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IRF7329TRPBF
Dual MOSFET, P Channel, 12 V, 12 V, 9.2 A, 9.2 A, 0.017 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-9.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.017ohm; Rds(on) ; Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 12V
- Drain Source Voltage Vds P Channel: 12V
- Continuous Drain Current Id N Channel: 9.2A
- Continuous Drain Current Id P Channel: 9.2A
- Drain Source On State Resistance N Channel: 0.017ohm
- Drain Source On State Resistance P Channel: 0.017ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.392 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
PD- 94095
## IRF7329
HEXFET[®] Power MOSFET
- G Trench Technology G Ultra Low On-Resistance
- G Dual P-Channel MOSFET G Low Profile (<1.8mm)
- G Available in Tape & Reel
|**VDSS**|**RDS(on) max (mΩ)**|**ID**|
|---|---|---|
|**-12V**|**DS(on)**<br>17@VGS= -4.5V|±9.2A<br>±7.4A<br>±4.6A|
||21@VGS= -2.5V||
||30@VGS= -1.8V||
## **Description**
New P-Channel HEXFET[] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
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S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G 2 4 5 D2<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>
**Absolute Maximum Ratings**
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a Parameter Max. Units<br>a VDS Drain- Source Voltage -12 V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -9.2<br>a ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -7.4 A<br>a IDM Pulsed Drain Current © -37 al<br>OOO PD @TA = 25°C Power Dissipation 2.0 W<br>Ee PD @TA = 70°C Power Dissipation 1.3<br>Linear Derating Factor 16 mW/°C<br>oh VGS Gate-to-Source Voltage ± 8.0 V<br>a TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C<br>**----- End of picture text -----**<br>
## **Thermal Resistance**
**Symbol Parameter Typ. Max. Units** ee nn ( RθJL Junction-to-Drain Lead ––– 20 ee RθJA Junction-to-Ambient ––– ee 62.5 °C/W www.irf.com 1
2/5/01
## IRF7329
## **FOR REVIEW ONLY**
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|~~es~~|~~rs~~|~~es ee~~|~~ee~~|~~ed~~|~~es~~||
|---|---|---|---|---|---|---|
|~~es~~|**Parameter**<br>~~rs~~|**Min. **<br>~~es ee~~|**Typ. **<br>~~ee~~|**Max.**<br>~~ed~~|**Units**<br>~~es~~|**Conditions**|
|V(BR)DSS<br>~~es~~<br>~~GO~~|Drain-to-Source Breakdown Voltage<br>~~rs ~~<br>~~GO~~|-12<br> ~~es ee~~<br>~~GO~~|–––<br>~~ee~~<br>~~GO~~|–––<br>~~ed ~~<br>~~GO~~|V<br> ~~es~~<br>~~GO~~|VGS= 0V, ID= -250µA<br>~~GO~~|
|∆V(BR)DSS/∆TJ<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~ns~~<br>||––– <br>~~ns~~<br>|<br>[|0.007 <br>~~Ds~~<br>[**|**|–––<br>~~Ds~~|V/°C|Reference to 25°C, ID= -1mA|
|RDS(on)<br>~~es~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>|<br><br>|–––<br>|<br>[<br>~~——|—~~|–––<br>[**|**<br>~~——|—~~|17<br>~~——|—~~|mΩ<br>~~[COST~~<br><br>~~**GO**~~<br>|VGS= -4.5V, ID= -9.2A<br>~~[COST~~|
|||–––<br>|<br>[<br>~~——|—~~<br>~~|~~|–––<br>[**|**<br>~~——|—~~<br>~~|~~|21<br>~~——|—~~<br>||VGS= -2.5V, ID= -7.4A<br>~~[COST~~|
|||–––<br>~~——|—~~<br>~~||~~<br><br>~~**s**~~<br>|–––<br>~~——|—~~<br>~~||~~<br><br>~~**s**d~~<br>|30<br>~~——|—~~<br>~~|~~<br><br>~~**GO**~~<br>||VGS= -1.8V, ID= -4.6A<br>~~[COST~~<br><br>|
|VGS(th)<br>~~es~~<br>~~es~~|Gate Threshold Voltage<br>~~en~~<br>|-0.40<br>~~——|—~~<br>~~||~~<br>~~en~~<br>~~**s**~~<br>|–––<br>~~——|—~~<br>~~||~~<br>~~en~~<br>~~**s**d~~<br><br>~~e~~|-0.90<br>~~——|— ~~<br>~~|~~<br>~~en~~<br>~~**GO**~~<br>|V<br> ~~[COST~~<br>~~en~~<br>~~**GO**~~<br>|VDS= VGS, ID= -250µA<br>~~[COST~~<br>~~en~~<br>|
|gfs<br>~~es~~<br>~~es~~|Forward Transconductance<br><br>~~en~~|25<br>~~|~~<br><br>~~**s**~~<br>~~en~~|–––<br>~~|~~<br><br>~~**s**d~~<br>~~en~~<br>~~e~~|–––<br>~~|~~<br><br>~~**GO**~~<br>~~en~~|S<br><br>~~**GO**~~<br>~~en~~|VDS= -10V, ID= -9.2A<br><br>~~en~~|
|IDSS<br>~~es~~<br>~~ES~~|Drain-to-Source Leakage Current<br><br>~~ES~~<br>~~|~~|–––<br>~~**s**~~<br><br>~~ES~~<br>~~|~~<br>~~|~~|–––<br>~~**s**d ~~<br><br>~~e~~<br>~~ES~~|-1.0<br> ~~**GO**~~<br><br>~~ES~~|µA<br>~~**GO**~~<br><br>~~ES~~|VDS= -9.6V, VGS= 0V<br><br>~~ES~~|
|||–––<br>~~ES~~<br>~~|~~<br>~~|~~|–––<br>~~ES~~|-25<br>~~ES~~||VDS= -9.6V, VGS= 0V, TJ= 70°C<br>~~ES~~|
|IGSS<br>~~OO~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~OO~~|–––<br>~~|~~<br>~~|~~<br>~~OO~~|–––<br>~~OO~~|-100<br>~~OO~~|nA<br>~~OO~~|VGS= -8.0V<br>~~OO~~|
||Gate-to-Source Reverse Leakage<br>~~OO~~<br>~~es~~|–––<br>~~OO~~<br>~~es~~|–––<br>~~OO~~<br>~~es~~|100<br>~~OO~~||VGS= 8.0V<br>~~OO~~|
|Qg<br>~~**ee**~~|Total Gate Charge|–––|38|57|nC|ID= -9.2A<br>VDS= -6.0V<br>VGS= -4.5V|
|Qgs<br>~~**ee**~~|Gate-to-Source Charge|–––|6.8|10|||
|Qgd<br>~~**ee**~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~|8.1<br>~~ee~~|12|||
|td(on)<br>~~**ee**~~<br>~~ee~~<br>ee|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|10<br>~~ee~~<br>~~ee~~|–––|ns|VDD= -6.0V<br>ID= -1.0A<br>RD= 6.0Ω<br>VGS= -4.5V<br>@|
|tr<br>~~ee~~<br>ee<br>ee<br>~~ee~~|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|8.6<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(off)<br>ee<br>ee<br>~~ee~~<br>~~Se~~|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|340<br>~~ee~~<br>~~ee~~|–––|||
|tf<br>ee<br>~~ee~~<br>~~Se~~|Fall Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|260<br>~~ee~~|–––|||
|Ciss<br>~~ee ~~<br>~~Se~~|Input Capacitance<br> ~~ee~~|–––<br>~~ee~~|3450|–––|pF<br>|VGS= 0V<br>VDS= -10V<br>ƒ = 1.0MHz<br>@<br>|
|Coss<br> <br>~~Se~~|Output Capacitance<br> ~~ee~~|–––|1000|–––|||
|Crss<br> <br>~~Se~~<br>a|Reverse Transfer Capacitance<br> ~~ee~~<br>|–––<br>|640<br>|–––<br>|||
**Notes:**
© Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board. max. junction temperature.
© Pulse width ≤ 400µs; duty cycle ≤ 2%.
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2
IRF7329
## **FOR REVIEW ONLY**
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100 100<br>VGS VGS<br>TOP -10V TOP -10V<br>-7.0V -7.0V<br>-4.5V -4.5V<br>-3.0V -3.0V<br>-2.5V -2.5V<br>-1.8V AA -1.8V ere<br>-1.5V -1.5V<br>BOTTOM -1.2V BOTTOM -1.2V<br> 10<br>ee ae J oh<br> 10<br>Se eel Uf 7<br>ee| V7PZAAS ZLtttaee ee<br> 1<br>-1.2V<br>es ——— eee nell LAA a<br>-1.2V<br>Stee a ae ETmeni Ce<br>0.1 tt 20µs PULSE WIDTHT = 25J °C 1 A L 20µs PULSE WIDTHT = 150J °C<br>0.1 1 10 0.1 1 10<br>-V , Drain-to-Source Voltage (V)DS -V , Drain-to-Source Voltage (V)DS<br>D D<br>-I , Drain-to-Source Current (A) -I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 1.** Typical Output Characteristics
**Fig 2.** Typical Output Characteristics
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**----- Start of picture text -----**<br>
2.0<br>100 ID = -9.2A<br>Ee es es es<br>a on 1.5 E EE<br>ee ee ee eee ee T<br>a TJ = 150°C Aa PEELE ELLE LE<br>i ELL<br>10 — iv7| 1.0 Cee<br>ee eeSe4 Ge ee ee eee eerT |<br>pfPY 7P TJ = 25°C F f 0.5 EEE<br>VDS = -10V<br>1 y p 20µs PULSE WIDTH EL LE VGS = -4.5V<br>0.0<br>1.0 1.4 1.8 2.2 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-VGS, Gate-to-Source Voltage (V) T , Junction TemperatureJ ( C)°<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>)<br>(Α<br>-ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Normalized On-Resistance Vs. Temperature
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3
**FOR REVIEW ONLY**
## IRF7329
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**----- Start of picture text -----**<br>
10<br>5000 VGS = 0V, f = 1 MHZ ID = -9.2A<br>4000 no nll CCCrss iss = C = C = Cgd gs + C+ Cgd, Cds SHORTED 8 paveCTT nE VV R DSDS == aene -9.6V-6V RET<br>oss ds gd<br>Ciss<br>3000 Ps 6 PPT E A<br>a eee | SEREESEESY Zann<br>a ll EE EREEED/AREne<br>2000 4<br>S Coss t EECA<br>1000 Crss 2<br>pes SSt iaemaly BEEPTEETTZARY)<br>0 e n | ZEEETTT TTT<br>0<br>1 10 100 0 10 20 30 40 50 60 70<br>-VDS, Drain-to-Source Voltage (V) Q , Total Gate Charge (nC)G<br>GS<br>-V , Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>
## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage
## **Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage
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**----- Start of picture text -----**<br>
100<br> 10 2<br>T = 150 CJ °<br>| | | bay<br>a a .nn<br> 1<br>jt Att T = 25 CJ | °<br>Fst f7t CO<br>p t<br>Am/o eo V = 0 V GS<br>0.1<br>0.2 0.4 0.6 0.8 1.0<br>-V ,Source-to-Drain Voltage (V)SD<br>SD<br>-I , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>100us<br>rane carae<br>ai it amit<br> 10 CHM NUE 1ms | Ul<br>EHS Erte<br>a T TAJ = 25 C= 150 C° ° (mee 10ms<br> Single Pulse a<br> 1<br>0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>I , Drain Current (A) D-<br>**----- End of picture text -----**<br>
## **Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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## **FOR REVIEW ONLY**
## IRF7329
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**----- Start of picture text -----**<br>
10.0 RD<br>VDS<br>TELL |<br>8.0 SCTE EEE VGS D.U.T.<br>COPSCEEL RG +- VDD<br>6.0 CERES pow<br>VGS<br>CEES ,<br>Pulse Width ≤ 1 µs<br>FEEEEEENE Duty Factor ≤ 0.1 %<br>4.0 CECEEEEEN<br>CECE Fig 10a. Switching Time Test Circuit<br>2.0<br>td(on) tr td(off) tf<br>HCCEEEECITY oo<br>VGS<br>0.0 10%<br>25 Fi} 50 ttt} 75 100 tt 125 ft tf 150 || ——e<br>T , Case TemperatureC ( C)°<br>90% A<br>Fig 9. Maximum Drain Current Vs. VDS \<br>Case Temperature<br>Fig 10b. Switching Time Waveforms<br> 100<br>p D = 0.50 ere<br>0.20<br> 10 e e<br>0.10<br>0.05<br>aan Se imeeee amet email ell meme<br>Po 0.02 re Fy bh PDM<br> 1<br>0.01 t1<br>t2<br>mpd (THERMAL RESPONSE)SINGLE PULSE aee 1. Duty factor D =Notes: t / t1 2<br>2. Peak T J = P DM x Z thJA + TA<br>0.1 ATT ly cu EC<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>D<br>-I , Drain Current (A)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
## IRF7329
## **FOR REVIEW ONLY**
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**----- Start of picture text -----**<br>
0.030 0.030<br>0.0250.020 TC AEOE 0.0250.020 VGS = -1.8V<br>VGS = -2.5V<br>ID = -9.2A<br>0.015 0.015<br>VGS = -4.5V<br>R E E T<br>POSSE<br>0.010 0.010<br>0.0 2.0 4.0 6.0 8.0 4 6 8 10 12 14<br>-VGS, Gate -to -Source Voltage (V) -ID , Drain Current (A)<br>)Ω Ω)<br>RDS(on) , Drain-to -Source On Resistance ( RDS (on) , Drain-to-Source On Resistance (<br>**----- End of picture text -----**<br>
**Fig 12.** Typical On-Resistance Vs. Gate Voltage
**Fig 13.** Typical On-Resistance Vs. Drain Current
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**----- Start of picture text -----**<br>
QG<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>D.U.T. +-VDS<br>VGS<br>-3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**Fig 14a.** Basic Gate Charge Waveform
**Fig 14b.** Gate Charge Test Circuit
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6
IRF7329
## **FOR REVIEW ONLY**
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**----- Start of picture text -----**<br>
1.0 100 N UN<br>80<br>H U) EY<br>0.8<br>ID = -250µA 60<br>0.6 P PLE TY A H SE<br>c e ce 40 A VE<br>CNETIIEESIIE ET<br>S Ne N<br>0.4<br>N 20 C AIN<br>L IAN TINE UT<br>a | S c<br>0.2 0<br>-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C ) Time (sec)<br>Fig 16. Typical Power Vs. Time<br>Fig 15. Typical Vgs(th) Vs.<br> Junction Temperature<br>Power (W)<br>-VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
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7
## IRF7329
## **FOR REVIEW ONLY**
## **SO-8 Package Details**
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**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- | b -}—+—+—,J .013 .020 0.33 0.51<br>7 6 loos 8 7 6 . 5 H aa — cD .0075.189 .0098.1968 ee 4.800.19 ee 5.000.25 ee<br>E<br>1 2 3 4 0.25 [.010] A ee E .1497 .1574 3.80 4.00<br>e .050 BASIC 1.27 BASIC<br>e1 .025 BASIC 0.635 BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X A e bk a L .016 .050 0.40 1.27<br>a y 0° 8° 0° 8°<br>7 e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>SAEel 8X b A1 o (fnye 8X L 8X c<br>0.25 [.010] C A B 7<br>er TT FOOTPRINT<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>j [a] nae [oa]<br> MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| iii<br>3X 1.27 [.050] aq ug ke g<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
- 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
- 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.
## **SO-8 Part Marking**
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
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**----- Start of picture text -----**<br>
YWW<br>XXXX<br>INTERNATIONAL F7101<br>ae<br>RECTIFIER<br>LOGO THEE<br>**----- End of picture text -----**<br>
DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK
## LOT CODE
PART NUMBER
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8
## **FOR REVIEW ONLY**
## IRF7329
## **Tape and Reel**
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**----- Start of picture text -----**<br>
T E R M IN A L N U M B E R 1<br>oe 6 6 6<br>12.3 ( .48 4 )<br>11.7 ( .46 1 )<br>8.1 ( .31 8 )<br>7.9 ( .31 2 ) ee FE E D D IR E C TIO N<br>**----- End of picture text -----**<br>
N O TE S :
- 1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
- 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
- 3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1.
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**----- Start of picture text -----**<br>
33 0.00<br>(12.992)<br> M AX .<br>14.40 ( .5 66 )<br>12.40 ( .4 88 )<br>**----- End of picture text -----**<br>
N O TE S :
1. C O N T R O LLIN G D IME N S IO N : M ILLIM E T ER .
2. O U TL IN E C O N FO R M S T O E IA -481 & E IA -541.
Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 2/01
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9
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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