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IKW75N65SS5XKSA1
IGBT, 650 V, 80 A, 395W, To-247, 1.35 Vsat
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5 S5 CoolSiC Gen VI
- Power Dissipation: 395W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.97 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## IKW75N65SS5
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TM<br>**----- End of picture text -----**<br>
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TRENCHSTOP [TM] 5 S5 IGBT co-packed with full-rated 6 th generation<br>CoolSiC [TM] Schottky barrier diode<br>Features and Benefits: C<br>¢ Ultra-low switching losses due to the combination of<br>TRENCHSTOP 5 and CoolSiC technology<br>* Very low on-state losses<br>¢ Benchmark efficiency in hard switching topologies<br>G<br>¢ Plug-and-play replacement of pure silicon devices<br>E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice models:<br>http://www.infineon.com/igbt/ —<br>Potential Applications: "i><br>¢ Industrial Power Supplies yr id<br>- Industrial SMPS<br>- Industrial UPS<br>* Energy Generation<br>- Solar String Inverter<br>* Energy Distribution 1<br>- Energy Storage 2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW75N65SS5|650V|75A|1.35V|175°C|K75ESS5|PG-TO247-3|
Datasheet www.infineon.com
2020-07-27
IKW75N65SS5
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## Hybrid�CoolSiC[TM] �IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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## Hybrid�CoolSiC[TM] �IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>80.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||300.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||80.0<br>57.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||225.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||395.0<br>197.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.68|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature"
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## Hybrid�CoolSiC[TM] �IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.55<br>1.65|1.70<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=60.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.55<br>1.65|1.50<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3000|1900<br>-|µA|
|Zero gate voltage collector current|_I_CES|_V_CE=480V,_V_GE=0V<br>_T_vj=25°C|-|-|50|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|100.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=250kHz|-|4000|-|pF|
|Output capacitance|_C_oes||-|785|-||
|Reverse transfer capacitance|_C_res||-|15|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=75.0A,<br>_V_GE=15V|-|164.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.6Ω,_R_G(off)=5.6Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|0.45|-|mJ|
|Turn-off energy|_E_off||-|0.75|-|mJ|
|Total switchingenergy|_E_ts||-|1.20|-|mJ|
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## Hybrid�CoolSiC[TM] �IGBT
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.6Ω,_R_G(off)=5.6Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|155|-|ns|
|Fall time|_t_f||-|26|-|ns|
|Turn-on energy|_E_on||-|0.20|-|mJ|
|Turn-off energy|_E_off||-|0.42|-|mJ|
|Total switchingenergy|_E_ts||-|0.62|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.6Ω,_R_G(off)=5.6Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|168|-|ns|
|Fall time|_t_f||-|24|-|ns|
|Turn-on energy|_E_on||-|0.57|-|mJ|
|Turn-off energy|_E_off||-|1.24|-|mJ|
|Total switchingenergy|_E_ts||-|1.81|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.6Ω,_R_G(off)=5.6Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|195|-|ns|
|Fall time|_t_f||-|33|-|ns|
|Turn-on energy|_E_on||-|0.25|-|mJ|
|Turn-off energy|_E_off||-|0.75|-|mJ|
|Total switchingenergy|_E_ts||-|1.00|-|mJ|
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IKW75N65SS5
## TM Hybrid CoolSiC IGBT
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400 90<br>350 Ne 80<br>70<br>300 PX) FE A<br>60<br>pt Ng A<br>250<br>50<br>PE Nye pA<br>200<br>40<br>»EOUXRTE EEE AG<br>150<br>30<br>100<br>20<br>Ne eee<br>50 PN eee<br>10<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>POP PN ) Eee<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>300 300<br>270 I | 270 La<br>240 240<br>VGE=20V VGE=20V<br>eA| |<br>18V 18V<br>210 210<br>15V 15V<br>| ee 180 4: 180 |Sey<br>(eA 12V 12V py<br>150 10V 150 10V<br>8V 8V<br>e 120 es| aan 120 eeee<br>7V y 7V a<br>: 90 6V 90 6V pape<br>5V 5V<br>pes i 7280<br>60 60<br>a 4a ey 7Ae<br>30 an) Seen) 30 AW<br>PAO LL<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
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TM
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300 Lt 2.50<br>270 TTjj=25°C=150°C / IICC=37,5A=75A<br>Ed s/f) 2.25 EL IC=150A<br>240 z<br>Oo<br>_x= 210 p f bsEe 2.00 Sf ] -" ey<br>5 [4 > ai<br>1.75<br>i / / < =<br>180<br>4 7A)<br>.eeE |<br>a 150 _ 1.50 L<br>ee<br>120<br>a © 1.25<br>oe oe<br>90<br>1.00<br>: =e ee<br>i eee:<br>60<br>0.75<br>30<br>0 0.50<br>> Ae eeeee<br>2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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1000 a SS SS SS 1000 a a<br>|I1 ttd(off)f aaeS ee ee ee ee |i| ttd(off)f aarr et eeee ee eee eee<br>td(on) td(on)<br>tr tr<br>FE fs = pe<br>| f p | | CT | S SE<br>S e e eee a ae eee<br>z= 100 [errra SSaotSS z= 100 L a t<br>ip) a ee es ee es es ee ip) a re<br>uw | a a hl<br>=- Se = a eeesee<br>Q SePNee ee e ae eeaeeee ee e<br>tE |) [SRS] EET TT | FoE | stieesooT<br>= =<br>2)- 10 aa adese es 2)- 10 aa<br>po a es<br>Se 2 a<br>ae ee ee a eeee<br>a ee ee a ee<br>PF | | | | rt dT | es ee ee ee ee<br>1 1<br>0 25 50 75 100 125 150 175 200 225 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=5.6 Ω , Dynamic test circuit in V GE =15/0V, I C =75A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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TM
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1000 aa 5.5<br>1 H td(off) a aa a I— typ. |<br>I tf a ee ee ee eee _<br>td(on) 5.0<br>I a eeee<br>tr<br><x<br>4.5<br>ip)zs= 100 fa a | es .|. | §&i 4.0 ee<br>im poaa(e)<br>a<br>- ee 3.5 eee<br>-<br><= a Wy a<br>3.0<br>ee a ne ee ne —x_<br>=<br>3<br>2)7 10 a eS == 2.5 ™<br>po Ww<br>eeSS<br>a eee 2.0 | ft ff<br>eseo)<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =75A, _R_ G=5.6 , Dynamic test circuit Figure E)
Figure 10.
( _I_ C=0.75mA)
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8 5.0<br>Eoff Eoff<br>Eon 4.5 Eon<br>7 Ets Ets<br>= | / / = 7 “<br>/<br>4.0<br>orl o<br>& 6 / aol= wo7<br>n / n Y<br>Ww / Ww 3.5<br>o o ;<br>fe) 5 fe) a<br>a / a 3.0 7<br>>’<br>O? G} Ka<br>4 2.5<br>gL 4 i?<br>Zz 3 ¢ 7 J 9 2.0 > a<br>iV) Ae Le|a<br>O ? O<br>1.5<br>FE= 2 7, ]/ Uc 7 Ee= ee Tasr<br>, 7 1.0<br>eee" 1 asapeZ| a 7<br>- 0.5<br>Ze EE<br>0 0.0<br>0 25 50 75 100 125 150 175 200 225 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=5.6 Ω , Dynamic test circuit in V GE =15/0V, I C =75A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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2.50 2.50<br>Eoff Eoff<br>2.25 Eon 2.25 Eon<br>Ets Ets<br>Ea n = ie<br>ee) 2.00 cog ys 2.00 7<br>ip) -* ip) o<br>Lu 1.75 = Lu 1.75<br>io) io) o*<br>fe) Do fe) ”<br>—! 1.50 - —! 1.50<br>>-<br>x 1.25 1.25<br>Pac 7 — rdx 7 ae —— a<br>— o |e —<br>2 1.00 — 2 1.00 a<br>el ee<br>0.75 0.75<br>op) op) eo —_<br>0.50 0.50<br>_ —_<br>0.25 0.25<br>0.00 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C = 7 5A,5A R G=5.6 , DyDynamicic tete s tt circuitcircuit iin I C = 7 5A,5A R G=5.6 , DyDynamicic tete s tt circuitcircuit iin<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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0.1 —————————————— eee<br>Tvj=175°C<br>=x po———————————— Tvj=150°C NT<br>B 0.01 ee Ce ee<br>im foo Tvj=100°C NKU<br>fr Se Ce<br>SSS Tvj=25°C<br>0.001<br>oO ee ee ee [eee]<br>C Ses; A<br>1E-4<br>3 {iu_A\\ |__|<br>Q ——— ee aoe<br>uw a ee ee a<br>e¢ 1E-5 {oupo NNi|\ \| ~7a Offi}<br>O a ee ee ee ee” Ae ee<br>> po NY<br>W 1E-6 ee Ane<br><x SSS ee —E—=E=—L—EEEE—EEE—e<br>i) po<br>i 1E-7 a a eee<br>————————————<br>(a<br>a ee<br>1E-8 ee ee<br>100 200 300 400 500 600 700<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I CES<br>**----- End of picture text -----**<br>
Figure 15.
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16 |<br>130V<br>520V<br>=<br>14<br>r /,<br>)<br>12<br>EO)<br>on fi<br>s 10 /.<br>ME<br>8 /|<br>E<br>5s<br>bu 6<br>x /<br>. 4 |<br>2<br>0<br>0 20 40 60 80 100 120 140 160 180<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 16. Typical ( _I_ C=75A)
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## IKW75N65SS5
TM
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1E+4<br>== ' Cies a keh ee<br>Coes<br>i — Cres SS. FI oil| ||<br>eeor ||| LAA<br>0.1<br>a ee ee iin a0) D=0.5<br>1000 po ut SS ti<br>e e 2 el 0.2<br>0.1<br>im 4 a a a ee es o TaeA ar aaCCT, CECITI<br>0.05<br>Bf 8 Ea A TTT<br>0.02<br>g -——+-—++—— 8 Ue<br>0.01<br>0.01<br>< 100 = SS i tiie Ht<br>single pulse<br>5 rT a | rl<br>O SSSSSS FH tttitE<br>i i) a FLAME<br>EE 0.001 UL<br>10<br>——Ee| omeal) bail ietatilimatil od ~~ fi<br>aOTa coe ooo GHG i<br>a a ST<br>es a | =a Sooo<br>ee es Pfa Pe i: aCc 1 aCee 2 3 4 5 6<br>ri[K/W]: 0.036771 0.03469 0.033681 0.087894 0.085504 0.10146<br>τ i[s]: 5.2E-5 3.7E-4 3.7E-4 3.3E-3 0.021173 0.107752<br>1 1E-4<br>0 5 10 15 20 25 30 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
( _V_ GE
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1<br>el<br>a<br>_ Dc<br>= ee<br>SCIm Dwa D=0.5<br>O Be) AB<br>xt Be ast y 0.2<br>2B== 0.1 PYCOMICPALI FU rEll 0.1 iil<br>(ep) et A ee |<br>Ww | | 0.05 |<br>1v ETeetAaeTri omy<br>4 ee eee ell 0.02 A<br>0.01<br><x es a een<br>uw AAWs PA single pulse<br>0.01<br>n oer tt<br>Zz Se a | Ry Ro 1]<br>s a I<br>FE° |)A| | 1 1 -- [il]ill<br>a a eae<br>| i: 1 2 3 4<br>ri[K/W]: 0.075765 0.234797 0.224839 0.144599<br>τ i[s]: 2.1E-4 1.6E-3 0.010463 0.061266<br>Ot |<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
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350<br>300<br>_<br>250<br><<br>b<br>Lu<br>mw<br>aa 200<br>aa<br>150<br>Ww<br>=<br>[a) 100<br>-<br>50<br>0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>I Fpuls<br>**----- End of picture text -----**<br>
Figure 20.
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TM
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225 3.5<br>Tj=25°C IF=30A<br>200 E=- — Tj=150°C // IIFF=60A=120A<br>3.0<br>/<br>/<br>175<br>2.5<br>150 Y am a<br>io / <<br>: / Fi 2.0<br>=) 125 e)<br>oO / ><br>100<br>1.5<br>< a, $ =<br>= / =<br>lo)rm 75 / / LLe) 1.0 Ts<br>50<br>0.5<br>25<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
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IKW75N65SS5
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## Hybrid�CoolSiC[TM] �IGBT
## **Package Drawing PG-TO247-3**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>
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## Hybrid�CoolSiC[TM] �IGBT
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## Hybrid�CoolSiC[TM] �IGBT
## **Revision�History**
IKW75N65SS5
## **Revision:�2020-07-27,�Rev.�2.1**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2020-03-20|PreliminaryData Sheet|
|2.1|2020-07-27|Final Data Sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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