IRF3205LPBF

Power MOSFET, N Channel, 55 V, 110 A, 8000 µohm, TO-262, Through Hole

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po
MSL: MSL 1 - Unlimited
SVHC: No SVHC (08-Jul-2021)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: HEXFET
Qualification: -
Power Dissipation: 200W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-262
Drain Source Voltage Vds: 55V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 110A
Drain Source On State Resistance: 8000µohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	100
Price	1.05 €
Current stock	500+
Lead time	7 days

Datasheet

Updated at March 10, 2026