IMH21T110

Datasheet 

**NPN  600mA  20V  Digital Transistors (Bias Resistor Built-in Transistors) For Muting.** 

## IMH21 

##  **Outline** 

Parameter Tr1 and Tr2 VCEO 20V VEBO 12V IC 600mA R1 10k ~~==~~ 

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SMT6<br>(4)<br>(5)<br>(6)<br>(3)<br>(2)<br>(1)<br>IMH21<br>SOT-457 (SC-74)<br>**----- End of picture text -----**<br>


##  **Features** 

- 1) Built-In Biasing Resistors 

- 2) Two DTC614T chips in one package. 

- 3) Low saturation voltage, typically 

- VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these 

transistors ideal for muting circuits. 

- 4) These transistors can be used at high current levels, IC=600mA. 

- 5) Built-in bias resistors enable the configuration of 

- an inverter circuit without connecting external 

- input resistors (see equivalent circuit). 

- 6) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 

- 7) Lead Free/RoHS Compliant. 

##  **Inner circuit** 

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Collector Base Emitter<br>(4) (5) (6)<br>R1<br>R1<br>4<br>(3) (2) (1)<br>Emitter Base Collector<br>R1=10kΩ<br>**----- End of picture text -----**<br>


##  **Application** 

Muting circuit 

 **Packaging specifications** Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) IMH21 SMT6 2928 T110 180 8 3,000 H21 ~~EEE~~ 

www.rohm.com © 2014  ROHM Co., Ltd. All rights reserved. 

**2014.10 -  Rev.C** 

1/5 

Data Sheet 

**IMH21** 

##  **Absolute maximum ratings** (Ta = 25°C) 

<For Tr1 and Tr2 in common> 

|<For Tr1 and Tr2 in common>||||
|---|---|---|---|
|Parameter|Symbol|Values|Unit|
|Collector-base voltage|VCBO|20|V|
|Collector-emitter voltage|VCEO|20|V|
|Emitter-base voltage|VEBO|12|V|
|Collector current|IC|600|mA|
||ICP<br>*1|1|A|
|Power dissipation|PD<br>*2|300(Total)*3|mW|
|Junction temperature|Tj|150|°C|
|Range of storage temperature|Tstg|55 to150|°C|



##  **Electrical characteristics** (Ta = 25°C) 

<For Tr1 and Tr2 in common> 

|<For Tr1 and Tr2 in common>|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Min.|Typ.|Max.|Unit|
|Collector-base breakdown voltage|BVCBO|IC= 50A|20|-|-|V|
|Collector-emitter breakdown voltage|BVCEO|IC= 1mA|20|-|-|V|
|Emitter-base breakdown voltage|BVEBO|IE= 50A|12|-|-|V|
|Collector cut-off current|ICBO|VCB= 20V|-|-|0.5|A|
|Emitter cut-off current|IEBO|VEB= 12V|-|-|0.5|A|
|Collector-emitter saturation voltage|VCE(sat)|IC/ IB= 50mA / 2.5mA|-|40|150|mV|
|DC current gain|hFE|VCE= 5V, IC= 50mA|820|-|2700|-|
|Input resistance|R1|-|7|10|13|k|
|Transition frequency|fT *4|VCE= 10V, IE=50mA<br>f = 100MHz|-|150|-|MHz|
|Output ON Resistance|Ron|VI= 5V<br>RL= 1k, f = 1kHz|-|0.9|-||



- *1 PW=10ms, Single pulse 

- *2 Each terminal mounted on a reference footprint 

- *3 200mW per element must not be exceeded. 

- *4 Characteristics of built-in transistor 

www.rohm.com © 2014  ROHM Co., Ltd. All rights reserved. 

**2014.10 -  Rev.C** 

2/5 

Data Sheet 

**IMH21** 

##  **Electrical characteristic curves** (Ta = 25°C) 

Fig.1 Grounded emitter propagation characteristics 

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10<br>VCE= 5V<br>1<br>0.1<br>0.01 Ta=100ºC<br>25ºC<br>40ºC<br>0.001<br>0 0.2 0.4 0.6 0.8 1<br>COLLECTOR CURRENT : Ic [mA]<br>**----- End of picture text -----**<br>


BASE TO EMITTER VOLTAGE : VBE [V] 

Fig.3 DC Current gain vs. Collector Current 

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10000<br>V CE = 5V<br>1000<br>Ta= 100°C<br> 25 ° C<br>− 40°C<br>100<br>0.1 1 10 100 1000<br>COLLECTOR CURRENT : IC [mA]<br>FE<br>DC CURRENT GAIN : h<br>**----- End of picture text -----**<br>


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Fig.2 Grounded emitter output<br>characteristics<br>600 IB= 1.0mA 0.9mA 0.8mA<br>Ta=25ºC 0.7mA<br>0.6mA<br>0.5mA<br>400<br>0.4mA<br>0.3mA<br>0.2mA<br>200<br>0.1mA<br>0 0A<br>0 2 4 6 8 10<br> [mA]<br>C<br>COLLECTOR CURRENT : I<br>**----- End of picture text -----**<br>


COLLECTOR TO EMITTER VOLTAGE : VCE [V] 

Fig.4 Collector-emitter saturation voltage vs. Collector Current 

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10000<br>IC/IB=20<br>1000<br>100<br>Ta= 100°C<br> 25°C<br>− 40 ° C<br>10<br>1<br>0.1 1 10 100 1000<br>COLLECTOR CURRENT : IC [mA]<br> [mV]<br>CE(sat)<br>VOLTAGE : V<br>COLLECTOR SATURATION<br>**----- End of picture text -----**<br>


www.rohm.com © 2014  ROHM Co., Ltd. All rights reserved. 

**2014.10 -  Rev.C** 

3/5 

Data Sheet 

**IMH21** 

##  **Electrical characteristic curves** (Ta = 25°C) 

Fig.5 Output ON resistance vs. input voltage 

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1000<br>Ta= 25°C<br>f=1MHz<br>RL=1k Ω<br>100 hFE=250 (5V/50mA)<br>10<br>1<br>0.1<br>0.1 1 10 100<br>]<br> [<br>on<br>OUTPUT ON RESISTANCE : R<br>**----- End of picture text -----**<br>


INPUT VOLTAGE : VI [V] 

Fig.6 Ron measurement circuit. 

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Vo<br>RL=1kΩ Ron= Vi-VO × RL<br>D.U.T.<br>INPUT OUTPUT<br>100mV(rms)Vi ~ V~ VO<br>f=1kHz VI<br>**----- End of picture text -----**<br>


www.rohm.com © 2014  ROHM Co., Ltd. All rights reserved. 

**2014.10 -  Rev.C** 

4/5 

Data Sheet 

**IMH21** 

##  **Dimensions** (Unit : mm) 

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D<br>A<br>e<br>SMT6 c<br>Q<br>A3<br>b<br>x S A<br>e<br>y S<br>S<br>b2<br>Pattern of terminal position areas<br>[Not a recommended pattern of soldering pads]<br>E<br>E H<br>L1 Lp<br>e1<br>A<br>l1<br>A1<br>**----- End of picture text -----**<br>


|DIM|MIN<br>MAX<br>MILIMETERS|MIN<br>MAX<br>MILIMETERS|INCHES|INCHES|
|---|---|---|---|---|
|||MAX|MIN|MAX|
|A|1.00|1.30|0.039|0.051|
|A1|0.00|0.10|0.000|0.004|
|A3|0.25||0.010||
|b|0.25|0.40|0.010|0.016|
|c|0.09|0.25|0.004|0.010|
|D|2.80|3.00|0.110|0.118|
|E|1.50|1.80|0.059|0.071|
|e|0.95||0.037||
|HE|2.60|3.00|0.102|0.118|
|L1|0.30|0.60|0.012|0.024|
|Lp|0.40|0.70|0.016|0.028|
|Q|0.20|0.30|0.008|0.012|
|x|-|0.20|-|0.008|
|y|-|0.10|-|0.004|
||||||
|DIM|MIN<br>MAX<br>MILIMETERS||INCHES||
|||MAX|MIN|MAX|
|b2||0.60|-|0.024|
|e1|2.10||0.083||
|l1|-|0.90|-|0.035|



Dimension in mm / inches 

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**2014.10 -  Rev.C** 

5/5 

Notice 

- **N o t e s** 

- 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 

- 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 

- 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

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