IRF7103TRPBF

Dual MOSFET, N Channel, 50 V, 3 A, 0.13 ohm

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Manufacturer: INFINEON
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Transistor Case Style: SOIC
Operating Temperature Max: 150°C
Power Dissipation N Channel: 2W
Power Dissipation P Channel: -
Drain Source Voltage Vds N Channel: 50V
Drain Source Voltage Vds P Channel: -
Continuous Drain Current Id N Channel: 3A
Continuous Drain Current Id P Channel: -
Drain Source On State Resistance N Channel: 0.13ohm
Drain Source On State Resistance P Channel: -

Delivery and price
Units per pack	12000
Price	0.176 €
Current stock	1000+
Lead time	30 days

Datasheet

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S1 1 8 D1<br>G1 aea 2 ae(at! | 7 ee D1 Voss = 50V<br>S2 3 6 D2 Ω<br>G2 7]od 4 fa 5 Lo D2 Rpg(on) = 0.130<br>Ip =3.0A<br>Top View<br>SO-8<br>**----- End of picture text -----**<br>


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θ<br>Rx<br>**----- End of picture text -----**<br>


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∆ ∆<br>Ω<br>Rpscon) Static Drain-to-Source On-Resistance |= [0.11 [0.13 | Ves = 10V, Ip = 3.04 @<br>Gate | |0.16 [0.20 | Ves = 4.5V, Ip = 1.58 @<br>Threshold Voltage 11.0 |—- |3.0 | V_ | Vos= Ves, Ip = 250HA<br>Forward Transconductance |-- [38 |—-[ s | Vos = 15V, Ip = 3.0A ©<br>loss Drain-to-Source Leakage Current |— |— |20 | HA Vos = 40V, Ves = OV<br>Gate-to-Source | ——- |-—- | 25 | Vos = 40V, Ves = OV, Ty = 55 °C<br>nA<br>less Forward Leakage | -—- |-——- | 100 | Ves = 20V<br>[Qg Gate-to-Source Reverse Leakage | -—— |—- |-100 | Ves = - 20V<br>IQs | TotalGate-to-SourceGate ChargeCharge |}—- |[ 1 .22 ||-—30 | nc | Vpslp = 2.0A= 25V<br>IQga_—_'|_ Gatte-to-Drain ("Miller") Charge |-— | 3.5 |-— | Ves = 10V ®<br>ft; ‘| [RiseTime——SSS~S~S] Turn-On Delay Time | | 9.0 | 20 | Voo = 25V<br>Turn-Off Delay Time [|BO] ZO] | t= 1.0 Ω<br>Ω<br>FallTime [2545 [ 57 0 | ~|| R eo = 6.025 @ D<br>Lp Internal Drain Inductance — ;}40 ;— .<br>nH | Between lead,6mm(0.25in.) G<br>Ls Internal Source Inductance — }60 ;— | from. package and center<br>of die contact S<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>**----- End of picture text -----**<br>


≤ ≤ 

≤ ≤ ≤ ≤ 

≤ 

## International TOR Rectifier 

## IRF7103PbF 

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q oY |22<br>= femal<br>E Yoo77<br>< ||| AARY ZeaeeiionenY Zeaeeiionen Zeaeeiionen<br>ae<br>5 [+ Ae =<br>S |}—- yn<br>© t+ Ae<br>6mee,mee, YE240240<br>AN))<br>° -4 Vos, Drain-to-Source0 Drain-to-Source00 Voltage (volts)11<br>**----- End of picture text -----**<br>


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q oY |22 ear || | Uy<br>= femal gf Ys<br>E Yoo77 Ee Yantl<br>< ||| AARY ZeaeeiionenY Zeaeeiionen Zeaeeiionen J& ys YetYZ<br>ae a eee 7 oe ee<br>5 [+ Ae = 5 Fo gy ry<br>S |}—- yn Oo | TT gy ii<br>© t+ Ae = | ger<br>6mee,mee, YE240240 sé | 1 HwUy |i<br>AN)) “1G.Zi.<br>° -4 Vos, Drain-to-Source0 Drain-to-Source00 Voltage (volts)11 ° -41 Vbs; Drain-to-Source0 Voltage (volts)1<br>Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,<br>Pit [it] ty tba eg© 2.5Pee-<br>z Saaanpe saat ott ttt TT TT<br>E / oan e EE ETT tT} Tt tty<br>$ Wn Se. tt Tt | tt pe<br>ae xc ON<br>: vo ae 74GREEEeee |2210Attt EEEEEEDat  Zantt<br>SES5 a GREECE<br>Se, Ae ee<br>4AtePTPtew 10 BEE6 -60| [{TTT] -40 -20 0 20E40T T 60 80tttTs100 120 140 160<br>Ves, Gate-to-Source Voltage (volts) Ty, Junction Temperature (°C)<br>**----- End of picture text -----**<br>


Fig 3. Typical Transfer Characteristics 

Fig 4. Normalized On-Resistance Vs. Temperature 

## IRF7103PbF 

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600 al CogVos ==OV,Cgs f +=Cgq,1MH“Cas SHORTED<br>sof Hs 7 fae<br>eS<br>uu~ meNeto<br>S:VESSeSo<<br>BL 300 NOSa —_<br>a.5: {teat<br>200<br>oO eat ><br>o PSK<br>SeeERS<br>r EA<br>Jt EHH<br>10° tL 40! Pr<br>Vps, Drain-to-Source Voltage (volts)<br>**----- End of picture text -----**<br>


- Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 

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International<br>TER Rectifier<br>ge °° Pos=25VIp = 2A BRR<br>g Pi tT eT TT<br>= Ee<br>opge tititi |ayy<br>3BS Pit tT Tv4<br>8oO Li [tity] t tf<br>oO Z)<br>$s Li [tie] tt |<br>Eg Ee<br>i)<br>8 ET<br>ee<br>3 0 4 8 SEE12 FIGURE16 12 20<br>Qg, Total Gate Charge (nC)<br>**----- End of picture text -----**<br>


- Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 

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402 pr rere<br>~_ 10! Ft FTF OPERATION IN THIS AREA LIMITED tHHtH<br>i a ee eeoe 5-4 BY Rpg (oN) HH<br>FESR =a / oo<br>< FPP yTy yyy Ty @ fH CAPT<br>§f +44 + Ea teTL| I<br>5 ti [l[7ITF7L] | | S10 SSSSSS Bees<br>oa 150°C / / —o §EISPH ES<br>ee oe oO5 ANLA TNT AWNee ail<br>28o eePAPeeRA AR| seee 4ee ee 0§cS , L ESSAUUMUIIIN1 ENOSUaLUTLL<br>& FAA H+ eS ssi ese stai eesti ai<br>~ |e {| FE ty tt if i a<br>3BOaTY06 0.8 4.0TT1.2 1.4 1.6 OTeeBS2 5 4 2 ea§ 49 2 8 4q22BB eniill8 493<br>Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts)<br>**----- End of picture text -----**<br>


- Fig 7. Typical Source-Drain Diode Forward Voltage 

Fig 8. Maximum Safe Operating Area 

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+<br>-<br>N )t 40V<br>≤ 1<br>fp tt A Pulse Width ≤ 0.1 % us<br>TT TP rin steed<br>tt tt | IN Fig 10a. Switching Time Test Circuit<br>i [ttt]<br>VDS<br>es ee eettlee ty<br>90%<br>tt tt tT tt yA |<br>ti tt | | | |<br>50 75 400 125 150 |<br>Ta, Ambient Temperature (°C) 10%<br>Fig 9.   Maximum Drain Current Vs. VGS |\« >< >|| «he<br>Ambient Temperature td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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 100<br>a ES _<br>R D = 0.50 oo Et<br>0.20 ee a et ee eee<br> 10<br>0.10<br>0.05<br>SS i an0 en9 eaee 0 ddOY<br>0.02<br>PDM<br> 1 0.01 —T<br>pene sii SINGLE PULSE eT t1<br>Pama (THERMAL RESPONSE) [ye TT t2<br>ee e e Notes:<br>a ee ee e eee<br>1. Duty factor D = t   / t1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>QG 50KΩ<br>12V .2µF<br>Te [] alist .3µF<br>A le QGS i QGD —» a ia | I D.U.T. +-VDS<br>VG VGS<br>3mA<br>Charge<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| I - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) 

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TERMINAL NUMBER 1<br>oO Oo 0<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>|  330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010

Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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