IRF740BPBF

**IRF740B** 

www.vishay.com 

Vishay Siliconix 

## **D Series Power MOSFET** 

## **FEATURES** 

|||||||||||**FEATURES**||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**PRODUCT SUMMARY**||||||||||**FEATURES**<br>• Optimal design||
|VDS(V) at TJmax.||||450||||||- Low area specific on-resistance||
|RDS(on)max. () at 25 °C|) at 25 °C|VGS= 10 V|= 10 V|= 10 V|||||0.6|- Low input capacitance (Ciss)|Available|
|Qgmax. (nC)||||30||||||- Reduced capacitive switching losses||
|Qgs(nC)||||4||||||- High body diode ruggedness||
|Qgd(nC)||||7||||||- Avalanche energy rated (UIS)||
|Configuration||||Single||||||• Optimal efficiency and operation||
||||||||D|||- Low cost||
|- Simple gate drive circuitry<br>- Low figure-of-merit (FOM): Ronx Qg<br>- Fast switching<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**Note**<br>* This    datasheet    provides    information    about    parts    that    are<br>RoHS-compliant and / or parts that are non-RoHS-compliant.  For<br>example, parts with lead (Pb) terminations are not RoHS-compliant.<br>G<br>S<br>**TO-220AB**<br>G<br>D<br>S<br>~~ee~~||||||||||||
|||||N-Channel MOSFET||||||Please see the information / tables in this datasheet for details.||



## **APPLICATIONS** 

- Consumer electronics 

   - Displays (LCD or plasma TV) 

- Server and telecom power supplies - SMPS 

- Industrial 

   - Welding 

   - Induction heating 

   - Motor drives 

- Battery chargers 

## **ORDERING INFORMATION** 

Package TO-220AB Lead (Pb)-free IRF740BPbF ~~|~~ **ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) ~~ee~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-Source Voltage VDS 400 Gate-Source Voltage ± 30 V VGS ~~—————a~~ Gate-Source Voltage AC (f > 1 Hz) ~~——~~ 30 TC = 25 °C 10 Continuous Drain Current (TJ = 150 °C) VGS at 10 V ID TC = 100 °C 6 A ~~eore~~ Pulsed Drain Current[ a] ~~ee ee~~ IDM 23 ~~ee a~~ Linear Derating Factor 1.2 W/°C ~~a~~ Single Pulse Avalanche Energy[b] EAS 194 mJ ~~a~~ Maximum Power Dissipation PD 147 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C ~~Se~~ Drain-Source Voltage Slope TJ = 125 °C dV/dt 24 V/ns Reverse Diode dV/dt[d] 0.6 ~~a ee~~ Soldering Recommendations (Peak temperature)[c] for 10 s 300 °C **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature. 

b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25  , IAS = 13 A. 

- c. 1.6 mm from case. 

d. ISD  ID, starting TJ = 25 °C. 

S16-0799-Rev. B, 02-May-16 

**1** 

Document Number: 91519 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF740B** 

www.vishay.com 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum Junction-to-Ambient|RthJA|-|62|°C/W|
|Maximum Junction-to-Case (Drain)|RthJC|-|0.85||



|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||400|-|-|V|
|VDSTemperature Coefficient|VDS/TJ|Reference to 25 °C, ID= 250 μA||-|0.53|-|V/°C|
|Gate-Source Threshold Voltage (N)|VGS(th)|VDS= VGS, ID= 250 μA||3|-|5|V|
|Gate-Source Leakage|IGSS|VGS= ± 30 V||-|-|± 100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= 400 V, VGS= 0 V||-|-|1|μA|
|||VDS= 320 V, VGS= 0 V, TJ= 125 °C||-|-|10||
|Drain-Source On-State Resistance|RDS(on)|VGS= 10 V|ID= 5 A|-|0.5|0.6||
|Forward Transconductance|gfs|VDS= 50 V, ID= 5 A||-|2.7|-|S|
|**Dynamic**||||||||
|Input Capacitance|Ciss|VGS= 0 V,<br>VDS= 100 V,<br>f = 1 MHz||-|526|-|pF|
|Output Capacitance|Coss|||-|59|-||
|Reverse Transfer Capacitance|Crss|||-|9|-||
|Effective Output Capacitance, Energy<br>Relateda|Co(er)|VGS= 0 V,<br>VDS= 0 V to 320 V||-|66|-||
|Effective Output Capacitance, Time<br>Relatedb|Co(tr)|||-|84|-||
|Total Gate Charge|Qg|VGS= 10 V|ID= 5 A, VDS= 320 V|-|15|30|nC|
|Gate-Source Charge|Qgs|||-|4|-||
|Gate-Drain Charge|Qgd|||-|7|-||
|Turn-On Delay Time|td(on)|VDD= 400 V, ID= 10 A,<br>VGS= 10 V, Rg= 9.1||-|12|24|ns|
|Rise Time|tr|||-|18|36||
|Turn-Off Delay Time|td(off)|||-|18|36||
|Fall Time|tf|||-|14|28||
|Gate Input Resistance|Rg|f = 1 MHz, open drain||0.9|1.8|3.6||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous Source-Drain Diode Current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|10|A|
|Pulsed Diode Forward Current|ISM|||-|-|40||
|Diode Forward Voltage|VSD|TJ= 25 °C, IS= 5 A, VGS= 0 V||-|-|1.2|V|
|Reverse Recovery Time|trr|TJ= 25 °C, IF= IS= 5 A,<br>dI/dt = 100 A/μs, VR= 25 V||-|230|-|ns|
|Reverse Recovery Charge|Qrr|||-|1.6|-|μC|
|Reverse Recovery Current|IRRM|||-|14|-|A|



## **Notes** 

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS. 

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. 

S16-0799-Rev. B, 02-May-16 

Document Number: 91519 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF740B** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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25<br>TOP        15 V<br>14 V13 V TJ = 25 °C<br>12 V<br>20  11 V 11 V<br>10 V<br>9 V<br>8 V<br>7 V<br>15  6 V<br>BOTTOM   5 V<br>10<br>5<br>0<br>0  5  10  15  20  25  30<br>VDS, Drain-to-Source Voltage (V)<br>, Drain-to-Source Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 1 - Typical Output Characteristics** 

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3<br>2.5 I D  = 5 A<br>2<br>1.5<br>1<br>V GS  = 10 V<br>0.5<br>0<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>TJ, Junction Temperature (°C)<br>, Drain-to-Source<br>DS(on)<br>R<br>On Resistance (Normalized)<br>**----- End of picture text -----**<br>


**Fig. 4 - Normalized On-Resistance vs. Temperature** 

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16<br>TOP        15 V14 V TJ = 150 °C<br>13 V<br>12 V<br>11 V<br>12   10 V<br>9 V<br>8 V<br>7 V<br>BOTTOM    6 V<br>8<br>4<br>5 V<br>0<br>0  5  10  15  20  25  30<br>VDS, Drain-to-Source Voltage (V)<br>, Drain-to-Source Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 2 - Typical Output Characteristics** 

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  25<br>20<br>15<br>10<br>TJ = 150 °C<br>  5<br>TJ = 25 °C<br>0<br>0  5  10  15  20  25<br>VGS, Gate-to-Source Voltage (V)<br>, Drain-to-Source Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3 - Typical Transfer Characteristics** 

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10 000<br>VGS = 0 V, f = 1 MHz<br>Ciss = Cgs + Cgd, Cds Shorted<br>C rss  = C gd<br>1000 C iss Coss = Cds + Cgd<br>100<br>C oss<br>10<br>Crss<br>1<br>0 50   100  150  200  250  300  350  400<br>VDS, Drain-to-Source Voltage (V)<br> Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage<br>24<br>VDS = 400 V<br>VDS = 250 V<br>20 V DS  = 100 V<br>16<br>12<br>8<br>4<br>  0<br>0   5   10   15   20   25<br>Qg, Total Gate Charge (nC)<br>Capacitance (pF)<br>, Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** 

**Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage** 

S16-0799-Rev. B, 02-May-16 

Document Number: 91519 

**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF740B** 

www.vishay.com 

Vishay Siliconix 

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100<br>TJ = 150 °C<br>10<br>TJ = 25 °C<br>1<br>0.1<br>V GS  = 0 V<br>0.01<br>0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VSD, Source-Drain Voltage (V)<br>, Reverse Drain Current (A)<br>ISD<br>**----- End of picture text -----**<br>


**Fig. 7 - Typical Source-Drain Diode Forward Voltage** 

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12.0<br>10.0<br>8.0<br>6.0<br>4.0<br>2.0<br>0<br>25 50 75 100 125 150<br>TJ, Case Temperature (°C)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9 - Maximum Drain Current vs. Case Temperature** 

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100 500<br>I DM = Limited<br>Limited by R DS(on) * 475<br>10 450<br>100 μ s<br>425<br>Operation in this Area<br>Limited by R DS(on) 1 ms<br>1  400<br>T C  = 25 °C 375<br>TJ = 150 °C 10 ms<br>Single Pulse BVDSS Limited<br>0.1  350<br>1 10 100 1000 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature (°C)<br>* VGS > minimum VGS at which RDS(on) is specified<br>, Drain-to-Source<br>, Drain Current (A)<br>ID VDS Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 8 - Maximum Safe Operating Area** 

**Fig. 10 - Temperature vs. Drain-to-Source Voltage** 

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1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.02<br>0.1<br>0.05<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>Pulse Time (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case** 

S16-0799-Rev. B, 02-May-16 

Document Number: 91519 

**4** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF740B** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

## www.vishay.com 

**==> picture [415 x 281] intentionally omitted <==**

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RD<br>VDS QG<br>10 V<br>VGS<br>D.U.T.<br>RG +- VDD QGS QGD<br>10 V VG<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br>Charge<br> Fig. 12 - Switching Time Test Circuit  Fig. 16 -  Basic Gate Charge Waveform<br>Current regulator<br>Same type as D.U.T.<br>VDS<br>90 %<br>50 kΩ<br>12 V 0.2 µF<br>0.3 µF<br>+<br>10 % D.U.T. - VDS<br>VGS<br>td(on) tr td(off) tf VGS<br>3 mA<br> Fig. 13 - Switching Time Waveforms<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br>


**Fig. 16 -  Basic Gate Charge Waveform** 

**Fig. 17 - Gate Charge Test Circuit** 

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L<br>VDS<br>Vary tp to obtain<br>required IAS<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>10 V<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig. 14 - Unclamped Inductive Test Circuit** 

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VDS<br>t<br>p<br>VDD<br>VDS<br>IAS<br>**----- End of picture text -----**<br>


**Fig. 15 - Unclamped Inductive Waveforms** 

S16-0799-Rev. B, 02-May-16 

Document Number: 91519 

**5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF740B** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


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Peak Diode Recovery dV/dt Test Circuit<br>+ Circuit layout considerations<br>D.U.T.<br>•  Low stray inductance<br>•  Ground plane<br>•  Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg •  dV/dt controlled by Rg +<br>••   Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>•  D.U.T. - device under test<br>Driver gate drive<br>Period D = P.W.<br>P.W. Period<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br>


**Fig. 18 - For N-Channel** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91519._ 

S16-0799-Rev. B, 02-May-16 

Document Number: 91519 

**6** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

www.vishay.com 

Vishay Siliconix 

**TO-220-1** 

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A MILLIMETERS INCHES<br>E DIM.<br>MIN. MAX. MIN. MAX.<br>F<br>A 4.24 4.65 0.167 0.183<br>Ø P b 0.69 1.02 0.027 0.040<br>b(1) 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.33 15.85 0.564 0.624<br>E 9.96 10.52 0.392 0.414<br>m et | SS<br>e 2.41 2.67 0.095 0.105<br>e(1) 4.88 5.28 0.192 0.208<br>F 1.14 1.40 0.045 0.055<br>H(1) 6.10 6.71 0.240 0.264<br>1 2 3<br>J(1) 2.41 2.92 0.095 0.115<br>L 13.36 14.40 0.526 0.567<br>L(1) 3.33 4.04 0.131 0.159<br>M [*] Ø P 3.53 3.94 0.139 0.155<br>Q 2.54 3.00 0.100 0.118<br>a b(1)<br>ECN: X15-0364-Rev. C, 14-Dec-15<br>DWG: 6031<br>Note<br>• M* = 0.052 inches to 0.064 inches (dimension including<br>protrusion), heatsink hole for HVM<br>C<br>b<br>e<br>7 | t J(1) | =———<br>oT e(1)<br>Package Picture<br>ASE Xi’an<br>———<br>Q<br>H(1)<br>D<br>L(1)<br>L<br>**----- End of picture text -----**<br>


Revison: 14-Dec-15 

Document Number: 66542 

**1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

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Revision: 13-Jun-16 

Document Number: 91000 

**1**