IRF7341TRPBFXTMA1

PD -95199 

## IRF7341PbF 

Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free 

## **Description** 

## HEXFET[®] Power MOSFET 

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S1 1 8 D1<br>G1 2 7 D1 VDSS = 55V<br>S2 3 6 D2<br>G2 4 5 D2 R  = 0.050Ω<br>DS(on)<br>Top View<br>**----- End of picture text -----**<br>


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. 

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SO-8<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

OT **Parameter Max.** ~~LT]~~ **Units** ~~a~~ VDS Drain- Source Voltage 55 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 4.7 ~~a~~ ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 3.8 A ~~————OO~~ IDM Pulsed Drain Current ~~oop~~ 38 PD @TC = 25°C Power Dissipation 2.0 ~~a~~ PD @TC = 70°C ~~SS_JAJH-H_~~ Power Dissipation 1.3 ~~a~~ Linear Derating Factor 0.016 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V ~~a~~ EAS Single Pulse Avalanche Energy 72 ~~a~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C ~~oo oo~~ 

## **Thermal Resistance** 

~~a~~ **Parameter Typ. Max. Units** ~~a~~ RθJA Maximum Junction-to-Ambient ––– 62.5 °C/W www.irf.com 1 

## IRF7341PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|es<br>~~es~~|**Parameter**<br>es<br>|**Min.**<br>es<br>~~ren~~<br>~~ss~~|**Typ. **<br>es<br>~~rs~~<br>~~ss~~|**Max.**<br>es<br>~~Gs~~<br>~~ss~~|**Units**<br>es|**Conditions**<br>es|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~en~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~en~~<br>|55<br>~~ren ~~<br>~~en~~<br>~~ss~~|–––<br> ~~rs~~<br>~~en~~<br>~~ss~~|–––<br>~~Gs~~<br>~~en~~<br>~~ss~~|V<br>~~en~~|VGS= 0V, ID= 250µA<br>~~en~~|
|∆V(BR)DSS/∆TJ<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~a~~|––– <br>~~ss~~|0.059 <br>~~ss~~<br>~~DG~~|–––<br>~~ss~~<br>~~DG~~|V/°C<br>~~DG~~|Reference to 25°C, ID= 1mA|
|~~es~~<br>~~Sa~~|~~Sa~~|––– <br>~~ss~~<br>~~Sa~~|0.043 <br>~~ss~~<br>~~Sa~~|0.050<br>~~ss~~<br>~~Sa~~|Ω<br>~~Sa~~|VGS= 10V, ID= 4.7A<br>~~Sa~~|
|||––– <br>~~Sa~~|0.056 <br>~~Sa~~|0.065<br>~~Sa~~||VGS= 4.5V, ID= 3.8A<br>~~Sa~~|
|VGS(th)<br>~~ss~~<br>~~es~~|Gate Threshold Voltage<br>~~ss~~<br>~~Gs~~|1.0<br>~~ss~~<br>~~Gs~~|–––<br>~~ss~~<br>~~Gs~~|–––<br>~~ss~~<br>~~Gs~~|V<br>~~ss~~<br>~~Gs~~|VDS= VGS, ID= 250µA<br>~~ss~~<br>~~Gs~~|
|gfs<br>~~es~~|Forward Transconductance<br>~~Gs~~|7.9<br>~~Gs~~|–––<br>~~Gs~~|–––<br>~~Gs~~|S<br>~~Gs~~|VDS= 10V, ID= 4.5A<br>~~Gs~~|
|~~es~~<br>~~eo~~<br>~~|__|~~|~~Gs~~<br>~~eo~~<br>~~|__|~~|–––<br>~~Gs~~<br>~~eo~~|–––<br>~~Gs~~<br>~~eo~~|2.0<br>~~Gs~~<br>~~eo~~|~~Gs~~<br>~~eo~~|VDS= 55V, VGS= 0V<br>~~Gs~~<br>~~eo~~|
|||–––<br>~~eo~~<br>~~|__|~~|–––<br>~~eo~~<br>~~ee~~<br>|25<br>~~eo~~<br>~~ee~~<br>||VDS= 55V, VGS= 0V, TJ= 55°C<br>~~eo~~|
|~~ee~~<br>~~|__|~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~|__|~~|–––<br>~~ee~~<br>~~|__|~~|–––<br>~~ee~~<br>~~ee~~<br>|-100<br>~~ee~~<br>~~ee~~<br>|~~ee~~|VGS= -20V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~|__|~~|–––<br>~~ee~~<br>~~|__|~~|–––<br>~~ee~~<br>~~ee~~<br>|100<br>~~ee~~<br>~~ee~~<br>||VGS= 20V<br>~~ee~~|
|Qg<br>~~|__|~~<br>~~Rs~~|Total Gate Charge<br>~~|__|~~|–––<br>~~|__|~~||24<br>~~ee~~<br>}—|36<br>~~ee~~<br>}—|nC|ID= 4.5A<br>VDS= 44V<br>VGS= 10V, See Fig. 10<br>~~@~~|
|Qgs<br>~~|__|~~<br>~~Rs~~<br>~~es~~|Gate-to-Source Charge<br>~~|__|~~<br>~~es~~|–––<br>~~|__|~~||2.3<br>~~ee~~<br>}—|3.4<br>~~ee~~<br>}—|||
|Qgd<br>~~|__|~~<br>~~Rs~~<br>~~es~~<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~|__|~~<br>~~es~~|–––<br>~~|__|~~ ||7.0<br>~~ee~~<br> }—|10<br>~~ee~~<br>}—|||
|td(on)<br>~~es ~~<br>~~a~~<br>ee|Turn-On Delay Time<br> ~~es~~|–––|8.3|12||VDD= 28V<br>ID= 1.0A<br>RG= 6.0Ω<br>RD= 16Ω,<br>~~@~~<br>~~@~~|
|tr<br>~~a~~<br>ee<br>ee|Rise Time|–––|3.2|4.8|||
|td(off)<br>ee<br>ee<br>~~ee~~|Turn-Off Delay Time|–––|32|48|||
|tf<br>ee<br>~~ee~~|Fall Time|–––|13|20|||
|Ciss<br>~~ee~~<br>~~a~~<br>a|Input Capacitance|–––|740|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 9<br>~~@~~|
|Coss<br>a<br>ee|Output Capacitance|–––|190|–––|||
|Crss<br>a<br>ee|Reverse Transfer Capacitance|–––|71|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~a~~|**Parameter**<br>~~re~~|**Min.**<br>~~re~~|**Typ. **<br>~~rees~~|**Max.**<br>~~es~~|**Units**<br>~~es~~|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~a~~<br>~~a~~<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~re~~<br>~~eeee~~|~~re~~<br>~~el~~|~~re es ~~<br>~~elle~~|~~es ~~<br>~~le~~|~~es~~<br>A<br>~~le~~<br>~~OO~~<br>|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>|
|ISM<br>~~a~~<br>~~ee~~<br>~~ener~~|Pulsed Source Current<br>(BodyDiode)<br>~~eeee~~<br>~~ener~~|~~el~~<br>|~~elle~~<br>~~OO~~<br>|~~le~~<br>~~OO~~<br>|||
|VSD<br>~~ee~~<br>~~a es~~<br>~~ener~~<br>~~Re~~|Diode Forward Voltage<br>~~ee ee~~<br>~~es~~<br>~~ener~~|–––<br>~~el~~<br>~~es~~<br>nen|–––<br>~~el le~~<br>~~es~~<br>~~OO~~<br>nen|1.2<br>~~le~~<br>~~es~~<br>~~OO~~<br>nen|V<br>~~le~~<br>~~es~~<br>~~OO~~<br>~~ee~~|TJ= 25°C, IS= 2.0A, VGS= 0V<br>~~es~~<br>~~ee~~|
|trr<br>~~ener~~<br>~~Re~~|Reverse Recovery Time<br>~~ener~~|–––<br>nen|60<br>~~OO~~<br>nen|90<br>~~OO~~<br>nen|ns<br>~~OO~~<br>~~ee~~|TJ= 25°C, IF= 2.0A<br>di/dt = -100A/µs<br>~~ee~~<br>®|
|Qrr<br>~~ener~~<br>~~Re~~|Reverse RecoveryCharge<br>~~ener~~|–––<br>nen|120<br>~~OO~~<br>nen|170<br>~~OO~~<br>nen|nC<br>~~OO~~<br>~~ee~~||



## **Notes:** 

- ©© Repetitive rating;  pulse width limited by ISD ≤ 4.7A, di/d ≤ 220A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C 

- © Starting TJ = 25°C, L = 6.5mH @ Pulse width ≤ 300µs; duty cycle ≤ %. RG = 25Ω, IAS = 4.7A. (See Figure 8) 

When mounted on 1 inch square copper board,  t<10 sec 

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## IRF7341PbF 

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 100  100<br>VGS VGS<br>TOP 15V ee el TOP 15V ee<br>12V 12V<br>10V oof ep 10V TP[oe e |<br>8.0V Cee 8.0V a | |<br>4.0V 4.0V<br>3.5V 3.5V<br>BOTTOM 3.0V ee BOTTOM 3.0V Ht 720<br>Y gaia Wal<br> 10 geome)y  10 L ) U Zl<br>—)  SP i An<br>3.0V<br>3.0V<br>> //27 61 ee | rvie<br>Uy ey 20<br> 1 yAn t 20µs PULSE WIDTHT  = 25J °C  1 yWja|||a 20µs PULSE WIDTHT  = 150J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br> 100 —————————  100 SS SS<br>-— ° +4 a ><br>T  = 25  CJ<br>PP,m aa Seer T  = 150  CJ °  10 | T  = 150  CJJ ° + |} Ba} Ba Ba<br> 10 wae ls aPP SSS S S SS H2424 T  = 25  CJJ ° 58<br>a if<br>en ee e ee eeeeeee ee oe Ae Ae<br> 1<br>a ee ee ee ee ee — SS<br>V      = 25VDS<br>20µs PULSE WIDTH V      = 0 V GSGS<br> 1 0.1<br>3 4 5 6 0.2 0.5 0.8 1.1 1.4<br>V     , Gate-to-Source Voltage (V)GS V     ,Source-to-Drain Voltage (V)SD<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>I   ,  Drain-to-Source Current (A)D I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


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 100 SS SS<br>a ><br> 10 | T  = 150  CJJ ° + |} Ba} Ba Ba<br>aPP SSS S S SS H2424 ° 58<br>T  = 25  CJJ<br>if<br>ee oe Ae Ae<br> 1<br>— SS<br>V      = 0 V GSGS<br>0.1<br>0.2 0.5 0.8 1.1 1.4<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


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## IRF7341PbF 

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2.5 0.120<br>ID = 4.7A<br>P G<br>0 0 ee<br>2.0<br>PEEP PP<br>0.100<br>HU EU ER GRRRREREDEREREDS<br>1.5 PEELETT EETA 0.080 PiPt fttL| TEtt delLy<br>1.0 Pee B an VGS = 4.5V n<br>Pe 4<br>0.060<br>0.5 EEE {i 1<br>VGS = 10V<br>eee f ee<br>VGS = 10V<br>0.0 CE E 0.040 |} {| | |} |<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40<br>T  , Junction TemperatureJ (  C)° I    , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.12 200<br>ID<br>Pf tp pf TOP 2.1A<br>3.8A<br>160 BOTTOM 4.7A<br>2 0.10 | | [| | | |_|<br>| eo ONG<br>é | 120 P N<br>se 0.08 tt ly | | TNC<br>ge 1 | Vi yf 80 NE NEE<br>[| 0.06 \e nee [| NNENEE EEE<br>40<br>TN OSs<br>j Pt SSN<br>2 0.04 | [| | PR A 0 Peto SSS<br>0 2 4 6 8 10 25 50 75 100 125 150<br>V       , Gate-to-Source Voltage (V)GS  Starting T  , Junction TemperatureJ (  C)°<br> ( Ω )<br>Ω<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance DS (on)<br>R            , Drain-to-Source On Resistance<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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## IRF7341PbF 

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1200 VGS = 0V, f = 1MHz 20 ID = 4.5A<br>1000 —Nt CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 16 |tr VVVDSDSDS === 48V 30V 12V ||ST|<br>800 Ciss<br>S r ot 12 a fi<br>KO), SS P| tT | | ge<br>600<br>IN 8 ,<br>400 S o e = EEE<br>P| NAT TT TA TTT<br>Coss<br>NTP fT 4 TT GAT TTT<br>200 P SALT TTT all Wa<br>Crss<br>0 PEPPT TT Ce4 eLI 0 ZannAEE<br> 1  10  100 0 10 20 30 40<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>P D = 0.50 aener oh<br>0.20<br> 10 — e er——<br>0.10<br>= e eUE<br>enn 0.05 oc<br>T 0.02 E Fp FT FH PDM<br> 1 e 0.01 e t1<br>=<br>SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>e aie YY eAl ee 1. Duty factor D =Notes: t   / t1 2<br>e e 2. Peak T J= P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## IRF7341PbF 

## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 θ A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- ——— b .013 .020 0.33 0.51<br>8 7 6 _ 5 ooo c .0075 .0098 0.19 0.25<br>ts E 6 1 2 3 4 0.25 [.010] H A —— ee DE .189.1497 .1968.1574 4.803.80 5.004.00<br>e .050  BASIC 1.27  BASIC<br>{ ee<br>a e1 .025  BASIC 0.635  BASIC<br>4 H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oe ———— L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>paaun 8X b A1 t ( : c lw aa 8X L i e 8X c eo<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER ne<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>:      MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. F and<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>O      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. oan<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] 8X 1.78 [.070]<br>o | 0<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

ron’ XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~ 

DATE CODE (YWW) P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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## IRF7341PbF 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>oO66) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>|<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/04 

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## **IMPORTANT NOTICE** 

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With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

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For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

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Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.