Image not available
Illustrative purposes only
IRF7379TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 5.8 A, 0.038 ohm, SOIC, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 2.5W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.038ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 5.8A
- Power Dissipation N Channel: 2.5W
- Power Dissipation P Channel: 2.5W
- Gate Source Threshold Voltage Max: 1V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 5.8A
- Continuous Drain Current Id P Channel: 5.8A
- Drain Source On State Resistance N Channel: 0.038ohm
- Drain Source On State Resistance P Channel: 0.038ohm
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.291 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
**==> picture [207 x 278] intentionally omitted <==**
**----- Start of picture text -----**<br>
IRF7379PbF<br>HEXFET [®] Power MOSFET<br>S1 N-CHANNEL MOSFET1 8 D1 N-Ch P-Ch<br>G1 2 7 D1<br>VDSS 30V -30V<br>S2 3 6 D2<br>G2 4 5 D2<br>P-CHANNEL MOSFET R .045Ω .090Ω<br>DS(o<br>Top View<br>ins<br>SO-8<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
|Parameter|Parameter<br>Paramet<br>tit|**Max.**<br>Parameter<br>tit|**Max.**<br>Parameter<br>tit|tit|
|---|---|---|---|---|
|||N-Channel<br>Parameter<br>tit|P-Channel<br>Parameter<br>tit||
|VSD<br>i|Drain-to-Source Voltage<br>|30<br>|-30<br>|W<br>EEE<br>ae|
|ID@ TA= 25°C<br>EEE|Continuous Drain Current, VGS@ 10V<br>EEE|5.8<br>EEE|-4.3<br>EEE||
|ID@ TA= 70°C<br>EEE<br>a|Continuous Drain Current, VGS@ 10V<br>EEE<br>a|4.6<br>EEE<br>a|-3.4<br>EEE<br>a||
|IDM<br>a|Pulsed Drain Curren<br>a|46<br>a|-34<br>a||
|PD@TA= 25°C<br>a<br>ee|Power Dissipation<br>a<br>ae|2.5<br>a<br>ae|||
|ee|Linear Derating Factor<br>ae|0.02<br>ae||W/°C<br>ae|
|VGS<br>ee|Gate-to-Source Voltage<br>ae<br>ooo|± 20<br>ae<br>ooo||V<br>ae<br>ooo|
|dv/dt<br>ee<br>TT|Peak Diode Recovery dv/dt<br>ae<br>TT|5.0<br>-5.0<br>ae<br>TT||V/ns<br>ae<br>TT|
|TJ,TSTG<br>TET|Junction and Storage Temperature Range<br>TET|-55 to + 150<br>TET||°C<br>TET|
## **Thermal Resistance Ratings**
|~~ee~~|**Parameter**<br>~~ee~~<br>|**Max.**<br>~~ee~~<br>|**Units**<br>~~ee~~<br>|
|---|---|---|---|
|RθJA<br>~~eees~~|Maximum Junction-to-Ambient<br>~~ee~~<br>~~es~~|50<br>~~ee~~<br>~~es~~|°C/W<br>~~ee~~<br>~~es~~|
10/7/04
|a|Parameter||Min.|Typ.|Max. Units|Units|Conditions|
|---|---|---|---|---|---|---|---|
|V(BR)DSS<br>a<br>aeee|Drain-to-Source Breakdown Voltage<br>eee<br>ee|N-Ch<br>eee<br>eeee|30<br>eee<br>ee|—<br>eee<br>ee|—<br>eee<br>ee|eee|VGS= 0V, ID= 250µA|
|||P-Ch<br>eee<br>eeee|-30<br>eee<br>ee|—<br>eee<br>ee|—<br>eee<br>ee||VGS= 0V, ID= -250µA|
|∆V(BR)DSS/∆TJ <br>aeee<br>ire|Breakdown Voltage Temp. Coefficient<br>eee<br>ee<br>ire|N-Ch<br>eee<br>eeee<br>ire|—<br>eee<br>ee<br>ire|0.032<br>eee<br>ee<br>ire|—<br>eee<br>ee<br>ire|eee<br>ire|Reference to 25°C, ID= 1mA<br>Reference to 25°C, ID= -1mA|
|||P-Ch<br>ire|— <br>ire|-0.037<br>ire|-0.037 —<br>ire|||
|RDS(ON)<br>ire<br>a|Static Drain-to-Source On-Resistance<br>ire<br>|<br>PoE|N-Ch<br>ire<br>|<br>pf<br>PoE|—<br>ire<br>+++<br>pf|0.038 0.045<br>ire<br>+++<br>pf|0.038 0.045<br>ire<br>+++|Ω<br>ire|VGS= 10V, ID= 5.8A<br>:<br>@|
||||—<br>+++<br>pf<br>PoE|0.055 0.075<br>+++<br>pf<br>PoE|0.055 0.075<br>+++<br>PoE||VGS= 4.5V, ID= 4.9A<br>:<br>@<br>:|
|||P-Ch<br>|<br>pf<br>PoE<br>pf|—<br>+++<br>pf<br>PoE<br>pf|0.070 0.090<br>+++<br>pf<br>PoE<br>pf||0.070 0.090<br>+++<br>PoE<br>|||VGS= -10V, ID=- 4.3A<br>:<br>@<br>:<br>@|
||||—<br>PoE<br>pf|0.130 0.180<br>PoE<br>pf||0.130 0.180<br>PoE<br>|||VGS= -4.5V, ID=- 3.7A<br>:<br>@|
|VGS(th)<br>a<br>a|Gate Threshold Voltage<br>PoE<br>ee<br>|N-Ch<br>PoE<br>pf<br>|1.0<br>PoE<br>pf<br>|—<br>PoE<br>pf|<br>ee<br>|—<br>PoE<br>|<br>|ww<br>||VDS= VGS, ID= 250µA<br>:<br>@|
|||P-Ch <br>pf<br>ee<br>|-1.0<br>pf<br>ee<br><br>eee|—<br>pf|<br>ee<br>ee<br><br>eee|—<br>|<br>ee<br><br>eee||VDS= VGS, ID= -250µA<br>@<br>;|
|gfs<br>aee|Forward Transconductance<br>ee<br>ee|N-Ch<br>ee<br>ee|5.2<br>ee<br>eee<br>ee|—<br>ee<br>ee<br>eee<br>ee|—<br>ee<br>eee||VDS= 15V, ID= 2.4A<br>;<br>@|
|||P-Ch<br>ee<br>ee|2.5<br>ee<br>eee<br>ee|—<br>ee<br>ee<br>eee<br>ee|—<br>ee<br>eee||VDS= -24V, ID= -1.8A<br>;<br>@|
|IDSS<br><br>i|Drain-to-Source Leakage Current<br>ee<br>a<br>i—|_|_1<br>——<br>a<br><br>|N-Ch<br>ee<br>a ee<br>i—|_|_1|—<br>eee<br>ee <br>ee<br>i—|_|_1|—<br>eee<br> ee<br>ee<br>i—|_|_1|1.0<br>eee<br>ee<br>i—|_|_11||VDS= 24 V, VGS= 0V<br>;<br>@|
|||P-Ch<br>i—|_|_1|—<br>i—|_|_1|—<br>i—|_|_1|-1.0<br>i—|_|_11||VDS= -24V, VGS= 0V<br>VDS= 24 V, VGS= 0V, TJ= 125°C<br>VDS= -24V, VGS= 0V, TJ= 125°C<br>||
|||N-Ch<br>i—|_|_1<br>——|—<br>i—|_|_1<br>——|—<br>i—|_|_1<br>——|25<br>i—|_|_11 <br>——|||
|||P-Ch<br>——<br>a<br><br>|—<br>——<br>a<br><br>|—<br>——<br>a<br><br>|-25<br>——<br><br>|||
|IGSS<br>aGO<br>i|Gate-to-Source Forward Leakage<br>——<br>a<br>GO<br>|N-P<br>——<br>a<br>GO<br>|––<br>——<br>a<br>GO<br>|—<br>——<br>a<br>GO<br>|±100<br>——<br>GO<br>|GO||VGS= ± 20V<br>||
|Qg<br>a GO<br>iee<br>ee|Gate-to-Source Forward Leakage<br>Total Gate Charge<br>GO<br>ee<br>|<br>|N-Ch<br>GO<br>ee<br>||<br>|—<br>GO<br>ee<br>|<br>|—<br>GO<br>ee<br>|25<br>GO<br>ee<br>|GO|<br>eel|N-Channel<br>ID= 2.4A, VDS= 24V, VGS= 10V<br>P-Channel<br>ID= -1.8A, VDS= -24V, VGS= -10V<br>|<br>3|
|||P-Ch<br><br>ee<br>||<br>|—<br><br>ee<br>|<br>|—<br><br>ee<br>|25<br><br>ee<br>|||
|Qgs<br><br>iee<br>eeeel<br>ee|Gate-to-Source Charge<br><br>ee<br>|<br>eel<br>|<br>|N-Ch<br><br>ee<br>||<br>eel<br>||<br>|—<br><br>ee<br>|<br>eel<br>|<br>|—<br><br>ee<br>eel<br>|2.9<br><br>ee<br>eel<br>|||
|||P-Ch<br>||<br>eel<br>||<br>|—<br>|<br>eel<br>|<br>|—<br>eel<br>|2.9<br>eel<br>|||
|Qgd<br>eeeel<br>eeee<br>i|Gate-to-Drain ("Miller") Charge<br>|<br>eel<br>|<br>ee<br>|N-Ch<br>| |<br>eel<br>||<br>ee**e**<br>|—<br>|<br>eel<br>|<br>**e**<br>|—<br>eel<br>**e**<br>ee<br>|7.9<br>eel<br>**e**<br>|||
|||P-Ch<br>||<br>ee**e**<br>|—<br>|<br>**e**<br>e<br>|—<br>**e**<br>e<br>ee<br>|9.0<br>**e**<br>e<br>|||
|td(on)<br>eeee<br>iee|Turn-On Delay Time<br>|<br>ee<br>ee<br>ee|N-Ch<br>| |<br>ee**e**<br>ee|—<br>|<br>**e**<br>e<br>ee|6.8<br>**e**<br>e<br>ee<br>ee|—<br>**e**<br>e<br>ee|||N-Channel<br>VDD= 15V, ID= 2.4A, RG= 6.0Ω,<br>RD= 6.2Ω<br>P-Channel<br>VDD= -15V, ID= -1.8A, RG= 6.0Ω<br>RD= 8.2Ω<br>3<br>||
|||P-Ch<br>ee<br>ee|—<br>ee<br>ee|11<br>ee<br>ee<br>ee|—<br>ee<br>ee|||
|tr<br>iee<br>ieee<br>ee|Rise Time<br>ee<br>ee<br>eee<br>ee<br>ee|N-Ch<br>ee<br>ee<br>eee<br>ee<br>|—<br>ee<br>ee<br>eee<br>ee<br>|21<br>ee<br>ee<br>ee<br>eee<br>|—<br>ee<br>ee<br>eee<br>|||
|||P-Ch<br>eee<br>ee<br>|—<br>eee<br>ee<br>|17<br>eee<br>|—<br>eee<br>|||
|td(off)<br>i eee<br>ee|Turn-Off Delay Time<br>eee<br>ee<br>ee<br>||N-Ch<br>eee<br>ee<br>eee<br>||—<br>eee<br>ee<br>eee|22<br>eee<br>eee|—<br>eee<br>eee|||
|||P-Ch<br>ee<br>eee<br>|<br>||—<br>ee<br>eee<br>||25<br>eee|—<br>eee|||
|tf<br>ee<br>i<br>1}<br>a|Fall Time<br>ee<br>ee <br>|<br>i<br>ee<br>1}<br>|N-Ch<br>ee<br> eee<br>|<br>|<br>ee<br>1}|—<br>ee<br>eee<br>|<br>ee<br>1}|7.7<br>eee<br>ee<br>ee<br>|—<br>eee<br>ee<br>|||
|||P-Ch<br>ee<br>ee<br>1}<br>|—<br>ee<br>ee<br>1}+}<br>|18<br>ee<br>ee<br>ee<br>+}<br>|—<br>ee<br>ee<br>+}<br>|||
|LD<br>i<br>1}<br>a|Internal Drain Inductace<br>i<br>ee<br>1}<br>|N-P<br>ee<br>ee<br>1}<br>|—<br>ee<br>ee<br>1}+}<br>|4.0<br>ee<br>ee<br>ee<br>+}<br>|—<br>ee<br>ee<br>+}<br>|||Between lead, 6mm (0.25in.) from<br>package and center of die contact<br>||
|LS<br>1}<br>aa|Internal Source Inductance<br>1}<br>a|N-P<br>1}<br>a|—<br>1}+}<br>a|6.0<br>ee<br>+}<br>a|—<br>+}<br>a|||
|Ciss<br>1}<br>a a|Input Capacitance<br>1}<br>a|N-Ch<br>P-Ch<br>1}<br>a|—<br>—<br>1} +}<br>a|520<br>440<br>ee<br>+}<br>a|—<br>—<br>+}<br>a||<br>a<br>)|N-Channel<br>VGS= 0V, VDS= 25V, ƒ = 1.0MHz<br>P-Channel<br>VGS= 0V, VDS= -25V, ƒ = 1.0MHz<br>a<br>)°|
|Coss|Output Capacitance<br>a<br>)|N-Ch<br>a<br>|—<br>a<br>|180<br>a<br>|—<br>a<br>|||
|||P-Ch<br>a<br>)|—<br>a<br>)|200<br>a<br>)|—<br>a<br>)|||
|Crss|Reverse Transfer Capacitance<br>)<br>a|N-Ch<br>)<br>a|—<br>)<br>a|72<br>)<br>a|—<br>)|||
|||P-Ch<br>a|—<br>a|93<br>a|—|||
a Parameter Min. Typ. Max. Units Conditions N-Ch — — 3.1 EE IS Continuous Source Current (Body Diode) P-Ch — — -3.1 N-Ch — — 46 ISM Pulsed Source Current (Body Diode) P-Ch — — -34 ee ee aee N-Ch — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V a VSD Diode Forward Voltage P-Ch | — **|** — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V c N-Ch — 47 71 N-Channel trr ee Reverse Recovery Time P-Ch — 53 80 TJ = 25°C, IF = 2.4A, di/dt = 100A/µs ee N-Ch [|eeed — {|[|] 56 84 P-Channel ©) ce) Qrr Reverse Recovery Charge P-Ch — 66 99 TJ = 25°C, IF = -1.8A, di/dt = -100A/µs **Notes:** @ Repetitive rating; pulse width limited by ©) Pulse width ≤ 300µs; duty cycle ≤ 2% , max. junction temperature. ( See fig. 10 ) @ N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ® Surface mounted on FR-4 board, t ≤ 10sec. P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
**==> picture [61 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
www.irf.com<br>**----- End of picture text -----**<br>
2
**==> picture [434 x 475] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 VGS 1000 VGS<br> TOP 15V TOP 15V<br> 10V 10V<br> 8.0V 8.0V<br> 7.0V 7.0V<br> 6.0V 6.0V<br> 5.5V 5.0V THI CIC 5.5V 5.0V en|<br> BOTTOM 4.5V BOTTOM 4.5V<br>100 100<br> 4.5V<br>| anny Z=——smnul 4.5V<br>10 | ager Tl | 10 RL)”Z on ell<br>1 (fii atic T = 25°CJ A 1 Abeee T = 150°CJ<br>0.1 1 10 100 0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS V , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 Ph 100 Se<br>Os ee a ee ee ee<br>T = 25°CJ<br>a am a<br>SESE e7 6246855 10 Pt<br>T = 150°CJ<br>PF | Ye a e| lere<br>PA RT T = 150°CJ T = 25°CJ<br>eee en 7,<br>// [q] | fe<br>1<br>Mi iit} —Ebmer<br>/ | | fF fF [| | tf | Jf Tf<br> V = 15VDS<br>10 [ 20us PULSE WIDTH) A 0.1 eePf ft tt low<br>4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5<br>V , Gate-to-Source Voltage (V)GS V , Source-to-Drain Voltage (V)SD<br>I , Drain-to-Source Current (A)D I , Drain-to-Source Current (A)D<br>I , Reverse Drain Current (A)SD<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Typical Source-Drain Diode Forward Voltage
www.irf.com
3
**==> picture [435 x 474] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 ~ 0.20<br>T il =4.0A TT); Fee<br>0.16<br>1.5<br>PEP Pee) EEEE<br>py<br>0.12<br>COPD) = EEE<br>VGS = 4.5V<br>1.0<br>er<br>0.08<br>eT) = E ee<br>0.5 PTL = VGS = 10V<br>0.04<br>COCO) eee<br>RRR<br>0.0 PUEDE A 0.00 + —-<br>-60 -40 -20 0 20 40 60 80 100 120 e 140 160 y 2 Ese 4 6 8 10<br>T , Junction Temperature (°C)J I , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>— 0.08 ET [RET?]<br>0.07 PT TT<br>PT VE | tt<br>0.06 P| TE | tt<br>P| Py |ttt<br>0.05 P| [E] | Yt [AT] Tfet tfft<br>ID = 5.8A<br>N e<br>0.04 ee eNEee<br>Pf | | |NE<br>ee<br>0.03<br>0 4 8 12 16<br>V , Gate-to-Source Voltage (V)GS<br>Ω<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>DS (on)<br>R , Drain-to-Source On Resistanc<br>Ω<br>DS (on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 7.** Typical On-Resistance Vs. Gate Voltage
www.irf.com
4
**==> picture [434 x 475] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 20<br>V = 0V, f = 1MHzGS I = 2.4AD<br>C = C + C , C SHORTEDiss gs gd ds V = 24V DS<br>C = Crss gd<br>800 C = C + Coss ds gd 16<br>=<el —++—++-++><br>s<br>600 MN at soll 12 ee ee ee<br>PN Pt EP EY<br>ss<br>400 8<br>eS ell ee Ae<br>ee ll Pit<br>200 s 4<br>BPTs EET Ty<br>a ee—__ ll AE[TT EEE SEE FIGURE 11<br>0 A 0<br>1 10 100 0 5 10 15 20 25<br>V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 8. Typical Capacitance Vs. Fig 9. Typical Gate Charge Vs.<br> Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>D = 0.50<br>a esas i emai rem", a<br> 10 0.20<br>0.10<br>= S e<br>0.05<br>= Sosere<br>i re P e DM<br>0.02<br> 1<br>0.01 t1<br>t2<br>YP | Tie Ea TT TTT<br>Notes:<br>SINGLE PULSE<br>(THERMAL RESPONSE) 1. Duty factor D = t / t1 2<br>a ttil a PLHUELELL 2. Peak T J = P DM x Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 10.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
**==> picture [427 x 476] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 VGS0Pe 100 Sea<br> TOP - 15V TOP - 15V<br> - 10V - 10V<br> - 8.0V - 8.0V<br> - 7.0V - 7.0V<br> - 6.0V - 5.5V tl 726i - 6.0V - 5.5V Ht<br> - 5.0V - 5.0V<br> BOTTOM - 4.5V | fe BOTTOM - 4.5V 1 "SS<br>GPR | fre |<br>10 Z -4.5V | 10 | GRE<br> -4.5V<br>O y men) ee<br>| Aff) | ey) ARSE lll<br>Uy | it ey Ae eel)<br> 20µs PULSE WIDTH<br>1 De _ | __errasemors T = 25°CJ A 1 VAe T = 150°CJ<br>0.1 1 10 100 0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS -V , Drain-to-Source Voltage (V)DS<br>Fig 11. Typical Output Characteristics Fig 12. Typical Output Characteristics<br>100 SS SS 100 SSS = SS<br>Pp ee EE<br>T = 25°CJ<br>ee es ee ee es<br>T = 150°CJ<br>10<br>Sanp?-.eeenn |__| fg<br>T = 150°CJ<br>10 A TL<br>=== |) a=<br>| === ee en 4 T = 25°CJ<br>Oe | | {| [| ~ Jf fT Tf [yf 1<br>ees eee ee ee ee Seen 4<br>Pit eT EE r+ fffff<br> V = -15VDS<br>1 PULSE WIDTHI A 0.1 Tt | PEPE Tt dv cod<br>4 PP 5 6 7 20seed 8 9 10 = LE 0.0 0.3 0.6 0.9 P 1.2 Ee 1.5<br>-V , Gate-to-Source Voltage (V)GS -V , Source-to-Drain Voltage (V)SD<br>D D<br>-I , Drain-to-Source Current (A) -I , Drain-to-Source Current (A)<br>SD<br>-I , Reverse Drain Current (A)<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 13.** Typical Transfer Characteristics
**Fig 14.** Typical Source-Drain Diode Forward Voltage
## www.irf.com
6
**==> picture [434 x 197] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 0.50<br>nl ©=6=-3.0A\<br>PR R LPT] ~ BREE<br>0.40<br>1.5<br>PEPE ETE STC<br>PE pe<br>0.30<br>1.0 VGS = -4.5V<br>nn pea eer FCEEC EL LA<br>0.20<br>eT a PO ET OEE<br>0.5 TEE pe ff VGS = -10V pene<br>EEE EEE EL. St<br>0.10<br>PTT eS ee<br>0.0 PEE EEE EEE. A 0.00 PCE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14<br>T , Junction Temperature (°C)J -I , Drain Current (A)D<br>Ω<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>DS (on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 15.** Normalized On-Resistance Vs. Temperature
**==> picture [184 x 21] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig 16. Typical On-Resistance Vs. Drain<br>Current<br>**----- End of picture text -----**<br>
**==> picture [210 x 195] intentionally omitted <==**
**----- Start of picture text -----**<br>
> 0.16 FPLEELLLL<br>0.14 eeILE<br>rT<br>ee<br>0.12 ee a<br>0.10 PTT NEEL<br>ID = -4.3A<br>T N<br>0.08 P EN<br>ee<br>ee<br>0.06<br>0 4 8 12 16<br>-V , Gate-to-Source Voltage (V)GS<br>Ω<br>DS (on)<br>R , Drain-to-Source On Resistanc<br>**----- End of picture text -----**<br>
**Fig 17.** Typical On-Resistance Vs. Gate Voltage
www.irf.com
7
**==> picture [434 x 478] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 20<br>V = 0V, f = 1MHzGS I = -3.0AD<br>C = C + C , C SHORTEDiss gs gd ds V = -24VDS<br>C = Crss gd<br>800 | Pf a C = C + Coss ds gd 16 Sp<br>600 12<br>OrsEN s cep ee Pot Sei e e e eee<br>LY<br>ss<br>400 8<br>ww os /<br>200 s 4<br>lll pe ee >yore ae FOR TEST CIRCUIT<br> SEE FIGURE 22<br>0 eli A 0 pot | | | i| tt i |<br>1 10 100 0 5 10 15 20 25<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 18. Typical Capacitance Vs. Fig 19. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>D = 0.50<br>P E ee<br>ST erm<br> 10 0.20<br>0.10<br>0.05<br>S ee Te<br>sae<br>PDM<br>0.02<br> 1<br>0.01 t1<br>t2<br>a. a ee ee ee<br>Notes:<br>SINGLE PULSE<br>(THERMAL RESPONSE) 1. Duty factor D = t / t1 2<br>a gaitt a PUUUFILL 2. Peak T J = P DM x Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 20.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
8
## SO-8 Package Outline
Dimensions are shown in milimeters (inches)
**==> picture [296 x 270] intentionally omitted <==**
**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A _ 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>===> b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>arr 0 6 H HS D .189 .1968 4.80 5.00<br>E 0.25 [.010] A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050 BASIC 1.27 BASIC<br>e1 .025 BASIC 0.635 BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X 4 e b SST L .016 .050 0.40 1.27<br>++} y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>Sane sic 8X b A1 , ( f 8X L —4 8X c<br>0.25 [.010] C A B 7<br>FOOTPRINT<br>NOTES:<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER ieee<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>: F Ho0d<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>O MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. an<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br> A SUBSTRATE.<br>3X 1.27 [.050] tne 8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
## DATE CODE (YWW)
P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW = WEEK INTERNATIONAL F7101 A = ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO ~~ee~~
PART NUMBER
www.irf.com
9
## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
**==> picture [173 x 113] intentionally omitted <==**
**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>soos) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**==> picture [154 x 68] intentionally omitted <==**
**----- Start of picture text -----**<br>
330.00<br>(12.992)<br> MAX.<br>VAY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04
www.irf.com
10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →