IRF7303TRPBFXTMA1

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S1 1 8 D1<br>G1 _| 2 | ) a 7 Lo D1<br>S2 3 6 D2<br>G2 “T] 4 (at Pr 5 D2<br>a<br>Top View<br>**----- End of picture text -----**<br>


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Ω<br>**----- End of picture text -----**<br>


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SO-8<br>**----- End of picture text -----**<br>


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∆ ∆<br>Ω<br>Rpsion) Static Drain-to-Source On-Resistance |= | | 050 Ves = 10V, Ip = 2.4A ©<br>Gate |——- |— .080 Vas = 4.5V, Ip = 2.0A @<br>Threshold Voltage 11.0 |—- |—— | V_ | Vos = Ves, Ip = 250HA<br>Forward Transconductance }5.2[—-|—-[ s | Vos = 15V, Ip = 2.4A<br>loss Drain-to-Source Leakage Current |— |— |10 | HA Vos = 24V, Ves = OV<br>Gate-to-Source | |— | 25 | Vos = 24V, Vas = OV, Ty = 125 °C<br>nA<br>less Forward Leakage | -—- |-——- | 100 | Ves = 20V<br>Gate-to-Source Reverse Leakage | -—— |—- |-100 | Ves = - 20V<br>IQs | TotalGate-to-SourceGate ChargeCharge | -—- || — - || 2 59 | nC |2-248Vps = 24V<br>IQga_—_'|_ Gatte-to-Drain ("Miller") Charge |-— |—- | 7.9 | Ves = 10V, See Fig. 6 and 12 ®<br>fi‘ RiseTimeTurn-On Delay TimeSS SSS™S~S~S|—ft| 68 |—|| | Vooto = 24= 15V<br>Turn-Off Delay Time [| Ω<br>Ω,<br>FallTime F=Tr722 [ —=|| ~ | Re=6.0__|Ro=62_SeeFig. 100 D<br>Lp Internal Drain Inductance — ;}40 ;— .<br>nH | Between lead tip G<br>Ls Internal Source Inductance — ;60 ;— | and center of die contact<br>Outputinput Capacitance [— [520 |—— [Ves= ov S<br>Ciss ReverseCapacitanceTransfer Capacitance P=—— [180| 72  [=]|-—— pF | f Vos =  = 1.0MHz,  25v See Fig. 5<br>Source-Drain Ratings and Characteristics<br>Parameter Min. | Typ. |Max.| Units Conditions<br>Is Continuous Source Current 25 MOSFET symbol D<br>(Body Diode) A | showing the<br>I SM Pulsed Source Current | integral reverse G<br>—j|—| 70 p-n junction diode. S<br>**----- End of picture text -----**<br>


≤ ≤ 

ISD ≤ 2.4A, di/dt ≤ 73A/Us, Vpp ≤ Verypss; @® Surface mounted on FR-4 board, t ≤ ≤ 

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1000                    VGS 1000                    VGS<br> TOP           15V  TOP           15V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   7.0V                    7.0V<br>                   6.0V                    6.0V<br>                   5.5V 0a |                    5.5V 0<br>                   5.0V                    5.0V<br> BOTTOM   4.5V  BOTTOM   4.5V<br>100 100<br>eet ee alll ee tt a<br>Zoe es —<--- el<br> 4.5V<br> 4.5V<br>aayT i l noe” .———ee<br>10 10<br>Vee | oo” 000 oe<br>1 GRRic  T   = 25°CJ A 1 c a  T   = 150°CJ<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 |eeR| | ee| | ee| aee 2.0 PPrl «=4.0AELy<br>pH T  = 25°CJ 1.5 P L<br>Pp ee T  = 150°CJ aT<br>| | W e rae<br>nayy,  /deeeeeee 1.0 PLE er EEL<br>f 7 | I a<br>we|) eR<br>0.5<br> V     = 15VDS<br>10 Af n sous PULSE WIDTH A 0.0 HAHAHPP EL fv to<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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1000<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>C      = Crss         gd<br>800 C      = C     + Coss        ds         gd<br>= EE<br>s<br>600 ~so<br>ss<br>400<br>200 ss<br>Pome reeba<br>0 ee||<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5. Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>100 —————————<br>=== Se<br>es es ee<br>10<br>|__|<br>== T  = 150°CJ ae<br>ee Vi, T  = 25°CJ<br>1 PL 7 r e<br>ff, tf<br>SSS S====<br>ee<br>0.1 P oPeE Ew A<br>0.0 0.5 1.0 1.5 2.0 2.5<br>V     , Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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20<br> I    = 2.4AD<br> V     = 24V DS<br>16<br>Soe<br>12<br>8<br>4<br>| ot A/<br>0 /Ant |}     SEE FIGURE 12 renter onc<br>0 5 10 15 20 25<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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 100<br>s OPERATION IN THIS AREA LIMITED nes<br>BY RDS(on)<br>So<br>ee) |<br>A eh<br>100us<br> 10 ORES<br>a A<br>=a is<br>eo THT 1ms<br>CH H H<br> T TAJ = 25  C= 150  C° °<br>10ms<br>C  Single Pulse O R N<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


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5.0 NE EE Vos>A<br>4.0<br>PONT ves AA<br>+<br>CTE co | -<br>3.0 pit} ENE »<br>Pt tT TT INE J tov ≤ 1<br>≤ 0.1 %<br>2.0 pet tT TTT IN ouyracey<br>1.0 PPP ep yy Fig 10a. Switching Time Test Circuit<br>VDS<br>90%<br>PtPEEPtt tyty<br>0.0  PEEP Tr |<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>|<br>10%<br>VGS<br>Fig 9. Maximum Drain Current Vs. td(on) ™ tr . t es d(off) tf<br>Ambient Temperature<br>Fig 10b. Switching Time Waveforms<br> 100<br>D = 0.50<br>rw<br>Baa 0.20  ee<br> 10 r r<br>0.10<br>0.05<br>See east mene e a=: cece al ements |<br>0.02<br>me cee are ce PDM<br>0.01<br> 1 p ot SINGLE PULSE est t1<br>e (THERMAL RESPONSE) eeelesse ead SS t2<br>ce la<br>a ee ee Notes:<br>1. Duty factor D = t   / t1 2<br>PL P P 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>QG 50KΩ<br>12V .2µF<br>Te [] alist .3µF<br>A le QGS i QGD —» a ia | I D.U.T. +-VDS<br>VG VGS<br>3mA<br>Charge<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| I - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>6 H D .189 .1968 4.80 5.00<br>iad E ’ 0.25 [.010]  A = EERE E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>— ===<br>e1 .025  BASIC 0.635  BASIC<br>i i=aae H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>aoe oo L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010]  C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. y [Fong] an<br>°      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. aan<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] te 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

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XXXX<br>INTERNATIONAL F7101<br>RECTIFIER<br>LOGO<br>**----- End of picture text -----**<br>


P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>oOO 0) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ed FEED DIRECTION a<br> 330.00<br>2 (12.992)  MAX. \/<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 

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