Illustrative purposes only
IMD10AMT1G
Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 500 mA, 130 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Pre-Biased / Digital Bipolar Transistors
- Product variants: No other variants available. No other names.
- No. of Pins: 6 Pin
- Power Dissipation: 285mW
- RF Transistor Case: SOT-26
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN and PNP Complement
- Transistor Case Style: SOT-26
- Base Input Resistor R1: 130ohm
- DC Current Gain hFE Min: 100hFE
- Resistor Ratio, R1 / R2: 0.012(Ratio)
- Operating Temperature Max: 150°C
- Digital Transistor Polarity: NPN and PNP Complement
- Continuous Collector Current: 500mA
- Continuous Collector Current Ic: 500mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: 50V
- Collector Emitter Voltage V(br)ceo: 50V
| Delivery and price | |
|---|---|
| Units per pack | 45000 |
| Price | 0.097 € |
| Current stock | 299 |
| Lead time | 7 days |
Datasheet
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