IPB029N06N3GATMA1

Power MOSFET, N Channel, 60 V, 120 A, 2300 µohm, TO-263 (D2PAK), Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: OptiMOS 3
Qualification: -
Power Dissipation: 188W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-263 (D2PAK)
Drain Source Voltage Vds: 60V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 120A
Drain Source On State Resistance: 2300µohm
Gate Source Threshold Voltage Max: 3V

Delivery and price
Units per pack	5000
Price	0.725 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 10, 2026