IRF7313TRPBFXTMA1

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S1 1 8 D1<br>G1 2 7 D1 Voss = 30V<br>S2 3 6 D2<br>G2 4 5 D2 Rpgion) = 0.029 Ω<br>Top View<br>**----- End of picture text -----**<br>


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Absolute Maximum Ratings ( T, = 25°C Unless Otherwise Noted)<br>Maximum<br>Symbol | __ 30 |<br>V<br>#20<br>Continuous Drain Current© Ta = 29°C ID po SH<br>Ta = 70°C 5.2<br>30<br>25<br>. rer Ta = 25°C 2.0<br>PD<br>Mesmum Foner Desenin ise] gs<br>**----- End of picture text -----**<br>


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Parameter————=(Min.[Typ.[Max.<br>[Viempss[| [Units] Conditions ‘|<br>∆ ∆<br>F Vass Ty_|Drain-to-Source[Breakdown VoltageBreaklownTemp. CoefficientVottage  || 30 |0.022|——| — — || Vi°CV || Vas=OV,lp=Reference to 25°C,250AIn=1mA<br>Ω<br>Feson [Site Oaninsoure Onsestany | |—Togsfaods| __Ves=aSV b= 478<br>[Vase [= [o.03200.046<br>Transconductance————=s[—-|<br>fasse [Forward[Gate [ewesnnatamecnes] Threshold Votage «(1.0|14|——|—-|[[—— | SV ||fsaeVos=15V,lp=58AVos=Ves lo=na 250Asorrcee—<br>‘lossGss [ Gaieenurce Gateto-Source Rows Leanne [fazeSr: | nA heecey<br>(|<br>Sgfa; |TetaiGate ChargR e verse Leakage || 22—|| -100 33 || t= BBA<br>[Oy ——fesetsnoe tore Sef Sa we [wets<br>Rion | Gate-to-Drain (Willer) Charge [| 64[96 |__| Vas= 10V, See Fig. 100<br>'(RiseTime——SSS~=~“—~‘“*~*~s*SCY CB lp = 1.08<br>ff _[Turn-On Delay Time «|| 81| 12 Voo = 18V<br>Ω<br>fon __|TummOff Delay Time ——=SSS*d | (28 | 88 R= 60<br>SSCs Ω<br>[Css fe siFaliTime | 28 Ro=15 @<br>[Coss [Input Capacitance ——~=S~«*d | 080] Vas = OV<br>[Crs [ ReverseOutput  TransferCapacitanceCapacitance~~~||| 190,820 — | pF | Vos=25Vf= 1.0MHz, See Fig.8<br>Source-Drain Ratings and Characteristics<br>| Is | Continuous Parameter Source Current | Min. |Typ. [Max. [Units] [Conditions] MOSFET symbol D<br>G<br>Io Pulsed Source Current A integral reverse<br>[Veo__[Diode Forward Voltage === —— [078 [ 10 | V [T= 25°C, ls=17A Ves=OVO | S<br>**----- End of picture text -----**<br>


≤ ≤ ≤ ≤ 150°C 

Rg=25_ Ω , lag= 4.0A. 

≤ 300ys; duty cycle ≤ 2%. on FR-4 board, t ≤ 

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100  TOP           15V ves}<br>                   10V<br>                   7.0V                   5.5V eeee<br>                   4.5V<br>                   4.0V ee eee<br>                   3.5V<br> BOTTOM   3.0V<br>10<br>| V7 \  3.0V<br>|‘ Gfff7 = SO<br>Uf) | ea<br>Y/ sa AG eee<br>Ly A eee<br>CAMS ell<br>1 Test  T   = 25°CJ<br>0.1 1 10<br>V      , Drain-to-Source Voltage (V)DS<br>I    , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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100 vess—f<br> TOP           15V<br>                   10V<br>                   7.0V                   5.5V eeee<br>                   4.5V<br>                   4.0V eee<br>                   3.5V<br> BOTTOM   3.0V<br>10<br> 3.0V<br>| {yr 4 —-<br>— _—f fff a on<br>| fF 7A<br>|\#fffp$fy<br>Y ppm ee<br>V Js<br>7 |aa  T   = 150°CJ<br>1<br>0.1 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100 esa ee ee eee 100 eeeeeee<br>ee es ee pa<br>pt ee es P| | | [ | fT 7 [ | T 7 |<br>T  = 25°CJ<br>T  = 150°CJ<br>ee pf T  = 150°CJ ff<br>10 ao 10 | b ger<br>T  = 25°CJ<br>.—=—— | | | |llUhLet LU AA<br>es ee ne Ae A<br>ee ee es YT | | Y{f fT | [ | fT 7<br>ee ee ee ee | | [Tf [fi | tt<br>ee ee eee eee | fy ft ft<br> V     = 10VDS<br>1 | | suseuse wor A 1 PA| A<br>3.0 3.5 4.0 4.5 5.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>V     , Gate-to-Source Voltage (V)GS V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.0 0.040<br>ID = 5.8A<br>C o] = F777<br>0.036<br>ELT} gL<br>1.5<br>Pree] & fe<br>0.032<br>1.0 CPP beer b e s) © ea<br>et e<br>TTT} 2 0.028 Ee<br>TULLE) BE<br>0.5<br>0.024<br>ETE) &— P toe<br>0.0 EC E VGS= 10V | e@ 0.020 « | ep[ [fy<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)° 0 10 20 30 40 [A]<br>I   , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.12 200<br>> PC T LLILLLL_LL Gana TOP            1.8A<br>                   3.2A<br>gs 0.10 ft fo fo 160 BOTTOM    4.0A<br>see 0.08 ffPOLtftoT eee ena<br>ee ee ee ee 120 AF<br>s 0.06 | ee fyee<br>s [WPL tT | GENES eee<br>80<br>ee 0.04 SL  _ NEV<br>= ee A SNOW<br>— ~T)INT LS 40 P NNR<br>5 0.02 ~ |.  oeee SALA<br>esee 0.00 eda an 0 PP PT tLASAKON SS A<br>0 3 6 9 12 15 [A] 25 50 75 100 125 150<br>V       , Gate-to-Source Voltage (V)GS  Starting T  , Junction Temperature (°C)J<br>Ω<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>Ω<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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1200 20<br>V      = 0V,         f = 1MHzGS ID = 5.8A<br>C      = C     + C     ,   C     SHORTEDC      = Ciss         gs         gd         dsrss         gd VDS = 15V<br>C      = C     + Coss        ds         gd 16<br>900 INEN ptee ee {|e|<br>s<br>CN S TOE<br>12<br>\OK ss<br>600<br>Pt PU PS| LUI TEaee<br>8<br>NN pit iyi tt<br>Poh FEE<br>300 ss<br>4<br>P S T) “EERE<br>0 a7Sel A 0 oeA |<br>1 10 100 0 10 20 30 40<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>0.50<br>Seppeeestieee esata Setafl<br>a a a em<br>0.20<br> 10<br>0.10<br>0.05<br>See EET nee eee en<br>0.02 Se eles PDM<br> 1<br>e 0.01 reTIN | t1<br>t2<br>Sessa al Notes:<br>SINGLE PULSE<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>a ili et LUI00 PUTT| 2. Peak TJ = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A = 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>r E e) 6 ar e 0.25 [.010] H A Soe SE===== DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X q e d b SST L .016 .050 0.40 1.27<br>EF y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>Toygi 8X b A1 o f — 8X L 4 8X c 4<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER aie<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>: | OOG0<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] ne 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~ 

DATE CODE (YWW) P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>oO666) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ed FEED DIRECTION a<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 

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