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IKWH50N75EH7XKSA1
IGBT, 80 A, 1.45 V, 250 W, 750 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT 7 Series
- Power Dissipation: 250W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Saturation Voltage: 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.82 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** ## **Final datasheet** **High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology co-packed with soft and fast recovery Emitter Controlled 7 diode** ## **Features** - VCE = 750 V - IC = 50 A - Low switching losses - Very low collector-emitter saturation voltage VCEsat - Very soft, fast recovery antiparallel diode - Smooth switching behavior - Humidity robustness - Optimized for hard switching, two- and three-level topologies - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ ## **Potential applications** - Industrial UPS - EV Charging - String inverter - Energy storage systems (ESS) ## **Product validation** - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 ## **Description** Package pin definition: - Pin G – Gate - Pin C & backside – Collector - Pin E – Emitter **==> picture [68 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> |—|G<br>E|| |---|---|---| |**Type**<br>—|**Package**|**Marking**| |IKWH50N75EH7<br>—|PG-TO247-3-U04|K50GEH7| Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2025-07-31 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| Datasheet Revision 1.00 2025-07-31 2 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in.) from case|_L_E|||13||nH| |Storage temperature|_T_stg||-55||150|°C| |Soldering temperature|_T_sold|wave soldering 1.6 mm (0.063 in.) from case<br>for 10 s|||260|°C| |Mounting torque|_M_|M3 screw, Maximum of mounting processes:<br>3|||0.6|Nm| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||40|K/W| |IGBT thermal resistance,<br>junction-case|_R_th(j-c)|||0.46|0.6|K/W| |Diode thermal resistance,<br>junction-case|_R_th(j-c)|||0.61|0.8|K/W| ## **2 IGBT** |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||750|V| |DC collector current,<br>limited by Tvjmax|_I_C|limited by bondwire|_T_c= 25 °C|80|A| ||||_T_c= 100 °C|67|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||200|A| |Turn-of safe operating<br>area||_V_CE≤ 750 V,_t_p≤ 1 µs,_T_vj≤|175 °C|200|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 10 µs,_D_< 0.01||±30|V| |Power dissipation|_P_tot||_T_c= 25 °C|250|W| ||||_T_c= 100 °C|125|| Datasheet Revision 1.00 2025-07-31 3 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 50 A,_V_GE= 15 V|_T_vj= 25 °C||1.45|1.75|V| ||||_T_vj= 175 °C||1.75||| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 0.44 mA, VCE= VGE||3.2|4|4.8|V| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 750 V,_V_GE= 0 V|_T_vj= 25 °C|||15|µA| ||||_T_vj= 175 °C||1500||| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 50 A,_V_CE= 20 V|||65||S| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||2560||pF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||79||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||9.6||pF| |Gate charge|_Q_G|_V_CC= 600 V,_I_C= 50 A,_V_GE=|15 V||105||nC| |Turn-on delay time|_t_d(on)|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 50 A||18||ns| ||||_T_vj= 175 °C,<br>_I_C= 50 A||18||| |Rise time (inductive load)|_t_r|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 50 A||18||ns| ||||_T_vj= 175 °C,<br>_I_C= 50 A||19||| |Turn-of delay time|_t_d(of)|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 50 A||141||ns| ||||_T_vj= 175 °C,<br>_I_C= 50 A||175||| |Fall time (inductive load)|_t_f|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 50 A||30||ns| ||||_T_vj= 175 °C,<br>_I_C= 50 A||72||| |Turn-on energy|_E_on|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 50 A||1.1||mJ| ||||_T_vj= 175 °C,<br>_I_C= 50 A||1.5||| **(table continues...)** Datasheet Revision 1.00 2025-07-31 4 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy|_E_of|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 50 A||0.6||mJ| ||||_T_vj= 175 °C,<br>_I_C= 50 A||1.2||| |Total switching energy|_E_ts|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 10 Ω,<br>_R_G(of)= 10 Ω|_T_vj= 25 °C,<br>_I_C= 50 A||1.7||mJ| ||||_T_vj= 175 °C,<br>_I_C= 50 A||2.7||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| ## **3 Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**||||| |---|---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Diode forward current,<br>limited by Tvjmax|_I_F|limited by bondwire|_T_c= 25 °C||80|A| ||||_T_c= 100 °C||57|| |Diode pulsed current, tp<br>limited by Tvjmax|_I_Fpulse||||200|A| |Power dissipation|_P_tot||_T_c= 25 °C||188|W| ||||_T_c= 100 °C||94|| **Table 5** ## **Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 50 A|_T_vj= 25 °C||1.65|2|V| ||||_T_vj= 175 °C||1.6||| |Diode reverse recovery<br>time|_t_rr|_V_R= 400 V,_R_G(on)= 10 Ω|_T_vj= 25 °C,<br>_I_F= 50 A||88||ns| ||||_T_vj= 175 °C,<br>_I_F= 50 A||151||| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 400 V,_R_G(on)= 10 Ω|_T_vj= 25 °C,<br>_I_F= 50 A||1.5||µC| ||||_T_vj= 175 °C,<br>_I_F= 50 A||3.4||| ## **(table continues...)** Datasheet Revision 1.00 2025-07-31 5 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode peak reverse<br>recovery current|_I_rrm|_V_R= 400 V,_R_G(on)= 10 Ω|_T_vj= 25 °C,<br>_I_F= 50 A||28.8||A| ||||_T_vj= 175 °C,<br>_I_F= 50 A||42.8||| |Diode peak rate of fall of<br>reverse recovery current|_di_rr_/dt_|_V_R= 400 V,_R_G(on)= 10 Ω|_T_vj= 25 °C,<br>_I_F= 50 A||-470||A/µs| ||||_T_vj= 175 °C,<br>_I_F= 50 A||-380||| |Reverse recovery energy|_E_rec|_V_R= 400 V,_R_G(on)= 10 Ω|_T_vj= 25 °C,<br>_I_F= 50 A||0.35||mJ| ||||_T_vj= 175 °C,<br>_I_F= 50 A||0.91||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _**Note** : For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ _Electrical Characteristic at T_ vj _= 25°C, unless otherwise specified._ _Dynamic test circuit, parasitic inductance L_ σ _= 8 nH, parasitic capacitor C_ σ _= 30 pF from Fig. E. Energy losses include “tail” and diode reverse recovery._ Datasheet Revision 1.00 2025-07-31 6 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **4 Characteristics diagrams** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Power dissipation as a function of case temperature** Ptot = f(Tc) T ≤ 175 °C vj **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>200<br>150<br>100<br>50<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **Typical output characteristic** IC = f(VCE) T = 25 °C vj **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5<br>**----- End of picture text -----**<br> **Collector current as a function of case temperature** IC = f(Tc) Tvj ≤ 175 °C, VGE ≥ 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **Typical output characteristic** IC = f(VCE) T = 175 °C vj **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-07-31 7 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical transfer characteristic** IC = f(VGE) VCE = 20 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br> ## **Gate-emitter threshold voltage as a function of junction temperature** VGEth = f(Tvj) IC = 0.44 mA **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> ## **Typical collector-emitter saturation voltage as a function of junction temperature** VCEsat = f(Tvj) VGE = 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>-50 -25 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current** t = f(IC) VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>12.5 25.0 37.5 50.0 62.5 75.0 87.5 100.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-07-31 8 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of gate resistor** t = f(RG) IC = 50 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V ## **Typical switching times as a function of junction temperature** t = f(Tvj) IC = 50 A, VCC = 400 V, VGE = 0/15 V, RG = 10 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>5 10 15 20 25 30 35 40 45 50 55 60<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of collector current** E = f(IC) VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>5<br>4<br>3<br>2<br>1<br>0<br>12.5 25.0 37.5 50.0 62.5 75.0 87.5 100.0<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of gate resistor** E = f(RG) IC = 50 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>5 10 15 20 25 30 35 40 45 50 55 60<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-07-31 9 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **==> picture [229 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> Typical switching energy losses as a function of<br>junction temperature<br>**----- End of picture text -----**<br> E = f(Tvj) **Typical switching energy losses as a function of collector emitter voltage** E = f(VCE) **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> IC = 50 A, VCC = 400 V, VGE = 0/15 V, RG = 10 Ω IC = 50 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω<br>3.0 4.0<br>3.5<br>2.5<br>3.0<br>2.0<br>2.5<br>1.5 2.0<br>1.5<br>1.0<br>1.0<br>0.5<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500 550<br>Typical gate charge Typical capacitance as a function of collector-emitter<br>VGE = f(QG) voltage<br>IC = 50 A C = f(VCE)<br>f = 100 kHz, VGE = 0 V<br>15 10000<br>12<br>1000<br>9<br>100<br>6<br>10<br>3<br>0 1<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-07-31 10 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **IGBT transient thermal impedance as a function of pulse width** ## **Diode transient thermal impedance as a function of pulse width** **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p)) Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p))<br>D = tp/Tp/T/T D = tp/Tp/T/T<br>1 1<br>0.1<br>0.1<br>0.01<br>0.01<br>0.001<br>0.0001 0.001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>Typical diode forward current as a function of forward Typical diode forward voltage as a function of<br>voltage junction temperature<br>IF = f(VF)F = f(VF) = f(VF)F)) VF = f(Tvj)F = f(Tvj) = f(Tvj)vj))<br>200 3.0<br>180<br>160 2.5<br>140<br>120 2.0<br>100<br>80 1.5<br>60<br>40 1.0<br>20<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p)) Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p))<br>D = tp/Tp/T/T D = tp/Tp/T/T<br>1 1<br>0.1<br>0.1<br>0.01<br>0.01<br>0.001<br>0.0001 0.001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>Typical diode forward current as a function of forward Typical diode forward voltage as a function of<br>voltage junction temperature<br>IF = f(VF)F = f(VF) = f(VF)F)) VF = f(Tvj)F = f(Tvj) = f(Tvj)vj))<br>200 3.0<br>180<br>160 2.5<br>140<br>120 2.0<br>100<br>80 1.5<br>60<br>40 1.0<br>20<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-07-31 11 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **==> picture [250 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> Typical reverse recovery time as a function of diode<br>current slope<br>**----- End of picture text -----**<br> trr = f(diF/dt) VR = 400 V, IF = 50 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>800 1000 1200 1400 1600 1800<br>**----- End of picture text -----**<br> ## **Typical reverse recovery current as a function of diode current slope** Irrm = f(diF/dt) VR = 400 V, IF = 50 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>40<br>30<br>20<br>10<br>0<br>800 1000 1200 1400 1600 1800<br>**----- End of picture text -----**<br> **==> picture [261 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> Typical reverse recovery charge as a function of diode<br>current slope<br>**----- End of picture text -----**<br> Qrr = f(diF/dt) VR = 400 V, IF = 50 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>800 1000 1200 1400 1600 1800<br>**----- End of picture text -----**<br> **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** dirr/dt = f(diF/dt) VR = 400 V, IF = 50 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>-100<br>-200<br>-300<br>-400<br>-500<br>-600<br>-700<br>800 1000 1200 1400 1600 1800<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-07-31 12 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical diode current slope as a function of gate resistor** diF/dt = f(RG) VR = 400 V, IF = 50 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>5 10 15 20 25 30 35 40 45 50 55 60<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-07-31 13 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** **5 Package outlines** ## **5 Package outlines** **==> picture [101 x 57] intentionally omitted <==** |PACKAGE - GRO<br>NUMBER:|**PG-TO247-3-U04**<br>UP|**PG-TO247-3-U04**<br>UP| |---|---|---| |**DIMENSION**|**S**<br>MIN.<br>MAX.<br>**MILLIMETERS**|| |||MAX.| |**A**|4.90|5.10| |**A1**|2.31|2.51| |**A2**|1.90|2.10| |**b**|1.16|1.26| |**b1**||1.90| |**b2**||2.30| |**b3**|1.55|1.65| |**b4**|1.96|2.06| |**c**|0.59|0.66| |**D**|20.90|21.10| |**D1**|16.25|16.85| |**D2**|1.05|1.35| |**D3**|0.55|0.65| |**E**|15.70|15.90| |**E1**|13.10|13.50| |**E2**|2.14|2.34| |**e**|5.44|| |**N**|3|| |**L**|19.80|20.10| |**L1**|3.95|4.30| ## **Figure 1** Datasheet Revision 1.00 2025-07-31 14 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** **6 Testing conditions** ## **6 Testing conditions** **==> picture [502 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V C C<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2025-07-31 15 **IKWH50N75EH7 High speed and low saturation voltage 750 V TRENCHSTOP[™] IGBT7 technology** **==> picture [105 x 47] intentionally omitted <==** **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2025-03-19|Preliminary datasheet| |1.00|2025-07-31|Final datasheet| Datasheet Revision 1.00 2025-07-31 16 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2025-07-31 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2025 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABK426-002** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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