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IRF40H233XTMA1
Dual MOSFET, N Channel, 40 V, 35 A, 0.0051 ohm, PQFN, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 50W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0051ohm
- Transistor Case Style: PQFN
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 35A
- Power Dissipation N Channel: 50W
- Power Dissipation P Channel: 50W
- Gate Source Threshold Voltage Max: 3V
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 35A
- Continuous Drain Current Id P Channel: 35A
- Drain Source On State Resistance N Channel: 0.0051ohm
- Drain Source On State Resistance P Channel: 0.0051ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.45 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**IRF40H233** ## **MOSFET** ## **Benefits** ||**Parameter**|**Value**|**Value**|**Value**|||**Unit**||||| |---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||| ||_V_DS|40|||||V||||| ||_R_DS(on),typ|5.1|||||mΩ||||| ||_R_DS(on),max|6.2|||||mΩ||||| |_I_<br>_I_<br>~~jovsiconume~~<br>~~[owocaseumey ~~||63<br>A<br>35<br>A<br>~~||~~<br> ~~|~~<br>~~|~~|||||||||| ||IRF40H233<br>~~Type/OrderingCode ~~||**Package**<br>PQFN 5x6 Dual<br> ~~|~~|||PQFN 5x6 Dual<br>~~|~~||**Marking**<br>H233||-<br>~~Related Links~~|| Final Data Sheet 1 **IR�MOSFET�-�StrongIRFETª IRF40H233** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.�2.1,��2018-07-16 **IR�MOSFET�-�StrongIRFETª IRF40H233** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _TC_ =25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|35<br>63<br>32|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=25°C(siliconlimited)<br>_V_GS=10V,_T_C=100°C1)| |Pulsed drain current1)|_ID,pulse_|-|-|140|A|_T_C=25°C| |Avalanche energy, single pulse2)|_E_AS|-|-|71|mJ|_I_D=35A,_R_GS=50Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-|-|50|W|_T_C=25°C| |Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom3)|_R_thJC|-|-|3|°C/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|45|°C/W|-| |Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|40|°C/W|-| |Device on PCB,<br>RTHJA(<10s)|_R_thJA|-|-|25|°C/W|-| > 1) See Diagram 3 for more detailed information > 2) See Diagram 13 for more detailed information 3) RthJC is measured at TJ approximately 90°C. Final Data Sheet 3 Rev.�2.1,��2018-07-16 **IR�MOSFET�-�StrongIRFETª IRF40H233** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=250µA| |Breakdown voltage temperature<br>coefficient|d_V_(BR)DSS/d_T_j|-|41|-|mV/°C|_I_D=1mA,referencedto25°C| |Gate threshold voltage|_V_GS(th)|2.2|3.0|3.9|V|_V_DS=_V_GS,_I_D=50µA| |Zero gate voltage drain current|_I_DSS|-<br>-|-<br>-|1<br>150|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-|5.10|6.20|mΩ|_V_GS=10V,_I_D=35A| |Gate resistance1)|_R_G|-|1.8|-|Ω|-| |Transconductance|_g_fs|-|60|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=35A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|2200|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Output capacitance1)|_C_oss|-|380|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|260|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=26V,_V_GS=10V,_I_D=35A,<br>_R_G,ext=2.7Ω| |Rise time|_t_r|-|67|-|ns|_V_DD=26V,_V_GS=10V,_I_D=35A,<br>_R_G,ext=2.7Ω| |Turn-off delay time|_t_d(off)|-|25|-|ns|_V_DD=26V,_V_GS=10V,_I_D=35A,<br>_R_G,ext=2.7Ω| |Fall time|_t_f|-|30|-|ns|_V_DD=26V,_V_GS=10V,_I_D=35A,<br>_R_G,ext=2.7Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|12|-|nC|_V_DD=20V,_I_D=35A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|6.6|-|nC|_V_DD=20V,_I_D=35A,_V_GS=0to10V| |Gate to drain charge1)|_Q_gd|-|16|-|nC|_V_DD=20V,_I_D=35A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|21|-|nC|_V_DD=20V,_I_D=35A,_V_GS=0to10V| |Gate charge total1)|_Q_g|-|45|57|nC|_V_DD=20V,_I_D=35A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|5.2|-|V|_V_DD=20V,_I_D=35A,_V_GS=0to10V| |Gate charge total, sync. FET|_Q_g(sync)|-|29|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge2)|_Q_oss|-|13|-|nC|_V_DD=20V,_V_GS=0V| > 1) Defined by design. Not subject to production test. > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.1,��2018-07-16 4 **IR�MOSFET�-�StrongIRFETª IRF40H233** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current1)|_I_S|-|-|35|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|140|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|-|1.3|V|_V_GS=0V,_I_F=35A,_T_j=25°C| |Reverse recoverytime2)|_t_rr|-|22|-|ns|_V_R=34V,_I_F=35A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge2)|_Q_rr|-|16|-|nC|_V_R=34V,_I_F=35A,d_i_F/d_t_=100A/µs| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Defined by design. Not subject to production test. Final Data Sheet Rev.�2.1,��2018-07-16 5 IR MOSFET - StrongIRFET™ **IRF40H233** **==> picture [539 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 60 75<br>package limit<br>silicon limit<br>| | [ | |] | =m<br>50<br>| | | ff] 60 ees ee ee ee<br>S SE<br>40 |) E SSE<br>“XN<br>HANS 45 E e<br>Eo 30 Ne<br>30<br>20<br>pj} fj | Af ff<br>Hf |} | N 15 ff peNYN<br>10<br>NN |<br>a ee eeeee<br>0 fT TEEN 0 ffpt<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 10 [2]<br>single pulse<br>0.01<br>0.02<br>0.05<br>10 [2] S e aailill i 0.1 CCE<br>oe 100 µs ae 10 µs 10 [1] : 0.20.5 EEE He<br>10 [1]<br>1 ms<br>2 NAU Lh N N AL = 10 [0] rA T ae TTT<br>i TI Lil<br>ES aEe<br>10 ms<br>10 [0] ee Oe ll eee meets nee att aoe sah ae aa<br>DC<br>ee eee UTM IIEATL<br>10 [-1]<br>10 [-1]<br>=== aN Ae<br>ee ee et tinCMC<br>a a ee ee ee<br>10 [-2] A 10 [-2] LUVIN LETRAEERIELIM<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **IRF40H233** **==> picture [528 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 140 20<br>ee<br>4.5 V a<br>7d 5 V a<br>ee 5.5 V oo<br>120<br>6 V<br>Seee a 7 V SLEa 16<br>EE 8 V a 5 V<br>10 V<br>100 I EL 15 V a 5.5 V 6 V<br>Se je errr ce 12<br>80 i cece<br>< o y VA )<br>60 a a, wi<br>a 8 | Le<br>iee T TT i)pftt 7 V8 V<br>40<br>a =—— 10 V<br>oe 4<br>20<br>tele<br>i a ee<br>ooo<br>0 0<br>0 1 2 3 4 5 0 20 40 60 80 100 120 140 160<br>V DS Ww I D [Al<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>140 ee eee 18 TTT TTT TT TTT TT<br>16<br>120<br>ee ee ee ee SH<br>ee eee<br>14<br>ee | |<br>100<br>ee ee ee BS<br>12<br>80 ee ee IWBGRTTT ETeeePP ETT YY<br>10<br>2 re<br>60 125 °C<br>ee ee osee 8 -HPSSEEE EEEEEE<br>\ PASSES<br>ee JM |eee<br>40<br>6<br>TT} SSE EEE<br>ee ee eeeee<br>20<br>/ 4 Pity EE) 25 °C<br>25 °C<br>175 °C<br>0 ff Aare 2 PTETPET TTT TTTEETPeer EyPryyy<br>0 2 4 6 8 4 6 8 10 12 14 16 18 20<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Final Data Sheet 7 IR MOSFET - StrongIRFET™ **IRF40H233** **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4 TT TTP? 4.0 TTT TTT<br>3.5<br>2.0 GRRE EEE<br>PPP PT [TTT)]<br>Pt 3.0 SSS<br>> 1.6 ttt ee et ly TNS 500 µA<br>ye | ti tt tt] A 2.5 fp OND<br>2 EEE TT] | et NN<br>> — EEPrPrriyx<br>1.2 2.0<br>Bf NN<br>pot |tr +_+_ 1} 1 AEN<br>1.5<br>50 µA<br>0.8<br>fF ii re<br>J 1.0 |<br>0.4 Te TT PP Td a<br>0.5<br>PEt} ee<br>0.0 ET Tt yt 0.0<br>-75 -25 25 75 125 175 -75 -25 25 75 125 175<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10 [3]<br>Se ——— —————————<br>25 °C<br>175 °C<br>SSEESSSSSSSSSEES |<br>FSS EEE a<br>CEE FEE | L E<br>10 [2]<br>Ciss<br>KEEFE EEE e e<br>EES<br>NUL) es es ee 2<br>10 [3] 10 [1]<br>BM ef Sf<br>ARNE EEE EE 4 ———————<br>SSERSSSEESEE<br>Coss<br>COBSECECRSEEEEEEE PAE—<br>10 [0]<br>CCBAC EPRREEE T T ET | atLT<br>|<br>Crss ee aS FS Oe|<br>Po<br>10 [2] 10 [-1]<br>0 5 10 15 20 25 30 35 40 0.0 0.4 0.8 1.2 1.6<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **IRF40H233** **==> picture [526 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 14<br>8 V<br>20 V<br>32 V<br>12<br>A<br>os CTS oe TESTO 25 °C lllll 10 T E L te | AK/ a7,<br>10 [1] CUI USCUINONU | EEE S61<br>a 8 / a<br>= Pt TTT ANTI 100 °C co Bf<br><x S| S.<br>6<br>150 °C<br>oh pe ee PON Eg e n eee<br>10 [0] AIIM UIE | Eu NNT pr<br>Poaaeee 4 rif) | | | tt i ytd<br>|<br>2<br>rn PY] | | | ft iytd<br>UTI C onAV rnUE CeTAM ATIZEEE<br>10 [-1] 0<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>I AV V GS<br>**----- End of picture text -----**<br> ## **Diagram Gate charge waveforms** **==> picture [259 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>48<br>Coe<br>Z|<br>46<br>PTT [TTT] Ty<br>ralett<br>L [So]<br>ERR<br>44<br>Bp Zee<br>42<br>ap4nR00EER<br>fo<br>40<br>-75 PET -25 ETE 25 75 EET 125 175<br>T j<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **IRF40H233** Final Data Sheet 10 **IR�MOSFET�-�StrongIRFETª IRF40H233** **==> picture [120 x 53] intentionally omitted <==** ## **REEL DIMENSIONS** **==> picture [79 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TAPE DIMENSIONS<br>**----- End of picture text -----**<br> **==> picture [134 x 134] intentionally omitted <==** DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers ## **QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE** Note: All dimension are nominal |Type<br>Package|Diameter<br>Reel<br>(Inch)|QTY|Width<br>Reel<br>W1<br>(mm)|(mm)<br>Ao|(mm)<br>Bo|(mm)<br>Ko|(mm)<br>P1|(mm)<br>W|Quadrant<br>Pin 1| |---|---|---|---|---|---|---|---|---|---| |5 X 6 PQF|N<br>13|4000|12.4|6.300|5.300|1.20|8.00|12|Q1| **Figure�2�����Outline�Tape�(PQFN�5x6�Dual),�dimensions�in�mm/inches** Final Data Sheet 11 Rev.�2.1,��2018-07-16 **IRF40H233** ## IRF40H233 ## Previous Revision |Revision|Date|Subjects (major changes since last revision)| |---|---|---| |1.0|2018-07-05|Release of preliminary version| |2.0|2018-07-12|Release of final version| |2.1|2018-07-16|Update Potential Application| ## **Trademarks** ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** Final Data Sheet 12
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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