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IRF7307TRPBF
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.2 A, 5.2 A, 0.05 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vg
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (08-Jul-2021)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 5.2A
- Continuous Drain Current Id P Channel: 5.2A
- Drain Source On State Resistance N Channel: 0.05ohm
- Drain Source On State Resistance P Channel: 0.05ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.362 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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N-CHANNEL MOSFET<br>S1 1 8 D1 N-Ch | P-Ch<br>G1 2 7 D1<br>S2 3 6 D2 y DOV SV<br>G2 4 5 D2 DSS :<br>P-CHANNEL MOSFET<br>Top View Ω Ω<br>Rpg(on) | 0.050 |0.090<br>**----- End of picture text -----**<br>
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SO-8<br>**----- End of picture text -----**<br>
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> ∆ Vi(BR)DSS ∆ Ty; ~~J~~ Breakd ~~reakaown~~ Volt ~~Voltage~~ T ~~|!emp~~ . Coeff ~~oetlicien~~ a t ~~IN-Ch]peel —— [0.044]pl —— | rc~~ ° ~~ReferenceReference toto 25°C,25°C,D~~ Ip ~~Ip =-1mA= 1mA~~ RDS(ON) || Staticaticcpati Drain-to-SDrain-to-Source; On-ResistOn-Resistance. ochN- ~~“T= chlL_—_|r— |T——— [0.050[0.0700.090~~ Ω ~~Vas=45V.VasVos == 4.5V,2.7V,~~ 2 Ip ~~Ip[p= =2.2A@= 2.6A 222A @~~ Viss Gate Threshold Volt ~~IN-Ch||0.70/— | —— |0.140| — | VesVos == Ves,-2.7V,IpIp= =250A-1.8A@~~ Gis F ~~orward———e—e~~ dT ~~Transconductance~~ duct: ~~IN-Ch/IP-ch[4.00][P-ch[-0.70|8.30;~~ ~~**—** —~~ ~~**|** | ——— 1||~~ Y_| ~~s~~ ~~**V** Voe=-18V,os=os= Ves,15V,InloIn=-2.2A@== -250pA2.6A®~~ I | F ~~IN-Ch||P-Ch]| —— || —— || -1.0|1.0 | VpsVos == -16V,16V, VesVes== OVOV,~~ |!0ss | Drain-to-S:rain-to-Source LeakLeakage Cc Curren t ~~IN-ch||P-Ch| — | — 125 |~~ yA ~~Vos= 16V, Ves= OV. 1)= 125°C Gate-to-Source Forward Leakage [N-P | —— || —— |[+100]-25 | | VesVos ==+12V -16V, Vas = OV, Ty = 125°C Qg Total Gate Charge ho~~ | N-Channel ~~INech|~~ Qgs ~~= [= [22],~~ | Ib 2 8A. Vos= 18V, Ves = 4.8V ~~Gate-to-Source Charge IP-chl — | — 133)~~ nc | Qga ~~nC chp— [—[eo]~~ | P-Channel ~~Gate-to-Drain ("Miller") Charge lp-chl — | — 19.0 Ip = -2.2A, Vps = -16V, Veg = -4.5V taon) Turn-On Delay Time Rett~~ | N-Channel ‘ ~~INecn[— [42 [—~~ **|** Yon 1M. Ω In 2.68. Ra= 6.0 Ω, Fase time ~~Pcp— [26 [—]~~ . | Roms ~~IN-ch[~~ ta(ott) ~~— [32 [=]~~ "* | ‘ ~~Turn-Off Delay Time ip-ch|INech[—— 1511[ot [|]— 1~~ || fooP-ChannelTOV Ω Ibs 2.20, Ro= 60 Ω
> Fall ~~Internal~~ Time ~~P-ch[—[33 [— |__| Ro= 48 Internal Drain~~ Source ~~Inductace~~ Inductance ~~[N-P|[N-P|—— |[60]4.0 | —— | |”~~ , | ~~and~~ Between ~~center~~ lead ~~of~~ tip ~~die contact Ciss Input Capacitance Pept — fet~~ | N-Channel Coss ~~IN-Ghl— [280[—~~ | **_** | Vos" 0V: Vos = 18V. f= 1.0MHz ~~Output Capacitance P-ch| — [3101 — |~~ pF | Ciss ~~Ich]— [rao —]~~ |G Chenvet ~~Reverse Transfer Capacitance 5-Ch —70T Ves = OV, Vps = -15V, f = 1.0MHz~~ Source-Drain Ratings and Characteristics ~~Parameter Min. | Typ. |Max. | Units Conditions Is Continuous Source Current (Body Diode) eet =} — {a8~~ A | ~~Isu Pulsed Source Current (Body Diode) © Rett fat | IN-ch|~~ Vsp ~~— | — [1.0]~~ | ~~[T= 25°C, [p= 1.8A, Vog= OVO Diode Forward Voltage [P-ch] — | — |-1.0| T)= 25°C, Is=-1.8A, Veg = OV @~~
> tr ~~Reverse Recovery Time~~ ; ~~IN-Ch]|P-Ch| —— || 2956 || 4484 ||~~ ns TyN-Channel= 25°C, Ip =2.6A, di/dt = 100A/us
> Or ~~Reverse Recovery Charge IN-Ch] =H— | 22 | 33fio]| "° | t=~~ P-Channel ~~25°C, Ip = -2.2A, difdt = 100A/us ton Forward Turn-On Time N-P| Intrinsic turn-on time is neglegible (turn-on is dominated by~~ Notes: Repetitive rating; pulse width limited by © Pulse width ≤ 300us; duty cycle ≤ 2%. max. junction temperature. ( See fig. 23 ) N-Channel Isp ≤ 2.6A, di/dt ≤ 100A/Us,Vpp ≤ Veerypss, Ty ≤ 150°C © Surface mounted on FR-4 board, t ≤ ≤ ≤ ≤ ≤
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1000<br> TOP 7.5V<br> 5.0V<br> 4.0V<br> 3.5V<br> 3.0V<br> 2.5V<br> 2.0V<br> BOTTOM 1.5V<br>100<br>| eI<br>10<br>1.5V<br>1 T = 25°CJ<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>I , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>
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100 a<br>Sea age T = 25°CJ e= ac<br>T = 150°CJ<br>A WO |<br>10<br>A<br>f---SEESES<br>f7i | | | ct dtc rT rT TT TT<br>/AGRE RE Eee<br> V = 15VDS<br>1 || cnuspunse won A<br>1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>V , Gate-to-Source Voltage (V)GS<br>3. Typical Transfer Characteristics<br>1200<br>V = 0V, f = 1MHzGS<br>C = C + C , C SHORTEDiss gs gd ds<br>C = Crss gd<br>C = C + Coss ds gd<br>900<br>s<br>S S<br>et ||<br>NX |<br>600<br>ss<br>Se<br>300 S ss OT<br>ae e as <<br>0 ell l<br>1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>I , Drain-to-Source Current (A)D<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
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1000<br> TOP 7.5V<br> 5.0V<br> 4.0V<br> 3.5V<br> 3.0V<br> 2.5V<br> 2.0V<br> BOTTOM 1.5V<br>100<br>nn Aan<br>10<br>1.5V<br>1 T = 150°CJ<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>I , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>
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2.01.5 H ARE<br>HD eaat<br>1.0<br>eae<br>0.50.0 CPCeead a<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction Temperature (°C)J<br>Fig 4. Normalized On-Resistance<br>Vs. Temperature<br>10<br> I = 2.6AD<br> V = 16V DS<br>8<br>a an<br>6 PP PT A<br>4 EE<br>Sane eenee<br>2<br>PPA<br>0 PoFel SEE FIGURE 11 ersstencun<br>0 5 10 15 20 25<br>Q , Total Gate Charge (nC)G<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>GS<br>V , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
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100<br>————<br>pf __{ _j __}___<br>10<br>| | | err<br>T = 150°CJ<br>p f<br>1 T = 25°CJ<br>Sn) /se eEeee<br>SS<br>=<br>0.1 FH - A<br>0.0 0.5 1.0 1.5 2.0 2.5<br>V , Source-to-Drain Voltage (V)SD<br>Fig 7. Typical Source-Drain Diode<br>Forward Voltage<br>6.0 Pt tT | tT | |<br>5.0 A<br>pS TT TT<br>4.0 PURSE<br>ptt | cA TT TT<br>3.0 See eae<br>See eeeNEe<br>2.0 See eee<br>Pt tT | tT TT | TN<br>1.0 Pte tT | tT | tT | TA<br>| [| | Et ETT LY<br>0.0 Pit | i | tt tt<br>25 50 75 100 125 150<br>T , Case TemperatureC ( C)°<br>I , Reverse Drain Current (A)SD<br>I , Drain Current (A)D<br>**----- End of picture text -----**<br>
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Current Regulator<br>Same Type as D.U.T.<br>rn<br>| [.] 50KΩ<br>| 12V .2µF<br>.3µF<br>|<br>+<br>D.U.T. -VDS<br>VGS<br>3mA tJNE IG [ ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
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100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>a<br>A<br>100us<br>poset peaetaktea y |||<br> 10<br>A<br>1ms<br>S eesRE 2500eteee Sart mEh<br>eet eee<br> T TAJ = 25 C= 150 C° ° 1 il 10ms Hill<br> 1 Single Pulse a ae<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>I , Drain Current (A) D<br>**----- End of picture text -----**<br>
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+<br>-<br>~<br>)+4.5V<br>≤ 1<br>Pulse Widths ≤ 0.1 %<br>: r<br>ee<br>Fig 10a. Switching Time Test<br>V90%DS fi<br>x<br>10% /\<br>VGS I Kt [/]<br>td(on) tr td(off) tf<br>Fig 10b. Switching Time<br>45v-— — - QG -— —— 2<br>iF QGS * QGD *<br>VG<br>Charge<br>**----- End of picture text -----**<br>
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100<br> TOP - 7.5V<br> - 5.0V<br> - 4.0V<br> - 3.5V<br> - 3.0V<br> - 2.5V<br> - 2.0V | Zeer<br> BOTTOM - 1.5V<br>10<br>1<br> -1.5V<br>0.1 Gf| || T = 25°CJ ruse mond<br>0.01 0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100<br> TOP - 7.5V<br> - 5.0V<br> - 4.0V<br> - 3.5V<br> - 3.0V<br> - 2.5V<br> - 2.0V LT A<br> BOTTOM - 1.5V<br>10<br>1<br> -1.5V<br> 20µs PULSE WIDTH<br>0.1 Y UL | j T = 150°CJ<br>0.01 0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100 fs — — — —<br>SeeeeeESe>———= T = 25°CJ T = 150°CJ<br>10<br>5S, 4ec eo eaeoee<br>1 oy seca eens<br>PSSGes eeeeeeeeee SSS<br> V = -15VDS<br>0.1 PET<br>1.5 2.0 2.5 3.0 3.5 ae nse 4.0 wend 4.5 5.0<br>-V , Gate-to-Source Voltage (V)GS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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2.0<br>pl =-3.6A<br>1.5<br>PEELE EEE EL<br>1.0 petft<br>pean<br>0.5 PEELEOO OTERUATORROUEEL EL<br>0.0 ODEO OH<br>-60 PETA -40 -20 TANA 0 20 ANAT 40 60 D 80 ROS 100 120 140 160<br>T , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
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1500 V = 0V, f = 1MHzC = C + C , C SHORTEDGSiss gs gd ds 10 I = -2.2A V = -16VD DS<br>C = Crss gd<br>C = C + Coss ds gd 8<br>s<br>1000<br>6<br>ss<br>SFE<br>NEA aanen74en<br>s 4<br>500<br>PO N IES py<br>sea ay 4neen<br>2<br>PTT NIN>Til Suny TT 4e5nnn<br> SEE FIGURE 22<br>0 1 PAN 10 Ll 100 A 0 0 [EE 5 10 Pretec 15 20 25<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
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100<br>a<br>po<br>10<br>PT yy T = 150°CJ Pe<br>T = 25°CJ<br>= > 2 aae =<br>1 piPZ A|<br>_—<br>PAR<br>0.1 PY A<br>0.3 0.6 0.9 1.2 1.5<br>-V , Source-to-Drain Voltage (V)SD<br>Fig 18. Typical Source-Drain<br>Forward Voltage<br>5.0 PT TE TT Tt tT<br>4.0 Mit tT Tt tt<br>PN EE EE<br>3.0<br>SEReNGREEe<br>PTT PNT<br>2.0 SERRE RNEE<br>BREEN<br>1.00.0 PPEREPY PY<br>25 50 75 100 125 150<br>T , Case TemperatureC ( C)°<br>SD<br>-I , Reverse Drain Current (A)<br>D<br>-I , Drain Current (A)<br>**----- End of picture text -----**<br>
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20. Maximum Drain Current Vs.<br>Ambient Temperatu Current Regulator re<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>l ] i .3µF<br>D.U.T. +-VDS<br>VGS<br>-3mA tuAVN IG | ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
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100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>ee<br>ES<br>A| ee<br> 10<br>ASC aren<br>1ms<br>SSSPEE So imeriiSEH<br>e e<br> T TAJ = 25 C= 150 C° ° ' 10ms<br> 1 1 Be Single Pulse li 10 nl n 100<br>-V , Drain-to-Source Voltage (V)DS<br>19. Maximum Safe Operating Area<br>Rp<br>Vv°°<br>Ves DUT.<br>Re | -<br>+<br>~ Voo<br>sy<br>Pulse With ≤ 1 ys<br>≤ 0.1 %<br>Duty Factor<br>°<br>Fig 21a. Switching Time Test Circuit<br>V90%DS fi<br>10% /\ /\<br>VGS<br>td(on) tr td(off) tf<br>Fig 21b. Switching Time Waveforms<br>45ye-— — QG —~——— 2<br>iF QGS * QGD *<br>VG<br>Charge<br>I , Drain Current (A) D-<br>**----- End of picture text -----**<br>
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100<br>PS D = 0.50 errr<br>r 0.20 r ttt<br> 10 so r ermeme EfTh<br>0.10<br>0.05<br>eee eat mene >=: cate nna ee Lt<br>0.02<br>PDM<br>0.01<br> 1 = sereEYTTd<br>SINGLE PULSE t1<br>cea n (THERMAL RESPONSE) ee ee e ee Notes: t2<br>1. Duty factor D = t / t1 2<br>a 2. Peak T J = P DM x Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
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D.U.T + Circuit Layout Considerations<br>™ • Low Stray Inductance<br>@ • Ground Plane<br> • Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Kk<br>Re • dv/dt controlled by Rg +<br>• -<br>•<br>**----- End of picture text -----**<br>
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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode Forward Drop<br>® Inductor Curent e<br>Ripple ≤ 5%<br>**----- End of picture text -----**<br>
## SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>jeg 6 H === D .189 .1968 4.80 5.00<br>E 0.25 [.010] A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050 BASIC 1.27 BASIC<br>e1 .025 BASIC 0.635 BASIC<br>Te a ao H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>ot ot L .016 .050 0.40 1.27<br>y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>ro C y a<br>0.10 [.004]<br>coo 8X b A1 l [ - Lin 8X L 8X c 4<br>0.25 [.010] C A B e 7<br>FOOTPRINT<br>NOTES:<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER ar<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. r dong<br>6.46 [.255]<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br> A SUBSTRATE.<br>; 3X 1.27 [.050] oe 8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~
DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE
PART NUMBER
## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
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TERMINAL NUMBER 1<br>eos) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )7.9 ( .312 ) | FEED DIRECTION a<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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330.00<br>(12.992)<br> MAX.<br>VY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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