IMD9AT108
Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 100 mA, 10 kohm, 47 kohm
- Manufacturer: ROHM
- Product type: Pre-Biased / Digital Bipolar Transistors
- No. of Pins: 6 Pin
- Product Range: IMD9A Series
- Power Dissipation: 300mW
- RF Transistor Case: SOT-457
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN and PNP Complement
- Transistor Case Style: SOT-457
- Base Input Resistor R1: 10kohm
- DC Current Gain hFE Min: 68hFE
- Base Emitter Resistor R2: 47kohm
- Operating Temperature Max: 150°C
- Digital Transistor Polarity: NPN and PNP Complement
- Continuous Collector Current: 100mA
- Continuous Collector Current Ic: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: 50V
- Collector Emitter Voltage V(br)ceo: 50V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.022 € |
| Current stock | 10+ |
| Lead time | 30 days |
## Digital Transistor (Dual Digital Transistors for Inverter Drive) ## **EMD9 / UMD9N / IMD9A** ## **Features** 1) DTA114Y and DTC114Y transistors are built-in a EMT or UMT or SMT package. ## **Inner circuit** EMD9 / UMD9N IMD9A (3) (2) (1) (4) (5) (6) R1 R2 R1 R2 DTr1 DTr1 DTr2 DTr2 R2 R1 R2 R1 ei R1 = 10k Ω R1 = 10k Ω (4) (5) (6) R2 = 47k Ω (3) (2) (1) R2 = 47k Ω **Package, marking, and packaging specifications** Type EMD9 UMD9N IMD9A Package EMT6 UMT6 SMT6 Marking D9 D9 D9 Code T2R TR T108 Basic ordering unit (pieces) 8000 3000 3000 e ~~S~~ ## **Package, marking, and packaging specifications** ## **Absolute maximum ratings** (Ta=25C) |Parameter|Parameter|Symbol|Limits|Unit| |---|---|---|---|---| |Supply voltage||VCC|50|V| |Input voltage||VIN|−6 to +40|V| |Output current||IO<br>I|70|mA| |Collector current||IC (Max.)|100|mA| |EMD9, UMD9N<br>IMD9A<br>Power dissipation<br>Junction temperature|EMD9, UMD9N|Pd<br>Tj|150(TOTAL)|150(TOTAL)<br>mW<br>∗1| ||IMD9A<br>Junction temperature||300(TOTAL)<br>150|300(TOTAL)<br>mW<br>∗2<br>°C| |Junction temperature||Tj|150|°C| |Storage temperature||Tstg|−55 to +150|55 to +150<br>°C| ∗[1 ][120mW per element must not be exceeded. PNP type negative symbols have been omitted.] ∗[2 ][200mW per element must not be exceeded. PNP type negative symbols have been omitted.] ## **Dimensions** (Unit : mm) **==> picture [139 x 360] intentionally omitted <==** **----- Start of picture text -----**<br> EMD9<br>(4) (3)<br>(5) (2)<br>(6 ) 1.2 (1)<br>1.6<br>SK<br>Each lead has same dimensions<br>ROHM : EMT6<br>Abbreviated symbol : D9<br>UMD9N<br>1.25<br>2.1<br>0.1Min.<br>LemGH Each lead has same dimensions<br>ROHM : UMT6<br>EIAJ : SC-88<br>Abbreviated symbol : D9<br>IMD9A<br>1.6<br>2.8<br>0.3to0.6<br>Ahh Each lead has same dimensions<br>ROHM : SMT6<br>EIAJ : SC-74<br>Abbreviated symbol : D9<br>0.22 0.50.5 1.0 1.6<br>0.13 0.5<br>(4) (3) 0.65<br>0.2 (5) (2) 1.3 2.0<br>(6) 1)(<br>0.65<br>0.15 0.7 0.9<br>to0.10<br>0.3 (6) (1) 0.95<br>)(5 (2) 0.95 1.9 2.9<br>)(4 )(3<br>0.15 0.8 1.1<br>0to0.1<br>**----- End of picture text -----**<br> ## **Electrical characteristics** (Ta=25C) |Parameter|Symbol<br>S==S|Min.<br>S==S|Typ.<br>S==S|Max.<br>S==S~~e~~|Unit<br>~~e~~5|Conditions| |---|---|---|---|---|---|---| |Input voltage|VI(off)<br>S==S|−<br>S==S|−<br>S==S|0.3<br>S==S~~e~~|V<br>~~e~~5|VCC=5V , IO=100μA| ||VI(on)<br>S==S|1.4<br>S==S|−<br>S==S|−<br>S==S~~e~~||VO=0.3V , IO=1mA| |Output voltage|VO(on)<br>S==S|−<br>S==S|0.1<br>S==S|0.3<br>S==S~~e~~|V<br>~~e~~5|IO=5mA , II=0.25mA| |Input current|II<br>S==S|−<br>S==S|−<br>S==S|0.88<br>S==S~~e~~|mA<br>~~e~~5|VI=5V| |Output current|IO(off)|−|−|0.5|mA|VCC=50V , VI=0V| |DC current gain|GI|68|−|−|−|IO=5mA , VO=5V| |∗<br>Transition frequency|fT|−|250|−|MHz|VCE=10V , IE= −5mA , f=100MHz| |Input resistance|R1|7|10|13|kW|−| |Resistance ratio|R2/R1|3.7|4.7|5.7|−|−| PNP type negative symbols have been omitted. ∗ Characteristics of built-in transistor. www.rohm.com **2010.01 - Rev.D** 1/3 ○c 2010 ROHM Co., Ltd. All rights reserved. **EMD9 / UMD9N / IMD9A** Data Sheet ## **Electrical characteristics curves DTr1 (DTC114Y)** **==> picture [140 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> − 100<br>VO =− 0.3V<br>− 50<br>− 20<br>− 10<br>− 5 Ta =− 40 ° C<br>25 ° C<br>− 2 100 ° C<br>− 1<br>− 500m<br>− 200m<br>− 100m<br>− 100 μ − 200 μ − 500 μ − 1m − 2m − 5m − 10m − 20m − 50m − 100m<br>OUTPUT CURRENT : IO (A)<br> (V)<br>I(on)<br>INPUT VOLTAGE : V<br>**----- End of picture text -----**<br> Fig.1 Input voltage vs. output current (ON characteristics) **==> picture [309 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> − 10m 1k<br>− 5m VCC =− 5V 500 Ta = 100 ° C VO =− 5V<br>−− 2m1m 200 − 25 40 °° C C<br>− 500 μ 100<br>− 200 μ Ta = 100 25 ° ° C C 50<br>− 100 μ − 40 ° C<br>− 50 μ 20<br>− 20 μ 10<br>− 10 μ 5<br>− 5 μ<br>− 2 μ 2<br>− 1 μ 0 − 0.5 − 1.0 − 1.5 − 2.0 − 2.5 − 3.0 − 1100 μ − 200 μ − 500 μ − 1m − 2m − 5m − 10m − 20m − 50m − 100m<br>INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A)<br>Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output<br>(OFF characteristics) current<br>I<br> (A)<br>DC CURRENT GAIN : G<br>OUTPUT CURRENT : Io<br>**----- End of picture text -----**<br> **==> picture [140 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> − 1<br>lO/lI = 20<br>− 500m<br>Ta = 100 ° C<br>− 200m 25 ° C<br>− 40 ° C<br>− 100m<br>− 50m<br>− 20m<br>− 10m<br>− 5m<br>− 2m<br>− 1m<br>− 100 μ − 200 μ − 500 μ − 1m − 2m − 5m − 10m − 20m − 50m − 100m<br>OUTPUT CURRENT : IO (A)<br>Fig.4 Output voltage vs. output<br>current<br> (V)<br>O(on)<br>OUTPUT VOLTAGE : V<br>**----- End of picture text -----**<br> www.rohm.com **2010.01 - Rev.D** 2/3 ○c 2010 ROHM Co., Ltd. All rights reserved. **EMD9 / UMD9N / IMD9A** Data Sheet ## **Electrical characteristics curves DTr2 (DTA114Y)** **==> picture [479 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 100 VO = 0.3V 10m VCC = 5V 1k VO = 5V<br>50 5m 500<br>2m Ta = 100 ° C<br>20 1m 200 − 40 25 ° ° C C<br>10 500 μ Ta = 100 ° C 100<br>5 Ta =− 40 ° C 200 μ 25 ° C 50<br>2 10025 °° CC 10050 μμ − 40 ° C 20<br>1 20 μ 10<br>500m 10 μ 5<br>5 μ<br>200m 2<br>2 μ<br>100m 1 μ 1<br>100 μ 200 μ 500 μ 1m 2m 5m 10m 20m 50m 100m 0 0.5 1.0 1.5 2.0 2.5 3.0 100 μ 200 μ 500 μ 1m 2m 5m 10m 20m 50m 100m<br>OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A)<br>Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output<br>(ON characteristics) (OFF characteristics) current<br>I<br> (V) (A)<br>I(on)<br>DC CURRENT GAIN : G<br>INPUT VOLTAGE : V OUTPUT CURRENT : Io<br>**----- End of picture text -----**<br> **==> picture [139 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>lO/lI = 20<br>500m<br>200m Ta = 100 ° C<br>100m − 25 40 ° ° C C<br>50m<br>20m<br>10m<br>5m<br>2m<br>1m<br>100 μ 200 μ 500 μ 1m 2m 5m 10m 20m 50m 100m<br>OUTPUT CURRENT : IO (A)<br>Fig.4 Output voltage vs. output<br>current<br> (V)<br>O(on)<br>OUTPUT VOLTAGE : V<br>**----- End of picture text -----**<br> www.rohm.com **2010.01 - Rev.D** 3/3 ○c 2010 ROHM Co., Ltd. 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Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. **==> picture [80 x 61] intentionally omitted <==** Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. R1010A
Updated at February 9, 2023
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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