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IKY40N120CS6XKSA1
IGBT, 80 A, 1.85 V, 500 W, 1.2 kV, TO-247, 4 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: TRENCHSTOP IGBT6
- Power Dissipation: 500W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.24 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IKY40N120CS6
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High speed soft switching TRENCHSTOP TM _ IGBT 6 in Trench and Fieldstop<br>**----- End of picture text -----**<br>
## **Features:**
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**----- Start of picture text -----**<br>
1200V TRENCHSTOP TM _ IGBT6 technology offering:<br>* High efficiency in hard switching and resonant<br>¢ Easy paralleling capability due to positive<br>coefficient in V CEsat<br>« Low EMI<br>g<br>**----- End of picture text -----**<br>
http://www.infineon.com/igbt/
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKY40N120CS6|1200V|40A|1.85V|175°C|K40MCS6|PG-TO247-4-2|
Datasheet www.infineon.com
2018-05-07
IKY40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKY40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤0.5µs,_D_<0.001)|_V_GE||±20<br>25|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||500.0<br>250.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
## **Thermal�Resistance**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.30|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.78|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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IKY40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.85<br>2.15<br>2.25|2.15<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.25|2.55<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.90mA,_V_CE=_V_GE|5.1|5.7|6.3|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1600|850<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|32.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2700|-|pF|
|Output capacitance|_C_oes||-|185|-||
|Reverse transfer capacitance|_C_res||-|120|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|285.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|27|-|ns|
|Turn-off delaytime|_t_d(off)||-|315|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|1.45|-|mJ|
|Turn-off energy|_E_off||-|1.55|-|mJ|
|Total switchingenergy|_E_ts||-|3.00|-|mJ|
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IKY40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=1650A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|255|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|39.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-450|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|390|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|2.05|-|mJ|
|Turn-off energy|_E_off||-|2.95|-|mJ|
|Total switchingenergy|_E_ts||-|5.00|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=1650A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|360|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|5.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|53.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-580|-|A/µs|
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IKY40N120CS6
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160<br>VGE=20V<br>100<br>17V<br>140<br>ren Ati eon eaceal| aa ea 15V NON<br>not for linear use<br>— SS 120 13V e/a<br>11V<br>= a = SH<br>10 100 9V<br>7V<br>80<br>imSO fTeeCCM ComTei]ee im8 60 Pe \Y\f<br>= 4 ify<br>1<br>40<br>i a 7 eee<br>20<br>Oo Con yo<br>0.1 0<br>COT mr ) «= | _ EN<br>1 10 100 1000 0 1 2 3 4 5 6<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area Figure 2. Typical output characteristic<br>( D =0, T vj 175°C; V GE =15V, pulse width ( T vj=25°C)<br>limited by Tvjmax)<br>160 160<br>VGE=20V Tvj = 25°C<br>Tvj = 175°C<br>140 PNY) 17V 140 Ef<br>15V<br>120 13V ANA 120<br>z 11V SSy lar<br>100 9V 100<br>: SW 2a<br>7V<br>80 80<br>NN]<br>PL 60 NW EL 60<br>Va ef<br>40 40<br>20 20<br>fr| pe<br>AS<br>0 0<br>U L L<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>I C I C<br>**----- End of picture text -----**<br>
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Datasheet
2018-05-07
IKY40N120CS6
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4.0 1000 a ESSS<br>ass ee<br>IC = 20A es a a a<br>IC = 40A<br>_ 3.5 | IC = 80A a a ee ee ee eees eee<br>é ue pee td(off) s oe<br>tf<br>3.0 td(on)<br>tr<br>g - = {--<br>100<br>2.5<br>[a Lu a a a<br>bu F= a e e sedes eens ee eecteee<br>2.0<br>E OQ a ee eee ee ee<br>oc<br>pee ees<br>1.5<br>10<br>|5 7 poa ss<br>ae5O~ 1.0 __—___——aa eeee eeee ee ee<br>0.5<br>PF | | | | | | ft<br>0.0 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 5. Typical collector-emitter saturation voltage as Figure 6. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, R G=9 Ω , Dynamic test circuit in<br>Figure E)<br>1000 aa<br>a<br>td(off) pT<br>1000 tf<br>td(on)<br>H— tr aSSSa——] 0 FSS<br>ee a ee es or<br>td(off)<br>tf<br>td(on)<br>100 tr<br>Yn p pt hrs c Bee<br>100<br>~ es ip)~ p a ee eso<br>= a Sc ae ee ee ee<br>> poeee<br>SoSf eee Pe nprooespennenenssssesuenssssss<br>= owe | | | =<br>2)° 10 [_ee 2)° 10 areee<br>a a a<br>ee es<br>a poof |<br>1 1<br>0 5 10 15 20 25 30 35 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical switching times as a function of gate Figure 8. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=9=9 , Dynamic test circuit in Figure<br>Figure E) E)<br>t<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
_I_ C =40A, _R_ G=9=9 7 E)
2018-05-07
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8 10<br>typ. Eoff<br>min. 9 Eon<br>max. Ets<br>Ww 7 /<br>8<br>< =) ‘<br>FE & /¢<br>O 7p) /<br>Qo> 6 HMio) 7 v7<br>e)= = ae ~ssS fe)> 6 . /<br>ao > ~e, wv ¢<br>5 5<br>= = ~~ | ~ Ww 7 7 L S|<br>Ww: ~ O 4 / 7<br>= 4 y<br>: 4 PONIES Eee [2]<br>E SN aE<br>Wl ~ Ee 3 A Lp<br>uw Wa -<br>oO - 2 7 / =<br>~ 3 \Y~ |b"<br>1 / Lo<br>-<br>2 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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Figure 9. Gate-emitter<br>of junction<br>( I C=1.9mA)<br>**----- End of picture text -----**<br>
Figure 10.
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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, R G=9 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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10 6<br>Eoff Eoff<br>9 Eon Eon<br>Ets Ets<br>EE) LL) OE<br>“ 5 :<br>— 8 a ome a<br>7<br>(op)7) ”, icp)7) 4 o -*<br>—! 6 —! -*<br>> “ ya “"<br>©) , ©) oor<br>5 3<br>ii ? a<br>2 4 a“ ria ii =<br>° = 2<br>2<br>3<br>Fe eT Fe =a<br>n7n<br>i a<br>2<br>7<br>1<br>1<br>0 0<br>0 5 10 15 20 25 30 35 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=9 , Dynamic test circuit in<br>Datasheet Figure E) 8 Figure E)<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
2018-05-07
IKY40N120CS6
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**----- Start of picture text -----**<br>
8 3000<br>Eoff Tvj = 25°C<br>Eon Tvj = 175°C<br>7 Ets<br>= | oa<br>” 2500 |<br>5= 6 of o gS<br>Lu va w<br>2000<br>O 5 c .<br>ao o Yn<br>> ae<br>x a Lu<br>uw 4 > w 1500 \<br>Zz of ee a<br>aaZ 3 = —T aa ra ‘ N.<br>L 4 1000<br>-” - -<br>- bea<br>2<br>= T fs OSS<br>_<br>500<br>1<br>0 0<br>400 450 500 550 600 650 700 750 800 0 5 10 15 20 25 30 35<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] R G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical diode current slope as a function<br>function of collector emitter voltage gate resistor<br>(inductive load, T vj =175°C, V GE=0/15V, (inductive load, V CE =600V, V GE=0/15V,<br>I C R G=9=9 I C<br>/dt<br>F<br>E di<br>**----- End of picture text -----**<br>
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I C =40A, R G=9=9<br>Figure E)<br>**----- End of picture text -----**<br>
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16 1E+4<br>V CC Cies<br>— V CC = 240V 7 H Coes a ee ee<br>14 —7 a= 960V / y, iI Cres p ao<br>[CS<br>= 12 e s<br>o)<x // _LL 1000 Sa OS<br>F 10 & A<br>re) / Ww Oc<br>> 7 (S) NR<br>W 8 —r _ 2 A<br>pot = |p Nes}<br>WW<br>6<br>: 2.<br><x 100 a ee<br>.<br>4 ee<br>a<br>2<br>a a<br>0 10<br>0 50 100 150 200 250 300 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>
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Datasheet
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IKY40N120CS6
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RE 1 Se eet eet eet seenitieeani<br>= THA LT TTA LelA eral | OOo oo Cee Ooo Oo<br>= eg Y = eee TT<br>D = 0.5 D = 0.5<br>ree 0.1 A<traALA HMA SCMeeTAT<br>0.2 0.2<br>ge 0.1 tte 2 TMT 0.1 ||<br>0.1<br>ei caeniii 7 eae maria a 7 Al<br>0.05 0.05<br>gE 2 ee ei<br>0.02 0.02<br>a eae ae CWT UII & Sati see! aati eeemm<br>0.01 0.01<br>single pulse single pulse<br>uiFFSY A Af 7<br>ii5AE 0.01 a Po 20 su)A 5 0.01 EaFa@illieaallLe py<br>a cella 2 24 2 D etry cet Cn Ce<br>2 PLZT ACU TeR R 2 | SY EYiA Ro iatii<br>a A) I YZ --{l| s a -- Til<br>Fa e| Yf e e eF a)A ll<br>ANN AN UAE T T Cc ST Ti<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5<br>ri[K/W]: 9.4E-4 0.056801 0.070049 0.170338 8.0E-3 1.6E-3 ri[K/W]: 0.17605 0.29816 0.29355 0.0141 2.2E-3<br>τ i[s]: 2.5E-5 3.4E-4 3.1E-3 0.016587 0.224027 2.909819 τ i[s]: 3.1E-4 2.8E-3 0.01518 0.20937 2.46001<br>0.001 | _ 0.001 /;dh a a |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. Figure 18.<br>( IGBT D = t p/T) transient thermal resistance functionDiode transientof pulse eetwidt impedance as a<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 18. ( _D_ = _t_ p/T)
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800 SE | 8 SS<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A Tvj = 175°C, IF = 40A<br>700 (| E 7 ss |<br>\ g<br>a N o o ee pe<br>600 6<br>z 7 \ Wl -<br>Lu Y ~<br>PRN ee<br>>PINON 500 Sye 5 =<br>400 4<br>\.<br>M;<br>W<br>300 3<br>ti N ~s tu<br>200 Pp] | SLES 2 —<br>100 aa 1 PP id ttt<br>0 0<br>500 750 1000 1250 1500 1750 2000 2250 2500 500 750 1000 1250 1500 1750 2000 2250 2500<br>di F /dt , DIODE CURRENT SLOPE [A/s] di F /dt , DIODE CURRENT SLOPE [A/s]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
> Figure 19. Typical of diode ( _V_ R=600V)
Figure 20.
( _V_ R=600V)
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IKY40N120CS6
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80 0<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A -200 Tvj = 175°C, IF = 40A<br>70 = i Nee<br>a NO<br>_ -400<br>e|/ <= 60 fo)ody, FeNE EE<br>i : oe -600 e e<br>a 7 \<br>50<br>O 4 4 =<br>-800<br>: “ligg | NA<br>pL 7 £<br>Q 40 OT 1000 NA<br>: Z ZO 2 |<br>= 4 pti 1200 A<br>uw 30 Ana s \\<br>uw et 1400 ttt AN<br>Bee q o<br>ait 20 A ZO se) -1600 \ Y<br>10<br>-1800<br>Pt ttt ted<br>0 -2000<br>500 750 1000 1250 1500 1750 2000 2250 2500 500 750 1000 1250 1500 1750 2000 2250 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=600V)
Figure 22.
( _V_ R=600V)
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**----- Start of picture text -----**<br>
3.0 160<br>Tj=25°C, IF = 40A Tvj = 25°C<br>Tj=175°C, IF = 40A Tvj = 175°C<br>= 140 EJ<br>_ f/f<br>ot 2.5 — ft im/<br>£ Tot /<br>TTS 120<br>2.0 ke<br>100<br>O ao<br>or =)<br>uw: 1.5 :) 80 PL<br>Z S<br>)Ice& 60 i}<br>1.0<br>=.<br>n<br>40<br>0.5<br>20 P| f tt i.<br>0.0 0<br>500 900 1300 1700 2100 2500 0 1 2 3 4 5 6<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I F<br>E<br>**----- End of picture text -----**<br>
Figure 23. Typical of diode ( _V_ R=600V)
Figure 24.
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4.0<br>IF = 20A<br>IF = 40A<br>3.5 IF = 80A<br>3.0<br>Lu<br>Oo<br><x 2.5<br>Kk<br>I<br>O<br>QSe 2.0<br>2 1.5 | | |fT<br>; 1.0 P| | tt<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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Datasheet
2018-05-07
IKY40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **PG-TO247-4-2**
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**----- Start of picture text -----**<br>
M<br>A<br>E<br>A2 E2<br>R<br>b2<br>b4<br>E3 b6 H<br>2x<br>E1<br>1 2 3 4<br>b 4 3 2 1<br>e1 A1<br>e<br>b7<br>c<br>D3<br>D1 D D2<br>D4<br>N<br>L1<br>L<br>**----- End of picture text -----**<br>
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PACKAGE SURFACE ROUTE BETWEEN PIN 1 & PIN 2 WILL BE 5.1mm MIN.
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**----- Start of picture text -----**<br>
MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A 4.9 5.1<br>A1 2.31 2.51<br>A2 1.9 2.1<br>b 1.16 1.29<br>b2 1.36 1.49<br>b4 2.16 2.29<br>b6 1.16 1.45<br>b7 1.16 1.65<br>c 0.59 0.66<br>D 20.9 21.1<br>D1 22.3 22.5<br>D2 15.95 16.55<br>D3 1 1.35<br>D4 1.6 1.8<br>E 15.7 15.9<br>E1 3.9 4.1<br>E2 13.1 13.5<br>E3 2.58 2.78<br>e 2.54<br>e1 5.08<br>H 0.8 1<br>L 19.8 20.1<br>L1 2.55 2.85<br>M 0.97 1.57<br>N 3.24 3.44<br>R 1.9 2.1<br>**----- End of picture text -----**<br>
ALL b... AND c DIMENSIONS INCLUDING PLATING EXCEPT AREA OF CUTTING
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DOCUMENT NO.<br>Z8B00182798<br>REVISION<br>01<br>SCALE 2:1<br>0 5 10mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>23.09.2016<br>**----- End of picture text -----**<br>
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IKY40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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V�2.1 2018-05-07
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IKY40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Revision�History**
IKY40N120CS6
## **Revision:�2018-05-07,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-05-07|Final data sheet|
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V�2.1 2018-05-07
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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