IRF7317TRPBF

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 6.6 A, 6.6 A, 0.023 ohm

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: Dual MOSFETs
Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test; Available until stocks are exhausted
MSL: MSL 1 - Unlimited
SVHC: No SVHC (21-Jan-2025)
No. of Pins: 8Pins
Channel Type: Complementary N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: SOIC
Operating Temperature Max: 150°C
Power Dissipation N Channel: 2W
Power Dissipation P Channel: 2W
Drain Source Voltage Vds N Channel: 20V
Drain Source Voltage Vds P Channel: 20V
Continuous Drain Current Id N Channel: 6.6A
Continuous Drain Current Id P Channel: 6.6A
Drain Source On State Resistance N Channel: 0.023ohm
Drain Source On State Resistance P Channel: 0.023ohm

Delivery and price
Units per pack	5000
Price	0.322 €
Current stock	10+
Lead time	30 days

Datasheet

**==> picture [206 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
N-CHANNEL MOSFET<br>S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2 Vpss| 20V_ | -20V<br>G2 4 5 D2<br>P-CHANNEL MOSFET Rosjon) 0.029 Ω | 0.058 Ω<br>Top View<br>**----- End of picture text -----**<br>


**==> picture [27 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
SO-8<br>**----- End of picture text -----**<br>


## Absolute Maximum Ratings ( T, = 25°C Unless Otherwise Noted) 

**==> picture [4 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
θ<br>**----- End of picture text -----**<br>


**==> picture [406 x 492] intentionally omitted <==**

**----- Start of picture text -----**<br>
∆ ∆<br>Verypss_ Ty |Breakdown Voltage Temp. Coefficient Neh pea wee | Reference  2 oe 7 =  in’<br>Rpscon) Static:  Drain-to-Source.  On-Resistance: “N-ch| —= |O080.030/0.046 0.029 Ω VesVes = =— 4.5V,2.7V, IpIp = =— 6.0A5.2A © @<br>P-Ch | — |0.049/0.058 Ves = -4.5V, Ip = -2.9A ®<br>| — [0.082/0.098 Ves = -2.7V, Ip = -1.5A ©<br>[.N-ch]|= — | — | 1.0 | VosDS  =~ =16V, Vas21D = =7. OV<br>Ipss Drain-to-Source Leakage Current rch =| 10 yA wes = FASTA Ee<br>‘less ___|Gate-to-Source Forward Leakage |eesN-P | — | — [+100] nA | V pseg =  -16V,412V Ves = OV, Ty = 55°C<br>ae |.N-Ch|"P-ch,—— || 40/61"2.2 | 3.3 | Ip = 6.08, Vos = 10V, Ves = 4.5V<br>Gate-to-Draininci ("Miller") Charge rp-chi"N-ch| —  [62/93]17.7112 | | P-ChannelIp = -2.9A, Vps = -16V, Veg = -4.5V<br>Vpp = 10V, Ip = 1.0A, Rg = 6.0 Ω,<br>Ω<br>ta(ott) ; [N-Ch| — | 38 | 57 |<br>Turn-Off Delay Time -P-Ch — | 42 | 63 VppP-Channel= -10V, Ip = -2.9A, Rg =6.0 Ω ,<br>Ω<br>Css InputoesC ;it: |“P-Ch| N-Ch/ —— || 900780/ | ——|| VasN-Channel= OV, Vos= 18V,f = 1.0MHz<br>Reverse Transfer Capacitance oh — 200, — Ves = OV, Vos = -15V, f = 1.0MHz<br>Source-Drain Ratings and Characteristics<br>| arameter | Min, | Typ. Max | Units Conditions<br>Continuous Source Current (Body Diode) pw-chl — | — | 28 A<br>Pulsed Source Current (Body Diode) © ehN-Ch<br>; N-Ch| — |0.72]1.0 | Ty = 25°C, Is = 1.7A, Ves = OV @<br>Vsp Diode Forward Voltage P-Ch| — |-0.78-1.0 | Vv T, = 25°C, Is =-2.9A, Veg = OVO<br>ta R R Ti N-Ch| — | 52 | 77 | ,. | N-Channel<br>everse Necovery ime P-Ch| — | 47 | 71 | Ty = 25°C, Ip =1.7A, di/dt = 100A/us<br>Orr Reverse Recovery Charge NP - Cc h }| —|— | 5849] | 8673) | "© | Ty=P-Channel 25°C, Ip=-2.9A, difdt =<br>Notes:<br>Repetitive rating; pulse width limited by @ Pulse width ≤  300s; duty cycle  ≤ 2%.<br>max. junction temperature. ( See fig. 22 ) ,<br>N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/us, Vop ≤ Vierypss, Ty ≤ 150°C ® Surface mounted on FR-4 board, t ≤<br>P-Channel ISD ≤ -2.9A, di/dt ≤ -77AI/Us, Vpp ≤ V(BR)DSs: Ty ≤ 150°C<br>N-Channel  Starting Tj = 25°C, L=12mMH Rg=25 Ω , Ing=4.1A. (See Figure 12)<br>P-Channel Ω<br>**----- End of picture text -----**<br>


**==> picture [201 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>VGS a<br>TOP 7.50V<br>4.50V<br>4.00V<br>3.50V<br>3.00V<br>2.70V<br>2.00V<br>BOTTOM 1.50V OE<br>| A<br> 10<br>| fF  fiYt<br>Zt et<br>C/E ee<br>C/A 1.50V ee |<br>20µs PULSE WIDTH<br>T  = 25J °C<br> 1<br>0.1  1  10<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [203 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>VGS aoe<br>TOP 7.50V<br>4.50V<br>4.00V<br>3.50V<br>3.00V<br>2.70V<br>2.00V<br>BOTTOM 1.50V RE<br>ey<br> 10<br>[fFFi<br>Yt<br>1.50V<br>Ayia | a<br>YY Ae LL TTT<br>20µs PULSE WIDTH<br>T  = 150J °C<br> 1<br>0.1  1  10<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [429 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100  100<br>————a sooseS S===—=<br>ee ee ee ee Pt ft ft ft tT ft tT tt fe tf<br>|| T  = 25  CJ ee ° ee ee ee PF | tT tT | Et tT Tt<br>T  = 150  CJ ° T  = 150  CJ °<br>a le | Pt tT | ty TT | ee<br> 10  10<br>a ee e e eee<br>7 7 A es es a 4 4 ee<br>27 E+} ft<br>yf a| tTee 2 Pt | YP T7T | tT ft tT ft<br>T  = 25  CJ °<br>7 ee ee eee WV RRA<br>V      = 10VDS<br>20µs PULSE WIDTH V      = 0 V GS<br> 1  1<br>1.5 2.0 2.5 3.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>V     , Gate-to-Source Voltage (V)GS V     ,Source-to-Drain Voltage (V)SD<br>I   ,  Drain-to-Source Current (A)D I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**==> picture [440 x 479] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 0.032<br>ID = 6.0A<br>P ong Pf LK |<br>1.5<br>NO n 0.028 e n<br>ELEETLELE) —_[<br>oP<br>1.0 ee} [|] og5 |<br>Hee [LT]<br>ce) 2 0.024 fo<br>0.5<br>TTT) TT<br>0.0 STARA aS) VGS ee = 4.5V =ee 0.020 fel es a a<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 [A]<br>T  , Junction TemperatureJ (  C)°<br>I   , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.05 300<br>2 ID<br>TOP 1.8A<br>250 3.3A<br>BOTTOM 4.1A<br>PP 0.04 te Eee<br>: ne<br>200<br>PA) a<br>© R o<br>g 0.03 ft Wet by} 150 EMR eee EE<br>Doe] PINE | Et<br>| 100 Nk<br>5 0.02 {| PNET} Reese<br>oDa 50 SOS<br>» ho} ESSA<br>é 0.01 Let ft ft } A 0 eenESS~ae<br>0 2 4 6 8 25 50 75 100 125 150<br>V       , Gate-to-Source Voltage (V)GS  Starting T  , Junction TemperatureJ (  C)°<br>Ω<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>Ω<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**==> picture [437 x 474] intentionally omitted <==**

**----- Start of picture text -----**<br>
1600 V      = 0V,         f = 1MHzGS 10 ID = 6.0A<br>C      = C     + C     ,   C     SHORTEDC      = Ciss         gs         gd         dsrss         gd VDS = 10V<br>S s C      = C     + Coss        ds         gd L 8 rar<br>1200 [Nc | pit tt hf<br>ss NE E e<br>6<br>Se COCA<br>800 NG se SEGRREnD Zann<br>KN 4 Pitt<br>ss EE<br>eA tt yet<br>400<br>2<br>T ONE) i oeFund<br>0 | al A 0 AREEESEEEeEe<br>1 10 100 0 5 10 15 20 25 30<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>RR 0.50<br>0.20<br> 10<br>ae 0.10 eersteee |<br>0.05<br>= ST<br>0.02 a eae ee PDM<br> 1 a ct) at |<br>0.01 t1<br>t2<br>Seer SINGLE PULSE eee ee Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>a ti i E SLUtTE 2. Peak TJ= P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**==> picture [433 x 474] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100 VGS  100 VGS<br>TOP -7.50V TOP -7.50V<br>-4.50V -4.50V<br>-4.00V -4.00V<br>-3.50V-3.00V ae -3.50V-3.00V aeee<br>-2.70V -2.70V<br>-2.00V 1 Aa -2.00V | |-Aa<br>BOTTOM -1.50V BOTTOM -1.50V<br> 10  10<br>| GF | lati oT TT ae 2. Peee<br>-1.50V<br> 1 -1.50V  1<br>PAC Za =<br>a aa ee ee<br>ee ee eee a, ae eeee<br>a 20µs PULSE WIDTHT  = 25J °C | 20µs PULSE WIDTHT  = 150J °C<br>0.1 0.1<br>0.1  1  10 0.1  1  10<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics<br> 100 SSS  100 EEE EEE<br>BRREEEER eeee ee ee<br>an T  = 25  CJ ° EEE EEA HE T  = 150  CJ ° RR<br>PO Bes lann  10 T T RAS<br>er T  = 150  CJ ° r SEnnEy.4.6888<br> 10 A)eaeyaa | SaESS so FARa T  = 25  C aa J ° e =ee<br> 1<br>CAEeEeE E e<br>es oe ee oe eeee<br>| titsd eeSSSee ee ee ee eee<br>V      = -10VDS<br>20µs PULSE WIDTH Sa s ee V      = 0 V GS<br> 1 eee 0.1 ee ee ee eee eee eee<br>1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>-V     , Gate-to-Source Voltage (V)GS -V     ,Source-to-Drain Voltage (V)SD<br>D D<br>-I   ,  Drain-to-Source Current (A) -I   ,  Drain-to-Source Current (A)<br>D SD<br>-I   ,  Drain-to-Source Current (A) -I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [443 x 479] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 PPP TTT) = 0.8 ET TT<br>1.5 PEPEEEEEEEY e= 0.6 tt<br>SPELT Derry ee fp | r| | e<br>1.0 0.4<br>A s | | | | ft |<br>Bn ie 5<br>0.5 ayTTP 2[o} 0.2 EE<br>PER EEE Pe EL pt tt<br>0.0 PEPPEEEVd EEL) V__ = -4.5V A @e 0.0 ELDEEREELAa |<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 4 8 12 16 20 [A]<br>T   , Junction Temperature (°C)J - -| D , Drain Current (A)<br>Fig 16. Normalized On-Resistance Fig 17. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.08 400<br>ID<br>es eee ee ee Pf] TOP -1.3A<br>-2.3A<br>ee 0.07 | BOTTOM -2.9A<br>ee Lf<br>300<br>0.06<br>ee ee ee \<br>200<br>eg ee ee<br>ee) 0.05 oo ee NKR<br>e | | | Kf) ANON<br>100<br>0.04<br>5 | | IX | SSE<br>eee [| fT oT™NSS SK|<br>0.03 ed ee A 0 poSSL<br>0.0 2.0 4.0 6.0 8.0 25 50 75 100 125 150<br>V       , Gate-to-Source Voltage (V)GS  Starting T  , Junction TemperatureJ (  C)°<br>Ω<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>Ω<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**==> picture [433 x 477] intentionally omitted <==**

**----- Start of picture text -----**<br>
1400 V      = 0V,         f = 1MHzGS 10  I    = -2.9AD<br>am C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds Pop TT<br>1200 C      = Crss         gd<br>aN C      = C     + Coss        ds         gd 8 LE E<br>7<br>1000<br>s<br>>of cccccceennpe<br>6<br>800<br>NEE, ss  See TTT TTP IAT<br>ee ll VA<br>600 NNNE Sl 4 Pt PTT TT | Ay PTA TT<br>400<br>ss<br>pg| ep 2 P| ty 7 |<br>200<br>eee ee ee  eee<br>0 Prete Fo A 0 Yiiii ti tif<br>1 10 100 0 5 10 15 20 25 30<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 20. Typical Capacitance Vs. Fig 21. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>A 0.50 N<br>0.20<br> 10<br>0.10<br>i 0.050.02 iiTT7220 TI| I P I DM<br> 1<br>0.01 t1<br>S ee t2<br>ses SINGLE PULSE ea se Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>0.1 ailPt an UUETMTIT 2. Peak T J= P DM x  Z thJA + TA<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

**==> picture [291 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A : 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>fas E e) 6  _ 0.25 [.010] H A ———— ET=———= DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X o e d b SST L .016 .050 0.40 1.27<br>EF y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C iE<br>y<br>0.10 [.004]<br>Setati 8X b A1 c f — 8X L 4 8X c 4<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER aie<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>: | Q0G0<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>: 3X 1.27 [.050] oc 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~ 

DATE CODE (YWW) 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

**==> picture [177 x 277] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>e666) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br> 330.00<br>2 (12.992)  MAX. \/<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

- NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/04

Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →