Image not available
Illustrative purposes only
IRF7319TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.5 A, 6.5 A, 0.023 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 6.5A
- Continuous Drain Current Id P Channel: 6.5A
- Drain Source On State Resistance N Channel: 0.023ohm
- Drain Source On State Resistance P Channel: 0.023ohm
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.384 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**==> picture [206 x 88] intentionally omitted <==**
**----- Start of picture text -----**<br>
N-CHANNEL MOSFET<br>S1 1 8 D1 N-Ch | P-Ch<br>G1 2 7 D1<br>S2 3 6 D2 Vpss| 30V_ | -30V<br>G2 4 5 D2<br>P-CHANNEL MOSFET Rpgqon| 9.029 Ω | 0.058 Ω<br>Top View<br>**----- End of picture text -----**<br>
**==> picture [27 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
SO-8<br>**----- End of picture text -----**<br>
## Absolute Maximum Ratings ( T, = 25°C Unless Otherwise Noted)
**==> picture [216 x 182] intentionally omitted <==**
**----- Start of picture text -----**<br>
V<br>ID 6.55.2 A<br>2.0<br>PD<br>Symbol_| Limit<br>| Units<br>θ<br>**----- End of picture text -----**<br>
**==> picture [406 x 492] intentionally omitted <==**
**----- Start of picture text -----**<br>
∆ AV ∆ Ty | Breakd Volt T . Coeffi_ t | N-Ch| — [0.022 e Reference to 25°C, ul Ip = 1mA<br>RDS(ON) Staticatic: Drain-to-Source. Drain-to-S On-ResistOn-Resistance: “N-ch| —= |O080.032/ 0.0 2946 Ω VesVesGS = 10V,4.5V,1DIpIp == 5.8A4.7A @ ®<br>och ~— 0.042 0.058 Vas = -10V. Ip =-4.9A ©<br>Vv Gate Threshold Volt | N-Ch/| 1.0[— |0.076— | 0.098— | JES V oa s = TS) -4.5V,Ves, Ip =Ip = 250HA -3.6A ©<br>[.N-ch]| — | — | 1.0 | Vos = 24V, Ves = OV<br>I Dss Drain-to-Srain-to-Source; LeakLeakage CcCurrent |_P-ch]|iN-chi ——|| —— || -1.05 | yA VosVos = = -24V,24V. Veg Ves = = OV, OV T) = 55°C<br>‘less ___|Gate-to-Source Forward Leakage ||P-Ch|N-P | — | — |[+100]-25 nA | V oseg = -24V,+20V Ves = OV, Ty = 55°C<br>Total Gate Charge LN-Ch| — | 22 | 33 | N-Channel<br>| P-ch| — | 23 | 34 |<br>ae |.N-ch||'P-ch|—— || 2.6 38/57." | 3.9 | Ip = 8.84, Vos = 18V, Ves = 10V<br>Gate-to-Drain ("Miller") Charge eraseN-Ch| - ~ P-ChannelIp = -4.9A, Vps = -15V, Veg = -10V<br>7 ; 13 | Vpp = 15V, Ω Ip = 1.0A, Rg = 6.0 Ω,<br>|N-Ch| — | 26 | 39 |<br>Faitime “NChl— [a7 (26) | £005 ZEW. Ω b= “TOA Ro = 6.0 Ω<br>“P-ch|<br>— | 32 | 43 |_| Ro= "6<br>Css InputoesC ;it: |"P-Chl N-Ch/ — | 650 | — | N-Channel<br>__|OutputcapactanceOutput Capacitance P-Chl — | [380] | P-Channel<br>C ss o m Been — | 710) — |__|ago Vas = OV, Vos = 28V, f = 1.0MHz<br>Reverse Transfer Capacitance LN-chl — | 130] Ves = OV, Vos = -25V, f = 1.0MHz<br>Source-Drain Ratings and Characteristics<br>Parameter | ain. Typ. Max. Units. Conditions<br>Continuous Source Current (Body Diode) pw-chl — | — | 28 A<br>Pulsed Source Current (Body Diode) © ehN-Ch<br>; N-Ch| — |0.78]1.0 | Ty = 25°C, Is = 1.7A, Ves = OV @<br>Vsp Diode Forward Voltage P-Ch| — |-0.78-1.0 | Vv T, = 25°C, ls =-1.7A, Veg = OVO<br>a vy P-Ch| — | 44 | 66 | Ty = 25°C, Ip =1.7A, di/dt = 100A/us<br>Or N-Ch| — | 58 | 87 | P-Channel<br>Reverse Recovery Charge P-chi — 1 421) 63 "C | T,=25°C, p= -1.7A, dildt =<br>Notes:<br>Repetitive rating, pulse width limited by @ Pulse width ≤ 300s; duty cycle ≤ 2%.<br>max. junction temperature. ( See fig. 22 )<br>N-Channel lsp ≤ 4.0A, di/dt ≤ 74A/us, Vpp ≤ Vieryoss, Ty ≤ 150°C ® Surface mounted on FR-4 board, t ≤<br>P-Channel Isp ≤ -2.8A, di/dt ≤ 150A/us, Vpp ≤ VBR)Dss: Ty ≤ 150°C<br>N-Channel Starting Ty = 25°C, L=10mH Rg= 25 , Ω Ing= 4.0A. (See Figure 12)<br>Ω<br>**----- End of picture text -----**<br>
**==> picture [203 x 196] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br> VGS<br> TOP 15V<br> 10V<br> 7.0V<br> 5.5V<br> 4.5V<br> 4.0V es ee ee<br> 3.5V<br> BOTTOM 3.0V EY<br>Uf f7<br>10 fyi<br>| fff ff fA | | i tipo ty<br> 3.0V<br>UOiysia AAGG eeeeeeee<br> 20µs PULSE WIDTH<br> T = 25°CJ<br>1<br>0.1 1 10<br>V , Drain-to-Source Voltage (V)DS<br>I , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>
**==> picture [204 x 197] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br> VGS<br> TOP 15V<br> 10V<br> 7.0V<br> 5.5V<br> 4.5V eee<br> 4.0V<br> 3.5V<br> BOTTOM 3.0V E00 ee<br>A,fy,<br>10 |gYJ ff, rr y 3.0V a<br>UYOAZ72GGttfA ee e eeel<br> 20µs PULSE WIDTH<br> T = 150°CJ<br>1<br>0.1 1 10<br>V , Drain-to-Source Voltage (V)DS<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**==> picture [430 x 196] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 SSSa SSS SS 100 ===OO ===<br>a ee ee ee es PF | | | [| | f | fT | fT ft |<br>e T = 25°CJ e pf ft<br>T = 150°CJ<br>ee a T = 150°CJ eee<br>10 eo 10<br>| | |lUvLL IL A T = 25°CJ<br>—————aa ee ee ee ee ee ; A es| ft |AA UF TC<br>a ee ee ee es | | | Yi Af {| | | | [ ff |<br>ee ee ee ee ee ee ee ee<br>ee eee eee eee Po i FT tt<br> V = 10VDS<br>1 ee 20µs PULSE WIDTH ee A ee 1 V = 0VGS<br>3.0 3.5 4.0 4.5 5.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>V , Gate-to-Source Voltage (V)GS V , Source-to-Drain Voltage (V)SD<br>I , Reverse Drain Current (A)SD<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**==> picture [440 x 483] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 0.040<br>ID = 5.8A<br>a ean ee eee e e<br> V = 4.5VGS<br>0.036<br>CI TT} ee<br>1.5 ~/- 4+ [41] [+]<br>DUNO ONONNOU 0002200000 0 0.032 meee<br>1.0<br>CEU gg<br>TEP 0.028<br>MET) @ ff<br>0.5<br>0.024 V = 10VGS<br>re) =~§ LK [-] [op] + [o] —<br>UT E} VGS= 10V eg s<br>0.0 0.020<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40 [A]<br>T , Junction TemperatureJ ( C)°<br>I , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.12 200<br>D<br>c PTTL, Galan TOP 1.8A<br> 3.2A<br>ee 0.10 ee 160 PY TF BOTTOM 4.0A<br>& 0.08 [~o tit 4<br>§ tt 120 Nees<br>| GaN eee<br>ee 0.06 -~/ fi ft] t ) [|<br>B ~i i tT] I = 5.8AD ft) ft tf 80 NEN<br>es 0.04 oe SOW<br>ee<br>40<br>- 0.02 ee ee ee NNO<br>a LLL Com ~SKN<br>* LLLee a [Titty NeP|<br>0.00 0 SS A<br>0 3 6 9 12 15 [A] 25 50 75 100 125 150<br>V , Gate-to-Source Voltage (V)GS Starting T , Junction Temperature (°C)J<br>Ω<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>Ω<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**==> picture [436 x 474] intentionally omitted <==**
**----- Start of picture text -----**<br>
1200 20<br>V = 0V, f = 1MHzGS ID = 5.8A<br>C = C + C , C SHORTEDiss gs gd ds VDS = 15V<br>C = Crss gd<br>Waa C = C + Coss ds gd 16 ee<br>900 ING! | tt [|<br>Ciss<br>Nato SC 12 EE<br>Nae Coss PA<br>600 Al ll a<br>N O N] 8 See aaa<br>300 PO Crss I FERRE<br>4<br>TS SET] TM oeeS EE<br>0 | el A 0 A<br>1 10 100 0 10 20 30 40<br>V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>ee 0.50 eeeLe<br>0.20<br> 10<br>0.10<br>0.05<br>Seen EET eee eee enn<br>0.02 Se a elles ee PDM<br> 1<br>0.01 t1<br>t2<br>a<br>Notes:<br>SINGLE PULSE<br>tt (THERMAL RESPONSE) ee eee eee 1. Duty factor D = t / t1 2<br>a un PEMSUTEALCI 2. Peak TJ= P DM x ZthJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**==> picture [432 x 198] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 VGS 100 VGS<br> TOP - 15V ae TOP - 15V a<br> - 10V - 10V<br> - 7.0V - 7.0V<br> - 5.5V EH - 5.5V EEE<br> - 4.5V - 4.5V<br> - 4.0V PE) ee ee - 4.0V 0)<br> - 3.5V Et - 3.5V SU eeFF ee<br>10 |MA BOTTOM - 3.0V ayffZell 10 BOTTOM - 3.0V 0OZ e e<br>OF—#f AO ff fl<br>W747 ati ee el | ee<br> -3.0V<br> -3.0V<br>YyyyUZay eemail e e YKHyvonSir UT<br> 20µs PULSE WIDTH 20µs PULSE WIDTH<br>1 Wes) T = 25°CJ A 1 T = 150°CJ<br>|) E A<br>0.1 1 10 0.1 1 10<br>-V , Drain-to-Source Voltage (V)DS -V , Drain-to-Source Voltage (V)DS<br>D D<br>-I , Drain-to-Source Current (A) -I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**==> picture [430 x 197] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 oe ee ee ee ee oe 100 a oe<br>esa ee eeeeer<br>eepfee eeee e eee eee aeepf ee eee<br>T = 25°CJ<br>P| LL ee P| | CO<br>T = 150°CJ<br>T = 150°CJ<br>10 (l at . 10<br>|| UL L<br>oe ee re pf fe T = 25°CJ<br>> aa ee ee ee ee ee ee ey ee ee ee<br>VA ee ee ee ee ee ne Ae ee eee eee<br>Poet tt ne Ae eee<br> V = -10VDS<br>1 20µs PULSE WIDTH A 1 V = 0VGS<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.4 0.6 0.8 1.0 1.2 1.4<br>-V , Gate-to-Source Voltage (V)GS -V , Source-to-Drain Voltage (V)SD<br>SD<br>-I , Reverse Drain Current (A)<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**==> picture [438 x 462] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 0.6<br>ID = 4.9A<br>P Ts) FE<br>0.5<br>1.5<br>CTT) Fe [|p]<br>Sean es ee ee |<br>ee} ee 0.4 EE<br>1.0 TTT Ss@ 0.3 Po} [-—}—] |<br>ce [rT][ |] -<br>TTT) 2 [<br> V = -4.5VGS<br>0.2<br>THT) ---—4—-<br>0.5 es + ——<br>Pe 0.1 ee ee A<br> V = -10VGS<br>ET E} VGS = 10V O_O PetLe<br>0.0 Eppppap®6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0.0<br>° 0 30 [A]<br>T , Junction TemperatureJ ( C) -Ip , Drain Current (A)<br>Fig 16. Normalized On-Resistance Fig 17. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.16 300<br>IDD<br>- | fet ft Nae TOP -1.3A<br>8 250 Vf -2.2A<br>BOTTOM -2.8A<br>se 0.12 {|iy| ff Beaman<br>200<br>Pipe = e<br>§ P| KR TL fy<br>s 0.08 { IV]| |] 150 KONE<br> I = -4.9AD<br>oo o) ORS<br>100<br>§ No | SSNNNNN<br>PtLToa 0.04 | TSR<br>50<br>Popo EBSA<br>; SNe<br>PLT}<br>0.00 | fy 0 SSS<br>0 3 6 9 12 15 [A] 25 50 75 100 125 150<br>Ω<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>Ω<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**==> picture [204 x 195] intentionally omitted <==**
**----- Start of picture text -----**<br>
300<br>IDD<br>Nae TOP -1.3A<br>250 Vf -2.2A<br>BOTTOM -2.8A<br>Beaman<br>200<br>= e<br>P| KR TL fy<br>150 KONE<br>ORS<br>100<br>| SSNNNNN<br>TSR<br>50<br>EBSA<br>SNe<br>0 SSS<br>25 50 75 100 125 150<br>Starting T , Junction TemperatureJ ( C)°<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**==> picture [435 x 479] intentionally omitted <==**
**----- Start of picture text -----**<br>
1400 20<br>ID = -4.9A<br>VDS =-15V<br>1200<br>-)]Wee 16 G Pf |H E E,<br>1000 EQN |<br>Ciss<br>eel rT oT fF of ll pl<br>800 PON L Coss E 12 rT | TlUT CLAy, Td<br>600 PONT= EEE<br>8<br>PN 4<br>400 Crss<br>SEER aaitl IED naRna<br>ee 4 Pi iA | |<br>200<br>as ,._ann<br>0 eea e lle A 0 Zag<br>1 10 100 0 10 20 30 40<br>V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 20. Typical Capacitance Vs. Fig 21. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>Cy 0.500.20 TornO_o oem—e<br> 10<br>0.10<br>0.05 TTSe ee<br>aD 0.02 on PDM<br> 1 sre 0.01 e manssae >>| ii e t1<br>t2<br>ee a ee ee<br>Notes:<br>SINGLE PULSE<br>(THERMAL RESPONSE) 1. Duty factor D = t / t1 2<br>iail et LIN00 TAT| 1 2. Peak TJ = P DM x Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
## **SO-8 Package Outline**
Dimensions are shown in millimeters (inches)
**==> picture [373 x 330] intentionally omitted <==**
**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>rare E 6 H |EEE D {| .189 | {fi .1968 4.80 5.00<br>0.25 [.010] A E .1497 .1574 3.80 4.00<br>Pere 1 2 3 4 Ef e .050 BASIC 1.27 BASIC<br>L a<br>e 1 .025 BASIC 0.635 BASIC<br>TTI | ee H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X db e L .016 .050 0.40 1.27<br>FEE y 0° 8° 0° 8°<br>- e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>iaericaia 8X b A1 + fx 8X L 8X c =<br>0.25 [.010] C A B 7<br>[eT TI O<br>FOOTPRINT<br>1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENS ION: MILLIMETER<br>nae<br>3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES].<br>4. OUT LINE CONFORMS TO JEDEC OUT LINE MS -012AA.<br>5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS.<br>; UO00<br> MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS.<br> MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].<br>7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>, aon<br>00004<br>3X 1.27 [.050] a ke<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## NOTES:
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONFORMS TO JEDEC OUT LINE MS -012AA.
- 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
- 7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBST RATE.
## **SO-8 Part Marking**
EXAMPLE: THIS IS AN IRF7101 (MOS FET)
XXXX INTERNAT IONAL F7101 RECTIFIER LOGO ~~ee~~
## DATE CODE (YWW)
- P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL)
- Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASS EMBLY S ITE CODE LOT CODE
PART NUMBER
## **SO-8 Tape and Reel**
Dimensions are shown in millimeters (inches)
**==> picture [210 x 130] intentionally omitted <==**
**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>oO Oo Oo ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) _ FEED DIRECTION<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**==> picture [186 x 79] intentionally omitted <==**
**----- Start of picture text -----**<br>
330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/04
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →