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IRF7342TRPBF
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.4A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Volta
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 55V
- Drain Source Voltage Vds P Channel: 55V
- Continuous Drain Current Id N Channel: 3.4A
- Continuous Drain Current Id P Channel: 3.4A
- Drain Source On State Resistance N Channel: 0.095ohm
- Drain Source On State Resistance P Channel: 0.095ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.368 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
IRF7342PbF ~~—~~
## ~~Cinfineon~~
HEXFET[® ] Power MOSFET
- Generation V Technology
**==> picture [231 x 213] intentionally omitted <==**
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S1 1 8 D1 VDSS -55V<br>G1 2 7 D1<br>G2S2 34 65 D2D2 RDS(on) max. 0.105 <br>Top View ID -3.4A<br>=——<br>SO-8<br>IRF7342PbF<br>G D S<br>Gate Drain Source<br>ee<br>**----- End of picture text -----**<br>
- Ultra Low On-Resistance
- Dual P Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- Dynamic dv/dt Rating
- Fast Switching
- Lead-Free
## **Description**
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
|**Base part number**<br>~~fp~~|**Package Type**<br>~~fp~~|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF7342PbF<br>~~fp~~|SO-8<br>~~fp~~|Tape and Reel|4000|IRF7342PbF|
## **Absolute Maximum Ratings**
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRF7342PbF<br>SO-8<br>Tape and Reel<br>4000<br>IRF7342PbF<br>~~fp~~|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRF7342PbF<br>SO-8<br>Tape and Reel<br>4000<br>IRF7342PbF<br>~~fp~~|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRF7342PbF<br>SO-8<br>Tape and Reel<br>4000<br>IRF7342PbF<br>~~fp~~|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRF7342PbF<br>SO-8<br>Tape and Reel<br>4000<br>IRF7342PbF<br>~~fp~~|
|---|---|---|---|
|**Absolute Maximum Ratingsgss **||||
|**Symbol**|**Parameter**|**Max.**|**Units**|
|VDS|Drain-Source Voltage|-55|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ -10V|-3.4|A|
|ID @TA= 70°C|Continuous Drain Current,VGS @-10V|-2.7||
|IDM|Pulsed Drain Current|-27||
|PD@TA= 25°C<br>~~ee~~|Maximum Power Dissipation<br>~~ee~~|2.0<br>~~ee~~|W<br>~~ee~~|
|PD@TA= 70°C<br>~~ee~~|Maximum Power Dissipation<br>~~ee~~|1.3<br>~~ee~~||
|~~ee~~<br>~~a~~|Linear De ratingFactor<br>~~ee~~|0.016<br>~~ee~~<br>~~ee~~|mW°/C<br>~~ee~~<br>~~ee~~|
|VGS<br>~~ee~~<br>~~——————————~~<br>~~a~~|Gate-to-SourceVoltage<br>~~ee~~<br>~~——————————~~|± 20<br>~~ee~~<br>~~——————————~~<br>~~ee~~|V<br>~~ee~~<br>~~——————————~~<br>~~ee~~|
|VGSM<br>~~——————————~~<br>~~a~~|Gate-to-Source Voltage Single Pulse tp< 10µs<br>~~——————————~~|30<br>~~——————————~~<br>~~ee~~||
|EAS<br>~~——————————~~<br>~~a~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~——————————~~|114<br>~~——————————~~<br>~~ee~~|mJ<br>~~——————————~~<br>~~ee~~|
|dv/dt<br>~~——————————~~<br>~~a~~|Peak Diode Recoverydv/dt<br>~~——————————~~|5.0<br>~~——————————~~<br>~~ee~~|V/ns<br>~~——————————~~<br>~~ee~~|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range|-55 to + 150<br>~~ee~~|°C<br>~~ee~~|
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**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|~~a~~|**Parameter**|**Min.**|**Typ. Max. Units**|**. Max. Units**|**. Max. Units**|**. Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~rs ts~~|-55<br>~~ts~~|–––<br>~~ts~~|–––<br>~~ts~~|V<br>~~QO (~~|VGS =0V, ID = -250µA<br>~~(~~|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~rs ts~~|––– -0.054 –––<br>~~ts~~|––– -0.054 –––<br>~~ts~~|––– -0.054 –––<br>~~ts~~|V/°C Reference to 25°C<br>~~QO (~~|V/°C Reference to 25°C,ID= -1mA<br>~~(~~|
|RDS(on)<br>~~es~~<br>~~=~~|Static Drain-to-Source On-Resistance<br>~~rs ts~~<br>~~=~~|––– 0.095 0.105<br>~~ts ~~<br>~~=~~|––– 0.095 0.105<br> ~~ts~~<br>~~=~~|––– 0.095 0.105<br>~~ts ~~<br>~~=~~|––– 0.095 0.105<br><br>––– 0.150 0.170<br> ~~QO (~~<br>~~=~~<br>~~ee~~|VGS= -10V,ID= -3.4A<br>~~(~~<br>~~=~~|
|||––– 0.150 0.170<br>~~=~~|––– 0.150 0.170<br>~~=~~|––– 0.150 0.170<br>~~=~~<br>~~e~~||VGS= -4.5V,ID= -2.7A<br>~~=~~|
|VGS(th)<br>~~ee~~|Gate Threshold Voltage<br>~~ee~~|-1.0<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~<br>~~e~~|V<br>~~ee~~<br>~~ee~~|VDS= VGS,ID= -250µA<br>~~ee~~|
|gfs<br>~~ee~~|Forward Trans conductance<br>~~ee~~|3.3<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~<br>~~e~~|S<br>~~ee~~<br>~~ee~~|VDS = -10V, ID = -3.1A<br>~~ee~~|
|IDSS<br>~~a~~|Drain-to-Source Leakage Current<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|-2.0<br>~~e~~<br>~~a~~|µA<br>~~ee~~<br>~~a~~|VDS = -55V, VGS =0V<br>~~a~~|
|||–––<br>~~a~~|–––<br>~~a~~|-25<br>~~a~~||VDS = -55V,VGS =0V,TJ =55°C<br>~~a~~|
|IGSS<br>~~ee~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~|nA<br>~~ee~~<br>~~ee~~|VGS = -20V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~||VGS =20V<br>~~ee~~<br>~~ee~~|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|26<br>~~ee~~<br>~~ee~~<br>~~ee~~|38<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|ID= -3.1A<br>VDS= -44V<br>VGS= -10V, SeeFig.10 <br>~~ee~~<br>~~ee~~|
|g<br>Qgs<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|3.0<br>~~ee~~<br>~~ee~~|4.5<br>~~ee~~|||
|Qgd<br>~~ee~~|Gate-to-Drain (‘Miller’) Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|8.4<br>~~ee~~<br>~~ee~~|13<br>~~ee~~|||
|gd<br>td(on)<br>~~ee~~<br>~~————————~~|Turn-On Delay Time<br>~~ee~~<br>~~————————~~|–––<br>~~ee~~<br>~~ee~~<br>~~————————~~|14<br>~~ee~~<br>~~ee~~<br>~~————————~~|22<br>~~ee~~<br>~~————————~~|ns<br>~~ee~~|VDD= -28V<br>ID= -1.0A<br>RG= 6.0<br>RD= 16<br>~~ee~~|
|d(on)<br>tr<br>~~————————~~|Rise Time<br>~~————————~~|–––<br>~~————————~~|10<br>~~————————~~|15<br>~~————————~~|||
|td(off)|Turn-Off DelayTime|–––|43|64|||
|d(off)<br>tf|Fall Time|–––|22|32|||
|Ciss|Input Capacitance|–––|690|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz, SeeFig.9|
|Coss|Output Capacitance|–––|210|–––|||
|Crss|Reverse Transfer Capacitance|–––|86|–––|||
**Diode Characteristics** ~~ee~~ **Parameter** ~~I~~ **Min. Typ. Max. Units Conditions** Continuous Source Current MOSFET symbol IS (Body Diode) ––– ––– -2.0 showing the A Pulsed Source Current integral reverse ~~|~~ ISM (Body Diode) ––– ––– -27 p-n junction diode. ~~a~~ VSD ~~ee~~ Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C,IS = -2.0A,VGS = 0V trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C ,IF = -2.0A, ~~ee~~ Qrr Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs **Notes:** Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
- Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8)
- ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C.
- Pulse width 300µs; duty cycle 2%.
- When mounted on 1" square copper board , t 10sec.
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100<br>VGS<br>TOP -15V<br>-12V<br>-10V a<br>--6.0V8.0V a<br>-4.0V<br>-3.5V<br>BOTTOM -3.0V HTzall<br> 10<br>Or<br>ne7<br>eer<br>A<br>YO -3.0V<br> 1<br>simiel<br>PZ rn<br>20µs PULSE WIDTH<br>nin T = 25J °C<br>0.1<br>0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 1** Typical Output Characteristics
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100 ————— SS<br>aee<br>ee<br>| | T = 25 CJ en ° | | ee a|<br>esa °<br>T = 150 CJ<br>5 |<br> 10 So<br>a ee”eee ee eee eee eee<br>t—|ey 7ee es ee ee ee ee<br>| A_|2 ee| ee{| ee| {|ee| ee<br>V = -25VDS<br>20µs PULSE WIDTH<br> 1<br>3 4 5 6 7<br>-V , Gate-to-Source Voltage (V)GS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 3** Typical Transfer Characteristics
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100<br>VGS<br>TOP -15V<br>-12V<br>-10V<br>-8.0V HEH<br>-6.0V -4.0V all<br>-3.5V<br>BOTTOM -3.0V<br> 10 il| ge—} IIT<br>$1oo<br>eo<br>ereC<br>jer Et<br>-3.0V<br>V Amaumnllll<br> 1<br>Uia<br>Yo Te Td<br>20µs PULSE WIDTH<br>T = 150J °C<br>0.1 ail<br>0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig. 2** Typical Output Characteristics
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100<br>== SS SS eS<br>a a a eeee<br>| | | tt | tf | fy<br> 10 Pi | |Ear<br>————rl<br>;-—-—} T = 150 CJ + ° 4 tt HI<br>y | A A<br>p {| | | Yi Yi T = 25 CJ tt ° | ft |<br> 1 -— -—|—_} [+][$F] ff [7]] + — fFff +}—— ——+— — — —~F<br>PEu/TTe V = 0 V GS<br>0.1 T | T<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>-V ,Source-to-Drain Voltage (V)SD<br>SD<br>-I , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig. 4** Typical Source-Drain Diode Forward Voltage
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2.0<br>ID = -3.4 A<br>ae LEE<br>1.5<br>EEE LL<br>EEE Pett<br>1.0<br>PU ett<br>aTTUE<br>0.5<br>ETE<br>VGS = -10V<br>0.0<br>-60 ee -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction TemperatureJ ( C)°<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 5.** Normalized On-Resistance Vs. Temperature
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0.45<br>0.35<br>0.25<br> I = -3.4 A D<br>0.15<br>0.05<br>2 5 8 11 14 [A]<br>-V , Gate-to-Source Voltage (V)GS<br>**----- End of picture text -----**<br>
**Fig. 7** Typical On-Resistance Vs. Gate Voltage
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0.240<br>LTE TELE<br>0.200<br>te<br>VGS = -4.5V<br>La<br>0.160<br>Lb AT|<br>eet<br>TT yt TT EE<br>0.120 | | tt<br>VGS = -10V<br>SEER RRRa eee<br>0.080<br>0 P 2 eer 4 6 8 y 10 12<br>-I , Drain Current (A)D<br>DS (on)<br>R , Drain-to-Source On Resistance<br><br>**----- End of picture text -----**<br>
**Fig 6.** Typical On-Resistance Vs. Drain Current
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300<br>ID<br>a a<br>TOP -1.5A<br>250 -2.7A<br>BOTTOM -3.4A<br>Ht<br>A ee<br>200<br>|ee\fee| ee ee<br>150<br>ee Ne ee ee ee<br>KN TA |<br>100<br>KAT \P<br>| NAUK TT<br>50 SSN<br>KA<br>| | UA ee<br>POE<br>0<br>25 50 75 100 125 150<br>Starting T , Junction TemperatureJ ( C)°<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 8.** Maximum Avalanche Energy
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1200 20<br>VGS = 0V, f = 1MHz ID = -3.1A<br>960 T CC Ciss rss oss == = CC Cgs gd ds + C + Cgd ,gd C SHORTED ds 16 rene VVV DS DS DS ===--30V-12V48V<br>NnNN HEEa ER<br>Ciss<br>720 12<br>Nene Y<br>NCCE aTT4<br>480 NI 8 A<br>Coss<br>240 SPSTPSO, SCOT 4 7TV oe<br>Crss<br>0 PostCr SaSEEt 0 Va(Aea<br> 1 10 100 0 10 20 30 40<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 9.** Typical Capacitance Vs. Drain-to-Source Voltage
**Fig 10.** Typical Gate Charge Vs. Gate-to-Source Voltage
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100<br>D = 0.50 SiH Sas a =<br>0.20<br> 10<br>0.10<br>eeeer<br>0.05<br>0.02 PDM<br> 1 0.01<br>t1<br>SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>eT al<br>Notes:<br>1. Duty factor D = t / t 1 2<br>2. Peak TJ= P DM x ZthJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig. 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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## **SO-8 Package Outline** (Dimensions are shown in millimeters (inches)
**==> picture [428 x 209] intentionally omitted <==**
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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>_ aee<br>A 5 | ee A .0532 .0688 ee 1.35 ee 1.75<br>ee A1 .0040 .0098 0.10 0.25<br>I E 6 | 81 72 63 45 0.25 [.010] H A eees>)es cbDE .0075.013.189.1497 .0098.020.1968.1574 ee 0.190.334.803.80 ee— 0.250.515.004.00 J<br>| > e .050 BASIC 1.27 BASIC<br>e 1 .025 BASIC 0.635 BASIC<br>= | ee<br>es H .2284 .2440 5.80 6.20<br>6X e Jk es K .0099 .0196 0.25 0.50<br>es L .016 .050 0.40 1.27<br>-> y 0° 8° ee 0° eeJ 8°<br>e1 K x 45°<br>A<br>A C<br>y<br>s t all 0.10 [.004] = n ,<br>8X b A1 8X L 8X c<br>0.25 [.010] C A B 7<br>**----- End of picture text -----**<br>
**==> picture [385 x 86] intentionally omitted <==**
**----- Start of picture text -----**<br>
N O T E S : F O O T P R I N T<br>1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 8 X 0 . 7 2 [ . 0 2 8 ]<br>2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R<br>3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .<br>4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .<br>' food<br>5 M | D I MO LEDN PS RI OONT DR UO SE I OS NN SO NT I NO TC TL OU ED EX MC EOELDD 0 P. 1R5O [T. 0R0U6 S] .I O N S . 6 . 4 6 [ . 2 5 5 ]<br>6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .<br> M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .<br>7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O<br> A S U B S T R A T E . , OJOOUUO }<br>3 X 1 . 2 7 [ . 0 5 0 ] 8 X 1 . 7 8 [ . 0 7 0 ]<br>**----- End of picture text -----**<br>
## **SO-8 Part Marking Information**
E X A M P L E : TH IS IS A N IR F 7 1 0 1 (M O S F E T)
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**----- Start of picture text -----**<br>
D A T E C O D E (YW W )<br>P = D E S IG N A TE S L E A D -F R E E<br>HA A P R O D U C T (O P TIO N A L )<br>Y = L A S T D IG IT O F TH E YE A R<br>X X X X W W = W E E K<br>IN TE R N A TIO N A L F 7 1 0 1 A = A S S E M B L Y S ITE C O D E<br>“pe r<br>R E C TIF IE R<br>L O T C O D E<br>L O G O THEE<br>P A R T N U M B E R<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
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**SO-8 Tape and Reel** (Dimensions are shown in millimeters (inches)
## TERMINAL NUMBER 1
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12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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**----- Start of picture text -----**<br>
330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
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## **Qualification Information[† ]**
|**Qualification Information[† ]**||
|---|---|
|**Qualification Level**||
|**Moisture Sensitivity Level**|SO-8|
|**RoHS Compliant**||
Consumer MSL1 (per JEDEC J-STD-020D)[††] Yes
- Qualification standards can be found at Infineon’s web site www.infneon.com
- †† Applicable version of JEDEC standard at the time of product release.
## **Revision History**
|**Date**|||**Comments**|
|---|---|---|---|
|05/26/2016||Updated datasheet with corporate template||
|||Added disclaimer on lastpage.||
## **Trademarks of Infineon Technologies AG**
µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™, OptiMOs™, ORIGA™, PowlRaudio™, PowlRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
## **Other Trademarks**
|**Published by**<br>**Infineon Technologies AG**<br>Edition 2016-04-19|**IMPORTANT NOTICE**<br>;<br>;<br>;<br>,<br>;<br>,<br>The information given in thisdocument shall in no<br>event be regarded as a guarantee of conditions or<br>characteristics (“Beschaffenheitsgarantie”) .|contact your nearest Infineon Technologies office<br>(www.infineon.com).<br>For further information on the product, technology,<br>delivery terms and conditions and prices please|
|---|---|---|
|**81726 Munich, Germany**|||
|**© 2016 Infineon Technologies AG.**<br>**All Rights Reserved.**|With respect to any examples, hints or any typical<br>Technologies<br>hereby<br>disclaims<br>any<br>and<br>all<br>values<br>stated<br>herein<br>and/or<br>any<br>information<br>regarding the application of the product, Infineon|Please note that this product is not qualified<br>according to the AEC Q100 or AEC Q101 documents<br>.<br>;<br>;<br>ofthe Automotive Electronics Council.|
||warranties<br>and<br>liabilities<br>of any<br>kind,<br>including||
|Doyou have a question about this|without limitation warranties of non-infringement|**WARNINGS**|
|**document?**|of intellectual property rights of any third party.|Due to technical requirements products may|
|**Email:**erratum@infineon.com||contain dangerous substances. For information on|
||**is subject to customer’s compliance with its**<br>In addition, any information given in this document|Infineon Technologies office.<br>__the types in question please contact your nearest|
||obligations<br>stated<br>in<br>this<br>document<br>and<br>any||
|**Document reference**<br>**ifx1**|applicable<br>legal<br>requirements,<br>norms<br>and<br>standards concerning customer’s products and any<br>use of the product of Infineon Technologies in<br>customer’s applications.|Except as otherwise explicitly approved by Infineon<br>**Infineon Technologies’ products may**not be used in<br>Technologies<br>in<br>a<br>written<br>document<br>signed<br>by<br>authorized representatives of Infineon Technologies,<br>any applications where a failure of the product or|
|||any consequences of the use thereof can reasonably|
||The data contained in this document is exclusively|be expected to result in personal injury.|
||intended for technically trained staff. It is the||
||**responsibility of customer’s technical departments**||
||to evaluate the suitability of the product for the||
8
2016-5-26
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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