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IKY50N120CH3XKSA1
IGBT, 100 A, 2 V, 652 W, 1.2 kV, TO-247, 4 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:652W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Power Dissipation: 652W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.37 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
IKY50N120CH3
## **Features:**
vj=175°C
CE(sat) Q G
http://www.infineon.com/igbt/
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKY50N120CH3|1200V|50A|2V|175°C|K50MCH3|PG-TO247-4-2|
Datasheet www.infineon.com
2017-06-09
IKY50N120CH3
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## High�speed�switching�series�third�generation�IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKY50N120CH3
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## High�speed�switching�series�third�generation�IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=135°C|_I_C||100.0<br>50.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||200.0|A|
|Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||200.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||100.0<br>50.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||200.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=135°C|_P_tot||652.0<br>173.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-C)||-|-|0.23|K/W|
|Diode thermal resistance,1)<br>junction - case|_R_th(j-C)||-|-|0.42|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
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## High�speed�switching�series�third�generation�IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.50|2.35<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.85|2.30<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.25mA,_V_CE=_V_GE|5.1|5.8|6.5|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>4000|350<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|17.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3269|-|pF|
|Output capacitance|_C_oes||-|355|-||
|Reverse transfer capacitance|_C_res||-|199|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=50.0A,<br>_V_GE=15V|-|235.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|32|-|ns|
|Rise time|_t_r||-|28|-|ns|
|Turn-off delaytime|_t_d(off)||-|296|-|ns|
|Fall time|_t_f||-|29|-|ns|
|Turn-on energy|_E_on||-|2.30|-|mJ|
|Turn-off energy|_E_off||-|1.90|-|mJ|
|Total switchingenergy|_E_ts||-|4.20|-|mJ|
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## High�speed�switching�series�third�generation�IGBT
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=50.0A,<br>_di_F_/dt_=1200A/µs|-|255|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|3.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|33.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-620|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|31|-|ns|
|Rise time|_t_r||-|31|-|ns|
|Turn-off delaytime|_t_d(off)||-|397|-|ns|
|Fall time|_t_f||-|65|-|ns|
|Turn-on energy|_E_on||-|4.30|-|mJ|
|Turn-off energy|_E_off||-|4.00|-|mJ|
|Total switchingenergy|_E_ts||-|8.30|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=50.0A,<br>_di_F_/dt_=1200A/µs|-|370|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|8.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|52.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-460|-|A/µs|
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100 LAFTT 700600 KP Pp td<br>= eA INT IN\<br>not for linear use<br>x co ee a ce 500 \<br>Be LA L U<br>WW | =) 10 RtTM TI =Zz 400 PEN\<br>adO a2)<br>65 ytFeTTT SS So 300 PP IN LT<br>ee PT TTT EP or \<br>SN° 1 a _————————————eeE——LUNE eeeLEME ®. 200 \<br>PTTT<br>ee 100 \<br>0.1 0<br>SHH = LE| TN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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100 200<br>VGE=20V<br>90 TREELLI 175 Doty 17V<br>15V<br>80<br>aN TY<br>150 13V<br>2} NX 1/7<br>70<br>E 11V<br>E |Al fz S/n<br>125 9V<br>ee: 60 SLi<br>a) a) 7V<br>ee 50 ee 100 SWZ<br>5V<br>O O<br>40<br>fp ee NN<br>75<br>30<br>pf Ne 50 PONRA[PKXN<br>20 25 ye\\<br>Tee V\\N<br>10<br>Py) LAN<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5 6<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
200 200<br>VGE=20V Tvj = 25°C<br>Tvj = 175°C<br>175 ENA 17V \/ 175 are— a [/<br>15V<br>150 13V N 150 /<br>11V<br>Zz:Z NAQA //// 4] Zz:<br>125 9V 125<br>rd P NY ? rd /<br>& 7V XXX Xy/ &<br>3 100 \ SS s 3 100 / /<br>a 5V ‘ eeewes =| ow8<br>75 75<br>EL Nm Ee<br>50 SIS 50<br>25 25<br>0 aNN 0 ZA<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14 16 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>4.5 1000 aa<br>IICC = 25A = 50A aa ee ee<br>Ss 4.0 IC = 100A Te cL a eeeeee ee ee<br>Pf T e) a td(off) S<br>3.5 tf<br>td(on)<br>tr<br>Ploy<br>3.0<br>| lye fe<br>o =<br>nT= 2.5 eo g 100 a a<br>a Heo aa or= aEe<br>O5 2.0 ~eeo FE= pOa ee rit ee eee<br>(LEE) SSS<br>1.5<br>a i eee<br>i ee<br>1.0<br>0.5 10<br>25 50 75 100 125 150 175 0 20 40 60 80 100<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
_V_ GE =0/15V, _R_ G=10 Ω Figure E)
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td(off) td(off)<br>tf tf<br>1000 td(on) 1000 td(on)<br>tr tr<br>F 1 a f ee o 1 a a o a<br>a e e ee eee a<br>aa ee e eee ee<br>ee ee ee ee e e<br>ow Pee} CO<br>ee<br>= =<br>oO oO<br>Zz Zz<br>100 100<br>5 a ee es 5 a es<br>E a a a ee a a<br>= a ee = a ee<br>a po e e eee ae ee ee ee<br>~ aa ee ee - a ee eeeee<br>fpeeper yyee ee reeeee ee e ee<br>10 10<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =50A, Dynamic test circuit in I C =50A, R G=10 , Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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8 25<br>typ. Eoff<br>min. Eon<br>max. Ets<br>7<br>Ww<br>20<br>< =I f<br>O 6 ~>~ op) /<br>> SL Lu<br>Qa ~~ ~~ . 8 /<br>S5 5 — ~~ ohys o> 15 7 /<br>oc ~ NY a Wa<br>- ~ s Ww<br>.i 4 TN— a = ~ aio Yc /’<br>10<br>E NN Z 2 ,<br>UWWw= 3 ™ 5E 4 Z VY<br>5<br>oO . > Z i a<br>2<br>1 0<br>25 50 75 100 125 150 175 0 20 40 60 80 100<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
( _I_ C =1,25 mA) (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G=10 Ω , Dynamic test Figure E)
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**----- Start of picture text -----**<br>
16 9<br>Eoff Eoff<br>Eon Eon<br>14 Ets 8 Ets<br>7<br>. 12 oT |, J o e ee<br>Ww 4 Ww Pea<br>7)o L Pa ep)7) 6 “7<br>fo) 10 = fo) oa<br>> 8 “ane oo i? >t 5 _= a et iL<br>ii Wa oa i 4 c = a=<br>6<br>3<br>7 Le<br>=Bp 4 oeva = —_|e<br>~~ 2 =<br>y<br>2<br>1<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, I C =50A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =50A, _R_ G=10 , Dynamic test circuit Figure E)
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**----- Start of picture text -----**<br>
12<br>Eoff<br>Eon<br>Da“<br>Ets<br>a<br>10<br>S a“<br>& a<br>i oa<br>8 8<br>(op) 7<br>@) 7<br>- ae<br>[ag i?<br>Wi 6 z<br>Zz “ce Za<br>Ww - a<br>g y<br>~~ |<br>4<br>Se fie<br>—_<br>7 2 : ~<br>0<br>400 450 500 550 600 650 700 750 800<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E<br>**----- End of picture text -----**<br>
Figure 15.
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16 Ld<br>V CC<br>V CC<br>— = 240V / /<br>14 —- CT =960V Jf<br>12<br>S a,<br>WW /<br>x /<br>=<br>4 10 Es<br>ro)<br>Lu<br>E 8<br>=<br>S<br>ui<br>6<br>:<br>4<br>|<br>2<br>0<br>0 50 100 150 200 250 300<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 16. Typical ( _I_ C=50A)
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**----- Start of picture text -----**<br>
T vj =175°C, V GE=0/15V,<br>**----- End of picture text -----**<br>
_I_ C =50A, _R_ G=10 Figure E)
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1E+4 aa 450<br>| | Cies a ee es ee<br>= a a<br>Coes<br>Cres 400<br>——— —_—_——— x<br>a e ee 350 /<br>\ a<br>L 1000 R s 300 Ee<br>u PN w 4<br>ee<br>O iee ee Oe /<br>z PONa a 4 250 /<br>a i = 200 Z<br>& 5 /<br>~ O<br>100 150<br>ee ce Z|<br>ie<br>a ee eesees Oa[Sd 100 7v44<br>50<br>10 0<br>0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 600V, T vj 175°C)<br>45<br>D = 0.5<br>| 0.2 pe<br>40 Py EE. EE LLY Fou HT CHET<br>> = 0.1 0.1 NUE ee LH<br>3 EE 0.05<br>aT 35 Lu7 DNoti Seat ee c7aati<br>S 9 NEP 0.02 TATIT<br>0.01<br>= Z Fs Ne CTE<br>30<br>: : single pulse<br>S D ee aT<br>pe sn 40UN<br>0.01<br>kK=<= 25 i\iot) [TE] >xt beyNNR| | |<br>= S PATNAee ee<br>- Eh Fo CONECn<br>5 20 Tm P—TTIN MATTIE<br>9 CCID PAI AMIE EETETCETTl<br>: BENG PETIT<br>15<br>) LAMA<br>0.001<br>r LAI FIM UI i)<br>oer= ~> s7)2 Aee oe | Re-- T{ i<br>”> 105 Py fo} aANSN FE- eeALANa PEel|I eit: Ca=teiRe HITilill<br>| ++ a | eee i: 1 a 2 3 4 5<br>ri[K/W]: 0.027716 0.073554 0.124423 2.6E-3 3.2E-4<br>τ i[s]: 3.9E-4 2.7E-3 0.018807 0.524934 12.39161<br>Se<br>0 1E-4<br>10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal resistance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 600V, start at T vj ≤ 175°C)<br>C<br>I C(SC)<br>t SC c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
800<br>BMT D = 0.5 e Tvj e = 25°C, IF = 50A<br>= 0.2 sett A Te a Tvj = 175°C, IF = 50A<br>700<br>0.1<br>= pel<br>— 0.1 LSM 0.05 rh eS7A TEIl \<br>Zz 0.02 A7,| 600<br><x CCA 0.01 5<br>FTA TTI Ww<br>MinRe© PSNI single pulse xen LWLY =ieF 500 X\<br>LNNMEAUIITEUILT<br><x= 0.01 ENTIALdil LIT LIU uw> 400 NN ~<br>aw ECS AO tC «=| ‘ NI<br>WW eePT TNT 7A i O NX ~<br>IF2 INaa) a || oW 300 NNSS N ~ =<br>aZ 0.001 a Ry R2 a<br>200<br>s PTJfVI p= -- HiLF © .<br>AREAPA ee eee ect cy i<br>100<br>7h EST i: 1 2 3 TE 4 5 Ty<br>ri[K/W]: 0.05893 0.16211 0.18928 5.4E-3 3.7E-4<br>τ i[s]: 3.8E-4 2.7E-3 0.01654 0.37453 11.69172<br>1E-4 0<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 400 600 800 1000 1200 1400<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 21.
( _D_ = _t_ p/T)
Figure 22. Typical of diode ( _V_ R=600V)
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**----- Start of picture text -----**<br>
12 70<br>Tvj = 25°C, IF = 50A Tvj = 25°C, IF = 50A<br>Tvj = 175°C, IF = 50A Tvj = 175°C, IF = 50A<br>es | |<br>60<br>10<br>oO ~~ x y<br>=a =<br><x4w 8 ~ > —_ Ww:w 50 Baaeeey y7<br>O oO v2<br>or> or> 40<br>uw Ww 4<br>6<br>: Zea<br>imor ow° 30 eaea<br>4 4<br>20<br>2<br>10 ef] tf]<br>0 0<br>400 600 800 1000 1200 1400 400 600 800 1000 1200 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23.
( _V_ R=600V)
Figure 24.
( _V_ R=600V)
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**----- Start of picture text -----**<br>
0 200<br>Tvj = 25°C, IF = 50A Tvj = 25°C<br>-100 Tvj = 175°C, IF = 50A Tvj = 175°C<br>Fy) 175 Ee 7<br>~ /<br>-200<br>NON e e |<br>g =~ 150 I)<br>-300<br><, \ = /<br>125<br>eo=8 -400 NN: >» ~ 3imnd / /<br>ef TNS~OJe Es<br>2 -500 100<br>x<br>© \ \ Qo //<br>oO \ \ x /<br>-600<br>Po3 NES 75 i<br>-700<br>50<br>NN<br>-800<br>25<br>-900<br>PTT<br>-1000 0<br>FT y y L L<br>400 600 800 1000 1200 1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=600V)
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**----- Start of picture text -----**<br>
3.5<br>IF = 25A<br>IF = 50A<br>IF = 100A<br>3.0<br>2.5<br>ke<br>I<br>O<br>><br>Ww ae<br>Q 2.0<br>aa<br><x<br>x<br>O<br>1.5<br>1.0<br>0.5<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
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## High�speed�switching�series�third�generation�IGBT
## **PG-TO247-4-2**
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**----- Start of picture text -----**<br>
M<br>A<br>E<br>A2 E2<br>R<br>b2<br>b4<br>E3 b6 H<br>2x<br>E1<br>1 2 3 4<br>b 4 3 2 1<br>e1 A1<br>e<br>b7<br>c<br>D3<br>D1 D D2<br>D4<br>N<br>L1<br>L<br>**----- End of picture text -----**<br>
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PACKAGE SURFACE ROUTE BETWEEN PIN 1 & PIN 2 WILL BE 5.1mm MIN.
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**----- Start of picture text -----**<br>
MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A 4.9 5.1<br>A1 2.31 2.51<br>A2 1.9 2.1<br>b 1.16 1.29<br>b2 1.36 1.49<br>b4 2.16 2.29<br>b6 1.16 1.45<br>b7 1.16 1.65<br>c 0.59 0.66<br>D 20.9 21.1<br>D1 22.3 22.5<br>D2 15.95 16.55<br>D3 1 1.35<br>D4 1.6 1.8<br>E 15.7 15.9<br>E1 3.9 4.1<br>E2 13.1 13.5<br>E3 2.58 2.78<br>e 2.54<br>e1 5.08<br>H 0.8 1<br>L 19.8 20.1<br>L1 2.55 2.85<br>M 0.97 1.57<br>N 3.24 3.44<br>R 1.9 2.1<br>**----- End of picture text -----**<br>
ALL b... AND c DIMENSIONS INCLUDING PLATING EXCEPT AREA OF CUTTING
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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00182798<br>REVISION<br>01<br>SCALE 2:1<br>0 5 10mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>23.09.2016<br>**----- End of picture text -----**<br>
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## High�speed�switching�series�third�generation�IGBT
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## High�speed�switching�series�third�generation�IGBT
## **Revision�History**
IKY50N120CH3
## **Revision:�2017-06-09,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-04-26|Final data sheet|
|2.2|2017-06-09|Update Figure 26|
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Datasheet
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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