1 e e V = 0 V GS 0.1 Single Pulse CEa ohRal<br>0.5 1.0 1.5 2.0 0.1 1 10 100<br>V ,Source-to-Drain Voltage (V)SD V , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V , Gate-to-Source Voltage (V)<br>I , Drain Current (A) D<br>I , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
www.irf.com
4
**==> picture [434 x 475] intentionally omitted <==**
**----- Start of picture text -----**<br>
5.0 80<br>ID<br>NR TOP 2.2A<br>4.0A<br>4.0 BOTTOM 5.0A<br>PASSES K S<br>60<br>PT TT NEE TXT TT<br>3.0 PT TT EINE ET |<br>40<br>2.0 PEEPN) RAT<br>PT NS wen \<br>20<br>1.0 PT TT ET TE TIN BAND NE<br>TT eT ET EN SSN<br>Pitt tty tty SSK<br>0.0 PPE EE 0 Ff| USS<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T , Case TemperatureC ( C)° Starting T , Junction TemperatureJ ( C)°<br>Fig 9. Maximum Drain Current Vs. Fig 10. Maximum Avalanche Energy<br>Case Temperature Vs. Drain Current<br> 1000<br> 100<br>D = 0.50<br>0.20<br> 10 D 0.10 err Cl<br>0.05<br>PDM<br>0.02<br>ST 0.01 etet t1<br> 1 t2<br>SINGLE PULSE<br>(THERMAL RESPONSE) Notes:<br>1. Duty factor D = t / t1 2<br>PI e i 2. Peak T J = P DM x Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>I , Drain Current (A)D<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
**==> picture [437 x 204] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.04 0.10<br>0.08<br>0.03<br>0.06<br>Id = 5.0A<br>0.02<br>0.04<br>VGS= 2.5V<br>VGS = 4.5V<br>0.01 0.02<br>2.0 3.0 4.0 5.0 6.0 7.0 0 10 20 30 40<br>ID, Drain Current (A)<br>VGS, Gate -to -Source Voltage ( V )<br> )<br>Ω<br>RDS(on) , Drain-to -Source Voltage (<br>)<br>Ω<br>RDS ( on) , Drain-to-Source On Resistance (<br>**----- End of picture text -----**<br>
**Fig 12.** On-Resistance Vs. Gate Voltage
**Fig 13.** On-Resistance Vs. Drain Current
www.irf.com
6
## Micro8 Package Outline
Dimensions are shown in milimeters (inches)
**==> picture [304 x 178] intentionally omitted <==**
**----- Start of picture text -----**<br>
LEAD ASSIGNMENTS INCHES MILLIMETERS<br>D DIM MIN MAX MIN MAX<br>- B - 3 D D D D D1 D1 D2 D2 A .036 .044 0.91 1.11<br>A1 .004 .008 0.10 0.20<br>_ 3 E i=WEEat 8 7 6 5 — H 8 7 6 5 ggg8 SINGLE 8 7 6 5 pgga DUAL EP(|| B .010 .014 0.25 0.36C .005 .007 0.13 0.18D .116 .120 2.95 3.05 |ET[| [| | |<br>- A - 0.25 (.010) M A M 1 2 3 4 1 2 3 4 e .0256 BASIC 0.65 BASIC<br>1 2 3 4 e1 .0128 BASIC 0.33 BASIC<br>S S S G S1 G1 S2 G2 E .116 .120 2.95 3.05<br>: Et H .188 .198 4.78 5.03<br>e L .016 .026 0.41 0.66<br>6X oe θ 0° 6° 0° 6°<br>e 1<br>θ RECOMMENDED FOOTPRINT<br>A 1.04 0.38<br>- C - re 0.10 (.004) / ( .041 ) 8X —— ( .015 ) [8X]<br>B 8X A 1 L C<br>ie 4 8X 8X Les<br>0.08 (.003) M C A S B S 3.20 4.24 5.28<br>( .126 ) ( .167 ) ( .208 )<br>NOTES:<br> 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.<br> 2 CONTROLLING DIMENSION : INCH. Jae 0.65<br> 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. - ( .0256 ) [6X]<br>**----- End of picture text -----**<br>
## Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
**==> picture [272 x 55] intentionally omitted <==**
**----- Start of picture text -----**<br>
LOT CODE (XX) DATE CODE (YW) - See table below<br>Y = YEAR<br>XXYWP W = WEEK<br>P = DESIGNATES LEAD - FREE<br>7501<br>PRODUCT (OPTIONAL)<br>PART NUMBER<br>**----- End of picture text -----**<br>
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WW = (27-52) IF PRECEDED BY A LETTER
|||WORK|WORK|||
|---|---|---|---|---|---|
|YEAR|Y|WEEK||W||
|2003<br>2002<br>2001<br>2004|3<br>2<br>1<br>4|03<br>02<br>01<br>04||C<br>B<br>A<br>D||
|2005|5|||||
|2006|6|||||
|2007|7|||||
|2008|8|||||
|2009<br>2010|9<br>0|26<br>24<br>25||Z<br>X<br>Y||
|||WORK|WORK|||
|---|---|---|---|---|---|
|YEAR|Y|WEEK||W||
|2001|A|27||A||
|2002|B|28||B||
|2003|C|29||C||
|2004|D|30||D||
|2005|E|||||
|2006|F|||||
|2007|G|||||
|2008|H|||||
|2009|J|||||
|2010|K|50||X||
|||51||Y||
|||52||Z||
www.irf.com
7
## Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
**==> picture [211 x 340] intentionally omitted <==**
**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>Ooo oo<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 ) Lo FEED DIRECTION<br>7.9 ( .312 )<br> 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/04
www.irf.com
8
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →