IMD16AT108

## Power management (dual digital transistors) 

## **IMD16A** 

## **Features** 

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Dimensions  (Unit : mm)<br>**----- End of picture text -----**<br>


1) Two digital class transistors in a SMT package. 

2) Up to 500mA can be driven. 

3) Low VCE(sat) of drive transistors for low power dissipation. 

## **Package, marking, and packaging specifications** 

|Part No.|IMD16A|
|---|---|
|Package|SMT6|
|Marking|D16|
|Code|T108|
|Basic ordering unit (pieces)|3000|



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(4) (5) (6)<br>i} tl Gl<br>(3) (2) (1)<br>ROHM : SMT6<br>EIAJ : SC-74 Each lead has same dimensions<br>**----- End of picture text -----**<br>


## **Absolute maximum ratings** (Ta=25°C) DTr1 (PNP) 

|DTr1 (PNP)1 (PNP)(PNP)||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Supply voltage|VCC|−50|V|
|Input voltage|VIN|−12|V|
|||5||
|Output current|IC|−500|mA|



## DTr2 (NPN) 

## **Inner circuit** 

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(4) (5) (6)<br>R2 = 22k Ω<br>R1 = 2.2k Ω<br>DTr1<br>DTr2<br>R1 = 100k Ω<br>(3) (2) (1)<br>**----- End of picture text -----**<br>


|DTr2 (NPN)2 (NPN)(NPN)||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Collector-base voltage|VCBO|50|V|
|Collector-emitter voltage|VCEO|50|V|
|Emitter-base voltage|VEBO|5|V|
|Collector current|IC|100|mA|



## Total 

|Total||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Collector power dissipation|Pd<br>∗|300(TOTAL)|mW|
|Junction temperature|Tj|150|°C|
|Storage temperature|Tstg|−55 to+150|°C|



∗[200mW per element must not be exceeded.] 

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**2009.06 - Rev.E** 

1/3 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**IMD16A** 

## � **Electrical characteristics** (Ta=25°C) DTr1 

|�**Electrical characteristics**(Ta<br>DTr1|=25°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Input voltage|VI(off)|−|−|−0.3|V|VCC= −5V , IO= −100µA|
||VI(on)|−2|−|−||VO= −0.3V , IO= −20mA|
|Output voltage|VO(on)|−|−|−0.3|V|IO/II= −50mA /−2.5mA|
|Input current|II|−|−|−3|mA|VI= −5V|
|Output current|IO(off)|−|−|−0.5|µA|VCC= −50V , VI=0V|
|DC current gain|GI<br>∗1|82|−|−|−|IO= −50mA , VO= −5V|
|Transition frequency|fT<br>∗2|−|250|−|MHz|VCE= −10V , IE=50mA , f=100MHz|
|Input resistance|R1|1.54|2.2|2.86|kΩ|−|
|Resistance ratio|R2/ R1|8|10|12|−|−|



∗[1 Measured using pulse current.    ] ∗[2 Transition frequency of mounted transistor.] 

## DTr2 

|DTr2|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Collector-base breakdown voltage|BVCBO|50|−|−|V|IC=50µA|
|Collector-emitter breakdown voltage|BVCEO|50|−|−|V|IC=1mA|
|Emitter-base breakdown voltage|BVEBO|5|−|−|V|IE=50µA|
|Collector cutoff current|ICBO|−|−|0.5|µA|VCB=50V|
|Emitter cutoff current|IEBO|−|−|0.5|µA|VEB=4V|
|Collector-emitter saturation voltage|VCE(sat)|−|−|0.3|V|IC/IB=1mA/0.1mA|
|DC current transfer ratio|hFE|100|250|600|−|VCE=5V , IC=1mA|
|Transition frequency|∗<br>fT|−|250|−|MHz|VCE=10V , IE=−5mA , f=100MHz|
|Input resistance|R1|70|100|130|kΩ|−|



∗[Transition frequency of mounted transistor.] 

www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 

**2009.06 - Rev.E** 

2/3 

Data Sheet 

**IMD16A** 

## � **Electrical characteristic curves** DTr1 (PNP) 

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100<br>VO = 0.3V<br>50<br>20<br>10 Ta = − 40 ° C<br>5 Ta = 25 ° C<br>Ta = 100 ° C<br>2<br>1<br>500m<br>200m<br>100m<br>500 µ 1m 2m 5m 10m 20m 50m 100m 200m 500m<br>OUTPUT  CURRENT : IO (A)<br>Fig.1   Input voltage vs. Output current<br>           (ON characterisitics)<br>1<br>IO/II = 20/1<br>500m<br>200m Ta = 100 ° C Ta = 25 ° C<br>100m<br>50m<br>Ta = − 40 ° C<br>20m<br>10m<br>5m<br>2m<br>1m<br>500 µ 1m 2m 5m 10m 20m 50m 100m 200m 500m<br>OUTPUT CURRENT : IO (A)<br>Fig.4   Output voltage vs.<br>           Output current characteristics<br> (V)<br>I(on)<br>INPUT  VOLTAGE : V<br> (V)<br>O(on)<br>OUTPUT  VOLTAGE : V<br>**----- End of picture text -----**<br>


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10m 1k<br>VCC = 5V VO = 5V<br>5m 500<br>2m Ta = 100 ° C<br>1m 200 Ta = 25 ° C<br>500 µ Ta = 100 ° C 100 Ta = − 40 ° C<br>200 µ Ta = 25 ° C 50<br>100 µ Ta = − 40 ° C<br>50 µ 20<br>20 µ 10<br>10 µ 5<br>5 µ<br>2 µ 2<br>1 µ 1<br>0 500m 1 1.5 2 2.5 3 500 µ 1m 2m 5m 10m 20m 50m 100m 200m 500m<br>INPUT  VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A)<br>Fig.2   Output current vs. Input voltage Fig.3   DC current gain vs.<br>           (OFF characteristics)            Output current characteristics<br>I<br> (A)<br>DC CURRENT GAIN : G<br>OUTPUT  CURRENT : Io<br>**----- End of picture text -----**<br>


## DTr2 (NPN) 

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1k 1<br>500 Ta = 100 ° C VCE = 5V 500m IC/IB = 10/1<br>200 200m<br>10050 Ta = 25 ° C Ta = − 40 ° C 100m50m Ta = 100 ° C Ta = 25 ° C<br>20 20m<br>10 10m Ta = − 40 ° C<br>5 5m<br>2 2m<br>1 1m<br>10 µ 20 µ 50 µ 100 µ 200 µ 500 µ 1m 2m 5m 10m 10 µ 20 µ 50 µ 100 µ 200 µ 500 µ 1m 2m 5m 10m<br>COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)<br>Fig.5   DC current gain vs.  Fig.6   Output voltage vs.<br>           Output current characteristics            Output current characteristics<br>(V)<br>CE(sat)<br>FE<br>DC CURRENT GAIN : h<br>COLLECTOR SATURATION VOLTAGE : V<br>**----- End of picture text -----**<br>


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**2009.06 - Rev.E** 

3/3 

○c 2009 ROHM Co., Ltd. All rights reserved. 

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