IRF7331TRPBF

PD - 95266A 

## IRF7331PbF 

Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free 

HEXFET ® Power MOSFET a **VDSS** ee? **RDS(on) max (m ID 20V** 30@VGS = 4.5V 7.0A ee 45@VGS = 2.5V 5.6A a eee **e** 

## **Description** 

These N-Channel HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering technique 

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S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>Top View SO-8<br>**----- End of picture text -----**<br>


**Parameter Max. Units** ~~eers es~~ VDS Drain- Source Voltage 20 V ~~ee~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 7.0 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.5 A ~~aeee~~ IDM Pulsed Drain Current ~~©~~ 28 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 ~~Sr~~ ~~**e** ©~~ Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C ~~rs en~~ 

**Thermal Resistance Symbol Parameter Typ. Max. Units** ~~eses~~ RθJL Junction-to-Drain Lead ––– 42 RθJA Junction-to-Ambient ––– 62.5 °C/W ~~$$ ti od~~ Ht www.irf.com 1 07/09/08 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|se|**Parameter**<br>se|**Min. **<br>se<br>~~ee~~|**Typ. **<br>se<br>~~ee~~|**Max.**<br>se<br>~~ss~~|**Units**<br>se<br>~~ss~~|**Conditions**<br>se|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ss~~|Drain-to-Source Breakdown Voltage<br>~~ss~~|20<br>~~ss~~<br>~~ee~~|–––<br>~~ss~~<br>~~ee~~|–––<br>~~ss~~<br>~~ss~~|V<br>~~ss~~<br>~~ss~~|VGS= 0V, ID= 250µA<br>~~ss~~|
|∆V(BR)DSS/∆TJ<br>~~se~~|Breakdown Voltage Temp. Coefficient<br>~~se~~<br>||––– <br>~~ee~~<br>~~se~~<br>||0.013<br>~~ee ~~<br>~~se~~<br>|–––<br> ~~ss~~<br>~~se~~|V/°C<br>~~ss~~<br>~~se~~|Reference to 25°C, ID= 1mA<br>~~se~~<br>ss|
|RDS(on)<br>~~SE~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~SE~~<br>|<br>|–––<br>~~SE~~<br>||–––<br>~~SE~~<br>|30<br>~~SE~~|mΩ<br>~~SE~~<br>|VGS= 4.5V, ID= 7.0A<br>~~SE~~<br>ss|
|||–––<br>~~SE~~<br>|~~|~~<br>|–––<br>~~SE~~<br>~~|~~<br>|45<br>~~SE~~<br>||VGS= 2.5V, ID= 5.6A<br>~~SE~~<br>ss<br>|
|VGS(th)<br>~~es~~<br>~~Rs~~|Gate Threshold Voltage<br>|<br>~~es~~<br>|0.6<br>|~~|~~<br>~~es~~|–––<br>~~|~~<br>~~es~~|1.2<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>ss<br>~~es~~|
|gfs<br>~~es~~<br>~~Rs~~<br>~~ee~~<br>~~=~~|Forward Transconductance<br><br>~~es~~<br>~~i~~<br><br>|14<br>~~|~~<br>~~es~~<br>~~es~~<br>|–––<br>~~|~~<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~ss~~<br>~~en~~|S<br>~~es~~<br>~~ss~~<br>~~en Pe~~|VDS= 10V, ID= 7.0A<br>~~es~~<br>~~Pe~~|
|IDSS<br><br>~~Rs~~<br>~~ee~~<br>~~=~~|Drain-to-Source Leakage Current<br>~~es~~<br>~~i~~<br>~~ee~~<br>~~_———~~|–––<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~es~~<br>~~ee~~|1.0<br>~~es~~<br>~~ss~~<br>~~eeen~~|~~es~~<br>~~ss~~<br>~~en Pe~~|VDS= 16V, VGS= 0V<br>~~es~~<br>~~Pe~~|
|||–––<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|25<br>~~ss~~<br>~~eeen~~||VDS= 16V, VGS= 0V, TJ= 70°C<br>~~Pe~~|
|~~ee~~<br>~~=~~<br>~~pf~~|Gate-to-Source Forward Leakage<br>~~i~~<br><br>~~_———~~|–––<br>~~es~~<br>|–––<br>~~es ~~<br>|100<br> ~~ss~~<br>~~en~~|~~ss~~<br>~~en Pe~~|VGS= 12V<br>~~Pe~~|
||Gate-to-Source Reverse Leakage<br><br>~~_———~~<br>~~pf~~___________}|–––<br><br>___________}{||–––<br><br>{|}|-100<br>~~en~~||VGS= -12V<br>~~Pe~~|
|Qg<br> <br>~~pf~~|Total Gate Charge<br> ~~_———~~<br>~~pf~~___________}|–––<br>___________}{||13<br>{|}|20|nC|ID= 7.0A<br>VDS= 10V<br>VGS= 4.5V|
|Qgs<br>~~pf~~|Gate-to-Source Charge<br>~~pf~~___________}<br>~~a~~|–––<br>___________}{|<br>~~a~~|3.7<br>{|}<br>~~a~~|–––|||
|Qgd<br>~~pf~~<br>a~~ee~~|Gate-to-Drain("Miller")Charge<br>~~pf~~ ___________}<br>~~ee~~|–––<br>___________} {|<br>~~ee~~|2.1<br>{| }<br>~~ee~~|–––<br>~~ee~~|||
|td(on)<br>~~+4~~|Turn-On Delay Time<br>~~+4~~|–––<br>~~+4~~|7.6<br>~~+4~~|–––||VDD= 10V<br>ID= 1.0A<br>RG= 53Ω<br>VGS= 4.5V<br>@|
|tr<br>~~+4~~|Rise Time<br>~~+4~~<br>~~ee~~|–––<br>~~+4~~<br>~~ee~~|22<br>~~+4~~<br>~~ee~~|–––|||
|td(off)<br>a<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~|110<br>~~ee~~|–––|||
|tf<br>~~ee~~<br>~~ee~~|Fall Time|–––|50|–––|||
|Ciss<br>~~ee~~<br>~~ee~~<br>ee|Input Capacitance|–––|1340|–––|pF|VGS= 0V<br>VDS= 16V<br>ƒ = 1.0MHz|
|Coss<br>~~ee~~<br>ee<br>ee|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|170<br>~~ee~~|–––|||
|Crss<br>ee<br>ee|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|120<br>~~ee~~|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~Rs~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~<br>~~ss~~|**Typ. **<br>~~es~~<br>~~ss~~|**Max.**<br>~~es~~|**Units**<br>~~es~~|**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|IS<br>~~Rs~~|Continuous Source Current<br>(Body Diode)<br>~~es~~|~~es~~<br>~~ss~~|~~es~~<br>~~ss~~|2.0<br>~~es~~|~~es~~<br>~~so~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~es~~<br>~~so~~|
|ISM<br>~~rs~~|Pulsed Source Current<br>(BodyDiode)<br>~~rs so~~|~~so~~|~~so~~|28<br>~~so~~|||
|VSD<br>~~rs~~|Diode Forward Voltage<br>~~rs so~~|–––<br>~~so~~|–––<br>~~so~~|1.2<br>~~so~~|V<br>~~so~~|TJ= 25°C, IS= 2.0A, VGS= 0V<br>~~so~~|
|trr<br>~~rs~~<br>~~el~~|Reverse Recovery Time<br>~~rs so~~<br>~~el~~|–––<br>~~so~~<br>~~el~~|31<br>~~so~~<br>~~el~~|47<br>~~so~~<br>~~el~~|ns<br>~~so~~<br>~~el~~|TJ= 25°C, IF= 2.0A<br>di/dt = 100A/µs<br>~~so~~<br>~~el~~<br>®|
|Qrr<br>~~el~~<br>~~se~~|Reverse Recovery Charge<br>~~el~~<br>~~se~~|–––<br>~~el~~<br>~~se~~|15<br>~~el~~<br>~~se~~|23<br>~~el~~|nC<br>~~el~~||



Repetitive rating;  pulse width limited by max. junction temperature. 

Surface mounted on 1 in square Cu board 

Pulse width ≤ 400µs; duty cycle ≤ 

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 1000<br>VGS<br>TOP 7.5V<br>4.5V<br>3.5V<br>3.0V<br>2.5V MEL<br>2.0V<br> 100 1.75V 1 Et<br>BOTTOM 1.5V<br>a<br> 10<br>CZ<br>HT 1.50V<br> 1 E e<br>ee ||<br>(A | | PTT<br>20µs PULSE WIDTH<br>0.1 tFT tte fst t T  = 25J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 100<br>Ee<br>—————Es es ee eee e e<br>pr|= T  = 25  CJ °<br>> aan T  = 150  CJ °<br> 10 eeSa |<br>[sfeeTS A | SSS ee| Jf eefT<br>(A<br>V      = 15VDS<br>20µs PULSE WIDTH<br> 1<br>1.5 2.0 2.5 3.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 100<br>VGS<br>TOP 7.5V<br>4.5V<br>3.5V<br>3.0V<br>2.5V HE HE<br>2.0V<br>1.75V Coco<br>BOTTOM 1.5V<br>Wii<br> 10<br>w/e a |<br>WY /7 t 1.50V n<br>YeGAA OUaTal<br>i/ Y<br>20µs PULSE WIDTH<br>C AN T  = 150J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 7.0A<br>PELE EEL<br>LEER EEE<br>1.5 PELE<br>1.0 eectHL<br>TTLLETT |  LLL<br>0.5 LEER EEE<br>ESUUNERUOROAONNORUID<br>VGS = 4.5V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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2400<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>2000 Crss    = Cgd<br>a l Coss   = Cds + Cgd<br>= a<br>1600<br>Ciss<br>PS S oh<br>1200 PS s<br>ee |<br>Pere Ch<br>800<br>a<br>400<br>Coss<br>W t | PTT EEE<br>e e<br>Crss<br>0 RS S<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 100<br> 10<br>T  = 150  CJ °<br> 1<br>== .. T  = 25  CJ ° .<br>PE<br>V      = 0 V GS<br>0.1 FP Tey Tet tf<br>0.2 0.4 0.6 0.8 1.0 1.2<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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8<br>ID = 7.0A<br>VDS = 10V<br>6 pe see<br>aan SJ<br>Pi titi TAT<br>4 Pit LLL YE |<br>TTT Ty<br>)<br>2 PLBP =A7nneeeTT YE Ff} yd<br>A<br>0 Vane aeae<br>0 4 8 12 16 20<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>10<br>100µsec<br>1msec<br>1<br>10msec<br>S a r<br>Tc = 25°C<br>|<br>Tj = 150°C<br>Single Pulse<br>0.1 etll<br>0.1 1 10 100<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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8.0 ett itt ti yt Vos —]— Rp<br>6.0<br>PN a t (map -<br>PEELE Voc<br>4.0<br>≤ 1<br>SeEeaS Nee ves ≤ 0.1 %<br>TN man<br>2.0 PE EEE LLIN G Fig 10a.   Switching Time Test Circuit<br>VDS<br>TTT 90% —<br>0.0<br>25 50 75 100 125 150<br>Fit} T   , Case TemperatureC E ee (  C) | ° Y \/<br>10%<br>/\<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>il Komen nena RENNIE = ee eee<br>0.20 NL<br> 10<br>0.10<br>0.05<br>e er<br>0.02<br>PDM<br>0.01<br> 1 = oT oC<br>o e m a SINGLE PULSE t1<br>(THERMAL RESPONSE) t2<br>a ee ee ee eee<br>e aee ee 1. Duty factor D =Notes: t   / t1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.05 0.12<br>0.10<br>0.04 P PyyPt E E E<br>0.08 | tt d e e<br>L TT EE<br>0.03 0.06<br>- ID = 7.0A e e e<br>VGS = 2.5V<br>0.04<br>Sy) Ee<br>0.02<br>0.02<br>VGS = 4.5V<br>P TT) PREF S<br>0.01 0.00 Pit tol<br>2.0 4.0 6.0 8.0 0 5 10 15 20 25 30<br>VGS, Gate -to -Source Voltage  (V) ID , Drain Current (A)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


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Fig 12.    Typical On-Resistance Vs. Fig 13.    Typical On-Resistance Vs.<br>Gate Voltage Drain Current<br>Current Regulator<br>Same Type as D.U.T.<br>QG 50KΩ<br>12V .2µF<br>.3µF<br>+<br>O QGS O QGD IT + D.U.T. | -VDS<br>VG VGS<br>3mA<br>eS<br>a |<br>Charge 7 IG ID<br>Current Sampling Resistors<br>Fig 14a.   Basic Gate Charge Waveform Fig 14b.   Gate Charge Test Circuit<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance Vs. Drain Current 

**Fig 14b.** Gate Charge Test Circuit 

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1.21.1 P NET 6050 UTE TIT<br>1.0<br>40<br>0.9 H A NS ID = 250µA C e<br>30<br>0.8 E N G e d A AT EEL<br>20<br>0.7 T T TTT NC L NT<br>P EEING 10 t e<br>0.60.5 P EELE EEN 0 OW<br>-75 -50 -25 0 25 50 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000<br>TJ , Temperature ( °C ) Time (sec)<br>VGS(th) Gate threshold Voltage (V)<br>Power (W)<br>**----- End of picture text -----**<br>


Typical Power Vs. Time 

**Fig 15.** Typical Vgs(th)  Vs. Junction Temperature 

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## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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## **SO-8 Tape and Reel** 

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TERMINAL NUMBER 1<br>eoeoo)|4<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>|  330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

## **Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008 

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