IRF7351TRPBF

## IRF7351PbF 

## HEXFET Power MOSFET 

## **Applications** 

Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power Motor Drive Systems 

## **VDSS RDS(on) max Qg (typ.) 60V 17.8m** Ω **@VGS = 10V 24nC** 

## **Benefits** 

Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS  Max. Gate Rating 

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S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~a~~|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~a~~<br>~~Cee~~|Drain-to-Source Voltage<br>~~a~~|60|V|
|VGS<br>~~Cee~~|Gate-to-Source Voltage<br>~~a~~|± 20||
|ID@ TA= 25°C<br>~~Cee~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~ee~~|8.0<br>~~i~~|A<br>~~i~~|
|ID@ TA= 70°C<br>~~—~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~|6.4<br>~~i~~||
|IDM<br>~~—~~|Pulsed Drain Current<br>~~ee~~|64<br>~~i~~||
|PD@TA= 25°C|Power Dissipation<br>~~ee~~|2.0<br>~~i~~|W<br>~~i~~|
|PD@TA= 70°C|Power Dissipation|1.28||
|~~a~~<br>~~ee~~|Linear Derating Factor<br>~~ee~~|0.016<br>~~ee~~|W/°C<br>~~ee~~|
|TJ<br>TSTG<br>~~a~~<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 150<br>~~ee~~|°C<br>~~ee~~|



## **Thermal Resistance** 

|~~a~~|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJL|Junction-to-Drain Lead|–––|20|°C/W|
|RθJA<br>~~a~~|Junction-to-Ambient|–––|62.5||



> Notes ® through © are on page 10 

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11/18/09 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~a~~|**Parameter**<br>~~i~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~<br>~~GOO~~|**Max. **<br>~~OD~~<br>~~GOO~~|**Units**<br>~~OO~~<br>~~GOGO~~|**Conditions**<br>~~GOGO~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~<br>~~GO~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~i~~<br>~~GO~~<br>~~GO~~|60<br>~~GO~~<br>~~GO~~<br>~~GO~~|–––<br>~~GO ~~<br>~~GO~~<br>~~GOO~~<br>~~GO~~|–––<br> ~~OD ~~<br>~~GO~~<br>~~GOO~~<br>~~GO~~|V<br> ~~OO~~<br>~~GO~~<br>~~GOGO~~<br>~~GO GO~~|VGS= 0V, ID= 250µA<br>~~GO~~<br>~~GOGO~~<br>~~GO~~|
|∆ΒVDSS/∆TJ<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~GO~~|–––<br>~~GO~~|0.068<br>~~GOO~~<br>~~GO~~|–––<br>~~GOO~~<br>~~GO~~|V/°C<br>~~GOGO~~<br>~~GO GO~~|Reference to 25°C, ID= 1mA<br>~~GOGO~~<br>~~GO~~|
|RDS(on)<br>~~a~~<br>~~Ef~~|Static Drain-to-Source On-Resistance<br>~~GO~~<br>~~Ef~~|–––<br>~~GO~~<br>~~Ef~~|13.7<br>~~GOO~~<br>~~GO~~<br>~~Ef~~|17.8<br>~~GOO ~~<br>~~GO~~<br>~~Ef~~|mΩ<br> ~~GOGO~~<br>~~GO GO~~<br>~~Ef~~|VGS= 10V, ID= 8.0A<br>~~GOGO~~<br>~~GO~~<br>~~Ef~~|
|VGS(th)<br>~~ff~~|Gate Threshold Voltage<br>~~ff~~|2.0<br>~~ff~~|–––<br>~~ff~~|4.0<br>~~ff~~|V<br>~~ff~~|VDS= VGS, ID= 50µA<br>~~ff~~<br>~~EE~~|
|∆VGS(th)<br>~~ff~~<br>~~GO~~|Gate Threshold Voltage Coefficient<br>~~ff~~<br>~~GO~~|–––<br>~~ff~~<br>~~GO~~|-8.2<br>~~ff~~<br>~~GO~~<br>~~EE~~|–––<br>~~ff~~<br>~~GO~~<br>~~EE~~|mV/°C<br>~~ff~~<br>~~GO~~<br>~~EE~~||
|IDSS<br>~~Ee~~<br>~~PS~~<br>~~__~~|Drain-to-Source Leakage Current<br>~~Ee~~<br>~~__~~|–––<br>~~Ee~~|–––<br>~~Ee~~<br>~~EE~~|20<br>~~Ee~~<br>~~EE~~|µA<br>~~Ee~~<br>~~EE~~<br><br>|VDS= 60V, VGS= 0V<br>~~Ee~~<br>~~EE~~|
|||–––<br>~~Ee~~<br>~~PTT~~<br>|–––<br>~~Ee~~<br>~~EE~~<br>~~PTT~~<br>|250<br>~~Ee~~<br>~~EE~~<br>~~PTT~~<br>||VDS= 60V, VGS= 0V, TJ= 125°C<br>~~Ee~~<br>~~EE~~<br>~~pO~~<br>|
|IGSS<br>~~PS~~<br>~~__~~<br>~~a~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~__OF~~<br>~~a~~|–––<br>~~PTT~~<br>~~OF~~|–––<br>~~EE~~<br>~~PTT~~<br>~~OF~~|100<br>~~EE~~<br>~~PTT~~<br>~~OF~~|nA<br>~~EE~~<br><br>~~OF~~<br>~~GO G~~|VGS= 20V<br>~~EE~~<br>~~pO~~<br>~~OF~~<br>~~p~~~~**O**~~|
||Gate-to-Source Reverse Leakage<br>~~__OF~~<br>~~a~~<br>~~GO~~|–––<br>~~PTT~~<br>~~OF~~<br>~~GO~~|–––<br>~~PTT~~<br>~~OF~~<br>~~GO~~|-100<br>~~PTT~~<br>~~OF~~<br>~~GO~~||VGS= -20V<br>~~pO~~<br>~~OF~~<br>~~p~~~~**O**~~<br>~~G~~|
|gfs<br>~~PS~~<br>~~__~~<br>~~a~~<br>~~a~~|Forward Transconductance<br>~~__~~<br>~~a~~<br>~~GO~~|18<br>~~PTT~~<br><br>~~GO~~|–––<br>~~PTT~~<br><br>~~GO~~|–––<br>~~PTT ~~<br><br>~~GO~~|S<br> <br><br>~~GO G~~|VDS= 25V, ID= 6.4A<br> ~~pO~~<br><br>~~p~~~~**O**~~<br>~~G~~|
|Qg<br>~~a~~<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~a~~<br>~~GO~~|–––<br>~~GO~~|24<br>~~GO~~|36<br>~~GO~~|nC<br>~~GO G~~<br><br>~~GOGO~~|See Fig. 17<br>ID= 6.4A<br>VGS= 10V<br>VDS= 30V<br>~~p~~~~**O**~~<br>~~G~~<br><br>~~GOGO~~|
|Qgs1<br>~~ee~~|Pre-Vth Gate-to-Source Charge|–––|3.8|–––|||
|Qgs2<br>~~ee~~<br>~~ee~~|Post-Vth Gate-to-Source Charge|–––|1.2|–––|||
|Qgd<br>~~ee~~|Gate-to-Drain Charge|–––|7.2|–––|||
|Qgodr<br>~~ee~~<br>~~ee~~|Gate Charge Overdrive<br>|–––<br>|11.8<br>|–––<br>|||
|Qsw<br>~~ee~~<br>~~ee~~|Switch Charge (Qgs2+ Qgd)<br>|–––<br>|8.4<br><br>~~GOO~~|–––<br><br>~~GOO~~|||
|Qoss<br>~~eeGO~~<br>~~ee~~|Output Charge<br>~~GO~~|–––<br>~~GO~~|7.5<br>~~GO~~<br>~~GOO~~|–––<br>~~GO~~<br>~~GOO~~|nC<br>~~GO~~<br>~~GOGO~~|VDS= 16V, VGS= 0V<br>~~GO~~<br>~~GOGO~~|
|td(on)<br>~~ee~~<br>~~es~~|Turn-On DelayTime|–––|5.1<br>~~GOO~~|–––<br>~~GOO~~|ns<br> ~~GOGO~~|RG= 1.8Ω<br>VDD= 30V, VGS= 10V<br>ID= 6.4A<br>~~GOGO~~<br>®|
|tr<br>~~ee~~<br>~~es~~<br>~~es~~|Rise Time|–––|5.9<br>~~GOO~~|–––<br>~~GOO ~~|||
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime|–––|17|–––|||
|tf<br>~~es~~<br>~~es~~<br>~~es~~|Fall Time|–––|6.7|–––|||
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance|–––|1330|–––|pF<br>|VGS= 0V<br>VDS= 30V<br>ƒ= 1.0MHz<br>|
|Coss<br>~~es~~<br>~~es~~<br>~~a~~|Output Capacitance<br>|–––<br>|190<br>|–––<br>|||
|Crss<br>~~es~~<br>~~a~~|Reverse Transfer Capacitance<br>|–––<br>|92<br>|–––<br>|||



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100 100<br>VGS VGS<br>TOP           10V TOP           10V<br>8.0V 8.0V<br>6.0V 6.0V<br>| V4 5.0V Yo 5.0V<br>4.5V 4.5V<br>4.3V 4.3V<br>10 4.0V 4.0V<br>BOTTOM 3.8V BOTTOM 3.8V<br>10<br>1<br>≤ 60µs PULSE WIDTH 3.8V<br>Tj = 25°C<br>≤ 60µs PULSE WIDTH<br>3.8V Tj = 150°C<br>0.1 A e tAe o)  ANae 1 ‘ i ai a a<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 2.0<br>ID = 8.0A<br>es a a, Ga 1.8 VGS = 10V<br>10 1.5<br>| | t tt<br>TJ = 25°C<br>1.3<br>e e a B RRRREDZ AEE<br>TJ = 150°C<br>1 1.0<br>ee ee ee | eee<br>0.8<br>ee oe VDS = 25V AO<br>≤ 60µs PULSE WIDTH<br>F e!<br>0.1 | 0.5 R EE<br>2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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100000 14.0<br>VCGS  iss    = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= 6.4A<br>10000 T|) CCrss  oss   = C= Cds gd + Cgd 12.010.0 Po VVDSDS= 48V= 30V E<br>VDS= 12V<br>S ee ee o eee G f//<br>Ciss tT 8.0 W<br>1000<br>Coss 6.0<br>Crss<br>P oe 4.0 P L<br>100 e ee eel P /F}<br>n d 2.0 tf fo<br>ee A GREE<br>10 0.0<br>1 10 100 0 5 10 15 20 25 30 35<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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100 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>a TJ = 150°C r ) ay<br>10 100µsec<br>10<br>P| A | AR 10msec E 1msec S<br>TJ = 25°C<br>1<br>A a s DC<br>1<br>E AS) TA = 25°C e a e<br>VGS = 0V Tj = 150°CSingle Pulse<br>0.1 rn ae 0.1 ue.<br>Pp ft Nts CEC<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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8 3.5<br>76 P F o|N. 3.0 aN<br>5 P ot IN T INGE<br>4 P | IN 2.5 P f ID = 50µA Na<br>3<br>2 2.0<br>a N e pee<br>1<br>0 | tf | | ft 1.5 Ft tt tL EL ELS\<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>100<br>= D = 0.50 POL Ton<br>0.20<br>10<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1 R 1 R 1 R2 R2 R 3 R3 R4R4 Ri (°C/W)     τ i (sec)<br>E r ae in τ J τ an J ean τ A τ A 3.6777     0.009926<br>0.01 H i lo τ 1 τ 1 e e τ 2 τ 2 e een τ 3 τ 3 eee τ 4 τ 4 21.765     25.2402925.683     3.723179 ill<br>Ci=  τ i / Ri<br>Ci=  τ i / Ri 11.374     0.348001<br>0.001<br>SINGLE PULSE<br>( THERMAL RESPONSE )<br>0.0001 a cou ale EPTFE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z  thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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50 1400<br>ID = 8.0A ID<br>1200 TOP         0.53A<br>40 eit,| ) M EE 0.79A<br>1000 BOTTOM 6.4A<br>30<br>800<br>TJ = 125°C<br>20 PN 600 O e<br>400<br>10 NEE TJ = 25°C B AO<br>200<br>0 Pt|[=|} 0 R OASTSS<br>0 5 10 15 20 25 50 75 100 125 150<br>VGS, Gate -to -Source Voltage  (V) Starting TJ , Junction Temperature (°C)<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

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15V<br>VDS L DRIVER<br>7<br>RG D.U.T +<br>- [V][DD]<br>20VVGS IAS<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>: tp<br>IAS<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 15a.   Switching Time Test Circuit<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 15a.** Switching Time Test Circuit 

**Fig 15b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>Period D =<br>+ P.W. Period<br>D.U.T <—— | ——_— —_— | t<br>VGS=10V<br>) ®    •  Circuit Layout Considerations |<br>| | -  •   GroundLow StrayPlane Inductance<br> •   Low Leakage Inductance Oo) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [l] Current Transformer - ® + Current r Current di/dt NN<br>00 ® D.U.T. VDS Waveform Diode Recovery y<br>dv/dt ‘ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vpp - Inductor Curent<br>•<br>D.U.T. - Device Under Test es<br>Isp controlled by Duty Factor "D" @® Ripple  ≤ 5% ISD<br>* Veg = 5V for Logic Level Devices<br>Fig 16. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>Id<br>Current Regulator Vds<br>po------------4R Same Type as D.U.T. {<br>|<br>|| ° | f Vgs<br>| 50K Ω | I!<br>I 12V .2 µ F | 1 \<br>| .3 µ F<br>—Ett +<br>D.U.T. -VDS<br>Vgs(th)<br>VGS<br>!<br>3mA TI !<br>IG ID<br>Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

## **Fig 17b.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

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P  = P + P + P + P<br>loss conduction switching drive output<br>**----- End of picture text -----**<br>


This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## **SO-8 Part Marking Information** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **SO-8 Tape and Reel** 

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TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) —— — FEED DIRECTION<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Notes: ®@ Repetitive rating;  pulse width limited by When mounted on 1 inch square copper board. max. junction temperature.[R] θ is measured at T, approximately 90°C. 0 Starting TJ = 25°C, L = 16mH[®] RG = 25 Ω , IAS = 6.4A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/09 

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