IRF7389TRPBF

Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7.3 A, 7.3 A, 0.023 ohm

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: Complementary N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: SOIC
Operating Temperature Max: 150°C
Power Dissipation N Channel: 2.5W
Power Dissipation P Channel: 2.5W
Drain Source Voltage Vds N Channel: 30V
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id N Channel: 7.3A
Continuous Drain Current Id P Channel: 7.3A
Drain Source On State Resistance N Channel: 0.023ohm
Drain Source On State Resistance P Channel: 0.023ohm

Delivery and price
Units per pack	12000
Price	0.284 €
Current stock	10+
Lead time	30 days

Datasheet

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N-CHANNEL MOSFET<br>S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2 Voss| 30V | -30V<br>G2 4 5 D2<br>P-CHANNEL MOSFET Ω Ω<br>Rosen] 0.029 0.058<br>Top View<br>**----- End of picture text -----**<br>


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## Absolute Maximum Ratings ( T, = 25°C Unless Otherwise Noted) 

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V<br>ID 135.9 A<br>25<br>PD<br>Symbol_| Limit<br>| Units<br>θ<br>1<br>**----- End of picture text -----**<br>


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∆ AV ∆ Ty | Breakd Volt T . Coeffi_ t | N-Ch| — [0.022 e Reference to 25°C, ul Ip = 1mA<br>R Static Drain-to-Source On-Resist Ω = 4.5V, Ip = 4.<br>DS(ON) atic Drain-to-Source On-Resistance och ~— 0.042 0.058 Vas = -10V. Ip =-4.9A ©<br>Vvest) Gate Threshold Volt [.N-Ch]—_ =1.0)oor— | 0.098— | | Yosyes = goVes IDFIb wets 49VHA ®<br>“owe “P-Ch -1.0)— | — | ‘| Vos Ves. Ip = -250HA<br>|.N-ch| — | —/ 100 | Vos = 24V, Vas = OV<br>I Dss Drain-to-Srain-to-Source LeakLeakage CcCurrent |iN-chi P-ch| ——|| —— || -1.05 | yA VosVos = = -24V,24V. VegJ Ves = = OV, OV T) = 55°C<br>‘less ___|Gate-to-Source Forward Leakage ||P-Ch|N-P | — | — |[+100]-25 nA | V oseg =  -24V,+20V Ves = OV, Ty = 55°C<br>Gate-to-SourceGate-to-Drain ("Miller") Charge Charge |.N-Ch|Pherase—13.88| 2.6- | 3.9-  | nc IpnelIp = = -4.9A,5.8A, Vos Vps = = -15V,T8V, Ves Veg = =10V -10V<br>Ω,<br>ise Ti |.N-Ch| — | 8.9/ 13 | Von = 28V; Ω In= 1.08, Re= 6.0<br>|N-Ch| — | 26 | 39 |<br>Vpp = -15V, Ip = -1.0A,Rg =6.0 Ω<br>ty Fall Time |N-Ch) — | 17 | 26 | Ron 45 Ω<br>**----- End of picture text -----**<br>


≤ ≤ max. junction temperature. ( See fig. 22 ) N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/us, Vop ≤ Verypss, Ty ≤ 150°C ® Surface mounted on FR-4 board, t ≤ P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/us, Vpp ≤ VBR)Dss: Ty ≤ 150°C N-Channel Starting Tj = 25°C, L=10mMH Rg= 25 Ω , Ins=4.0A. (See Figure 12) P-Channel Starting Tj = 25°C, L=35mH Re = 25, Ω In~g=-2.8A. 

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100 100<br> TOP           15V                   10V                   7.0V                   5.5V ves TPeeeeee ee  TOP           15V                   10V                   7.0V                   5.5V ves eeppp ee eery<br>                   4.5V ee                    4.5V ee<br>                   4.0V                    4.0V<br>                   3.5V                    3.5V<br> BOTTOM   3.0V Se  —  BOTTOM   3.0V eeeSO ee ee<br>10 10<br> 3.0V<br>YWJUfo 7aaiy  3.0V ||\#HfffP$sff hey<br>Ly A Eee Y ppm eee<br>CARE ell V Jd<br>1  T   = 25°CJ A 1  T   = 150°CJ<br>0.1 O 1 R 10 ee A 0.1 ee 1 10<br>V      , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I    , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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100 ————— 100 ———————— —<br>eea es ee oe oe reeeee<br>ee ee a eeeeee ee<br>T  = 25°CJ ee ee ee pj ff tt<br>T  = 150°CJ<br>ee a T  = 150°CJ ee<br>10 wo t tt 10 L L<br>T  = 25°CJ<br>ee Pr tf OU A TP<br>ee re ee a ff<br>a ee ne ee 2 ee ee eee<br>a ee eee ee | tT A If Tt<br>re PY vy tt<br> V     = 10VDS<br>1 S| fessousewond A = 1 LAA L |<br>3.0 3.5 4.0 4.5 5.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>V     , Gate-to-Source Voltage (V)GS V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.0 0.040<br>ID = 5.8A<br>Po ny] = ff<br>0.036<br>CUTE) F e<br>1.5<br>OUTOTORORUENG)9<br>s 0.032 |  te]<br>ee [yaaa] "0000 am eee ee<br>1.0 CEU ArT  g  o| |<br>eT} 62 0.028 Fd<br>THIET) ss Ff<br>0.5<br>0.024<br>TP) Py<br>0.0 PEL E] VGS= 10V op e 0.020 LEet —<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40 [A]<br>T  , Junction TemperatureJ (  C)°<br>I   , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.12 200<br>> PLTTTLLLLI_ Pf TOP            1.8A<br>                   3.2A<br>8 0.10 160 ft BOTTOM    4.0A<br>3 Pt Na<br>2 0.08 P| yt tt rY TF 4<br>§ Po 120 Nees<br>ee 0.06 P| tet | ty<br>B P|eei tt 80 GENENEN<br>2 0.04 | ft<br>s -~FIN PL span NNT NT<br>40<br>es 0.02 | | ft ft ty Ea  NS\GRn<br>a ee ee ee ASN<br>@ LLLes ee ee e e ee<br>0.00 tT yet 0 e A<br>0 3 6 9 12 15 [A] 25 50 75 100 125 150<br>V       , Gate-to-Source Voltage (V)GS  Starting T  , Junction Temperature (°C)J<br>Ω<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>Ω<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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1200 20<br>V      = 0V,         f = 1MHzGS ID = 5.8A<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds VDS = 15V<br>C      = Crss         gd<br>Waa C      = C     + Coss        ds         gd 16 ee<br>900 INS Pt | [|<br>s<br>12<br>NH ss TTA<br>600 P| Pe PSN IT ne<br>8<br>lll pi [tigi]<br>EAA<br>PNET {|<br>300 ss<br>Th 4 poet<br>See | RARER<br>0 | A 0 A| |<br>1 10 100 0 10 20 30 40<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>D = 0.50<br>a esas i emai rem", a<br> 10 0.20<br>0.10<br>0.05<br>= ot eer PDM<br>0.02<br> 1 = 0.01 eeeTIE | t1<br>t2<br>|<br>Notes:<br>SINGLE PULSE<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>attTT a PUAUPPTLL 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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100  TOP         - 15V vest} 100  TOP         - 15V vest<br>                 - 10V                  - 10V<br>                 - 7.0V                  - 7.0V<br>                 - 5.5V                  - 5.5V<br>                 - 4.5V                  - 4.5V<br>                 - 4.0V Ps ee                  - 4.0V ee<br>                 - 3.5V                  - 3.5V<br> BOTTOM - 3.0V EE ee  BOTTOM - 3.0V ly<br>oY Zee fhm<br>10 bea 10 |_fy<br>J ‘ss f# A jp | | AA fog<br>TfLWII 4aooteee O—#h| NM [hae] etee<br> -3.0V<br> -3.0V<br>Yfyy e l Yh or<br>Ys ee WY Ball<br>1  T   = 25°CJ A 1  T   = 150°CJ<br>0.1 UY, | 1 nresewon| 10 —— Y 0.1 | 1 Z sancuseuor 10<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics<br>100 ee ee 100 eeee<br>oe ee<br>es [ee] ee ee<br>a OO a a<br>peefee ee ee eee ee eeee ee ee<br>T  = 25°CJ<br>a a eee | po ff T  = 150°CJ e-<br>T  = 150°CJ<br>10 Tt ) 10 L e<br>A ee ey A ey A T  = 25°CJ<br>VA ee ee ee ee ee ee ee ee eee eee<br>Poet tt P| Yo YF | ft<br>eee Pi A ff<br> V     = -10VDS<br>1 PLL feaweusewond A  = 1 LAL A | di<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.4 0.6 0.8 1.0 1.2 1.4<br>-V     , Gate-to-Source Voltage (V)GS -V     , Source-to-Drain Voltage (V)SD<br>D D<br>-I   , Drain-to-Source Current (A) -I   , Drain-to-Source Current (A)<br>SD<br>-I     , Reverse Drain Current (A)<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.0 0.6<br>ID = 4.9A<br>C oo «6; FEE<br>0.5<br>1.5<br>COUPEE<br>0.4<br>TTT) «2 -  ff<br>1.0 a eT cs 0.3 ee eeee<br>LTTE,aan 22 0.2 Fe[vy<br>PUREE saswf ||<br>0.5<br>Pe 0.1 =<br>og =e<br>0.0 PUT T) VGS = 10V aa 0.0 EEEA———_————Le tt<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)° 0 -Ip 10 , Drain Current 20 (A) 30 [A]<br>Fig 16. Normalized On-Resistance Fig 17. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.16 300<br>IDD<br>- Ot.) eee TOP -1.3A<br>250 -2.2A<br>BOTTOM -2.8A<br>PE 0.12 uP yy RAE<br>5 TXT<br>200<br>PTT A AR<br>8 0.08 150 MINEpEp<br>| O NT NNN<br>100<br>PLN 0.04 PSST<br>5 Pe See PT<br>50 RS<br>OPPS NAIK<br>PE LSS<br>ce 0.00 0 ee ee ee<br>0 3 6 9 12 15 [A] 25 50 75 100 125 150<br>Ω<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>Ω<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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300<br>IDD<br>eee TOP -1.3A<br>250 -2.2A<br>BOTTOM -2.8A<br>RAE<br>TXT<br>200<br>A AR<br>150 MINEpEp<br>NNN<br>100<br>PSST<br>PT<br>50 RS<br>NAIK<br>LSS<br>0 ee ee ee<br>25 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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1400 20<br>ID = -4.9A<br>VDS =-15V<br>1200<br>Ss 16 Pt |<br>1000 EQN |<br>INNa s )] AEE rT oT fF of ll pl<br>pS ee ll 12 rT | TlUT CLA Td<br>800<br>ss<br>Ry y,<br>600 PONTS EEE<br>8<br>PN 4<br>400<br>s<br>PPS nef<br>ne | 4 Pi iA | |<br>200<br>as ,._ann<br>a eel Zag<br>0 Pe ee A 0<br>1 10 100 0 10 20 30 40<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 20. Typical Capacitance Vs. Fig 21. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>D = 0.50<br>e EY ea_.at<br> 10 0.20<br>0.10<br>0.05<br>Ser een” iii<br>PDM<br>0.02<br> 1<br>0.01 t1<br>P T t2<br>Notes:<br>SINGLE PULSE<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>0.1 iatt i SUPENCETT CIM 2. Peak TJ= P DM x  Z thJA + TA<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>6 H D .189 .1968 4.80 5.00<br>E 0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>na | -—sra ———<br>e1 .025  BASIC 0.635  BASIC<br>| ——— H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oH oe L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>aor 8X b A1 [ : Lf 8X L 8X c<br>0.25 [.010]  C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER aApee<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>:      MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. F and<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>O      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. oan<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR XXXX WW =  WEEK INTERNATIONAL F7101 A =  ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO ~~ee~~ 

PART NUMBER 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>eos) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION ss<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

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Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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