IRF7104TRPBF

Dual MOSFET, P Channel, 20 V, 20 V, 2.3 A, 2.3 A, 0.19 ohm

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Manufacturer: INFINEON
Product type: Dual MOSFETs
Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltag
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: -
Qualification: -
Transistor Case Style: SOIC
Operating Temperature Max: 150°C
Power Dissipation N Channel: 2W
Power Dissipation P Channel: 2W
Drain Source Voltage Vds N Channel: 20V
Drain Source Voltage Vds P Channel: 20V
Continuous Drain Current Id N Channel: 2.3A
Continuous Drain Current Id P Channel: 2.3A
Drain Source On State Resistance N Channel: 0.19ohm
Drain Source On State Resistance P Channel: 0.19ohm

Delivery and price
Units per pack	5000
Price	0.264 €
Current stock	200+
Lead time	30 days

Datasheet

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G1S1 12 87 D1D1 Voss = -20V<br>S2 3 6 D2 Ros(on) -= 0.250 Ω<br>G2 4 5 D2 Ip =-2.3A<br>Top View<br>**----- End of picture text -----**<br>


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θ<br>Rx ___| Maximum Junctioio-Ambient<br>www.irf.com<br>**----- End of picture text -----**<br>


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 ∆ ∆<br>Ω<br>Rps(on) Static Drain-to-Source On-Resistance [== [0.19 [0.25 | Ves = -10V, Ip = -1.0A ©<br>Gate | — [0.30 |0.40 | Vas = -4.5V, Ip  = -0.50A ©<br>Threshold Voltage |-1.0 |—- |-3.0 | V_ | Vos = Ves, Ip = -250HA<br>Forward Transconductance }-—- [25 |—-|[ s | Vos = -15V, Ip = -2.3A ©<br>loss Drain-to-Source Leakage Current |— |— |-2.0 | HA Vos = -16V, Ves = OV<br>Gate-to-Source | ——- |-—- | -25 | Vos = -16V, Ves = OV, Ty = 55 °C<br>nA<br>less Forward Leakage | -—- |-——- |-100 | Ves = -12V<br>[Qg Gate-to-Source Reverse Leakage | -—— |—- | 100 | Ves = 12V<br>IQs | TotalGate-to-SourceGate ChargeCharge | —-— [93| 1.6 ||-—25 | nc | VosIp = -2.3A= -10V<br>IQga_—_'|_ Gatte-to-Drain ("Miller") Charge |-—— | 3.0 |-— | Ves = -10V ®<br>fi; «df [RiseTime—SSS~S~S] Turn-On Delay Time [— [12 | 40 | Voo = -10V<br>Turn-Off Delay Time [|| 1 | AO] | ty = 1.08 Ω<br>Ω<br>FallTime Tso42 [ 90s0 | ~|| R eo = 6.010 @ D<br>Lp Internal Drain Inductance — ;}40 ;— .<br>nH | Between lead,6mm(0.25in.) G<br>Ls Internal Source Inductance — }60 ;— | from. package and center<br>of die contact S<br>Input Capacitance |--- [290 | — | Vos = OV<br>Ciss Output CapacitanceReverse Transfer Capacitance =——— [210| 67  [=]|—- pF | f vos = =1.0MHz  -15v<br>Source-Drain Ratings and Characteristics<br>Parameter Min. | Typ. |Max.| Units Conditions<br>Is Continuous Source Current 50 MOSFET symbol D<br>(Body Diode) A | showing the<br>I SM Pulsed Source Current | integral reverse G<br>(Body Diode) © —|—|%2 p-n junction diode. S<br>**----- End of picture text -----**<br>


≤ ≤ 

ISD ≤ -2.3A, di/dt ≤ 100A/Us, Vpp ≤ Verpss: ® Surface mounted on FR-4 board, t ≤ Ty ≤ 150°C 2 

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-<br>+<br>:<br> 1<br>≤ 0.1 %<br>pi ti tot<br> 10a. Switching Time Test<br>td(on) tr td(off) tf<br>VGS<br>10% \ / V<br>90% \ /\<br>VDS Lo/<br>**----- End of picture text -----**<br>


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 100<br>B D = 0.500.20 ai<br> 10<br>= 0.10 s reI|<br>0.05<br>= oa om 0<br>0.02<br>PDM<br> 1 = 0.01 S [Doe] T [TLL] eet te<br>epee i SINGLE PULSE t1<br>(THERMAL RESPONSE) t2<br>a e e<br>Notes:<br>en ee ee eee<br>1. Duty factor D = t   / t1 2<br>a 2. Peak TJ= P DMx  ZthJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>-10V .3µF<br>E QGS Q E GD ! aa D.U.T. +-VDS<br>VG VGS<br>-3mA<br>Oram IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@ •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>EB :<br>0<br>•   +<br>Re dv/dt controlled by Rg<br>•<br>-<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent e<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


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## RE TIOSP OF **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- eee b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>j 6 ae H a D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A ———— E .1497 .1574 3.80 4.00<br>| 1 2 3 4 [|er—ars] oe e .050  BASIC 1.27  BASIC<br>1 es<br>-——— pf e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oh Pao L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>fr tf ff ft<br>e1 K x 45°<br>A<br>4 -O C |<br>y<br>0.10 [.004]<br>dhe 8X b o A1 n X S L 8X L 8X c Tf<br>0.25 [.010]  C A B 7<br>le} [TT]]<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>ane<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>Too<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| iid<br>003<br>3X 1.27 [.050] — oe<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~m~~ e 

DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

- A =  ASSEMBLY SITE CODE 

- LOT CODE 

PART NUMBER 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>oOo 6<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

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Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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