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IKY40N120CH3XKSA1
IGBT, 80 A, 2 V, 500 W, 1.2 kV, TO-247, 4 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:4P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Power Dissipation: 500W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.46 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
IKY40N120CH3 ## **Features:** vj=175°C CE(sat) Q G http://www.infineon.com/igbt/ ## **Applications:** |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKY40N120CH3|1200V|40A|2V|175°C|K40MCH3|PG-TO247-4-2| Datasheet www.infineon.com 2017-06-09 IKY40N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.2 2017-06-09 Datasheet IKY40N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=134°C|_I_C||80.0<br>40.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A| |Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||160.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||80.0<br>40.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=134°C|_P_tot||500.0<br>136.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.30|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.50|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 3 V�2.2 2017-06-09 Datasheet IKY40N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.50|2.35<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.85|2.30<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.1|5.8|6.5|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3000|250<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|14.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2385|-|pF| |Output capacitance|_C_oes||-|235|-|| |Reverse transfer capacitance|_C_res||-|132|-|| |Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|190.0|-|nC| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns| |Rise time|_t_r||-|29|-|ns| |Turn-off delaytime|_t_d(off)||-|280|-|ns| |Fall time|_t_f||-|26|-|ns| |Turn-on energy|_E_on||-|2.18|-|mJ| |Turn-off energy|_E_off||-|1.30|-|mJ| |Total switchingenergy|_E_ts||-|3.48|-|mJ| V�2.2 2017-06-09 Datasheet 4 IKY40N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=600A/µs|-|350|-|ns| |Diode reverse recoverycharge|_Q_rr||-|3.00|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-188|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|29|-|ns| |Rise time|_t_r||-|32|-|ns| |Turn-off delaytime|_t_d(off)||-|375|-|ns| |Fall time|_t_f||-|64|-|ns| |Turn-on energy|_E_on||-|3.10|-|mJ| |Turn-off energy|_E_off||-|2.50|-|mJ| |Total switchingenergy|_E_ts||-|5.60|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=600A/µs|-|550|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|7.50|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|30.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-142|-|A/µs| V�2.2 2017-06-09 Datasheet 5 IKY40N120CH3 **==> picture [474 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 550<br>100 t ecoA TINT | 500 Lt<br>450<br>a 4 not for linear use eee ee \<br>a 400<br>=< ee PN | fo of |<br>= | Vim Tm L ui|| =<br>350<br>10<br>imaa AI Tm) OQ¢¢ FINXI Ee<br>a oea 300 Poof KF\ ft]<br>aO rfaot ot tT ett ett tT tT Ti i)<br>O aot 250 Nee<br>BF a ee q<br>200<br>of | | 1 TE) Pf} | (KE<br>150<br>eT<br>100<br>a a ee ew<br>50<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V)=15V) temperature<br>( T vj ≤ 175°C)<br>80 160<br>VGE=20V<br>17V<br>70 SNe 140<br>15V<br>60 \ 120 13V<br>_ P| NL \N/<br>x _x A WA<br>11V<br>NNN ee<br>50 100 9V<br>7V<br>BN LN<br>40 80<br>Y Y 5V \ We<br>i 30 60 Ga<br>ee ey, oe<br>2<br>20 40<br>PAY AX<br>10 20<br>\ Ji\<br>0 0 |<br>25 50 75 100 125 150 175 0 1 2 3 4 5 6<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [250 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>a 4 not for linear use eee ee<br>a<br>=< ee<br>= | Vim Tm L ui|| =<br>10<br>imaa AI Tm) OQ¢¢<br>a aoea<br>aO rfaot tT ett ett tT tT Ti i)<br>BF a ee q<br>of | | 1 TE)<br>eT<br>a a ee<br>0.1<br>1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area<br>( D =0, T C =25°C, T vj 175°C; V GE=15V)=15V)<br>I C P tot<br>**----- End of picture text -----**<br> Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) Figure 4. Typical ( _T_ vj=25°C) 6 Datasheet 2017-06-09 IKY40N120CH3 **==> picture [471 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 160 160 LY<br>VGE=20V Tvj = 25°C<br>Tvj = 175°C<br>17V<br>140 140<br>15V<br>120 13V 120<br>< SKULL LEE V/A<br>11V<br>: QWswy, < Ee/<br>100 9V 100<br>7V<br>BENS AL<br>O 80 NAN XK O 80<br>5V N\ AL a /<br>60 60<br>Ef ONKM SE pF<br>40 40<br>20 20<br>Z N TA<br>0 0<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14 16 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>5.0 1000<br>eT<br>IC = 20A es<br>a a a es<br>IC = 40A<br>4.5 IC = 80A<br>_ = 7 a a a a ee ee ee<br>td(off)<br>ee 4.0 ee tf<br>E we ttd(on)r<br>: ee = fe<br>foe Te E S<br>3.5 100<br>= -7 = — a<br>o - Lu a a a ee<br>tut 3.0 vot F= a ai eee ee e e eeeeee<br>2.5<br>ai SS ee ee ee el<br>Feee—--T = eee<br>2.0 10<br>tl| ~ O00<br>Q<br>° 1.5 pf | | aaSCee ee<br>1.0<br>0.5 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. **==> picture [88 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =175°C, V CE=600V,<br>**----- End of picture text -----**<br> _V_ GE =0/15V, _R_ G=12 Ω Figure E) Datasheet 7 2017-06-09 IKY40N120CH3 **==> picture [474 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> td(off) td(off)<br>1000 tf 1000 tf<br>1 a— || ttd(on)r (eeee—————eee t —— | ttd(on)r aa ee—_—eeee<br>SS ee<br>a ee a SS ae a<br>a ee eee a eeeee<br>ee ee eee p o<br>~5 ~t]tt | | |}5 Et | | | |<br>Wwre 100 aeeSS eeuw 100 eeea es<br>= a [_—<br>= a re ee ee ee es et = a ee<br>5 a a a ee a ae a a De<br>>= a a eeee re rs ee ee eee e ee<br>Sofie a ee ee ee a el en en ee e e<br>a | | | | | |} &@ fF | |<br>n<br>n eG<br>10 10<br>aa aa<br>po poa a<br>a a ee ee ee eese<br>a a a ee ee<br>1 1<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br> ## Figure 9. Typical **resistor** (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _I_ C =40A, Dynamic test Figure E) Figure 10. (inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =40A, _R_ G=12 , Dynamic test circuit Figure E) **==> picture [471 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 8 22.5<br>typ. Eoff<br>min. Eon<br>max. 20.0 Ets<br>7<br>Ww /I<br>a we = 17.5 7<br>a ~ = /<br>fe) 6 ~>~ a) /<br>> ys. D PEt Ld /<br>9 ~~ oA n 15.0 /<br>Oo _ ~~~ ~ 9 / /<br>= 5 a ~ sa > ‘| /<br>WwWag ee ~ _~ A‘ O)w 12.5 /7 /<br>I= ~. . m7 /<br>feimo 4 —rm —~S > ~“ aiWwoO 10.0 / =a<br>uw=ul 3 ™ EFO= 7.5 oa“o /<br>< D “C 4<br>oO - 5.0 v7<br>2<br>| eee<br>2.5<br>a2 eeea<br>1 0.0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. of ( _I_ C=1mA) Figure 12. (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G=12 Ω , Dynamic test Figure E) 8 Datasheet 2017-06-09 IKY40N120CH3 **==> picture [474 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 10 6<br>Eoff Eoff<br>9 Eon Eon<br>Ets Ets<br>5<br>8<br>Wwef] 7 f]) s [orp Wwé pf | | 2<br>7) “ 7) 4 z<br>o o Pa<br>et er Le<br>aa] 6 < aa] ea<br>% 4 “) 3 7<br>5 3<br>: 4 a 2 —}eZz bema | |<br>4<br>=a:Za = 2 eaao<br>3<br>=® a— a<br>Zoo 8<br>2<br>1<br>1 2 eee<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses asa Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=12 , Dynamic test circuit in<br>Figure E) Figure E)<br>10 16 Lt<br>Eoff V CC<br>9 Eon ——- V CC = =960V240V / //<br>Ets 14 ae | J |<br>8 7<br>Zz ee<br>12<br>7<br>oo <x<br>10<br>6<br>5 8<br>(U) 4 Pa y = =<br>Zz oo a Ww 6<br>L a kK<br>3<br>4<br>ee eeeee<br>2<br>2<br>1<br>0 0<br>400 450 500 550 600 650 700 750 800 0 30 60 90 120 150 180 210<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=40A) **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =175°C, V GE=0/15V,<br>**----- End of picture text -----**<br> **==> picture [60 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> I C =40A, R G=12<br>Figure E)<br>**----- End of picture text -----**<br> 9 Datasheet 2017-06-09 IKY40N120CH3 **==> picture [471 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 1E+4 300<br>H Cies e e ee ee<br>I Coes a ee ee ee = 270<br>Cres<br>I aeo /<br>a 240 /<br>t op 210 CE<br>L 1000 eee:a w<br>WwFE SSSSSSsa a 180 i lll Yi4<br>oO7. PRON————— Oo eee<br>150<br>e Ww ee eee 9 J<br>PSS bry<br>120<br>100<br>a ee eee V4<br>po ke 90<br>a ee se O<br>ee eee ee<br>a a 60 L<br>Seee fs 30<br>10 0<br>0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 600V, T vj 175°C)<br>45<br>D = 0.5<br>0.2<br>40 |Py EE. EE LLY ROTC wer a<br>0.1 . A<br>s SSC \ Mera THTI<br>Z = 0.1 LCA 0.05<br>35<br>0.02<br>S= 9 CNNTTer a<br>ke <t 0.01 NUTINI<br>fal 30 CAAT TTT TT<br>single pulse<br>Z o Pa NAT<br>2 25 PRT TTT Ey fy | a PNM HSAT TIT TMT<br>=r | \ aoie 0.01 anVN 0000<br>< CONNIE I A<br>5 20 \ I NFa ||<br>O<: 15 N F22 0.001 PETPETIT WATT TIETTT M LTTETT ETTTETTT<br>(7p) 10 a i a Lt<br>2; NN <- eTSeea G Hat }<br>5 a — PATTIE TICooroTIE ETT TE<br>i: 1 2 3 4 5<br>ri[K/W]: 0.016055 0.117494 0.15756 3.3E-3 3.4E-4<br>τ i[s]: 4.1E-4 2.8E-3 0.018313 0.491884 12.38553<br>OT fd Al |<br>0 1E-4<br>10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal resistance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 600V, start at T vj ≤ 175°C)<br>C<br>I C(SC)<br>t SC c)th(j-<br>Z<br>**----- End of picture text -----**<br> 10 Datasheet 2017-06-09 IKY40N120CH3 **==> picture [235 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 800 LE<br>Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A<br>700<br>a<br>600<br>—<br>WwSS N \<br>TE<br>500<br>Lu>> S ~<br>O 400 . ~“<br>LU=O=O NX nm / ~“N<br>oa ~N<br>Ww N<br>3 ~<br>or 300 a<br>3<br>200<br>100<br>0<br>400 600 800 1000 1200 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br> **==> picture [357 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> | LE<br>a D = 0.50.2 eelnn, aTTT eer a ala TT<br>700<br>= ASOT 0.1 Ill a<br>0.05<br>0.1<br>S200 0.02 0 600<br>< 0.01 NUTONE TAA nt —<br>oO pAHEE ATT EP WwSS N \<br>= single pulse A ATT TT TTT TE<br>500<br>Mma ci Ss if ANT OT OT Lu>><br>2 LINDO<br>0.01<br>z NNO oe ee ooUM) O 400<br>Ww ENS| eA Ee| | et th LU=O=O NX<br>= erm SOACn oa<br>be PTT YETTTT Ww<br>1 NT 3<br>2 ma ani On) geo or 300<br>2 AML | 3<br>0.001 200<br>a A] cr, ConteiRe Il<br>A ee eel<br>100<br>a i: 1 ee 2 3 4 5<br>ri[K/W]: 0.02668 0.22581 0.24167 5.3E-3 3.9E-4<br>τ i[s]: 3.3E-4 2.7E-3 0.01549 0.40258 11.77304<br>1E-4 0<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 400 600<br>t p , PULSE WIDTH [s] di F /dt , DIODE<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 21. Figure 22. ( _D_ = _t_ p/T) **==> picture [43 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V R=600V)<br>**----- End of picture text -----**<br> **==> picture [477 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 9 70<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A Tvj = 175°C, IF = 40A<br>8<br>—<br>60<br>7<br>2 = _<br>Lu _— — — za<br>50<br><x 6 or<br>x= 5 Z<br>O oO ya<br>40<br>fe 5 > ]<br>Ww inWw Z 7<br>is) 4 ef | | © ea<br>a w 30 =<br>L<br>3 ——| ag<br>20<br>2<br>10<br>1 Pf fo ft<br>0 0<br>400 600 800 1000 1200 1400 400 600 800 1000 1200 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br> Figure 23. ( _V_ R=600V) Figure 24. ( _V_ R=600V) 11 Datasheet 2017-06-09 IKY40N120CH3 **==> picture [472 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 0 160<br>es Tvj = 25°C, IF = 40A es LY Tvj = 25°C /<br>Tvj = 175°C, IF = 40A Tvj = 175°C<br>-125 ~ | 140 a<br>-250 Pe 120 /<br>= aN ~ L E:<br>% \W EN 5 /)<br>=£ -375 \ Luoc 100 7<br>) \ \ s)<br>© -500 80<br>©oO <x<br>8 L =<br>o -625 a 60<br>ne} .<br>° /<br>-750 40<br>ee eee Ae<br>-875 20<br>-1000 0 =<br>400 600 800 1000 1200 1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 25. Figure 26. ( _V_ R=600V) **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.00<br>IF = 20A<br>2.75 IF = 40A<br>IF = 80A<br>2.50<br>2.25<br>| | | | [| i<br>Ww<br>SP<br>ke 2.00<br>I<br>a<br>><br>Q 1.75<br>aa<br>Se 1.50<br>1.25<br>Se<br>1.00<br>0.75<br>0.50<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 27. 12 Datasheet 2017-06-09 IKY40N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **PG-TO247-4-2** **==> picture [415 x 299] intentionally omitted <==** **----- Start of picture text -----**<br> M<br>A<br>E<br>A2 E2<br>R<br>b2<br>b4<br>E3 b6 H<br>2x<br>E1<br>1 2 3 4<br>b 4 3 2 1<br>e1 A1<br>e<br>b7<br>c<br>D3<br>D1 D D2<br>D4<br>N<br>L1<br>L<br>**----- End of picture text -----**<br> **==> picture [84 x 32] intentionally omitted <==** PACKAGE SURFACE ROUTE BETWEEN PIN 1 & PIN 2 WILL BE 5.1mm MIN. **==> picture [185 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A 4.9 5.1<br>A1 2.31 2.51<br>A2 1.9 2.1<br>b 1.16 1.29<br>b2 1.36 1.49<br>b4 2.16 2.29<br>b6 1.16 1.45<br>b7 1.16 1.65<br>c 0.59 0.66<br>D 20.9 21.1<br>D1 22.3 22.5<br>D2 15.95 16.55<br>D3 1 1.35<br>D4 1.6 1.8<br>E 15.7 15.9<br>E1 3.9 4.1<br>E2 13.1 13.5<br>E3 2.58 2.78<br>e 2.54<br>e1 5.08<br>H 0.8 1<br>L 19.8 20.1<br>L1 2.55 2.85<br>M 0.97 1.57<br>N 3.24 3.44<br>R 1.9 2.1<br>**----- End of picture text -----**<br> ALL b... AND c DIMENSIONS INCLUDING PLATING EXCEPT AREA OF CUTTING **==> picture [98 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NO.<br>Z8B00182798<br>REVISION<br>01<br>SCALE 2:1<br>0 5 10mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>23.09.2016<br>**----- End of picture text -----**<br> 13 V�2.2 2017-06-09 Datasheet IKY40N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.2 2017-06-09 Datasheet IKY40N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Revision�History** IKY40N120CH3 ## **Revision:�2017-06-09,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2017-04-26|Final data sheet| |2.2|2017-06-09|Update Figure 26| 15 V�2.2 2017-06-09 Datasheet ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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