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IRF7306TRPBF
Dual MOSFET, P Channel, 30 V, 30 V, 3.6 A, 3.6 A, 0.1 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.6A
- Continuous Drain Current Id P Channel: 3.6A
- Drain Source On State Resistance N Channel: 0.1ohm
- Drain Source On State Resistance P Channel: 0.1ohm
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.361 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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S1 1 8 D1<br>G1 CIT+| 2 4co | 7 {IT] D1 Dss<br>S2 3 6 D2<br>G2 an 4 ce) rT 5 D2 Ω<br>on-++NEyY Lian Rpsvon) =0.10<br>Top View<br>**----- End of picture text -----**<br>
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SO-8<br>**----- End of picture text -----**<br>
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∆ ∆<br>Rps(on) Static Drain-to-Source On-Resistance |= | — [0.101 Ω Ves = -10V, Ip = -1.8A @<br>_—|—|016| Ves = -4.5V, Ip = -1.5A ©<br>Gate Threshold Voltage | -1.0|-—|-—]| v_ | Vps = Vos, Ip = -250HA<br>Forward Transconductance |25|-——|-——| s | Vos = -24V, Ip = -1.8A<br>loss Drain-to-Source Leakage Current | — | — | -1.0| HA Vos = -24V, Ves = OV<br>| --- | --- | -25 | Vos = -24V, Ves = OV, Ty = 125°C<br>nA<br>less Gate-to-Source Forward Leakage | -—- | — |-100| Ves = -20V<br>[Qg___| Gate-to-Source Reverse Leakage | —- | — | 100 | Ves = 20V<br>lQgs Total Gate Charge _—|—| 25 | | lp = -1.8A<br>Qua | : Ga tte-te- to- DrainSource("MilleCha r ")geCharge | - —- - | — - || 299.0 | nC | V po s = - 10V,24V See Fig. 6 and 12 ®<br>ff<br>ft Turn-OnRiseTimeDelay Time —| 11 |—|] Vop = -15V<br>Turn-Off Delay Time =|7 [|] | to = 1.88 Ω<br>Ω,<br>Fall Time |---|2518 [=|— | ™ | R p=8.2o=60 See Fig. 10<br>D<br>Lp Internal Drain Inductance — , 40 ;— .<br>nH | Between lead tip G<br>Ls Internal Source Inductance — 60 ;— | and center of die contact<br>S<br>input Capacitance [0<br>Output —] _ | Ves= ov<br>Ciss ReverseCapacitanceTransfer Capacitance [==—— [200| 93 [=]|-—— pF | f Vos = 1.0MHz, = -25v See Fig. 5<br>Source-Drain Ratings and Characteristics<br>Parameter Min. | Typ. |Max.| Units Conditions<br>Is Continuous Source Current 25 MOSFET symbol D<br>(Body Diode) A | showing the<br>G<br>I SM Pulsed Source Current | integral reverse<br>(Body Diode) © —|—| 4 p-n junction diode. S<br>**----- End of picture text -----**<br>
≤ ≤
> ISD ≤ -1.8A, di/dt ≤ 90A/us, Vop ≤ Verypss; @® Surface mounted on FR-4 board, t ≤ ≤
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100<br> TOP - 15V St<br> - 10V<br> - 8.0V<br> - 7.0V<br> - 6.0V<br> - 5.5V 7<br> - 5.0V<br> BOTTOM - 4.5V<br>ay Ze<br>GRaI R<br>10 -4.5V<br>ee ////, a<br>ae) /A ee |<br>| Aff |<br>Up |\| |<br>1 Dvr T = 25°CJ<br>0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100 eS |<br> TOP - 15V<br> - 10V<br> - 8.0V<br> - 7.0V<br> - 6.0V<br> - 5.5V |Pee<br> - 5.0V<br> BOTTOM - 4.5V<br>bf<br>| oeaul HI<br>10<br> -4.5V<br>G Y<br>Rey)i<br>ey) Aaee eeell)<br>ay Ae eel<br> 20µs PULSE WIDTH<br> T = 150°CJ<br>1<br>0.1 1 10 100<br>-V , Drain-to-Source Voltage (V)DS<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100 apfee oe oe 2.0 P fl =-3.0Al EE<br>ee<br>T = 25°CJ<br>FERS EES 1.5 PLE EEE<br>P| tT ye T = 150°CJ ><br>P| heer al<br>10 DY ZAGER 1.0<br>ER ee tnt)<br>Pat<br>—_———======—Aee [re][ ee] ee ee ee eee eee bet| LE<br>PEE EEE EEE 0.5 FLEE<br>PoP [tt] EE EEE<br>pif itt yy EEE<br> V = -15VDS<br>1 LF | ene use mor A 0.0 GORERAGE RD ROBEESSERA<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V , Gate-to-Source Voltage (V)GS T , Junction Temperature (°C)J<br>(Normalized)<br>D<br>-I , Drain-to-Source Current (A)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
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1000 20<br>V = 0V, f = 1MHzGS I = -3.0AD<br>C = C + C , C SHORTEDiss gs gd ds V = -24VDS<br>C = C<br>rss gd<br>800 eea C = C + Coss ds gd | 16 eee| ot [ft]<br>er | PL ft<br>600 s 12<br>PSoneNene i PL LAE<br>ss<br>400 8<br>| | Pe HP ee a<br>NONE pf<br>200 s 4<br>pg eh ee AA ae<br> FOR TEST CIRCUIT<br>a SSll aeAnan SEE FIGURE 12<br>0 A 0<br>1 10 100 0 5 10 15 20 25<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 == = eee 100 = nan<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>——— =,<br>10 pf fp S e e<br>|__| iy A<br>T = 150°CJ 100us<br> 10<br>PVT a 4 A h Perettiee ee eets ll<br>ee [en] 7 T = 25°C if J | | | | ee ~~ ~<br>1<br>tf ee ee 1ms e e<br>Pr al<br>———— Es e<br>eeee eee T TCJ = 25 C= 150 C° °<br>10ms<br>0.10.0 CO 0.3 0.6 0.9 E 1.2 1.5A 1 1 Single Pulse ill 10 ll 100<br>-V , Source-to-Drain Voltage (V)SD -V , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>I , Drain Current (A) D-<br>SD<br>-I , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
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4.0 CE TET ETT Ye<br>PARE “es (your<br>3.0<br>-<br>+<br>Pt SONEE Re | Voo<br>2.0 PE ENE LE 310 1<br>uty Factor 0.1 %<br>PE ye ELEN oo<br>1.0 PTT TT Ty IN | Fig 10a. Switching Time Test Circuit<br>VDS<br>OCC N 90% —<br>0.0<br>25 50 75 100 125 150<br>°<br>PE LET T , Case TemperatureC EL T ] ( C) | X \/<br>10% /\_\<br>Fig 9. Maximum Drain Current Vs. VGS t eee| d(on) tr \ td(off) om tf<br>Ambient Temperature<br>Fig 10b. Switching Time Waveforms<br> 100<br>P D = 0.500.20 oor<br> 10 e rr<br>= 0.10 err a<br>0.05<br>e ee<br>0.02<br>PDM<br>0.01<br> 1 = re [c] Do [ee] SINGLE PULSE TCAinhCCHLL i t1<br>el PT (THERMAL RESPONSE) eee ess eekead SS t2<br>T T Notes:<br>Pt [TT] EE 1. Duty factor D = t / t1 2<br>a | 2. Peak T J = P DM x Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>D<br>-I , Drain Current (A)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF .3µF<br>LI ; | a<br>QGS QGD D.U.T. +-VDS<br>VGS<br>V | G 7 G&S<br>-3mA<br>oral IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>
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D.U.T + Circuit Layout Considerations<br>™ • Low Stray Inductance<br>® • Ground Plane<br> • Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>kK<br>®<br>• +<br>Re dv/dt controlled by Rg<br>• -<br>• D.U.T. - Device Under Test<br>‘ > Ispcontrolled by Duty Factor "D"<br>* Reverse Polarity for P-Channel<br>** Use P-Channel Driver for P-Channel Measurements<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. nd Period _t<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt fs<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode Forward Drop<br>® Inductor Curent<br>a<br>Ripple ≤ 5% ]<br>**----- End of picture text -----**<br>
## SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A = 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>=S=== b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>rar E 0 6 eci os 0.25 [.010] H A Pee ee DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4<br>e .050 BASIC 1.27 BASIC<br>e1 .025 BASIC 0.635 BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X q e d b SST L .016 .050 0.40 1.27<br>ETE y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>peeda 8X b A1 e f= — 8X L * 8X c 4<br>0.25 [.010] C A B 7<br>FOOTPRINT<br>NOTES:<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER aApee<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>r boon<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br> A SUBSTRATE.<br>3X 1.27 [.050] ne 8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~
DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE
PART NUMBER
## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
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TERMINAL NUMBER 1<br>oO666) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ed FEED DIRECTION a<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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330.00<br>(12.992)<br> MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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