IRF7504TRPBF
Dual MOSFET, P Channel, 20 V, 1.7 A, 0.27 ohm, µSOIC, Surface Mount
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: P Channel
- Power Dissipation Pd: 1.25W
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.27ohm
- Transistor Case Style: µSOIC
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 1.7A
- Power Dissipation N Channel: 1.25W
- Power Dissipation P Channel: 1.25W
- Gate Source Threshold Voltage Max: 700mV
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.7A
- Continuous Drain Current Id P Channel: 1.7A
- Drain Source On State Resistance N Channel: 0.27ohm
- Drain Source On State Resistance P Channel: 0.27ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.124 € |
| Current stock | 10+ |
| Lead time | 30 days |
## IRF7504PbF
## www.irf.com
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## Micro8 Package Outline
Dimensions are shown in milimeters (inches)
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LEAD ASSIGNMENTS INCHES MILLIMETERS<br>D DIM MIN MAX MIN MAX<br>- B - 3 D D D D D1 D1 D2 D2 A .036 .044 0.91 1.11<br>A1 .004 .008 0.10 0.20<br>ae 8 7 6 5 8 7 6 5 P/E B .010 .014 0.25 0.36<br>of 3 E at— 8 7 6 5 H qpAp SINGLE Beae DUAL eee C .005 .007 0.13 0.18D .116 .120 2.95 3.05<br>- A - | 0.25 (.010) M A M _ _ 1 2 3 4 1 2 3 4 {|_| e .0256 BASIC 0.65 BASIC [+]<br>1 2 3 4<br>e1 .0128 BASIC 0.33 BASIC<br>y Le ___f HEEB HOOO ee ee<br>S S S G S1 G1 S2 G2 E .116 .120 2.95 3.05<br>Te] =——— H .188 .198 4.78 5.03<br>e L .016 .026 0.41 0.66<br>Ht 6X ——— θ 0° 6° 0° 6°<br>e 1<br>θ RECOMMENDED FOOTPRINT<br>A 1.04 0.38<br>- C - meeeCoin 0.10 (.004) a| ( .041 ) 8X ( .015 ) [8X]<br>B 8X A 1 L C<br>a 8X 8X i a<br>0.08 (.003) M C A S B S 3.20 4.24 5.28<br>( .126 ) ( .167 ) ( .208 )<br>NOTES:<br> 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.<br> 2 CONTROLLING DIMENSION : INCH. ak 0.65<br> 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. ( .0256 ) [6X]<br>**----- End of picture text -----**<br>
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## Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
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LOT CODE (XX) DATE CODE (YW) - See table below<br>Y = YEAR<br>W = WEEK<br>P = DESIGNATES LEAD - FREE<br>7501<br>PRODUCT (OPTIONAL)<br>PART NUMBER<br>**----- End of picture text -----**<br>
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WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR<br>WORK<br>YEAR Y WEEK W<br>2001 1 01 A<br>2002 2 02 B<br>2003 3 03 C<br>2004 4 04 D<br>2005 5<br>2006 6<br>2007 7<br>2008 8<br>2009 9<br>2010 0 24 X<br>25 Y<br>26 Z<br>**----- End of picture text -----**<br>
WW = (27-52) IF PRECEDED BY A LETTER
|||WORK|WORK|||
|---|---|---|---|---|---|
|YEAR|Y|WEEK||W||
|2002<br>2001<br>2003|B<br>A<br>C|28<br>27<br>29||B<br>A<br>C||
|2004|D|30||D||
|2005|E|||||
|2006|F|||||
|2007|G|||||
|2010<br>2008<br>2009|K<br>H<br>J|50||X||
|||51||Y||
|||52||Z||
www.irf.com
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## Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
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TERMINAL NUMBER 1<br>oo o @<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 ) tL FEED DIRECTION<br>7.9 ( .312 )<br>**----- End of picture text -----**<br>
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1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
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330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/05
www.irf.com
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Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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