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IPG16N10S461AATMA1
Dual MOSFET, Dual N Channel, 100 V, 16 A, 0.053 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Dual N Channel
- Product Range: OptiMOS T2 Series
- Qualification: AEC-Q101
- Transistor Case Style: TDSON
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 29W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 16A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.053ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.329 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**IPG16N10S4-61A**
## **OptiMOS™-T2 Power-Transistor**
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|||||
|---|---|---|---|
|Product Summary|
|V|DS|100|V|
|R|3)|61|mW|
|DS(on),max|
|I|D|16|A|
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## **Features**
- Dual N-channel Normal Level - Enhancement mode
## PG-TDSON-8
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS compliant
- 100% Avalanche tested
- Feasible for automatic optical inspection (AOI)
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||||
|---|---|---|
|Type|Package|Marking|
|IPG16N10S4-61A|PG-TDSON-8|4N1061|
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**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified
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||||||||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|Unit|
|Continuous drain current|
|one channel active|I|D|T|C=25 °C,|V|GS=10 V|16|A|
|T|C=100 °C,|
|11|
|V|GS=10 V|[1)]|
|Pulsed drain current|[1)]|I|D,pulse|-|64|
|one channel active|
|Avalanche energy, single pulse|[1, 3)]|E|AS|I|D=8A|33|mJ|
|ee|ee|
|Avalanche current, single pulse|[3)]|I AS|-|10|A|
|ee|
|Gate source voltage|V|GS|-|±20|V|
|Power dissipation|
|one channel active|P|tot|T|C=25 °C|29|W|
|fof|
|Operating and storage temperature|T|j,|T|stg|-|-55 ... +175|°C|
|a|ee|ee|
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Rev. 1.21
page 1
2024-08-07
**IPG16N10S4-61A**
**Parameter Symbol Conditions Values Unit min. typ. max.** ~~ee ee~~ **Thermal characteristics[1)]** Thermal resistance, junction - case _R_ thJC - - - 5.2 K/W SMD version, device on PCB _R_ thJA minimal footprint - 100 - 6 cm[2] cooling area[2)] - 60 - ~~Soon~~ **Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified
## **Static characteristics**
|**Static characteristics**|||||||
|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0V,_I_D=1mA|100|-|-|V|
|Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D=9µA|2.0|2.8|3.5||
|Zero gate voltage drain current3)|_I_DSS|_V_DS=100V,_V_GS=0V,<br>_T_j=25°C|-|0.01|1|µA|
|||_V_DS=100V,_V_GS=0V,<br>_T_j=125°C1)|-|1|100||
|Gate-source leakage current3)|_I_GSS|_V_GS=20V,_V_DS=0V|-|-|100|nA|
|Drain-source on-state resistance3)|_R_DS(on)|_V_GS=10V,_I_D=16A|-|53|61|mW|
Rev. 1.21
page 2
2024-08-07
**IPG16N10S4-61A**
|**Parameter**<br>**Symbol**<br>**Dynamic characteristics1)**<br>~~ee ~~|**Parameter**<br>**Symbol**<br>**Dynamic characteristics1)**<br>~~ee ~~|**Parameter**<br>**Symbol**<br>**Dynamic characteristics1)**<br>~~ee ~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br> ~~ee~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br> ~~ee~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br> ~~ee~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br> ~~ee~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br> ~~ee~~|
|---|---|---|---|---|---|---|---|
||Input capacitance3)|_C_iss||-|374|580|pF|
||Output capacitance3)|_C_oss|_V_GS=0V,_V_DS=25V,<br>_f_=1MHz|-|120|240||
||Reverse transfer capacitance3)|Crss||-|10|20||
||Turn-on delay time|_t_d(on)||-|3|-|ns|
||Rise time|_t_r|_V_DD=50V,_V_GS=10V,|-|1|-||
||Turn-off delay time|_t_d(off)|_I_D=16A,_R_G=11W|-|5|-||
||Fall time|_t_f||-|5|-||
||**Gate Charge Characteristics1, 3)**|||||||
||Gate to source charge|_Q_gs||-|2|3.0|nC|
||Gate to drain charge|_Q_gd|_V_DD=50V,_I_D=16A,|-|1.3|2.6||
||Gate charge total|_Q_g|_V_GS=0 to 10V|-|5.4|9.5||
||Gate plateau voltage|_V_plateau||-|5.4|-|V|
||**Reverse Diode**|||||||
||Diode continous forward current1)<br>one channel active|_I_S||-|-|16|A|
||||_T_C=25°C|||||
||Diode pulse current1)<br>one channel active|_I_S,pulse||-|-|64||
||Diode forward voltage|_V_SD|_V_GS=0V,_I_F=16A,<br>_T_j=25°C|-|1.0|1.3|V|
||Reverse recovery time1)|_t_rr|_V_R=50V,_I_F=_I_S,<br>d_i_F/d_t_=100A/µs|-|50|-|ns|
||Reverse recovery charge1, 3)|_Q_rr||-|70|-|nC|
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
3) Per channel
Rev. 1.21
page 3
2024-08-07
**IPG16N10S4-61A**
## **1 Power dissipation**
_P_ tot = f( _T_ C); _V_ GS ≥ 6 V; one channel active
## **2 Drain current**
_I_ D = f( _T_ C); _V_ GS ≥ 6 V; one channel active
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35 20<br>30<br>15<br>25<br>20<br>10<br>15<br>10<br>5<br>5<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>T C [°C] T C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>=f( V DS); ); T C=25°C; =25°C; D =0; one channel active Z thJC = f( t p)<br>parameter: t p parameter: D = t p/ T<br>100 10 [1]<br>1 µs<br>0.5<br>10 µs<br>10 10 [0]<br>100 µs<br>0.1<br>0.05<br>1 ms<br>0.01<br>1 10 [-1]<br>single pulse<br>0.1 10 [-2]<br>0.1 1 10 100 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br> [W] [A]<br>P tot I D<br> [A] [K/W]<br>I D<br>thJC<br>Z<br>**----- End of picture text -----**<br>
## **3 Safe operating area**
_I_ D=f( _V_ DS); ); _T_ C=25°C; =25°C; _D_ =0; one channel active parameter: _t_ p
Rev. 1.21
page 4
2024-08-07
**IPG16N10S4-61A**
## **5 Typ. output characteristics[3)]**
_I_ D = f( _V_ DS); _T_ j = 25 °C
parameter: _V_ GS
## **6 Typ. drain-source on-state resistance[3)]**
_R_ DS(on) = f( _I_ D); _T_ j = 25 °C parameter: _V_ GS
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64 160<br>10 V 9 V 8 V 5 V 6 V 7 V<br>56<br>140<br>48<br>7 V<br>120<br>40<br>32 100<br>24 6 V<br>80<br>16<br>9 V<br>5 V 60<br>8 10 V<br>0 40<br>0 2 4 6 8 0 16 32 48 64<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics [[3)]] 8 Typ. drain-source on-state resistance [3)]<br>= f( V GS); ); V DS = 6V= 6V R DS(on) = f( T j); I D = 16 A; V GS = 10 V<br>parameter: T j α = 0.4<br>64 120<br>-55 °C<br>25 °C<br>56<br>100<br>48<br>40<br>80<br>32 175 °C<br>24 60<br>16<br>40<br>8<br>0<br>20<br>3 5 7 9<br>-60 -20 20 60 100 140 180<br>V GS [V] T j [°C]<br>]W<br> [m<br> [A]<br>I D<br>DS(on)<br>R<br>]<br>W<br> [m<br> [A]<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
## **7 Typ. transfer characteristics[[3)]]**
_I_ D = f( _V_ GS); ); _V_ DS = 6V= 6V
parameter: _T_ j
Rev. 1.21
2024-08-07
page 5
**IPG16N10S4-61A**
## **9 Typ. gate threshold voltage**
_V_ GS(th) = f( _T_ j); _V_ GS = _V_ DS
## **10 Typ. Capacitances[3)]**
_C_ = f( _V_ DS); _V_ GS = 0 V; _f_ = 1 MHz
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parameter: I D<br>4 10 [3]<br>Ciss<br>3.5<br>3 10 [2] Coss<br>90µA<br>2.5<br>9µA<br>2 10 [1]<br>Crss<br>1.5<br>1 aa ~ e 10 [0] atai<br>-60 -20 20 60 100 140 180 0 20 40 60 80 100<br>T j [°C] V DS [V]<br>11 Typical forward diode characteristics [3)] 12 Avalanche characteristics [3)]<br>IF = f(VSD) I A S= f( t AV)<br>parameter: T j parameter: Tj(start)<br>10 [2] 100<br>10<br>25 °C<br>100 °C<br>10 [1]<br>150 °C<br>1<br>175 °C 25 °C<br>10 [0] 0.1<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000<br>V SD [V] t AV [µs]<br> [pF]<br>C<br> [V]<br>GS(th)<br>V<br> [A] [A]<br>I F I AV<br>**----- End of picture text -----**<br>
Rev. 1.21
page 6
2024-08-07
**IPG16N10S4-61A**
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13 Avalanche energy [3)]<br>**----- End of picture text -----**<br>
_E_ AS = f( _T_ j), _I_ D = 8A
## **14 Drain-source breakdown voltage**
_V_ BR(DSS) = f( _T_ j); _I_ D = 1 mA
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40 110<br>108<br>30 106<br>104<br>20 102<br>100<br>10 98<br>96<br>0 94<br>25 50 75 100 125 150 175 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>15 Typ. gate charge [[5)]] 16 Gate charge waveforms<br> GS = f(= f( Q gate); ); I D = 16 A pulsed= 16 A pulsed<br>parameter: V DD<br>12<br>V GS<br>10 20 V Q g<br>80 V<br>8<br>6<br>V<br> gs(th)<br>4<br>/<br>2<br>Q g(th) Q sw Q gate<br>a is<br>0<br>0 1 2 3 4 5 6<br>Q gs Q gd<br>Q gate [nC]<br> [V]<br>[mJ]<br>E AS V BR(DSS)<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br>
**15 Typ. gate charge[[5)]]** _V_ GS = f(= f( _Q_ gate); ); _I_ D = 16 A pulsed= 16 A pulsed parameter: _V_ DD
Rev. 1.21
2024-08-07
page 7
**IPG16N10S4-61A**
## **Trademarks**
All referenced product or service names and trademarks are the property of their respective owners.
## **Edition 2024-08-07**
**Published by**
**Infineon Technologies AG**
**81726 Munich, Germany**
**© 2024 Infineon Technologies AG**
**All Rights Reserved.**
**Do you have any questions about any aspect of this document?**
**Email: erratum@infineon.com**
**Document reference IPG16N10S4-61A-Data-Sheet-1-21-Infineon**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie").
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact the nearest Infineon Technologies Office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Rev. 1.21
page 8
2024-08-07
Revision History
|**Version**|Date|Changes|
|---|---|---|
|Revision 1.0|04.03.2013|Final Data Sheet|
|Revision 1.1|14.11.2014|Update of Coss, Ciss, Qgs, Qtot|
|Revision 1.2|28.07.2022|Diagram 8 Typ. drain-source on-<br>state resistance: used α value<br>clarified|
|Revision 1.21|07.08.2024|Package naming updated|
Rev. 1.21
page 9
2024-08-07
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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