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IRF7105TRPBF
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 3.5 A, 3.5 A, 0.083 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 25V
- Drain Source Voltage Vds P Channel: 25V
- Continuous Drain Current Id N Channel: 3.5A
- Continuous Drain Current Id P Channel: 3.5A
- Drain Source On State Resistance N Channel: 0.083ohm
- Drain Source On State Resistance P Channel: 0.083ohm
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.226 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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N-CHANNEL MOSFET<br>S1 1 8 D1<br>G1 =on+WNey 2 He 7 “on D1 N-Ch | P-Ch<br>3 6<br>S2 a Le D2 Voss | 25V | -25V<br>G2 | 4 a J 5 D2 Ω Ω<br>Co} P-CHANNEL MOSFET A | Rosoon) | 0.10 | 0.25<br>Top View 3.5A_| -2.3A<br>; EE 2<br>> ~<br>Hi<br>val!<br>SO-8<br>**----- End of picture text -----**<br>
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∆ Vv(BR)Dss_ ∆ Ty; Ty; Breakd Breakdown Voltage Voltage T: Temp. . Coeffi Coefficien a t IN-Ch|IP-chl —— }o.0150.030] —— || viec fe ReferenceReference toto 25°C,25°C, 2 IpIp == -1mA1mA<br>|| RDS(ON) || Staticatic e cts Drain-to-SDrain-to-Sourcerecs On-ResistOn-Resistance N-Choch “Chr |tr —— T0.16/025]Jo14 0.083] [0.16] 0.10 | Ω VesVesVas=-10V== 4.5V,10V, : Ip IpIp===-1.0A1.0A0.50A @@@<br>| — [0.30 | 0.40 | Ves = -4.5V, Ip = -0.50A @<br>Vvss Gate Threshold Volt [N-Ch| 1.0 | — | 3.0 | Vos = Ves; Ip = 250HA<br>———e—e [P-ch[-1.0[<br>Dts F dT duct IN-Ch| — | 4.3— [-3.0| — | Y | Vos =Vas,= 15V, lI p = -23. 5 0uAA @<br>orward Transconductance ip-chl — 13.11 —_ s Vos =-15V, [p= -35A @<br>| IN-Ch] — | — | 2.0 | Vps = 20V, Vas = OV<br>I | Drai |P-Ch| — | — | -2.0 | Vos = -20V, Vas = 0V<br>| Dss | Drain-to-Srain-to-Source LeakageLeakage C Current IN-chl — | — 125 | yA Vos = 20V, : Vas = OV, : T) = 55°C<br>Gate-to-Source Forward Leakage [N-P|[P-Ch| —— || —— |[+100]-25 | | VesVos ==+20V-20V, Ves = OV, Ty = 55°C<br>Qg Total GateCharge Po a be | N-Channel<br>Qgs Gate-to-Source Charge IN-ch[— [4.7 : [— | ,nc | IDA 98 Vos = 12.8¥ Vas = 10V Q<br>[P-Ch|— | 1.9 | — | "~ |<br>in (Miller Neck<br>Qga — stp — | chen<br>Gate-to-Drain ("Miller") Charge lp-ch) —}28| — | Ip = -2.3A, Vps = -12.5V, Veg = -10V<br>taon) Turn-On Delay Time Rete | N-Channel<br>Vpp = 25V, Ip = 1.0A, Rg = 6.0 Ω,<br>t, Rise Time IN-Ch| —[9.0[ 20; | Poe Ω<br>tacoft) t Turn-Off Fal ae Ti Delay Time PentINChl—— [25fae |[50]oo | || NonP-ChannelASV. Ω ID=-10A,Ro= 6.0 Ω<br>p-ch[<br>Internal — [37 [so |__| Ro=28<br>Internal Source Drain Inductace Inductance [N-P[N-P|| —— |[60]4.0 | —— | |” 1, | Between package and lead center , 6mm of (0.25in.)from die contact<br>Cc Ciss oss Output Input Capacitance Capacitance IN-Ch|et— [250Bat| — | || VesN-Channel= OV, Vps= 15V, f = 1.0MHz<br>p P |P-Ch] — | 210] — | pF | P-Channel<br>Ciss Reverse Transfer Capacitance | Ves = OV, Vps = -15V, f = 1.0MHz<br>Source-Drain Ratings and Characteristics<br>Parameter Min. | Typ. |Max. | Units Conditions<br>Is Continuous Source Current (Body Diode) Relat [ae A |<br>Isu Pulsed Source Current (Body Diode) © Reta tts |<br>Vsp , IN-Ch|— | — [14.2] y [Ty= 25°C, Is = 1.3A, Ves = OV<br>Diode Forward Voltage [P-ch| — | — [-1.2| Ty = 25°C, ls =-1.3A, Veg = OVO<br>tr Reverse Recovery Time ; IN-Ch|P-cnl —— [6s| 36 | | 54100 || ns T=N-Channel 28°C, Ir = 1.34, di/dt = 100A/ys 5<br>Orr IN-Ch| — | 41 | 75 | -Channe<br>ton ForwardReverse RecoveryTurn-On Time Charge N-P| Intrinsic— [0 turn-on [790] time"©is|neglegible T= 25°C,(turn-on p= -1.3A,is dominateddifdt = 100A/usby Lg+Lp)<br>Notes:<br>@® Repetitive rating; pulse width limited by © Pulse width ≤ 300us; duty cycle ≤ 2%.<br>max. junction temperature.<br>@ N-Channel ISD ≤ 3.5A, di/dt ≤ 90A/Us, Vpp ≤ Vieryoss, Ty ≤ 150°C @® Surface mounted on FR-4 board, t ≤ 10sec.<br>P-Channel ISD ≤ -2.3A, di/dt ≤ 90A/us, Vpp ≤ VBR)Dss: Ty ≤ 150°C<br>2 www.irf.com<br>**----- End of picture text -----**<br>
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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA 7<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
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+<br>ov -<br>≤ 1<br>≤ 0.1 %<br>muse With ys<br>Dut Fact :<br>Fig 10a. Switching Time Test<br>V90%DS J si<br>x<br>10% /\<br>VGS \< re >| mle ><br>td(on) tr td(off) tf<br>Fig 10b. Switching Time<br>;ov-- —- — QG —-——__——<br>iF QGS QGD "<br>VG<br>Charge<br>**----- End of picture text -----**<br>
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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>| ] I .3µF<br>D.U.T. +-VDS<br>VGS<br>-3mA tuANT IG | ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
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-<br>+<br>. .<br>tov ≤ 1<br>≤ 0.1 %<br>PulseDuly Factor Width = ys<br>;<br>Fig 21a. Switching Time Test Circuit<br>VDS<br>90%<br>——<br>10% /\<br>VGS<br>td(on) tr td(off) tf<br>Fig 21b. Switching Time Waveforms<br>40V-—- — - Q - G —<br>iF QGS * QGD *<br>VG<br>Charge<br>**----- End of picture text -----**<br>
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100<br>PS D = 0.50 emer<br>r 0.20 E ttt<br> 10 er<br>= 0.10 [sor] meme Th<br>0.05<br>T e<br>0.02<br>PDM<br>0.01<br> 1 = CsereoE TTCIR e e<br>SINGLE PULSE t1<br>cea (THERMAL RESPONSE) ee ee ee Notes: t2<br>1. Duty factor D = t / t1 2<br>a 2. Peak T J = P DM x Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
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D.U.T + Circuit Layout Considerations<br>™ • Low Stray Inductance<br>@ • Ground Plane<br> • Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Kk<br>®<br>Re • dv/dt controlled by Rg +<br>• -<br>• D.U.T. - Device Under Test<br>‘ > Isp controlled by Duty Factor "D"<br>* Reverse Polarity for P-Channel<br>** Use P-Channel Driver for P-Channel Measurements<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode Forward Drop<br>® Inductor Curent ee ee<br>Ripple ≤ 5% [ ]<br>**----- End of picture text -----**<br>
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## SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A : 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>fas E e) 6 _ 0.25 [.010] H A ———— SE=———= DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4<br>e .050 BASIC 1.27 BASIC<br>e1 .025 BASIC 0.635 BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X g e d b SST L .016 .050 0.40 1.27<br>Et y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>C iE<br>y<br>0.10 [.004]<br>Sane ati 8X b A1 c ( f 8X L —4 8X c 4<br>0.25 [.010] C A B 7<br>FOOTPRINT<br>NOTES:<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER aie<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>: | OOOC<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br> A SUBSTRATE.<br>3X 1.27 [.050] tne 8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW = WEEK INTERNATIONAL F7101 A = ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO ~~ee~~
PART NUMBER
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## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
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TERMINAL NUMBER 1<br>e666) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>NOTES:<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>p (12.992) MAX. \/<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
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NOTES :<br>**----- End of picture text -----**<br>
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1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04
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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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