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IRF7507TRPBF
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 2.4 A, 2.4 A, 0.085 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (23-Jan-2024)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: MSOP
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.25W
- Power Dissipation P Channel: 1.25W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 2.4A
- Continuous Drain Current Id P Channel: 2.4A
- Drain Source On State Resistance N Channel: 0.085ohm
- Drain Source On State Resistance P Channel: 0.085ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.321 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD - 95218
## IRF7507PbF
## HEXFET ® Power MOSFET
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|---|---|---|---|---|---|---|---|---|---|
|Generation V Technology|N-CHANNEL MOSFET|
|Ultra Low On-Resistance|S1|1|8|D1|N-Ch|P-Ch|
|Dual N and P Channel MOSFET|2|7|
|G1|D1|
|Very Small SOIC PackageLow Profile (<1.1mm)|S2|a|3|(opt|6|D2|VDSS|20V|-20V|
|Available in Tape & Reel|G2|a|4|LO|5|D2|
|Fast Switching|P-CHANNEL MOSFET|RDS(on) 0.135Ω|0.27Ω|
|Lead-Free|Top View|
|Fifth Generation HEXFETs from International Rectifier utilize advanced|
|processing techniques to achieve extremely low on-resistance per silicon area.|
|This benefit, combined with the fast switching speed and ruggedized device|
|design that HEXFET Power MOSFETs are well known for, provides the|
|designer with an extremely efficient and reliable device for use in a wide variety|
|The new Micro8 package, with half the footprint area of the standard SO-8,|
|Micro8|
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## **Description**
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
## **Absolute Maximum Ratings**
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|---|---|---|---|---|
|Parameter|Max.|Units|
|N-Channel P-Channel|tSOTyt|
|a|VDS|Drain-Source Voltage 20 -20 V|
|a|ID @ TA = 25°C|Continuous Drain Current, VGS 2.4 -1.7|
|ID @ TA = 70°C|Continuous Drain Current, VGS 1.9 -1.4|A|
|ee|IDM|a|Pulsed Drain Current|19 -14|
|ee|PD @TA = 25°C|Maximum Power Dissipation|1.25|W|
|ih|PD @TA = 70°C|Maximum Power Dissipation|0.8|W|
|Linear Deratin|a|g Factor 10 mW/°C|
|TT|VGS Gate-to-Source Voltage|± 12 V|
|a|VGSM Gate-to-Source Voltage Single Pulse tp<10µS 16 V|
|a|dv/dt|Peak Diode Recovery dv/dt|5.0 -5.0|V/ns|
|TJ , TSTG|Junction and Storage Temperature Range|-55 to + 150|°C|
|Soldering Temperature, for 10 seconds 240 (1.6mm from case)|sh|
|Thermal Resistance|
|Parameter|Max.|Units|
|———a|RθJA|Maximum Junction-to-Ambient|100 °C/W|
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1
## IRF7507PbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||Parameter||Min.|Typ.|Max. Units|Max. Units|Conditions|
|---|---|---|---|---|---|---|---|
|i||N-Ch|20|—|—||VGS= 0V, ID= 250µA|
|||P-Ch|-20|—|—||VGS= 0V, ID= -250µA|
|∆<br>∆<br>Rpscon)|ncn}|N-Ch|—|0.041|—||Reference to 25°C, ID= 1mA<br>Reference to 25°C, ID= -1mA|
|||P-Ch<br>ncn}|—<br>ncn}|-0.012|-0.012<br>—|||
|Rpscon)<br>vom)<br>ae|ncn}<br>StaticDrain-to-SourceOn-Resistance<br>ae|ncn}|—<br>ncn}<br>|ff|0.085 <br>ff|0.14<br>ff||Ω<br>|<br>pch__||VGS= 4.5V, ID= 1.7A|
||||—<br>ncn}<br>|ff|0.120 <br>ff<br>||0.20<br>ff|<br>|||VGS= 2.7V, ID= 0.85A|
|||ncn}<br>pch__||—<br>ncn}<br>| ff<br>pch__||0.17 <br>ff<br>pch__|<br>||0.27<br>ff |<br>pch__|<br>|||VGS= -4.5V, ID=-1.2A|
||||—<br>pch__||0.28 <br>pch__|<br>||0.40<br>pch__|<br>|||VGS= -2.7V, ID=-0.6A|
|vom)<br>ae<br>ss<br>ee|ae<br>°<br>ee|N-Ch<br>a|0.7<br>a|—<br>a|—<br>a|a<br>ee|VDS= VGS, ID= 250µA|
|||P-Ch <br>a<br>ee|-0.7<br>a<br>ee|—<br>a<br>ee|—<br>a<br>ee||VDS= VGS, ID= -250µA|
|vom)<br>ae<br>ee|ae<br>ee|N-Ch<br>ee|2.6<br>ee|—<br>ee|—<br>ee||VDS= 10V, ID= 0.85A|
|||P-Ch<br>ee|1.3<br>ee|—<br>ee|—<br>ee||VDS= -10V, ID= -0.6A|
|||N-Ch|—|—|1.0||VDS= 16 V, VGS= 0V<br>VDS= -16V, VGS= 0V<br>VDS= 16 V, VGS= 0V, TJ= 125°C<br>VDS= -16V, VGS= 0V, TJ= 125°C|
|||P-Ch<br>on|—<br>on|—<br>on|-1.0|||
|||N-Ch<br>on|—<br>on|—<br>on|25|||
|||P-Ch<br>on|—<br>on|—<br>on|-25|||
|IGSS|Gate-to-Source Forward Leakage<br>Po|N-P<br>on<br>Po|––<br>on<br>Po|—<br>on<br>Po|±100<br>Po|Po|VGS= ± 12V<br>Po|
|Q<br>a|Po<br>Total Gate Charge<br>i|N-Ch<br>Po<br>i|––<br>Po<br>i|5.3<br>Po<br>i|8.0<br>Po<br>i|Po<br>i|N-Channel<br>ID= 1.7A, VDS= 16V, VGS= 4.5V<br>P-Channel<br>ID= -1.2A, VDS= -16V, VGS= -4.5V<br>Po<br>e|
|||P-Ch<br>i|—<br>i|5.4<br>i|8.2<br>i|||
|a <br>Q<br>wm<br>as|i<br>Gate-to-Source<br>Charge<br>__[Gatotosoucecrewe<br>Galedorain¢ilerCharge|N-Ch<br>i<br>__[Gatotosoucecrewe|––<br>i<br>__[Gatotosoucecrewe|0.84<br>i<br>__[Gatotosoucecrewe|1.3<br>i<br>__[Gatotosoucecrewe|||
|||P-Ch<br>__[Gatotosoucecrewe|—<br>__[Gatotosoucecrewe|0.96<br>__[Gatotosoucecrewe|1.4<br>__[Gatotosoucecrewe|||
|wm<br>Q<br>as<br>ete|__[Gatotosoucecrewe<br>Gate-to-Drain<br>("Miller") Charge<br>Galedorain¢ilerCharge<br>||N-Ch<br>__[Gatotosoucecrewe|––<br>__[Gatotosoucecrewe|2.2<br>__[Gatotosoucecrewe|3.3<br>__[Gatotosoucecrewe|||
|||P-Ch<br>||—|2.4|3.6|||
|as<br>t<br>sey<br>ete|Galedorain¢ilerCharge<br>Turn-On Delay<br>Time<br>TamondemyTing<br>||N-Ch<br>TamondemyTing<br>||—<br>TamondemyTing|5.7<br>TamondemyTing|—<br>TamondemyTing|TamondemyTing<br>ee<br>ee|N-Channel<br>VDD= 10V, ID= 1.7A, RG= 6.0Ω,<br>RD= 5.7Ω<br>P-Channel<br>VDD= -10V, ID= -1.2A, RG= 6.0Ω<br>RD= 8.3Ω<br>°|
|||P-Ch<br>TamondemyTing<br>||—<br>TamondemyTing|9.1<br>TamondemyTing|—<br>TamondemyTing|||
|sey<br>ete<br>:|TamondemyTing<br>|<br>||N-Ch<br>TamondemyTing<br>||—<br>TamondemyTing|24<br>TamondemyTing|—<br>TamondemyTing|||
|||P-Ch<br>|<br>|||—<br>|<br>||35<br>||—<br>||||
|:an|||N-Ch<br>||<br>ee|—<br>|<br>|<br>ee|15<br>|<br>ee<br>ee|—<br>|<br>ee<br>ee|||
|||P-Ch<br>| |<br>ee|—<br>|<br>|<br>ee|38<br>|<br>ee<br>ee|—<br>|<br>ee<br>ee|||
|an<br>a|||N-Ch<br>ee|—<br>ee|16<br>ee<br>ee|—<br>ee<br> ee|||
|||P-Ch<br>|<br>||—<br>|<br>||43|—|||
||||N-Ch<br>|<br>||—<br>|<br>||260|—|pF<br>~~se~~|N-Channel<br>VGS= 0V, VDS= 15V, ƒ = 1.0MHz<br>P-Channel<br>VGS= 0V, VDS= -15V, ƒ = 1.0MHz|
|||P-Ch<br>|<br>||—<br>|<br>||240|—|||
|a||N-Ch|—|130|—|||
|||P-Ch|—|130|—|||
|Go|Row~~se~~|N-Ch<br>~~se~~|—<br>~~se~~|61<br>~~se~~|—<br>~~se~~|||
|||P-Ch<br>~~se~~|—<br>~~se~~|64<br>~~se~~|—<br>~~se~~|||
Parameter Min. Typ. Max. Units Conditions N-Ch — — 1.25 teanecrenenonan P-Ch — — -1.25 ie [een N-Ch — — 19 P-Ch — — -14 ‘oe —}-+-4 N-Ch — — 4 1.2 TJ = 25°C, IS = 1.7A, VGS = 0V P-Ch — — -1.2 TJ = 25°C, IS = -1.2A, VGS = 0V Vio neeGna ny) N-Ch — 39 59 N-Channel P-Ch — 52 78 TJ = 25°C, IF = 1.7A, di/dt = 100A/µs fe BoieFovsvape N-Ch | — 37 56 P-Channel 2 Qu RowseReverseRacyRecovery Charge P-Ch rtfed — 63 95 n TJ = 25°C, IF = -1.2A, di/dt = -100A/µs ) **Notes:** a) Repetitive rating; pulse width limited by ©) Pulse width ≤ 300µs; duty cycle ≤ 2% , max. junction temperature. ( See fig. 21 ) ® N-Channel ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ® Surface mounted on FR-4 board, t ≤ 10sec. P-Channel ISD ≤ - 1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Ty ≤ 150°C
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## IRF7507PbF
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100<br> TOP 7.5V 5.0V vesSS rHeeeet<br> 4.0V 3.5V 3.0V aCootee ee<br> 2.5V<br>10 2.0V BOTTOM 1.5V ge<br>|gee<br>eae<br>1 ee<br>ena ee ee ee<br>0.1 etl<br>1.5V<br>0.01 ll T = 25°CJ<br>0.1 p en 1 10<br>V , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br>100 PSE<br>es ee ee ee<br>Pot ft | tT ft tT ft ty<br>10 P| TT | |] ——|Lee<br>a<br>a<br>T = 150°CJ<br>Pe a<br>| I<br>wit | tT tT ht<br>1 = T = 25°CJ<br>/ 20 00800<br>SSZa A SS A = SS<br>oe ee<br> V = 10VDS<br>0.1 FTTITYT aoscos pursese worworl<br>1.5 2.0 2.5 3.0 3.5 4.0<br>V , Gate-to-Source Voltage (V)GS<br>I , Drain-to-Source Current (A)D<br>I , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>
## **Fig 1.** Typical Output Characteristics
## **Fig 3.** Typical Transfer Characteristics
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2.0<br>P nl =1.7A EPE<br>1.5 PEPE CEE EE beracl eo<br>1.0<br>tt eT er<br>0.5 PE<br>en<br>0.0 PE dad<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 5.** Normalized On-Resistance Vs. Temperature
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100<br> TOP 7.5V 5.0V vesSSSrHeet<br> 4.0V 3.5V 3.0V rrCootee<br> 2.5V<br>10 2.0V BOTTOM 1.5V gee<br>ee <a ee eee<br>> sill enna<br>1 EE<br>aeee eee e 1.5V na nnnne<br>0.1 =<br>0.01 PT T = 150°CJ<br>0.1 Po 1 Preto 10<br>V , Drain-to-Source Voltage (V)DS<br>I , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>
## **Fig 2.** Typical Output Characteristics
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100 cn<br>ee<br>rt; tt tte tT ee yy yt et<br>10 Piteett | | Le—T|<br>eee ee eee eee ee<br>a T = 150°CJ<br>A<br>1 fn74/4g0GnnnnnL AY| T = 25°CJ | {|i {tt i |<br>==a A ========2 ee ee eee ==eee<br>oy oe oe<br>0.1 AnPETA se| Ly TE e Pow<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>V , Source-to-Drain Voltage (V)SD<br>I , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>
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Fig 4. Typical Source-Drain Diode<br>Forward Voltage<br>0.8<br>8<br>e fo | ft | ft iy<br>QD<br>a8 0.6 ee<br>s5 |. [ff] fe<br>0.4<br>i?)eeoO eeee<br>es 0.2 ee ee<br>eoRe— {[tL [p] _ |v e trm)|<br>0.0 a ae<br>0 ee 2 ee 4 6 [A]<br>I , Drain Current (A)D<br>**----- End of picture text -----**<br>
**Fig 6.** Typical On-Resistance Vs. Drain Current
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## IRF7507PbF
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0.13<br>0.11 \<br>0.09 NEL<br>0.070.05 PiSaeco |) TP<br>2 3 4 5 6 7 8<br>V , Gate-to-Source Voltage (V)GS<br>(Ω<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 7.** Typical On-Resistance Vs. Gate Voltage
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500<br>V = 0V, f = 1MHzGS<br>C = C + C , C SHORTEDiss gs gd ds<br>C = Crss gd<br>400 al C = C + Coss ds gd<br>s<br>Lc! TTT 1 TM<br>300<br>NESE ss Co<br>UT<br>200 PNG al<br>s<br>100 SUR<br>mh<br>0 Cee Ce<br>1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 9.** Typical Capacitance Vs. Drain-to-Source Voltage
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N - Channel<br>**----- End of picture text -----**<br>
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100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>eae 10us a :<br> 10<br>100us<br>1ms<br> 1<br>Sat t t<br>10ms<br> T TCJ = 25 C= 150 C° °<br>0.1 S Single Pulse PAF S: Cl<br> 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>I , Drain Current (A) D<br>**----- End of picture text -----**<br>
**Fig 8.** Maximum Safe Operating Area
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10<br> I = 1.7AD<br> V = 16V DS<br>8 P| ft | PEE tt tb ELL<br>6<br>PP TA<br>a4<br>4 PP EAL<br>2 HY<br> SEE FIGURE 9<br>0 J [restora<br>0 2 4 6 8 10<br>Q , Total Gate Charge (nC)G<br>GS<br>-V , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 10.** Typical Gate Charge Vs. Gate-to-Source Voltage
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## IRF7507PbF
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100 SS aa<br> TOP - 7.5V<br> - 5.0V - 4.0V eee<br> - 3.5V - 3.0V FE<br> - 2.5V<br>10 - 2.0V BOTTOM - 1.5V Att oll<br>1<br>0.1<br>-1.5V<br>0.01 pTTT e TP T = 25°CJ ekerPusey worl<br>0.1 1 10<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
## **Fig 11.** Typical Output Characteristics
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10<br>P T T = 25°CJ ert<br>T = 150°CJ<br>cauae> Ame naee<br>1 aaaPi{WMAL Lit td[| | ty<br>=<br>0.1 HAJAGR RRR<br>rtf | ty V = -10VDS<br>0.01 PLLEL | | cous puuse wiores<br>1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>-V , Gate-to-Source Voltage (V)GS<br>Fig 13. Typical Transfer Characteristics<br>2.0 PE LLET<br>1.5<br>eT eT<br>Le [at]<br>1.0<br>eT<br>0.5<br>MELEE<br>TE<br>0.0 EE a<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction Temperature (°C)J<br>D<br>-I , Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 13.** Typical Transfer Characteristics
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Fig 15. Normalized On-Resistance<br>Vs. Temperature<br>**----- End of picture text -----**<br>
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100 TOP - 7.5V Veep]<br> - 5.0V - 4.0V a cancad Eanes<br> - 3.5V - 3.0V Soeeee<br> - 2.5V<br>10 - 2.0V BOTTOM - 1.5V Att on<br>1<br>0.1 -1.5V<br> 20µs PULSE WIDTH<br>0.01 anail aa T = 150°CJ<br>0.1 1 10<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
## **Fig 12.** Typical Output Characteristics
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10 ne<br>==<br>T = 150°CJ<br>1 fs I if lf | | |<br>T = 25°CJ<br>=<br>0.1 +--+ff | Ft | ||——|| |<br>yp i tf | fe TT<br>0.01 AAR E ee<br>0.4 0.6 0.8 1.0 1.2<br>-V , Source-to-Drain Voltage (V)SD<br>SD<br>-I , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
## **Fig 14.** Typical Source-Drain Diode Forward Voltage
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1.0 Ft ft | TT TT<br>0.80.6 PETri {| | E{| | Fly|<br>VGS = -2.5V<br>0.4 a age 7ee<br>VGS = -5.0V<br>0.2 pa ar<br>e e<br>0.0 i<br>0.0 0.5 1.0 1.5 2.0<br>-I , Drain Current (A)D<br>DS (on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 16.** Typical On-Resistance Vs. Drain Current
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5
## IRF7507PbF
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100<br>OPERATION IN THIS AREA LIMITED<br> TP = BY RDS(on)<br> 10<br>100us<br>ID = -1.7A<br>\ 1 pTR oe 1ms anil<br>10ms<br> T TCJ = 25 C= 150 C° °<br>0.1 SG Single Pulse PEieeCie<br>4 5 6 7 8 1 10 100<br>-V , Gate-to-Source Voltage (V)GS -V , Drain-to-Source Voltage (V)DS<br> Typical On-Resistance Vs. Gate Fig 18. Maximum Safe Operating Area<br>Voltage<br>10<br>V = 0V, f = 1MHzGSGS I = -1.2AD<br>C = C + C , C SHORTEDiss gs gd dsiss gs gd ds V = -16V DS<br>C = Crss gdrss gd<br>C = C + Coss ds gdoss ds gd 8<br>6<br>a ee At<br>SCSTST TtPEt EEA<br>4<br>ol PEE EA<br>2 TTY oT<br>Ft<br> SEE FIGURE 19<br>A 0 Vo ores<br>10 100 0 2 4 6 8 10<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br> Typical Capacitance Vs. Fig 20. Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>N-P - Channel<br> 1000<br> 100 RA<br>D = 0.50<br>0.20<br>SSoagg edi om GES ss ne —— orl<br> 10 0.10<br>0.05<br>PDM<br>0.02<br>e 0.01 er ee th t1<br> 1 e SINGLE PULSE e t2<br>PE (THERMAL RESPONSE) ee tH tt 1. Duty factor D =Notes: t / t1 2<br>0.1 a i i 2. Peak T J = P DM x Z thJA + TA<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>I , Drain Current (A) D-<br>GS<br>-V , Gate-to-Source Voltage (V)<br>(Z )thJA<br>Thermal Response<br>**----- End of picture text -----**<br>
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0.300 PIR TP<br>0.250<br>ID = -1.7A<br>0.200<br>NT<br>\<br>0.150<br>0.100 SaeeeeeeeeeePt<br>2 3 4 5 6 7 8<br>-V , Gate-to-Source Voltage (V)GS<br>DS (on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
## **Fig 17.** Typical On-Resistance Vs. Gate Voltage
## **Fig 18.** Maximum Safe Operating Area
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**----- Start of picture text -----**<br>
500<br>V = 0V, f = 1MHzGSGS<br>C = C + C , C SHORTEDiss gs gd dsiss gs gd ds<br>C = Crss gdrss gd<br>400 PH C = C + Coss ds gdoss ds gd<br>s<br>300<br>Re ss a ee<br>PeSCSTST<br>200<br>PONIES ol<br>s<br>100 See<br>RECHT<br>0 FLIP<br>1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 20.** Typical Gate Charge Vs. Gate-to-Source Voltage
**Fig 19.** Typical Capacitance Vs. Drain-to-Source Voltage
**Fig 21.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
6
## IRF7507PbF
## Micro8 Package Outline
Dimensions are shown in milimeters (inches)
**==> picture [305 x 178] intentionally omitted <==**
**----- Start of picture text -----**<br>
LEAD ASSIGNMENTS INCHES MILLIMETERS<br>D DIM MIN MAX MIN MAX<br>- B - 3 D D D D —— D1 D1 D2 D2 | A .036 .044 0.91 1.11 EF =E<br>A1 .004 .008 0.10 0.20<br>pL 3 E =:HHHHE 8 7 6 5 H 8 7 6 5 HEHEHE SINGLE 8 7 6 5 HHRA DUAL [|i B .010 .014 0.25 0.36C .005 .007 0.13 0.18D .116 .120 2.95 3.05 [| fT ft<br>- A - 0.25 (.010) M A M 1 2 3 4 1 2 3 4 e .0256 BASIC 0.65 BASIC<br>L_] 1 2 3 4 Daag! Bane —— e1 .0128 BASIC 0.33 BASIC es<br>S S S G S1 G1 S2 G2 E .116 .120 2.95 3.05<br>H .188 .198 4.78 5.03<br>te e L .016 .026 0.41 0.66 es<br>6X ———= θ 0° 6° 0° 6°<br>e 1<br>θ RECOMMENDED FOOTPRINT<br>A 1.04 0.38<br>- C - CHL 0.10 (.004) — wl ( .041 ) 8X ( .015 ) [8X]<br>B 8X A 1 L C<br>a eee 8X 8X | LR<br>0.08 (.003) M C A S B S 3.20 4.24 5.28<br>( .126 ) ( .167 ) ( .208 )<br>NOTES:<br> 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.<br> 2 CONTROLLING DIMENSION : INCH. Jk 0.65<br> 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 5 ( .0256 ) [6X]<br>**----- End of picture text -----**<br>
## Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
**==> picture [51 x 55] intentionally omitted <==**
**----- Start of picture text -----**<br>
LOT CODE (XX)<br>PART NUMBER<br>**----- End of picture text -----**<br>
DATE CODE (YW) - See table below Y = YEAR W = WEEK P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL)
|WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|---|---|---|---|---|---|---|
||||WORK||||
||YEAR|Y|WEEK||W||
||2003<br>2002<br>2001<br>2004|3<br>2<br>1<br>4|03<br>02<br>01<br>04||C<br>B<br>A<br>D||
||2005|5|||||
||2006|6|||||
||2007|7|||||
||2008|8|||||
||2009<br>2010|9<br>0|26<br>24<br>25||Z<br>X<br>Y||
WW = (27-52) IF PRECEDED BY A LETTER
|||WORK|WORK|||
|---|---|---|---|---|---|
|YEAR|Y|WEEK||W||
|2001|A|27||A||
|2002|B|28||B||
|2003|C|29||C||
|2004|D|30||D||
|2005|E|||||
|2006|F|||||
|2007|G|||||
|2008|H|||||
|2009|J|||||
|2010|K|50||X||
|||51||Y||
|||52||Z||
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7
## IRF7507PbF
## Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
**==> picture [210 x 339] intentionally omitted <==**
**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>Ooo oOo ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 ) Lo FEED DIRECTION<br>7.9 ( .312 )<br> 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/04
www.irf.com
8
Updated at June 9, 2026
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