IRF7342D2PBF

PD- 95299 

## IRF7342D2PbF 

**FETKY** MOSFET & Schottky Diode 

Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel  HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free 

## **Description** 

The **FETKY**[TM] family of Co-packaged HEXFETs and Schottky diodes offer the designer  an  innovative board space saving solution for switching regulator  and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics.  The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. 

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A 1 8 K VDSS = -55V<br>A 2 7 K<br>S 3 6 D RDS(on) = 105mΩ<br>G 4 5 D<br> Schottky Vf = 0.61V<br>Top View<br>SO-8<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)** 

|**Parameter**<br>~~a———————————~~|**Parameter**<br>~~a———————————~~|**Maximum**<br>~~ae~~|**Units**<br>~~ae~~|
|---|---|---|---|
|ID@ TA= 25°C<br>~~a———————————~~<br>~~es~~|Continuous Drain Current,  VGS@ -10V<br>~~———————————~~|-3.4<br>~~ae~~|A<br>~~ae~~<br>|
|ID@ TA= 70°C<br>~~———————————~~<br>~~es~~|Continuous Drain Current,  VGS@ -10V<br>~~———————————~~|-2.7<br>~~ae~~||
|IDM<br>~~———————————~~<br>~~es~~<br>~~no~~<br>a<br>~~Ne~~|Pulsed Drain Current<br>~~———————————~~<br>~~no~~<br>|-27<br>~~ae~~<br>~~no~~<br>||
|PD@TA= 25°C<br>~~———————————~~<br>a<br>~~Ne~~|Power Dissipation<br>~~———————————~~<br>|2.0<br>~~ae~~<br>|W<br>~~ae~~<br>|
|PD@TA= 70°C<br>a<br>~~Ne~~|Power Dissipation<br>|1.3<br>||
|~~Nea~~|Linear Derating Factor<br>~~a~~|16<br>~~a~~|mW/°C<br>~~a~~|
|VGS<br>~~I~~|Gate-to-Source Voltage<br>~~I~~|± 20<br>~~I~~|V<br>~~I~~|
|dv/dt<br>~~a~~<br>~~ee~~|Peak Diode Recovery dv/dt<br>~~a~~<br>~~>~~|-5.0<br>~~a~~<br>~~>~~|V/ns<br>~~a~~<br>~~>~~|
|TJ,TSTG<br>~~ee~~|Peak Diode Recovery dv/dt<br>Junction and Storage Temperature Range<br>~~>~~|-55  to +150<br>~~>~~|°C<br>~~>~~|



## **Notes:** 

Repetitive rating – pulse width limited by max. junction temperature (see fig. 11) 

ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 

Pulse width ≤ 400µs – duty cycle ≤ 2% 

Surface mounted on 1 inch square copper board,  t ≤  10sec. www.irf.com 

1 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>-55<br>–––<br>–––<br>V<br>VGS= 0V, ID= -250µA<br>∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient<br>––– -0.054 –––<br>V/°C<br>Reference to 25°C, ID= -1mA<br>–––<br>95<br>105<br>VGS= -10V, ID= -3.4A<br>–––<br>150<br>170<br>VGS= -4.5V, ID= -2.7A<br>VGS(th)<br>Gate Threshold Voltage<br>-1.0<br>–––<br>–––<br>V<br>VDS= VGS, ID= -250µA<br>gfs<br>Forward Transconductance<br>3.3<br>–––<br>–––<br>S<br>VDS= -10V, ID= -3.1A<br>–––<br>–––<br>-2.0<br>VDS= -44V, VGS= 0V<br>–––<br>–––<br>-25<br>VDS= -44V, VGS= 0V, TJ= 70°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>100<br>VGS= 20V<br>Qg<br>Total Gate Charge<br>–––<br>26<br>38<br>ID= -3.1A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>3.0<br>4.5<br>nC<br>VDS= -44V<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>8.4<br>13<br>VGS= -10V, See Fig. 6 & 14<br>td(on)<br>Turn-On Delay Time<br>–––<br>14<br>22<br>VDD= -28V<br>tr<br>Rise Time<br>–––<br>10<br>15<br>ID= -1.0A<br>mΩ<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>IDSS<br>Drain-to-Source Leakage Current<br>~~ee~~<br>~~rs re es ee~~<br>~~aen~~<br>~~ss~~<br>~~-—_—} ____________}~~<br>|<br>~~} ff~~<br>~~|~~<br>~~a~~<br>~~es~~<br>~~rsOe rs~~<br>~~aen~~<br>~~sn~~<br>~~|~~<br>~~YE~~<br>~~ee~~ ~~ee~~<br>~~Po~~<br>~~Bs fp~~<br>~~$$$~~<br>—}-++}—<br>~~es ee~~<br>~~®~~<br>~~ee~~<br>ee|
|---|
|td(off)<br>Turn-Off Delay Time<br>–––<br>43<br>64<br>RG= 6.0Ω|
|tf<br>Fall Time<br>–––<br>22<br>32<br>VGS= -10V,<br>Ciss<br>Input Capacitance<br>–––<br>690<br>–––<br>VGS= 0V<br>~~ee~~<br>~~ee~~<br>~~®~~<br>~~a~~|
|Coss<br>Output Capacitance<br>–––<br>210<br>–––<br>pF<br>VDS= -25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>86<br>–––<br>ƒ = 1.0MHz, See Fig. 5<br>ee|
|**MOSFET Source-Drain Ratings and Characteristics**|
|**Parameter**<br>**Min. Typ. Max. Units**<br> **Conditions**<br>IS<br>Continuous Source Current(Body Diode) –––<br>–––<br>-2.0<br>ISM<br>Pulsed Source Current (Body Diode)<br>–––<br>–––<br>-27<br>VSD<br>BodyDiode Forward Voltage<br>–––<br>–––<br>-1.2<br>V<br>TJ= 25°C, IS= -2.0A, VGS= 0V<br>trr<br>Reverse Recovery Time (Body Diode)<br>–––<br>54<br>80<br>ns<br>TJ= 25°C, IF= -2.0A<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>85<br>130<br>nC<br>di/dt = 100A/µs<br>**Schottky Diode Maximum Ratings**<br>~~ee~~<br>~~rs rs re rs~~<br>~~ee~~<br>a<br>~~es~~<br>~~rsGe~~<br>~~**e**ee~~<br>~~en~~<br>~~e~~<br>~~se~~<br>~~®~~|
|**Parameter**<br>**Max.  Units**<br> **Conditions**<br>If (av)<br>Max. Average Forward Current<br>3.0<br>50% Duty Cycle. Rectangular Wave, TA= 57°C<br>See Fig. 21<br>ISM<br>Max. peak one cycle Non-repetitive<br>490<br>5µs sine or 3µs Rect. pulse<br>Following any rated<br>Surge current<br>70<br>10ms sine or 6ms Rect. pulse   load condition &<br>with Vrrm applied<br>~~a~~<br>GG<br>~~ee~~<br>a<br>~~ia~~l<br>en ee|
|**Schottky Diode Electrical Specifications**|
|**Parameter**<br>**Max. Units**<br>**Conditions**<br>Vfm<br>Max. Forward  Voltage  Drop<br>0.61<br>If = 3.0A, Tj = 25°C<br>0.76<br>If = 6.0A,  Tj = 25°C<br>0.53<br>If = 3.0A, Tj = 125°C<br>0.65<br>If = 6.0A,  Tj= 125°C<br>Vrrm<br>Max. Working Peak Reverse Voltage<br>60<br>Irm<br>Max. Reverse Leakage Current<br>2.0<br>mA       Vr = 60V<br>Tj = 25°C<br>30<br>Tj = 125°C<br>Ct<br>Max. Junction Capacitance<br>145<br>pF<br>Vr = 5Vdc ( 100kHz to 1 MHz) 25°C<br>es<br>~~rs re~~<br>~~CO~~<br>.<br>Py<br>ee<br>a<br>~~es~~<br>Gk2 ~~PO~~<br>~~—~~<br>~~es~~<br>reses|
|2<br>www.irf.com|



## **Power Mosfet Characteristics** 

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100<br>VGS<br>TOP          -15V<br>                 -10V                 -6.0V a a ee<br>                 -5.0V<br>                 -4.5V | Coto |<br>                 -3.5V<br>10<br>                 -3.0V<br>BOTTOM   -2.5V<br>ee 77 el<br>| Myer th<br>1 fe TT II<br>-2.5V<br>20µs PULSE WIDTH<br>0.1 Z an Aan Tj = 25°C nan |<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br> 100<br>==SaaS====<br>T  = 25  CJ °<br>pf peer<br> 10<br>| | | bear T  = 150  CJ °<br>=== S=ane=<br>ee 2<br>pf ff<br> 1 AasS/o<br>Ye ee<br>a eee eee<br>V      = -25VDS<br>P PP 20µs PULSE WIDTH<br>0.1<br>2.0 3.0 4.0 5.0 6.0 7.0<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100<br>VGS<br>TOP           -15V<br>                  -10V a a ee<br>                  - 6.0V<br>                  -5.5V<br>                  -4.5V } AH<br>10                   -3.5V<br>                  -3.0V<br>BOTTOM    - 2.5V<br>ec<br>| | ge ee|<br>1 Spe<br>-2.5V<br>20µs PULSE WIDTH<br>0.1 PMBl eT Tj = 150°C lll<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>2.0<br>ID = -3.4 A<br>T UT<br>1.5<br>CE ey<br>ELE er<br>Te<br>1.0 pzaal<br>LTE-<br>0.5 ‘<br>ELE<br>VGS = - 0V<br>0.0 EEE E E<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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## **Power Mosfet Characteristics** 

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1000 20<br>VGS = 0V, f = 1MHz ID = -3.1A<br>Ty Ciss = Cgs + Cgd , C      SHORTEDds T_ T VDS =-48V TI<br>Crss = Cgd VDS =-30V<br>800 Coss = Cds + Cgd 16 VDS =-12V<br>ee 2<br>Ciss<br>600 oh +t! 12 AFe<br>re | eT FST TIA<br>400 a 8 TAT<br>as eT TAT<br>200 a Coss 4 nn /Anne<br>es Crss II Vana<br>0 i 0 Ame<br> 1  10  100 0 10 20 30 40<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>| {| {| | {| | | | | ope | ode Oe ei Se 10us<br> 10  10 100us<br>pee) LARS<br>T  = 150  CJ °<br>1ms<br>T  = 25  CJ °<br>Papa pop SS<br> 1 ti ATA tt  1 | 10ms<br>0.1 |eson| {feee eetfee)ftee| ft e eee| V      = 0 V GS t eee| F  T T Single PulseCJ = 25  C= 150  C° ° eeaFBee ee eee<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

## **Fig 8.** Maximum Safe Operating Area 

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## **Power Mosfet Characteristics** 

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3.5 RT TTT TTT TT Vos Ro<br>3.0 Pp NT TE<br>i Ves our<br>2.5 PF | | dUNw ET Re i — -<br>+<br>pot ot tT PN<br>2.0 PF | tT d|cdTcd Th tT<br>| | tT | | | TNT Ves  1<br>1.5 | | | | | hd} dT IN Duty ≤ 0.1 %<br>| Factor<br>1.0 | | t | ft | tT | KA t<br>Fig 10a.   Switching Time Test Circuit<br>| | | | | cd} hdT hd| UTWN<br>0.5 | | | | ft | ft | ft A td(on) tr td(off) tf<br>| | | | {| | | | dt UL VGS<br>0.0 | | | | | | | | ft fy 10% se —<br>25 50 75 100 125 150<br>| T   , Case Temperature tt C tT Tt (  C)° | — |<br>90% |/\ |<br>as<br>Fig 9.   Maximum Drain Current Vs. VDS \<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>e e<br>te<br>0.20<br> 10<br>0.10<br>S 0.05 Ti<br>P 0.02 arrrim I PDM<br> 1 m 0.01 0 t1<br>SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>ee e e Notes:<br>1. Duty factor D = t   / t1 2<br>me ee 2. Peak TJ = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## **Power Mosfet Characteristics** 

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0.25 0.35<br>0.30<br>0.20<br>VGS = -4.5V<br>0.25<br>0.15 0.20<br>ID = -3.4A<br>0.15<br>0.10 VGS = -10V<br>0.10<br>0.05 0.05<br>3.0 5.0 7.0 9.0 11.0 13.0 15.0 0.0 4.0 8.0 12.0 16.0<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current ( A )<br> )<br>) ΩRDS ( on ) , Drain-to-Source On Resistance (<br>ΩRDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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QG<br>O T<br>QGS QGD<br>VG < pie -<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>-<br>THe) D.U.T. | +VDS<br>VGS<br>(ay<br>-3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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## **Power Mosfet Characteristics** 

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2.01.8 PANE 10080 ATTEN<br>ID = -250µA<br>1.6 BODO 60 TT<br>1.4 PLETE 40 a a<br>NEP RI<br>1.2 20<br>SN OT<br>1.0 0<br>-75 LETTE -50 -25 0 25 50 TTT 75 100 125 150 0.001 GUMS 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) ( V ) Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th)  Vs. Junction Temperature 

**Fig 16.** Typical Power Vs. Time 

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## **Schottky Diode Characteristics** 

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100 eps 100 ae<br>T  = 150°CJ<br>eee,<br>10<br>A ee 125°C<br>Se e S<br>100°C<br>1<br>ff = 75°C a<br>0.1<br>50°C<br>ff —<br>on) eee 0.01 e e<br>25°C<br>T  = 150°CJ<br>T  = 125°CJ 0.001 0 10 20 30 40 50 60<br>fe 7 —<br>10<br>ee T  =   25°CJ Fig. 18 Reverse Voltage - V    (V) - Typical Values ofR<br>ee 2 ee Reverse Current Vs. Reverse Voltage<br>fe eee 1000 ee<br>i =~ ——-——--——<br>Oe,<br>T  = 25°CJ<br>| EERE ASEEEE<br>WEEE<br>100<br>| EL |) A A R<br>1 po | PrNEESae e noconoe=rrpryyey ff<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8 Picttty yt<br> Forward Voltage Drop - V      (V)FM<br>LEE<br>10 EEL EEL<br>Fig. 17  - Maximum   Forward Voltage Drop 0 10 20 30 40 50 60<br>Characteristics Reverse Voltage - V   (V)R<br>R<br>F<br>Reverse Current - I    (mA)<br>Instantaneous Forward Current - I    (A)<br>T<br>Junction Capacitance - C    (pF)<br>**----- End of picture text -----**<br>


Fig. 19 - Typical  Junction  Capacitance Vs.   Reverse   Voltage 

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## **Schottky Diode Characteristics** 

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 100<br>Ei D = 0.500.20  aa ee — N<br> 10 e e<br>0.10 eerie alll) |||<br>0.05<br>= See<br>0.02 SH ee a PDM<br> 1<br>ere 0.01 re t1<br>t2<br>SINGLE PULSE Notes:<br>(THERMAL RESPONSE) 1. Duty factor D =t   / t1 2<br>0.1 Failra ay PTHCHMEEE 2. Peak TJ= P DM x  ZthJA + TA<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 20.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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180<br>160<br>140  R thJA   = 62.5 °C/W<br>120 conn<br>100 DC<br>80 TS [Xi]<br>60 TENET<br>40 see note (4)<br>20 Square wave ( D = 0.50)<br>80 % Rated  VR applied<br>0 PSE Tt<br>0 1 2 3 4 5 6<br>Average Forward Current - I F(AV) (A)<br>Allowable Ambient Temprature - (°C)<br>**----- End of picture text -----**<br>


**Fig.21** - Maximum Allowable Ambient Temp. Vs. Forward Current 

**Note (4)** Formula used: TC = TJ - (Pd + PdREV) x RthJA ; 

> Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D)  ; PdREV = Inverse Power Loss = VR1 x IR (1 - D);  IR @ VR1 = 80% rated VR 

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## SO-8 (Fetky) Package Outline 

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INCHES MILLIMETERS<br>DIM<br>D B Pe MIN MAX MIN MAX<br>A O 5 ee A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>———— b .013 .020 0.33 0.51<br>a 6 nni 8 7 6 5 e H ee cD .189.0075 .0098.1968 ee 0.194.80 ee 0.255.00 ee<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>_ ee ee ee<br>e1 .025  BASIC 0.635  BASIC<br>SE<br>cTmieieie a H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X G4 e kb TTT L .016 .050 0.40 1.27<br>fF y  0°  8°  0°  8°<br>7 e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>wosai 8X b A1 e Lfg 8X L 8X c<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>hae<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. Hood<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. oon<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>0003<br>3X 1.27 [.050] | 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


- NOTES: 1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2.  CONTROLLING DIMENSION: MILLIMETER 3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

- : 

## SO-8 (Fetky) Part Marking Information 

EXAMPLE: THIS IS AN IRF7807D1 (FETKY) 

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XXXX<br>INTERNATIONAL 807D1<br>RECTIFIER<br>LOGO<br>**----- End of picture text -----**<br>


DATE CODE (YWW) P =  DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>& 66 © a)<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) Ln FEED DIRECTION a<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>WAG<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 

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