Image not available
Illustrative purposes only
IRF7101PBF
Dual MOSFET, N Channel, 20 V, 3.5 A, 0.1 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 3.5A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.1ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.208 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [198 x 81] intentionally omitted <==**
**----- Start of picture text -----**<br>
S1 1 8 D1 _<br>G1 LL 2 (at! LS 7 D1 Voss = 20V<br>S2 3 —— 6 D2 Ω<br>G2 “T]Co 4 SeyGt Pr 5 D2 Rps(on) = 0.10<br>Ip=3.5A<br>Top View<br>**----- End of picture text -----**<br>
**==> picture [27 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
SO-8<br>**----- End of picture text -----**<br>
**==> picture [26 x 22] intentionally omitted <==**
**----- Start of picture text -----**<br>
θ<br>[Rus<br>**----- End of picture text -----**<br>
**==> picture [413 x 491] intentionally omitted <==**
**----- Start of picture text -----**<br>
∆<br>Ω<br>Static Drain-to-Source On-Resistance [== |— |o.10 | Ves = 10V, Ip = 1.84 @<br>Gate |——- |— [0.15 | Ves = 4.5V, Ip = 1.0A @<br>Threshold Voltage 11.0 |—- |3.0 | V_ | Vos= Ves, Ip = 250HA<br>Forward Transconductance 111 [—-;|—-[ s | Vos = 15V, Ip = 3.5A ©<br>Drain-to-Source Leakage Current |— |— [20 | HA Vos = 20V, Ves = OV<br>Gate-to-Source |-—- |— [250 | Vos = 16V, Vas = OV, Ty = 125 °C<br>nA<br>Forward Leakage | — |— | 100 | Ves = 12V<br>Gate-to-Source Reverse Leakage | — | — ]|-100 | Ves = - 12V<br>| Total Gate Charge | |— | 15 | lp = 1.8A<br>|| Gat te-te-t o- DrainSource("MilleCha r ")geCharge |-— —- |—- | 32 . 60 | nc | V oe s = 1 06 V<br>Turn-On Delay Time | | 7.0 |— | Vop<br>——SSS~S—S<br>| RiseTime = 10V<br>Turn-Off Delay Time [|| 1 —] | to = 1.8 Ω<br>Fall 24 [— | ~ | Ro=8.2 Ω<br>Time F—=Tso [=| | Ro= 26 D<br>Internal Drain Inductance — ;}40 ;— .<br>nH | Between lead,6mm(0.25in.) G<br>Internal Source Inductance — }60 ;— | from. package and center<br>of die contact S<br>Input Capacitance | —- |320 | | Ves = OV<br>Output CapacitanceReverse Transfer Capacitance [=—— [250| 75 [=]|— pF | Vos f =1.0MHz = 18V<br>Source-Drain Ratings and Characteristics<br>Parameter Min. | Typ. |Max.| Units Conditions<br>Continuous Source Current 20 MOSFET symbol D<br>(Body Diode) A | showing the<br>Pulsed Source Current | integral reverse G<br>(Body Diode) © —|—| "4 p-n junction diode. S<br>Diode Forward Voltage }--[|— [1.2] Vv | Ty = 25°C, Is = 1.7A, Veg = 0V @<br>Reverse Recovery Time |---| 36 | 54 | ns | Ty = 25°C, le =1.7A<br>Reverse RecoveryCharge ——| 41 | 62 | nC | di/dt = 100A/us ©<br>Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Lg+Lp)<br>Repetitive rating; pulse width limited by © Pulse width ≤ 300us; duty cycle ≤ 2%.<br>max. junction temperature.<br>ISD ≤ 3.5A, di/dt ≤ 90A/Us, Vpp ≤ Verypss; ® Surface mounted on FR-4 board, t ≤ 10sec.<br>≤<br>**----- End of picture text -----**<br>
IRF7101PbF
## International Ie Rectifier
**==> picture [406 x 431] intentionally omitted <==**
**----- Start of picture text -----**<br>
re |OS]ona 5 a a8 A a Aaee<br>ge ww 2S} — 4 wel pznnn<br>ef PEM) KATO 4 g PL KT<br>Zoe of et<br>( 4Zzo f+ Bee<br>Ve Ui+<br>g — s cp<br>§ |<br>sZeCLYo TIL] g3 YUe Zz ——---~<br>a A a a (H{Uyz_"_-<br>(7. {tI 20us PULSE WIDTH VIS ATi 20us PULSE WIDTH<br>aaa,; PT Te = 25% GAWu fff Te = 150°C<br>:0 4 0 1<br>Vos, Drain-to-Source Voltage (volts) " Vps, Drain-to-Source Voltage (volts)<br>Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,<br>PT TTT TT [TTT}] 3 TTTTTT TT<br>2 Eee<br>PL:€a bade7 ya |} bso EEEee<br>3 Vn on se (itttt tery<br>, $8 pitty | | |<br>mua 22 CODE<br>6 vt fA ee a<br>(ERSSSWEEf| oe 8a CCees<br>4 5 6 7 8 9 10 earn -40 -20 0 20 40 60 80 100 120 140 160<br>Ves, Gate-to-Source Voltage (volts) Ty, Junction Temperature (°C)<br>**----- End of picture text -----**<br>
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
## IRF7101PbF
**==> picture [417 x 483] intentionally omitted <==**
**----- Start of picture text -----**<br>
IRF7101PbF International<br>Ter Rectifier<br>c = Cgs + Cag. Cys SHORTED<br>a eee ee<br>_<br>S =KT Th ee ee<br>gf Rs st | tt<br>RINT Plt ty yk<br>TOSS Fae<br>POS) OCD ee<br>OTS] og A<br>|HPSS + ap Por<br>" - .<br>Vps, Drain-to-Source Voltage (volts) , “Oe, Total Cate Change (nc) °<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>aa seco Geese<br>BE cea e Seen con<br>Porecorete eee LOI<br>PCeOZeeE P-Eeee<br>PA/ | BATCPNTES LHI<br>o §5 ZeePS<br>9 EGEEEREEEEFER CSASst<br>7 7AEE EEE “es = 44 6 Ll: TTT seteeoeosel TUTTT<br>0.5 0.6 0.7 0.8 0.9 1.0 4.1 4.2 O.4 2 5 4 2 5 40 2 5 102 2 5 103<br>Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts)<br>**----- End of picture text -----**<br>
- Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
**==> picture [428 x 194] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>a<br>R D = 0.50 oo Et<br>EE | ot<br>0.20<br> 10 sor er Ef<br>eens 0.10 eee eee ete ee ee es eee<br>a ee "ae ee ee ee eee eee<br>0.05 ae<br>T e I ee<br>0.02<br>er fh PDM<br>0.01<br> 1 sere<br>SINGLE PULSE t1<br>——s—asiameAn (THERMAL RESPONSE) ——[{fa ane t2<br>ee e e Notes:<br>1. Duty factor D = t / t1 2<br>Co F eieee 2. Peak T J = P DM x Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1 Co 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**==> picture [98 x 48] intentionally omitted <==**
**----- Start of picture text -----**<br>
+<br>-<br> 1 = us<br>≤ 0.1 %<br>**----- End of picture text -----**<br>
**==> picture [158 x 160] intentionally omitted <==**
**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>plat .3µF<br>| J | +<br>a a D.U.T. -VDS<br>VGS<br>3mA<br>t || IG [nine ID |<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**==> picture [137 x 93] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDS<br>90%<br>10%<br>VGS f<br>lee >! ale<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**==> picture [129 x 132] intentionally omitted <==**
**----- Start of picture text -----**<br>
QG<br>— — ——<br>A <t— QGS + QGD —><br>VG<br>Charge<br>**----- End of picture text -----**<br>
**==> picture [239 x 184] intentionally omitted <==**
**----- Start of picture text -----**<br>
D.U.T + Circuit Layout Considerations<br>™ • Low Stray Inductance<br>@ • Ground Plane<br> • Low Leakage Inductance<br>| I - Current Transformer<br>+<br>- - +<br>(0<br>Re • dv/dt controlled by Rg +<br>• Driver same type as D.U.T. -<br>•<br>• D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>
**==> picture [276 x 203] intentionally omitted <==**
**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode __ Forward Drop _<br>® Inductor Curent ee ee<br>Ripple ≤ 5% ISD<br>**----- End of picture text -----**<br>
## SO-8 Package Outline
Dimensions are shown in milimeters (inches)
**==> picture [292 x 270] intentionally omitted <==**
**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>jarecioe 6 H EEE D .189 .1968 4.80 5.00<br>E 0.25 [.010] A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050 BASIC 1.27 BASIC<br>— ===<br>e1 .025 BASIC 0.635 BASIC<br>“n a == H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oe oo L .016 .050 0.40 1.27<br>y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010] C A B e 7<br>FOOTPRINT<br>NOTES:<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER ape<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>: 6.46 [.255] ; O00<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>S) MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. ii id<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br> A SUBSTRATE.<br>3X 1.27 [.050] te 8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE
PART NUMBER
## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
**==> picture [174 x 112] intentionally omitted <==**
**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>o O66) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>a<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**==> picture [154 x 68] intentionally omitted <==**
**----- Start of picture text -----**<br>
330.00<br>(12.992)<br> MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →