Image not available
Illustrative purposes only
IKW75N65ET7XKSA1
IGBT, 80 A, 1.35 V, 333 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 333W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 2.97 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKW75N65ET7 ## TRENCHSTOP[TM] **==> picture [469 x 255] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>TRENCHSTOP [TM] IGBT 7 technology offering<br>« Very low V CEsat<br>¢ Low turn-off losses<br>¢ Short tail current<br>G<br>¢ Reduced EMI<br>E<br>* Humidity robust design<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant 2<br>*« Complete product spectrum and PSpice Models: tei,<br>http://www.infineon.com/igbt7/<br>Applications:<br>y<br>* Drives<br>-Servo<br>-GPD<br>¢ Industrial Power Supplies G<br>-Industrial UPS C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKW75N65ET7|650V|75A|1.35V|175°C|K75EET7|PG-TO247-3| V2. 2 2020- 11 -1 1 Datasheet www.infineon.com IKW75N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 2 V�2. 2 2020- 11 -1 1 Datasheet IKW75N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>78.5|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||225.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs2)|-||225.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||80.0<br>74.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||225.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤330V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=100°C|_t_SC||5|µs| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||333.0<br>167.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.45|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.60|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Defined by design. Not subject to production test. > 2) Clamped inductive load current test for each device, IC=225A, VCC=400V, Tc=25°C, VGE=20V, L=80µH, RG=10 Ω . 3 V�2. 2 2020- 11 -1 1 Datasheet IKW75N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.65<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.60<br>1.55|2.00<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|4.3|5.0|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1200|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|40.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|4460|-|pF| |Output capacitance|_C_oes||-|135|-|| |Reverse transfer capacitance|_C_res||-|46|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=75.0A,<br>_V_GE=15V|-|435.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤3µs<br>_T_vj=150°C|-|350|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.7Ω,_R_G(off)=4.7Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|28|-|ns| |Rise time|_t_r||-|25|-|ns| |Turn-off delaytime|_t_d(off)||-|310|-|ns| |Fall time|_t_f||-|15|-|ns| |Turn-on energy|_E_on||-|2.17|-|mJ| |Turn-off energy|_E_off||-|1.23|-|mJ| |Total switchingenergy|_E_ts||-|3.40|-|mJ| V�2. 2 2020- 11 - 11 Datasheet 4 IKW75N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.7Ω,_R_G(off)=4.7Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|26|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|13|-|ns| |Turn-off delaytime|_t_d(off)||-|330|-|ns| |Fall time|_t_f||-|11|-|ns| |Turn-on energy|_E_on||-|0.79|-|mJ| |Turn-off energy|_E_off||-|0.56|-|mJ| |Total switchingenergy|_E_ts||-|1.35|-|mJ| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1650A/µs|-|100|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.50|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-480|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=37.5A,<br>_di_F_/dt_=2725A/µs|-|70|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.15|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|34.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-600|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.7Ω,_R_G(off)=4.7Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|31|-|ns| |Rise time|_t_r||-|30|-|ns| |Turn-off delaytime|_t_d(off)||-|365|-|ns| |Fall time|_t_f||-|25|-|ns| |Turn-on energy|_E_on||-|3.45|-|mJ| |Turn-off energy|_E_off||-|2.05|-|mJ| |Total switchingenergy|_E_ts||-|5.50|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.7Ω,_R_G(off)=4.7Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|28|-|ns| |Rise time|_t_r||-|18|-|ns| |Turn-off delaytime|_t_d(off)||-|415|-|ns| |Fall time|_t_f||-|20|-|ns| |Turn-on energy|_E_on||-|1.52|-|mJ| |Turn-off energy|_E_off||-|1.11|-|mJ| |Total switchingenergy|_E_ts||-|2.63|-|mJ| V�2. 2 2020- 11 -1 1 Datasheet 5 IKW75N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1650A/µs|-|155|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|4.40|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|41.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-590|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=37.5A,<br>_di_F_/dt_=2260A/µs|-|125|-|ns| |Diode reverse recoverycharge|_Q_rr||-|3.36|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|43.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs| 6 V�2. 2 2020- 11 -1 1 Datasheet IKW75N65ET7 ## ~~GBT~~ TRENCHSTOP[TM] **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 350 90<br>80<br>OO<br>300<br>70<br>250 PNT TT e]| | AL<br>60<br>PEN 200 \ ER 50 A<br>PLN 150 pf LN 40<br>Pf ye Ee 30<br>100 INfg Ee<br>20<br>ON 50 es Gee<br>10<br>Pf LN EEE<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C T C<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>225 225<br>VGE=20V VGE=20V<br>200 18V 200 18V<br>15V 15V<br>Ze — a7<br>175 175<br>12V = 7a 12V ay /<br>10V 10V<br>| 150 NZ 150<br>is | Ne<br>8V 8V<br>125 7V 125 7V<br>6V 6V<br>100 100<br>5V 5V<br>75 75<br>oe) ee<br>50 50<br>pw<br>25 ; \ SF 25<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> Datasheet 2 2020- 11 -1 1 7 IKW75N65ET7 ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 225 3.5<br>Tj=25°C / IC=37,5A<br>Tj=175°C / IC=75A<br>200 IC=150A<br>3.0<br>Zz<br>175<br>al<br>2.5<br>5 150 Fe<br>Ww <x<br>5 125 th 2.0<br>ee a<br>w E<br>100<br>1.5<br>uw ow<br>8 75<br>1.0<br>50<br>0.5<br>25<br>0 0.0<br>2 4 6 8 10 12 14 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 5. Typical ( _V_ CE=20V) Figure 6. Typical a function ( _V_ GE=15V) **==> picture [471 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 [oo 1E+4 lO ———————<_—<br>SC H td(off) ee<br>PN TT 1 tf eeee ee<br>td(on)<br>po | ns es<br>tr<br>ee I 2 ee eeeee<br>y= td(off) S o<br>tf 1000<br>=F2) 100 ' ttd(on)r [rt csn aa aee aeeeeee ee ee eeee<br>uw e ee<br>100<br>Q a ee Se ee ee ee eS<br>e Petoeetro| § Sea<br>= , = a ee ee ee ee ee<br>10<br>a<br>a<br>10<br>aP|eePPee|ee| ee| | ee| eeeTf -—}aaa sef++} e ee eeJ<br>1 1<br>t dt e y Ee<br>0 25 50 75 100 125 150 175 200 225 0 5 10 15 20 25 30 35 40<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=4.7 Ω , Dynamic test circuit in V GE =15/0V, I C =75A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br> Datasheet 8 V2. 2 2020- 11 -1 1 IKW75N65ET7 ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>td(off) typ.<br>1000 tf<br>1 | ttd(on)r a es Cc<br>| a po Ww 5<br>a ee ee<br>D see es ae<br>oO<br>~ [| | | | | | g<br>c ja) 4<br>Wwef 100 a es| | ] 8Tr<br>= [pe<br>= a Lu<br>5> aa C2ee ee = 3<br>= EE ee ee e e e e<br>Oo Pesspesspye e]<br>= kK<br>2<br>ap- 10 o ui<br>[_eeees MeTT<br>po Ee<br>ee oO~ 1<br>eeee ee<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =75A, _R_ G=4.7 , Dynamic test circuit Figure E) Figure 10. ( _I_ C=0.75mA) **==> picture [471 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 35 16<br>Eoff Eoff<br>Eon Eon<br>Ets 14 Ets<br>30<br>_ / _ Ve<br>= / = 12 5<br>7p) 25 7p)<br>uw 7 uw y<br>on / 1p) “<br>pa]e) 7n / pa]e) 10 7<br>20<br>x3 /fy7 a3 8 “ “ “ “7<br>uwO) 15 7 U WwO) aFon “ a”<br>= / 7 Zz 6 -? o<br>O 7 O<br>E } E -<br>10<br>= 4<br>?<br>5<br>ma 2<br>wr <— tr<br>0 0<br>i } LE<br>0 25 50 75 100 125 150 175 200 225 0 5 10 15 20 25 30 35 40<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=4.7 Ω , Dynamic test circuit in V GE =15/0V, I C =75A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 9 V2. 2 2020- 11 -1 1 IKW75N65ET7 ## TRENCHSTOP[TM] **==> picture [474 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 7 8<br>Eoff Eoff<br>Eon Eon<br>Ets 7 Ets<br>6<br>oy oy<br>& oa & 6 we<br>5<br>io) 7 - (ep) o<br>icp) on icp) o<br>5<br>aa] oo aa]<br>> 4 >= - > “ a<br>t Poet - t 4 | i _ 4<br>Ww _- Ww ” 7<br>oOZz: 3 _- — — oOZz: 3 Banreana 7 a<br>x= — _ x= ea 7<br>: -_<br>2<br>1 § Co<br>2<br>a<br>1<br>Se 1 eeey ff<br>0 0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =175°C, V GE=15/0V,<br>I C =75A, R G=4.7 , Dynamic test circuit in I C =75A, R G=4.7 , Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>130V Cies<br>520V 1E+4 E Coes LL.<br>14 7\ Cres a<br>i<br>a<br>Ss 12 a<br>im [7<br>F: 10 Li 2eho} | |<br>(oe) Lu 1000 a<br>oE 8 Po of <E aNe<br>E 2 ES eeee eeee ee<br>tiWwW 6 g a. me ee<br>5 TN 100 im _<br>~ ate -4<br>4 aa re ee<br>a ee ee ee ee<br>2 a a ee ee<br>0 10<br>0 100 200 300 400 500 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> Figure 15. Typical ( _I_ C=75A) Figure 16. **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V GE<br>**----- End of picture text -----**<br> 10 V 2. 2 2020- 11 -1 1 Datasheet ## IKW75N65ET7 ## TRENCHSTOP[TM] **==> picture [475 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 700<br>CT TT TC TT Te eeptrtitT<br>ME ETM TTT TTTNe oesralll |LTT<br>=2 600 : Bi as ;< Sau BNLA AVOUITIINNII<br>Zz: S — 0.1 a eeaee TIT0 a |<br>D=0.5<br>x2 500 Zz< eeerrs ae 0.2<br>oO TT 0.1<br>6 ad Ae 0.05 |<br>re: a see ATTVY<br>400 0.02<br>: Te ALI<br>0.01<br>5 = Ae 0.01<br>oOkK 300 wWu eeeSSN 2 an single pulse |<br>a) ) Ir mT A a CT<br>3: 200 }/ F62 DYCMITMAICCe pee eM C F C<br>0.001<br>oe $ Set eeieeeee i at ~_ |<br>o 100 y, - 0)i | |<br>Wa a a i: a 1 2 3 4<br>ri[K/W]: 0.02393595 0.09287284 0.1367893 0.1964019<br>τ i[s]: 4.3E-5 3.4E-4 5.4E-3 0.07593857<br>4a Ne (i |<br>0 1E-4<br>8 10 12 14 16 18 20 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical short circuit collector current as a Figure 18. IGBT transient thermal resistance<br>function of gate-emitter voltage ( D = t p/T)<br>( V CE =400V, T vj=150°C)<br>1 | 350 |<br>Tj=25°C, IF = 75Aj=25°C, IF = 75A=25°C, IF = 75AF = 75A = 75A<br>CC oo a Tj=175°C, IF = 75Aj=175°C, IF = 75A=175°C, IF = 75AF = 75A = 75A<br>ee= FCec | eeeeee ec | 300 |.. I<br>D=0.5<br>BO Ae te PS<br>0.2<br>250<br>2 | 0.1<br>Ww7) 0.1 Seam?EH (a 0.05 Ht eet > N\<br>7 et AF ari iTT a \<br>4 a ee | 0.02 | nT 200<br>2= APe 0.01single pulse eeWT TT lS88 s SL<br>150<br>t Lu<br>BET ACHHACHH J _—<br>0.01<br>A UTMLANI UM} 2 |) MR<br>2 C o Re iil 6 100 =<br>F | Cy=11/Ry Co=fe/Ro<br>& GHIETHHED THIET a“ Ho<br>500<br>Y AM en a eee<br>i: 1 2 3 4 5<br>ri[K/W]: 0.02895414 0.1253166 0.1696734 0.2187674 0.05728843<br>τ i[s]: 2.3E-5 1.6E-4 2.7E-3 0.03741775 0.1592806<br>0.001 CEI VATU | ETI EET T U 0 PT yy yy<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 700 900 1100 1300 1500 1700<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I C(SC) Z c)th(j-<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> **==> picture [235 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 350 |<br>Tj=25°C, IF = 75Aj=25°C, IF = 75A=25°C, IF = 75AF = 75A = 75A<br>a Tj=175°C, IF = 75Aj=175°C, IF = 75A=175°C, IF = 75AF = 75A = 75A<br>300 I<br>|..<br>PS<br>250<br>N\<br>><br>a \<br>nT 200<br>lS88 s SL<br>150<br>Lu<br>J _—<br>2 |) MR<br>6 100 =<br>500 PT yy yy<br>700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br> Figure 19. Diode function ( _D_ = _t_ p/T) Figure 20. ( _V_ R=400V) 11 V2. 2 Datasheet 2020- 11 -1 1 IKW75N65ET7 ## TRENCHSTOP[TM] **==> picture [489 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 50<br>Tj=25°C, IF = 75A Tj=25°C, IF = 75A<br>4.5 E Tj=175°C, I o] F = 75A 45 Tj=175°C, IF = 75A<br>|| EB<br>oe<br>6) 4.0 - x 40 =<br>QO 3.5 _-— -_ Zzm7 35 7 a<br>a =)<br>oO 3.0 oO 30 7<br>3 2.5 3 25 <<br>owee 2.0 ow 20 eeL —<br>uw Ww<br>“ 7)<br>a 1.5 ——_—— a 15<br>1.0 10<br>0.5 5<br>0.0 0<br>700 900 1100 1300 1500 1700 1900 700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 160<br>Tj=25°C, IF = 75A Tj=25°C<br>Tj=175°C, IF = 75A Tj=175°C<br>-100 = 140<br>-200 120<br>8 -300 . z 100<br>‘=(o} a<br>iS2© -400 \ , uw3a 80<br>5 &<br>a<br>o -500 a 60 J<br>2 uw /<br>xe} \ - /<br>: -600 P| ft AL\ : 40 PL TAL/]<br>-700 20<br>7<br>1]<br>Y<br>ee es<br>-800 0<br>700 900 1100 1300 1500 1700 1900 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 23. Figure 24. ( _V_ R=400V) 12 V 2. 2 2020- 11 -1 1 Datasheet IKW75N65ET7 ## TRENCHSTOP[TM] **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>IF=37,5A<br>IF=75A<br>IF=150A<br>3.0<br>2.5<br>Oo<br><x<br>a 2.0<br>oO<br>><br>Q<br>: 1.51.0 —<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 25. 13 V2. 2 2020- 11 -1 1 Datasheet IKW75N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Package Drawing PG-TO247-3** **==> picture [277 x 417] intentionally omitted <==** **==> picture [153 x 351] intentionally omitted <==** **==> picture [300 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br> 14 V�2. 2 2020- 11 -1 1 Datasheet IKW75N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 15 V�2. 2 2020- 11 -1 1 Datasheet IKW75N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Revision�History** ## IKW75N65ET7 ## **Revision:�2020- 11 -1 1 ,�Rev.�2. 2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |1.1|2020-04-20|Preliminary datasheet| |2.1|2020-05-12|Finaldata sheet| |2.2|2020-11-11|Additional short circuit specification| 16 V�2. 2 2020- 11 -1 1 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →