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IRF7380TRPBF
Dual MOSFET, N Channel, 80 V, 80 V, 3.6 A, 3.6 A, 0.061 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 80V
- Drain Source Voltage Vds P Channel: 80V
- Continuous Drain Current Id N Channel: 3.6A
- Continuous Drain Current Id P Channel: 3.6A
- Drain Source On State Resistance N Channel: 0.061ohm
- Drain Source On State Resistance P Channel: 0.061ohm
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.359 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **Applications**
High frequency DC-DC converters Lead-Free
|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**80V**|**73m @VGS = 10V**|**3.6A**|
## **Benefits**
Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
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S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>Top View SO-8<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
|~~a~~|**Parameter**<br>~~a~~|**Max.**<br>|**Units**<br>|
|---|---|---|---|
|VDS<br>~~a~~|Drain-to-Source Voltage<br>~~a~~|80<br>|V<br>~~+|~~|
|VGS<br>~~a~~<br>~~———~~|Gate-to-Source Voltage<br>~~a+~~<br>~~———~~|± 20<br>~~+~~<br>~~ee~~||
|ID@ TA= 25°C<br><br>~~a~~<br>~~———~~|Continuous Drain Current, VGS@ 10V<br>~~+~~<br>~~a~~<br>~~———~~|3.6<br>~~+~~<br>~~a~~<br>~~ee~~|A<br>~~+|~~<br>~~a~~|
|ID@ TA= 100°C<br>~~a~~<br>~~———~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~———~~|2.9<br>~~a~~<br>~~ee~~||
|IDM<br>~~a~~<br>~~———~~|Pulsed Drain Current<br>~~a~~<br>~~———~~|29<br>~~a~~<br>~~ee~~||
|PD@TA= 25°C<br>~~———~~|Maximum Power Dissipation<br>~~———~~<br>~~rn~~|2.0<br>~~ee~~<br>~~rn~~|W<br>~~rn~~|
||Linear DeratingFactor<br>~~rn~~|0.02<br>~~rn~~|W/°C<br>~~rn~~|
|dv/dt|Peak Diode Recoverydv/dt<br>~~ee~~|2.3<br>~~ee~~|V/ns<br>~~ee~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55 to + 150<br>~~ee~~|°C<br>~~ee~~|
## **Thermal Resistance**
||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJL|Junction-to-Drain Lead|–––|42|°C/W|
|RθJA|Junction-to-Ambient(PCB Mount)|–––|62.5||
Notes oO) hrough © are on page 8
## IRF7380PbF
## **Static @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|80|–––|–––|V|VGS= 0V,ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient|–––|0.09|–––|V/°C|Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|61|73|mΩ|VGS= 10V,ID= 2.2A�|
|VGS(th)|Gate Threshold Voltage|2.0|–––|4.0|V|VDS= VGS,ID= 250µA|
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|µA|VDS= 80V, VGS= 0V<br>VDS= 64V,VGS= 0V,TJ= 125°C|
|||–––|–––|250|||
|IGSS|Gate-to-Source Forward Leakage|–––|–––|200|nA|VGS= 20V<br>VGS= -20V|
||Gate-to-Source Reverse Leakage|–––|–––|-200|||
## **Dynamic @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Conditions**|
|---|---|---|---|---|---|---|---|
|gfs|Forward Transconductance|4.3|–––|–––|S|VDS= 25V,ID= 2.2A||
|Qg|Total Gate Charge|–––|15|23|nC|ID= 2.2A<br>VDS= 40V<br>VGS= 10V�||
|Qgs|Gate-to-Source Charge|–––|2.9|–––||||
|Qgd|Gate-to-Drain("Miller")Charge|–––|4.5|–––||||
|td(on)|Turn-On DelayTime|–––|9.0|–––|ns|VGS= 10V�<br>VDD= 40V<br>ID= 2.2A<br>RG= 24Ω||
|tr|Rise Time|–––|10|–––||||
|td(off)|Turn-Off DelayTime|–––|41|–––||||
|tf|Fall Time|–––|17|–––||||
|Ciss|Input Capacitance|–––|660|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz||
|Coss|Output Capacitance|–––|110|–––||||
|Crss|Reverse Transfer Capacitance|–––|15|–––||||
|Coss|Output Capacitance|–––|710|–––||VGS= 0V, VDS= 1.0V, ƒ = 1.0MHz<br>VGS= 0V, VDS= 64V, ƒ = 1.0MHz<br>VGS= 0V,VDS= 0V to 64V�||
|Coss|Output Capacitance|–––|72|–––||||
|Cosseff.|Effective Output Capacitance|–––|140|–––||||
|**Avalanche Characteristics**||||||||
||**Parameter**||**Typ.**|||**Max.**|**Units**|
|EAS|Single Pulse Avalanche Energy ��||–––|||75|mJ|
|IAR|Avalanche Current��||–––|||2.2|A|
|**Diode Characteristics**||||||||
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**||
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|3.6|A|S<br>D<br>G<br>MOSFET symbol<br>showing the<br>integral reverse<br>p-njunction diode.||
|ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|29|A|||
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C, IS= 2.2A, VGS= 0V�||
|trr|Reverse RecoveryTime|–––|50|–––|ns|TJ= 25°C, IF= 2.2A, VDD= 40V<br>di/dt = 100A/µs�||
|Qrr|Reverse RecoveryCharge|–––|110|–––|nC|||
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## IRF7380PbF
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100<br>VGS<br>TOP 15V<br>10V<br>7.0V<br>10 5.0V<br>4.5V<br>4.3V<br>4.0V<br>BOTTOM 3.7V<br>1<br>eee eee ee el<br>3.7V<br>0.1<br>0.01<br>C ee eee<br>EH<br>20µs PULSE WIDTH<br>Tj = 25°C<br>0.001 Pe ll<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>100 —<br>a oe<br>fn aa<br>10<br>TJ = 150°C<br>7<br>ee oo<br>TJ = 25°C<br>a<br>1<br>— — ———<br>————<br>VDS = 15V<br>a s e<br>20µs PULSE WIDTH<br>0<br>es re<br>3.0 4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
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100<br>VGS<br>TOP 15V<br>10V<br>7.0V<br>5.0V<br>4.5V<br>4.3V<br>10 4.0V<br>BOTTOM 3.7V<br>ee em ||<br>1 3.7V<br>Jag All| oO |<br>AN | 20µs PULSE WIDTH Hill<br>Tj = 150°C<br>0.1 YAR A<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 2.** Typical Output Characteristics
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2.5<br>I D = 3.6A<br>Po ELE<br>2.0<br>SE EREREERERERRRRREEPA<br>PEELEEEE<br>1.5<br>Et<br>XY<br>1.0<br>LL er ET<br>tec ETE<br>0.5 eT EEEEE<br>PEELE EEE<br>V GS = 10V<br>0.0 EEE EE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ, Junction Temperature (°C)<br>(Normalized)<br>RDS(on), Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance Vs. Temperature
## IRF7380PbF ~~i~~
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100000 12<br>VGS = 0V, f = 1 MHZ ID= 2.1A<br>Ciss = Cgs + Cgd, Cds SHORTED VDS= 64V<br>10000 = Crss = Cgd 10 a VDS= 40V TI<br>C = C + C<br>a OO oss ds OO gd 8 VDS= 16V 7 |<br>1000 e e Ciss T ELL Lf l_<br>6<br>100 P R Coss Lt td<br>4<br>C<br>10 rss<br>2<br>1 aeeee eeeeee ee ee 0 V t<br>1 10 100 0 2 4 6 8 10 12 14 16<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100 100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>ee ee ra PITS LT O<br> 10 a 10<br>T = 25 CJ ° 100µsec<br>ee T = 150 CJ ° e e St<br> 1 See 1 1msec cit<br>ee As a a<br>a a ee as Seane Tc = 25°C eesesi ee ees le 10msec aii<br>es Tj = 150°C seen meee<br>V = 0 V GS Single Pulse el<br>0.1 Pt [pT] 0.1 ee ad ene<br>0.0 0.5 1.0 1.5 2.0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V)<br>VDS, Drain-to-Source Voltage (V)<br>, Reverse Drain Current (A)<br>ISD<br>ID, Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
## IRF7380PbF
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4.0<br>PAN~ |<br>3.0 PLTPNPNPN EE<br>NX<br>2.0<br>PPT IN NEIN<br>\<br>Pet<br>1.0<br>TT PN<br>0.0<br>Petty TT<br>25 50 75 100 125 150<br>TA , Ambient Temperature (°C)<br>I , Drain Current (A)D<br>**----- End of picture text -----**<br>
**Fig 9.** Maximum Drain Current Vs. Ambient Temperature
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-<br>≤ 1<br>≤ 0.1 %<br>ytseeDuty10VFactor<br>tr<br>Fig 10a. Switching Time Test Circuit<br>VDS<br>90%<br>\<br>10%<br>VGS |\<br>\re >| tool ><br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 10b.** Switching Time Waveforms
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100<br>a eee __eee ee<br>D = 0.50<br>Ry eee ___. ee eee el<br>0.20 ST eTeeeee<br> 10 p 0.10 eerAT |<br>a a ee ee eee se a 0 ee eee<br>PTT eee rrr a<br>a 0.05 rc ce a a 2<br>e 0.02 h ea P DM<br> 1<br>ee 0.01 | t 1<br>a ee ee ee<br>aa aea ae8 2e t 2<br>|} | | SINGLE PULSE | | Tefy Notes: eee<br>(THERMAL RESPONSE)<br>aan 0 1. Duty factor D = t / t1 2<br>2. Peak T J = P DM x Z thJA + T A<br>0.1 amanill PTHEY EUIAT T<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
## IRF7380PbF ~~as~~
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95 800<br>90 fF | | | | ft 700 P al f t t<br>85 eo<br>600<br>80<br>i ee |<br>VGS = 10V 500<br>75<br>: a A O EE<br>400<br>70<br>fF | | | ff | 4<br>300<br>65 ID = 3.6A<br>A e e 200 ee e<br>60<br>| | ee 44 4<br>55 100<br>o a oa<br>50 | {| {| {| {| | | 0 S eeeSee<br>0 5 10 15 20 25 30 3.0 5.0 7.0 9.0 11.0 13.0 15.0<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage (V)<br>Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V IT: .2µF<br>.3µF QGS QGD<br>meS| D.U.T. +-VDS Ves VG _ ; 200 I D<br>VGS TOP 1.0A<br>3mA Charge 1.8A<br>ea IG ID 160 ooo BOTTOM 2.2A<br>Current Sampling Resistors<br>ea e p<br>B NR<br>Fig 14a&b. Basic Gate Charge Test Circuit 120<br>and Waveform PN<br>80 NE [NESE] | ft<br>KAY ON |<br>15V<br>V(BR)DSS 40 PSSONE<br>tp VDS L DRIVER<br>—- po OS AR<br>R G D.U.T +<br>IAS - [V][DD] A 0 25 50 75 100 125 150<br>20V<br>I AS / | - tp 0.01Ω Pt Starting TJ, Junction Temperature (°C) | SS<br>, Single Pulse Avalanche Energy (mJ)<br>AS<br>E<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (m<br>)Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms
**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current
## IRF7380PbF
Dimensions are shown in milimeters (inches)
## SO-8 Part Marking Information
## IRF7380PbF
## **SO-8 Tape and Reel**
Dimensions are shown in millimeters (inches)
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TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>NOTES:<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
® Repetitive rating; pulse width limited by max. junction temperature. @ Starting TJ = 25°C, L = 31mH RG = 25Ω, IAS = 2.2A. @ Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
## **Revision History**
|**Revision Historyy**||
|---|---|
|**Date**|**Comments**|
|09/16/2013|Updated the Rthja from 50°C/W to 62.5°C/W, on page 1.<br>Converted the data sheet to IR Corproate Template.|
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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