IRF7324TRPBF
Dual MOSFET, Dual P Channel, 20 V, 9 A
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: Dual P Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: -
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: -
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: -
- Continuous Drain Current Id P Channel: 9A
- Drain Source On State Resistance N Channel: -
- Drain Source On State Resistance P Channel: 0.018ohm
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 1.26 € |
| Current stock | 10+ |
| Lead time | 30 days |
## IRF7324PbF
## HEXFET[®] Power MOSFET
- Trench Technology
- Ultra Low On-Resistance
- Dual P-Channel MOSFET
- Low Profile (<1.1mm)
- Available in Tape & Reel
- 2.5V Rated
- Lead-Free
## **Description**
New trench HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
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S1 1 8 D1<br>G1 2 7 D1 VDSS = -20V<br>“1GTi<br>S2 3 6 D2<br>G2 4 5 D2 R = 0.018Ω<br>“alel DS(on)<br>Top View<br>SO-8<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
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SC Parameter Max. Units<br>VDS Drain-Source Voltage -20 V<br>esee<br>SC ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -9.0<br>ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -7.1 A<br>a IDM Pulsed Drain Current © -71<br>a PD @TA = 25°C Maximum Power Dissipation 2.0 W<br>a PD @TA = 70°C Maximum Power Dissipation 1.3 W<br> Linear Deratin a g Factor 16 mW/°C<br>a VGS Gate-to-Source Voltage ± 12 V<br>TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C<br>a<br>**----- End of picture text -----**<br>
|**Thermal Resistance**|||
|---|---|---|
|**Parameter Max.**<br>**Units**<br>RθJA<br>Maximum Junction-to-Ambient<br>62.5 °C/W<br>~~Se~~|||
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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|||~~Od~~|~~rs rs~~|~~rs~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>rs|**Min. **<br>rs<br>~~Od~~<br>~~Ors~~|**Typ. **<br>rs<br>~~rs rs~~<br>~~GG~~|**Max.**<br>rs<br>~~rs~~<br>~~GG~~|**Units**<br>rs<br>~~GG~~|**Conditions**<br>rs|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~rs~~|-20<br>~~Od ~~<br>~~rs~~<br>~~Ors~~<br>~~rs~~|–––<br> ~~rs rs~~<br>~~rs~~<br>~~GG~~<br>~~rs~~|–––<br>~~rs~~<br>~~rs~~<br>~~GG~~<br>~~rs~~|V<br>~~rs~~<br>~~GG~~<br>~~Oe~~|VGS= 0V, ID= -250µA<br>~~rs~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~rs~~|–––<br>~~Ors~~<br>~~rs~~<br>~~rs~~<br>~~I—|~~|-0.02<br>~~GG~~<br>~~rs~~<br>~~rs~~<br>~~I—|~~|–––<br>~~GG~~<br>~~rs~~<br>~~rs~~<br>~~I—|~~|V/°C<br>~~GG~~<br>~~rs~~<br>~~Oe~~|Reference to 25°C, ID= -1mA<br>~~rs~~<br>~~sr~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~CE~~|–––<br>~~rs ~~<br>~~CE~~<br>~~I—|~~|––– <br> ~~rs ~~<br>~~CE~~<br>~~I—|~~<br>||0.018<br> ~~rs~~<br>~~CE~~<br>~~I—|~~<br>|||Ω<br>~~Oe~~<br>~~CE~~<br>|<br>~~ss~~|VGS= -4.5V, ID= -9.0A<br>~~CE~~<br>~~sr~~|
|||~~CE~~<br>~~I—|~~<br>~~Gs~~|––– <br>~~CE~~<br>~~I—|~~<br>|<br>~~rr~~|0.026<br>~~CE~~<br>~~I—|~~<br>||<br>~~ss~~||VGS= -2.5V, ID= -7.7A<br>~~CE~~<br>~~sr~~|
|VGS(th)|Gate Threshold Voltage<br>~~rs~~|-0.45<br>~~I—|~~<br>~~rs~~<br>~~Gs~~<br>~~Gre~~|–––<br>~~I—|~~<br>|<br>~~rs~~<br>~~rr~~<br>~~Gr~~|-1.0<br>~~I—|~~<br>| |<br>~~rs~~<br>~~ss~~|V<br>|<br>~~rs~~<br>~~ss~~|VDS= VGS, ID= -250µA<br>~~sr~~<br>~~rs~~|
|gfs|Forward Transconductance<br>~~rs~~<br>~~tk~~|19<br>~~Gs ~~<br>~~rs~~<br>~~Gre~~<br>~~tk~~|–––<br> ~~rr ~~<br>~~rs~~<br>~~Gr~~<br>~~tk~~|–––<br> ~~ss~~<br>~~rs~~<br>~~tk~~|S<br>~~ss~~<br>~~rs~~<br>~~tk~~|VDS= -10V, ID= -9.0A<br>~~rs~~|
|IDSS|Drain-to-Source Leakage Current<br>~~tk~~|–––<br>~~Gre ~~<br>~~tk~~|–––<br> ~~Gr~~<br>~~tk~~|-1.0<br>~~tk~~|~~tk~~<br>~~a~~|VDS= -16V, VGS= 0V|
|||–––<br>~~tk~~<br>~~a~~|–––<br>~~tk~~<br>~~a~~|-25<br>~~tk~~<br>~~a~~||VDS= -16V, VGS= 0V, TJ= 125°C<br>~~a~~|
||Gate-to-Source Forward Leakage<br>~~tk~~<br>~~a~~<br>~~ee~~|–––<br>~~tk~~<br>~~a~~<br>~~ee~~|–––<br>~~tk~~<br>~~a~~|-100<br>~~tk~~<br>~~a~~|~~tk~~<br>eg<br>~~PO~~|VGS= -12V<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|–––<br>~~a~~|100<br>~~a~~||VGS= 12V<br>~~PO~~|
|Qg|Total Gate Charge<br> <br>~~i~~|–––<br> ~~ee~~<br>~~i~~<br>ee|42<br>~~i~~|63<br>~~i~~|nC<br>~~PO~~|ID= -9.0A<br>VDS= -16V<br>VGS= -5.0V<br>~~PO~~|
|Qgs|Gate-to-Source Charge<br>~~i~~<br>~~ee~~|–––<br>~~i~~<br>~~ee~~<br>ee|7.1<br>~~i~~<br>~~ee~~|11<br>~~i~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|12<br>~~ee~~|18<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~<br>ee<br>ee|17<br>~~es~~|–––||VDD= -10V<br>ID= -1.0A<br>RG= 6.0Ω<br>RD= 10Ω<br>~~@~~|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee<br>~~e~~~~**e**~~<br>|36<br>~~ee~~|–––|||
|td(off)|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~e~~~~**e**~~<br>~~e~~|170<br>~~ee~~|–––|||
|tf|Fall Time<br>~~ee~~|–––<br>~~e~~~~**e**~~<br>~~e~~<br>ee|190|–––|||
|Ciss|Input Capacitance<br>~~ee ~~<br>~~ee~~|–––<br>~~e~~~~**e**~~<br> ~~e~~<br>~~ee~~<br>ee<br>ee|2940<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -15V<br>ƒ = 1.0MHz<br>~~@~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|630<br>~~ee~~|–––|||
|Crss|Reverse Transfer Capacitance|–––<br>ee|420|–––|||
## **Source-Drain Ratings and Characteristics**
|~~ee~~<br>~~—-—~~|**Parameter**<br>~~ss~~<br>~~—-—EH~~|**Min. **<br>~~ss~~<br>~~EH~~|**Typ. **<br>~~EH~~|**Max.**<br>~~EH~~|**Units**<br>~~EH~~|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~ee~~<br>~~—-—~~|Continuous Source Current<br>(Body Diode)<br>~~ss~~<br>~~—-—EH~~|~~ss~~<br>~~EH~~|~~EH~~|2.0<br>~~EH~~|~~EH~~<br>~~es~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~es~~|
|ISM<br>~~—-—~~<br>~~Rses~~<br>~~$$~~|Pulsed Source Current<br>(BodyDiode)<br>~~—-—EH~~<br>~~es~~<br>~~$$~~|~~EH~~<br>~~es~~<br>~~ss~~|~~EH~~<br>~~es~~<br>~~ss~~|-71<br>~~EH~~<br>~~es~~|||
|VSD<br>~~—-—~~<br>~~Rses~~<br>~~$$~~<br>~~a~~|Diode Forward Voltage<br>~~—-— EH~~<br>~~es~~<br>~~$$~~<br>~~ttt~~|–––<br>~~EH~~<br>~~es~~<br>~~ss~~<br>~~ttt~~|–––<br>~~EH~~<br>~~es~~<br>~~ss~~<br>~~ttt~~|-1.2<br>~~EH~~<br>~~es~~<br>~~ttt~~|V<br>~~EH~~<br>~~es~~|TJ= 25°C, IS= -2.0A, VGS= 0V<br>~~es~~<br>~~lis~~|
|trr<br>~~Rses~~<br>~~$$~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~$$~~<br>~~ttt~~<br>~~es~~|–––<br>~~es~~<br>~~ss~~<br>~~ttt~~<br>ee|180<br>~~es~~<br>~~ss~~<br>~~ttt~~<br>ee|270<br>~~es~~<br>~~ttt~~|ns<br>~~es~~|TJ= 25°C, IF= -2.0A<br>di/dt = -100A/µs<br>~~es~~<br>~~lis~~<br>@|
|Qrr<br>~~$$~~<br>~~a~~|Reverse Recovery Charge<br>~~$$~~<br>~~ttt~~<br>~~es~~|–––<br>~~ss~~<br>~~ttt~~<br>ee|300<br>~~ss~~<br>~~ttt~~<br>ee|450<br>~~ttt~~|nC||
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300µs : duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec
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1000 VGS 1000 VGS<br>TOP -4.5V TOP -4.5V<br>-3.5V -3.5V<br>-2.5V -2.5V<br>-2.0V -2.0V<br> 100 -1.5V-1.3V A 100 -1.5V-1.3V Et||<br>-1.0V -1.0V<br>BOTTOM -0.75V pit peel eS eal BOTTOM -0.75V 7<br>| ee | eee eS ee<br> 10 22a 10 e r<br>— | Peri TT i ee ee ee<br> 1 20Ft] 1 GD:ee<br>$f Fh HSfp ~~CCEtt -0.75V S e e e<br>0.1 AE 0.1 2 || ||<br>-0.75V<br>aPee a 20µs PULSE WIDTHT = 25J °C eeeie ee 20µs PULSE WIDTHT = 150J °C<br>0.01 0.01<br>0.1 1 10 100 0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS -V , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>2.0<br> 100 ID = -9.0A<br>TT eer PE ELE<br>PfeSPr<br>1.5<br>T = 150 CJ °<br> 10<br>pee” 4EEEenE8 LEELA<br>SS ee {Lb<br>1.0<br>; | V7) T = 25 CJ ft fT ° tf fT fT fT fT Tf pe? =<br>f|<br> 1 n/a PEt HH<br>=issSsssee== 0.5 CLL<br>eeeee<br>V = -15VDS<br>20µs PULSE WIDTH VGS = -4.5V<br>0.1 PPPEP EE 0.0 GORA TODA OAGEREReee<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V , Gate-to-Source Voltage (V)GS T , Junction TemperatureJ ( C)°<br>D D<br>-I , Drain-to-Source Current (A) -I , Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I , Drain-to-Source Current (A)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Normalized On-Resistance Vs. Temperature
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5000<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C SHORTEDds<br>Crss = Cgd<br>4000 | [| Coss = Cds + Cgd<br>—Re el<br>3000 Ciss<br>pe<br>eee l l<br>2000<br>ee l lll<br>1000 a<br>Coss<br>0 iSs Crss elll|<br> 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>Fig 5. Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>E T = 150 CJ ° TT<br> 10 Po AYE<br>RSETT IlTATL EGEEREEE T = 25 CJ ° rT { AE| [ [<br> 1<br>PAA PE<br>eee eee<br>0.1 nePVE FEE EL ELL V = 0 V GS<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>-V ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>SD<br>-I , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
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10<br>ID = -9.0A<br>VDS =-16V<br>e e e<br>8<br>SE ES \<br>6<br>PT tt EL ELE LY<br>PLE TT ETLALE<br>4<br>FTPT ttEL tLEL YELLpe<br>2 EL<br>eee<br>0 YililtitSERRE AREEEEitt ttE<br>0 10 20 30 40 50 60<br>Q , Total Gate Charge (nC)G<br>Fig 6. Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>= r anm a:<br> 100 C o ConrCo<br>10us<br>Sraee ec anil 100us mail<br> 10<br>Sc ilimeai meal<br>1ms<br> T TCJ = 25 C= 150 C° ° a a 10ms<br> 1 e Single Pulse e eel ilc t<br>0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>GS<br>-V , Gate-to-Source Voltage (V)<br>I , Drain Current (A) D-<br>**----- End of picture text -----**<br>
**Fig 8.** Maximum Safe Operating Area
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10.0 pi ttt tt tt Vos ve<br>8.0<br>SEE EEE ve a<br>-<br>PL AK EE re | _— + ;<br>6.0 Pp} tT PAE °°<br>COCKE ve ≤ 1<br>≤ 0.1 %<br>4.0 Pt te EEN puyracor<br>Pit ;<br>Fig 10a. Switching Time Test Circuit<br>2.0 Pit tT [EET] EE ETNTN j<br>td(on) tr td(off) tf<br>PEEP VGS a<br>0.0 10%<br>25 Pi 50 te 75 tT tT 100 yy 125 yf 150 | 7<br>T , Case TemperatureC ( C)° |<br>\ / |<br>90%<br>Fig 9. Maximum Drain Current Vs. VDS \_<br>Case Temperature<br>Fig 10b. Switching Time Waveforms<br> 100<br>D = 0.50<br>S aSSee aeell<br>0.20<br> 10<br>0.10<br>isl aseeesnneal InnNIEaINTNICTIEST: SUIT Oe sop eee eee | a<br>0.05<br>S n ere an aee<br>| 0.02 ee ee PDM<br> 1<br>= 0.01 t1<br>ee a t2<br>SINGLE PULSE Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t / t1 2<br>0.1 —ae rial PT cM 2. Peak T J = P DM x Z thJA + TA<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>D<br>-I , Drain Current (A)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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0.025 0.10 P f<br>0.08 P | |<br>\ TT<br>0.020 \ P f |<br>ID = -9.0A 0.06<br>NO e e ee ee<br>rh~~ | 0.04 E EE<br>0.015<br> = VGS = -2.5V |of<br>0.02 VGS = -4.5V<br>eee<br>T A i e<br>0.010 ee eee<br>0.00<br>2.0 2.5 3.0 3.5 4.0 4.5<br>0 10 20 30 40 50 60<br>VGS, Gate -to -Source Voltage (V)<br>-ID , Drain Current (A)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on), Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>
## **Fig 12.** Typical On-Resistance Vs. Gate Voltage
**Fig 13.** Typical On-Resistance Vs. Drain Current
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QG<br>QGS QGD<br>VG < an<br>Charge<br>**----- End of picture text -----**<br>
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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>D.U.T. +-VDS<br>VGS<br>(ay<br>-3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**Fig 14a.** Basic Gate Charge Waveform
**Fig 14b.** Gate Charge Test Circuit
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## SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>j 6 eal H --EEE D .189 .1968 4.80 5.00<br>E 0.25 [.010] A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050 BASIC 1.27 BASIC<br>e1 .025 BASIC 0.635 BASIC<br>Tr e a —— H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>ob ———— L .016 .050 0.40 1.27<br>y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>_=o C y a<br>θ<br>0.10 [.004]<br>oom 8X b A1 [ : L f 8X L An 8X c Y<br>0.25 [.010] C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER aApee<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>: 6.46 [.255] j [odd]<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>0 MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. Lid<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br> A SUBSTRATE.<br>3X 1.27 [.050] Ano 8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE
PART NUMBER
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## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
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TERMINAL NUMBER 1<br>eos) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION ss<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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330.00<br>(12.992)<br> MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04
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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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