IRF7343TRPBF

Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: Dual MOSFETs
Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: Complementary N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: SOIC
Operating Temperature Max: 150°C
Power Dissipation N Channel: 2W
Power Dissipation P Channel: 2W
Drain Source Voltage Vds N Channel: 55V
Drain Source Voltage Vds P Channel: 55V
Continuous Drain Current Id N Channel: 4.7A
Continuous Drain Current Id P Channel: 4.7A
Drain Source On State Resistance N Channel: 0.043ohm
Drain Source On State Resistance P Channel: 0.043ohm

Delivery and price
Units per pack	5000
Price	0.298 €
Current stock	1000+
Lead time	30 days

Datasheet

PD - 92547 

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N-CHANNEL MOSFET<br>S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2 Voss} 55V_ | -55V<br>G2 4 5 D2<br>P-CHANNEL MOSFET Rosjon)| 0-050 Ω | 0.105 Ω<br>Top View<br>x PU ><br>val °<br>.<br>SO-8<br>**----- End of picture text -----**<br>


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∆ ∆<br>Verypss_ Ty |Breakdown Voltage Temp. Coefficient Noh = goed VC | Reference c ane 7 = ima<br>R DS(ON) Staticatic: Drain-to-SDrain-to-Source. On-R'On-Resistance: t Nechesoch *| —— [0.056/0.065|[0.0950.105bes Ω Ves Vas = =  -10V.Ip=-3.4A 10V,4.5V, IpIp = = 4.7A3.8A ® ® @<br>| — |0.150|0.170 Ves = -4.5V, Ip = -2.7A ®<br>(N-Ch/<br>Mesa 7.0 — | — |) | Vos=Ves, Ip = 250uA<br>Ofs _[Sate Threshold vowsae |.N-Ch]“P-ch/-1.0)7.9 | —— || —— || V_[Vos=Ves.loVps = 10V, Ip =  -24. 5 0uAA ®<br>Forward Transconductance iP-chi331— 1 — | Ss Vos = -10V. [p= -3.1A<br>|.N-ch| — | — | 20 | Vos = 55V, Vas = OV<br>lpss into. | P-Ch| — | — | -2.00 | Vos = -55V, Ves = OV<br>Drain-to-Source Leakage Current iN-chi —| — | 5 uA Vos = 55V. Veg = OV. T) = 55°C<br>|P-Ch|— | — | -25 Vos = -55V, Ves = OV, Ty = 55°C<br>oe To alGa t e-to-Source Gate Charge Forward Leakage |Hecht N-P | —= |  —Bh[+100] nA38  | Vog=+20VN-Channel<br>Gate-to-Drain ("Miller") Charge Sep 70/10,FO | P-Channe!Ip = -3.1A, Vpg = -44V, Veg = -10V<br>Ω,<br>|N-Ch| — | 3.2 | 4.8 | Von = 28V, Ω  I= 1.08, Re = 6.0<br>ta(ott) |N-Ch] — | 32 | 48 |<br>Turn-Offretin Delay Time ‘P-chCN-Ch)—— [13| 43 || 20)64 | $007P-Channel -28V. Ω  n= -1.0A, Ro = 6.0 Ω<br>**----- End of picture text -----**<br>


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≤   ≤<br>max. junction temperature. ( See fig. 22 )<br>N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/us, Vop ≤ Vierypss: Ty ≤ 150°C ® Surface mounted on FR-4 board, t ≤<br>P-Channel ISD ≤ -3.4A, di/dt ≤ -1 SOA/US, Vop ≤ Ver)Dss: Ty ≤ 150°C<br>N-Channel Starting Ty = 25°C, L=6.5mMH Rg=25_ Ω , Ing=4.7A.<br>P-Channel Starting Ty = 25°C, L= 20mMH Rg = 25, Ω Ing=-3.4A.<br>**----- End of picture text -----**<br>


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 100  100<br>VGS VGS<br>TOP 15V ch TOP 15V otee<br>12V 12V<br>10V HE Et 10V HE EH EH<br>8.0V 1 | 8.0V 10<br>4.0V 4.0V<br>3.5V 3.5V<br>BOTTOM 3.0V eel BOTTOM 3.0V A ey 72<br>), gaan Wo<br> 10 BE) y  10 UY aailil<br>a e/aZornes ee ee Bl) y, YT Wa All<br>3.0V<br>3.0V<br> //4740 ee ee | | YTTT<br>Uy 7 | YYGAN | TAM FT<br> 1 y4a t 20µs PULSE WIDTHT  = 25J °C  1 yMjai l 20µs PULSE WIDTHT  = 150J li °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br> 100 rr  100 ——<br>[- | | }—_J a<br>T  = 25  CJ °<br>Ppmn Seer- T  = 150  CJ °  10 Sna T  = 150  CJ  nn ° ee445<br>Oa —— _—<br> 10 7 |  Se T  = 25  CJ °<br>——————— ey Ay A<br>Sr ee ee ee ee eee<br> 1<br>a ee ee -——— — f — FY<br>V      = 25VDS<br>20µs PULSE WIDTH V      = 0 V GS<br> 1 0.1<br>3 4 5 6 0.2 0.5 0.8 1.1 1.4<br>V     , Gate-to-Source Voltage (V)GS V     ,Source-to-Drain Voltage (V)SD<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>I   ,  Drain-to-Source Current (A)D I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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2.5 0.120<br>ID = 4.7A<br>P G<br>0 8 ee<br>2.0<br>PEEP PP<br>0.100<br>HU EU ER GRRRREREDEREREDS<br>1.5 TTPEELE EETA 0.080 PiPt fttL| TEtt delLy<br>1.0 Pee B an VGS = 4.5V n<br>Pe 4<br>0.060<br>0.5 EEE T {i [1] P<br>VGS = 10V<br>eee f ee<br>VGS = 10V<br>0.0 CE E 0.040 |} {| | |} |<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40<br>T  , Junction TemperatureJ (  C)° I    , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.12 200<br>ID<br>Pf pp pf TOP 2.1A<br>3.8A<br>160 BOTTOM 4.7A<br>e 0.10 | | [| | | | |_|<br>eer ON<br>: | 120 P N<br>e 0.08 ft ttt<br>s ty ft 80 TNC<br>a 1 | VE yf SENSES<br>0.06 ee NAL Nf<br>40<br>PN ET ] EPS<br>§ | P|SSN><br>e 0.04 | | | mek A 0 PL SSS<br>0 2 4 6 8 10 25 50 75 100 125 150<br>V       , Gate-to-Source Voltage (V)GS  Starting T  , Junction TemperatureJ (  C)°<br> ( Ω )<br>Ω<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance DS (on)<br>R            , Drain-to-Source On Resistance<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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1200 VGS = 0V, f = 1MHz 20 ID = 4.5A<br>1000 —Nt CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 16 |tr| VVVDSDSDS === 48V 30V 12V ||ST|<br>800 Ciss<br>S r ot 12 a fi<br>CO), SS P| tT | | ge<br>600<br>S c t EEA<br>IN 8 ,<br>400<br>P| NAT TT TA TTT<br>Coss<br>ee e e 4 TT GAT TTT<br>200 P SALT TTT all Wa<br>Crss<br>a e l | | tt<br>0 PT TT 4 LI 0 AEE<br> 1  10  100 0 10 20 30 40<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>P D = 0.50 rto——err ol<br>0.20<br> 10<br>0.10<br>= ee<br>0.05<br>ncn en So - —co<br>p 0.02 e dy FTA FY PDM<br> 1 0.01<br>oo etree TANI t1<br>SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>e eee ee 1. Duty factor D =Notes: t   / t1 2<br>e e 2. Peak T J= P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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 100<br>VGS<br>TOP -15V<br>-12V<br>-10V<br>-8.0V TTT]<br>-4.0V<br>-3.5V 17720<br>BOTTOM -3.0V<br> 10<br>byeYt jy | a n in<br>-3.0V<br> 1<br>20µs PULSE WIDTH<br>T  = 25J °C<br>0.1 n i<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 100 ———<br>a<br>ee<br>PE T  = 25  CJ Ty ° pepe<br>T  = 150  CJ °<br>| SSF<br> 10<br>SS ee<br>na<br>| wl ee| | eeeif; { | |<br>yA<br>V      = -25VDS<br>P |) 20µs PULSE WIDTH<br> 1<br>3 4 5 6 7<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 100<br>VGS<br>TOP -15V<br>-12V<br>-10V<br>-8.0V a a |<br>-4.0V<br>BOTTOM -3.5V-3.0V i a 7<br> 10<br>0:<br>> ee ee -3.0V  ee |<br> 1<br>20µs PULSE WIDTH<br>T  = 150J °C<br>0.1 Ati TE |<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 13. Typical Output Characteristics<br> 100<br>Saas aaaaaaa=<br>PT ee I<br>—4-+<br> 10 SEREEED2Caen++ aH<br>SSS T  = 150  CJ ° ae<br>BET SAREE T  = 25  CJ  SES °<br> 1 Saar araneean<br>PTSSS TIAL= 2 AISS SS aa<br>BEE RA S RRS EESE<br>0.1 |FLU| [| f f[Tet i E V      = 0 V GS<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>-V     ,Source-to-Drain Voltage (V)SD<br>D<br>-I   ,  Drain-to-Source Current (A)<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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2.0 0.240<br>ID = -3.4 A 7 PEELE EEL<br>1.5 0.200<br>e e PTTL TT Ee<br>PLA i VGS = -4.5V VA<br>He aa anni<br>1.0 0.160<br>0.5 0.120<br>arene = PERE<br>VGS = -10V<br>Ep p VGS = -10V PSECro]  eee[ |[Pp<br>0.0 0.080<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12<br>T  , Junction TemperatureJ (  C)° -I    , Drain Current (A)D<br>Fig 16. Normalized On-Resistance Fig 17. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.45 300<br>ID<br>TTT . ) TOP -1.5A<br>250 -2.7A<br>BOTTOM -3.4A<br>PP 0.35 Re<br>: A<br>200<br>PIV] B Ae<br>eV 2 0.25 | 150 EPi KET TT e tT<br>3 NENG<br>WY N<br>100<br>¢ nei ONIN<br>se 0.15 | N |<br>7 | 50 BAND<br>$ EEE]— RSSpt |SAN<br>Pe 0.05 LE || 0 nd<br>2 5 8 11 14 [A] 25 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>-V        , Gate-to-Source Voltage (V)GS<br> ( Ω )<br>Ω<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance DS (on)<br>R            , Drain-to-Source On Resistanc<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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1200 20<br>VGS = 0V, f = 1MHz ID = -3.1A<br>|| CCissrss == CCgsgd + Cgd , C      SHORTEDds P| VVDSDS ==-48V-30V mm<br>960 NU Coss = Cds + Cgd 16 pt VDS =-12V im<br>SS pt tT ye<br>Ciss<br>720 12<br>SNC H SSs = FSC|<br>480 8<br>SCS 4)<br>IN ral WA<br>iN Coss = EAA<br>240 4<br>Si Crss pe<br>l Al lme AEE[1<br>0 0<br> 1  10  100 0 10 20 30 40<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 20. Typical Capacitance Vs. Fig 21. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>P D = 0.50 C<br>0.20<br> 10 = e = aer——<br>0.10<br>0.05<br>Sea act mente =s casei eee ea<br>S 0.02 t TH PDM<br> 1 0.01<br>t1<br>= cee<br>SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>aeT ty [E] ee ee [E] eeL R Notes:<br>1. Duty factor D = t   / t1 2<br>a a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>} 6 eal — H === D .189 .1968 4.80 5.00<br>E 0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>Tr e =— H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>cH ee L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>_=o C y a<br>0.10 [.004]<br>coo 8X b A1 l [ - ify 8X L 8X c<br>0.25 [.010]  C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER aApee<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>:      MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. F aed<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>O      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. oan<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] L una 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR XXXX WW =  WEEK INTERNATIONAL F7101 A =  ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO ~~ee~~ 

PART NUMBER 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>eoss) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION ss<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>VAY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 

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Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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