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IKW75N65EL5XKSA1
IGBT, 80 A, 1.1 V, 536 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.1V; Power Dissipation Pd:536W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 536W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.1V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.62 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
TM CE(sat) IGBT in TRENCHSTOP _ 5 technology copacked with RAPID 1
## IKW75N65EL5
CE(sat)
IKW75N65EL5
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CE(sat)<br>TM<br>Low V CE(sat) IGBT in TRENCHSTOP _ 5 technology copacked with RAPID 1<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>Low V CE(sat) L5 technology offering<br>* Very low collector-emitter saturation voltage V CEsat<br>¢ Best-in-Class tradeoff between conduction and switching losses<br>¢ 650V breakdown voltage<br>G<br>* Low gate charge Q G<br>E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>* Pb-free lead plating<br>* RoHS compliant eo<br>¢« Complete product spectrum and PSpice models: G yp<br>http://www.infineon.com/igbt/<br>Applications:<br>¢ Uninterruptible power supplies<br>G<br>¢ Solar photovoltaic inverters C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW75N65EL5|650V|75A|1.1V|175°C|K75EEL5|PG-TO247-3|
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IKW75N65EL5
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## Low�VCE(sat)�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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IKW75N65EL5
Low�VCE(sat)�series�fifth�generation
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax1)<br>_T_C=25°C<br>_T_C=100°C|_I_C||80.0<br>80.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax2)|_I_Cpuls||300.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs2)|-||300.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||90.0<br>89.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax2)|_I_Fpuls||300.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||536.0<br>268.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,3)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.28|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.46|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
1) Both values limited by bondwires.
2) Defined by design. Not subject to production test.
3) Package not recommended for surface mount applications.
Rev.�2.1,��2014-12-10
4
IKW75N65EL5
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## Low�VCE(sat)�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.10<br>1.11<br>1.12|1.35<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.40<br>1.42<br>1.40|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|4.2|5.0|5.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C<br>_T_vj=175°C|-<br>-|-<br>1000.0<br>5000.0|40.0<br>-<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|155.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|12100|-|pF|
|Output capacitance|_C_oes||-|150|-||
|Reverse transfer capacitance|_C_res||-|42|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=75.0A,<br>_V_GE=15V|-|436.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.0Ω,_R_G(off)=4.0Ω,<br>_L_σ=40nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|40|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|275|-|ns|
|Fall time|_t_f||-|50|-|ns|
|Turn-on energy|_E_on||-|1.61|-|mJ|
|Turn-off energy|_E_off||-|3.20|-|mJ|
|Total switchingenergy|_E_ts||-|4.81|-|mJ|
Rev.�2.1,��2014-12-10
5
IKW75N65EL5
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## Low�VCE(sat)�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1500A/µs|-|114|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.37|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|29.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2170|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.0Ω,_R_G(off)=4.0Ω,<br>_L_σ=40nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|39|-|ns|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|330|-|ns|
|Fall time|_t_f||-|144|-|ns|
|Turn-on energy|_E_on||-|2.12|-|mJ|
|Turn-off energy|_E_off||-|5.10|-|mJ|
|Total switchingenergy|_E_ts||-|7.22|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1500A/µs|-|95|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.43|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|40.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2900|-|A/µs|
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Rev.�2.1,��2014-12-10
IKW75N65EL5
CE(sat)
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100<br>PH<br>_xaa a DY<br>- ee<br>Z a<br>=)0e 10 aTTI eeTMA TMee<br>w —ee)<br>ee ee<br>a ||<br>O PP A<br>4S LT TTI TV<br>8 1 LAN<br>; aetVALI ETM<br>aeePT TT 7 TTTee eee ee<br>not for linear use<br>Prout COT<br>0.1<br>1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area<br>( D =0, T C =25°C, T vj 175°C, V GE = =15V, t p=1µs,<br>I Cmax defined by design - not subject to<br>production test)<br>I C<br>**----- End of picture text -----**<br>
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540<br>480 N<br>420 \<br>=<br>=eS 360 Nee<br>oO& 300 |ENE<br>\<br>io,<br>240 Pt EX tf<br>ts<br>180<br>ee 120 ee<br>= 60 LENPf ff | \KY<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ vj ≤ 175°C)
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90 225<br>eee, ae<br>80 200<br>70 175 VGE=18V<br>P| tt t y 7LpHi) fo<br>14V<br>60 150<br>11V<br>Sseto 50 o 125 10V |<br>stoo | &IE Ls> At]aaa<br>8V<br>aofe)FE 40 8fe)aoFE 100 po/<br>WwWO OWwW 6V |<br>fo |S 5V fi<br>30 75<br>20 50<br>ee vN<br>ee ee ee ee<br>10 25<br>0 0<br>ee ee ee e e 2<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
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Figure 3. Collector current as<br>temperature<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>**----- End of picture text -----**<br>
Figure 4. Typical ( _T_ vj=25°C)
7
IKW75N65EL5
CE(sat)
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225 220 Ld<br>T vj<br>200 E--- T vj = 150°C ss)<br>200 4 |<br>180<br>175 VGE = 20V Aly)<br>160<br>: 18V Sopp y pot<br>150 Spf<br>5 | §<br>im 15V ALA ee 140<br>aa / im<br>2 / aa<br>125 12V 7) Hf} 5 120<br>5 Va et | | tL lh<br>10V<br>:S 100 6eS ee 100 eee<br>8V<br>: ZY) =| |<br>a hee ef 80 |<br>7V<br>A 75 YL7) =a [<br>6V 60<br>50<br>5V<br>40<br>25<br>ee 20 ee<br>pAN | Le<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>1.4<br>— I C =16A td(off)<br>_ 1.3 Fs II CC | | | | 1000 UL eT ttfd(on)<br>z tr<br>Oo 1.2 a a ee ry<br>1.1<br>ra ze |) tr<br>raB“ 1.0 E Ww<ge 100 J} =} | =) | te<br>o E==aa a de<br>= 0.9 5> a ceeee eee eee<br>0.8<br>ck | —— S fo} [pp]<br>uwa 0.7 ee ° 10 a a<br>oO a a ee es ee<br>oO 4 a<br>~ 0.6 a eeee<br>0.5<br>0.4 1<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 225<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
test circuit in Figure E)
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=4 Ω , _R_ G(off)=4 Ω ,
8
IKW75N65EL5
CE(sat)
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1000<br>td(off) td(off)<br>|I tf a P| |1 tf eea ee<br>td(on) td(on)<br>tr tr<br>1000 | aa a eldoe I a a ee ee ee<br>a a<br>po f A<br>£ a a ee ee ee <2 100<br>Pee 100 C2 eS<br>Q ee a ee ee<br>= ce =a ee<br>QO a aee<br>= L_vz | | | | | | | gs<br>cr 10 esi 10 aa ssss<br>a ee ee<br>a pj} | | | | |<br>1 1<br>0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =75A, dynamic test circuit in I C =75A, R G(on)=4 Ω ; R G(off)=4 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>t t<br>**----- End of picture text -----**<br>
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7 25.0<br>typ. Eoff<br>min. 22.5 Eon<br>max. Ets<br>- El ])))] Be<br>6<br>20.0<br>g - tr i ll {ttt<br>_I weed =<br>17.5<br>5<br>e e Seeeenee<br>a a oD<br>L 15.0<br>7p) ><br>: 4 — ef 12.5<br>: Polo SKB LE<br>Lu Ps ) 10.0 aPa ssoe<br>3<br>1 ~~. EF 7.5 “ -<br>5.0<br>2<br>2.5<br>1 0.0<br>25 50 75 100 125 150 0 25 50 75 100 125 150 175 200 225<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. of ( _I_ C=1mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=4 Ω , _R_ G(off)=4 Ω , test circuit in Figure E)
9
IKW75N65EL5
CE(sat)
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16 8<br>Eoff Eoff<br>Eon Eon<br>14 Ets 7 Ets<br>7p) 12 ” 7p) 6<br>} 10 ft eT } 5 pobeT | | Le<br>g ° a ——<br>pee 8 4 Ee<br>9 6 a aan 3<br>pT ee de Ee<br>ee 4 ee 2 ee<br>2 1<br>0 0<br>0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =75A, dynamic test Figure E)
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =75A, _R_ G(on)=4 Ω ; _R_ G(off)=4 Ω , dynamic circuit in Figure E)
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10 18<br>Eoff V CC<br>Eon V CC<br>9 Ets 16 Es TT,<br>ELL] — = 130V<br>p 8 pp ee fT<br>e { oe 14<br>7<br>2 E 12<br>6<br>10<br>ef ue |<br>5<br>8<br>pf er<br>4<br>nn : 6 /\| |<br>O A <<br>EF 3 = - ()<br>Beep 2 4 E p<br>, ~ ae<br>1 2<br>0 0<br>200 250 300 350 400 450 500 0 100 200 300 400 500<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=75A)
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =75A, _R_ G(on)=4 Ω ; _R_ G(off)=4 Ω , dynamic circuit in Figure E)
10
IKW75N65EL5
CE(sat)
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1E+5<br>Cies<br>EE — a ST TT TENT<br>Coes<br>He--I Cres FE MII ec<br>a a ee ee = INL<br>J man etPe ZZ D = 0.5<br>0.1<br>1E+4<br>_ J A 0.2 a<br>0.1<br>re Tr Sse eC<br>& a a LY ae 0.05<br>0.02<br>Sf 4 2 Ee<br>Sa 1000 ee | ce 0.01<br>REO single pulse<br>0.01<br>- a5. ere ee Coe eet ettet<br>100 a————ee eee ZzoO eryBl)iA)ert AT Z A RIL-- |<br>————a a wellla0 | fe ola |<br>i: 1 2 3 4 5 6<br>ri[K/W]: 4.7E-3 0.0564027 0.0496416 0.1540335 0.0124251 1.7E-3<br>τ i[s]: 2.7E-5 2.5E-4 2.2E-3 0.0141795 0.1200871 1.91251<br>10 faFf | eefl TT 0.001 AA| A ETE VSI rie TTT<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>160<br>EEA T vj I F<br>T vj I F<br>. Aa<br>SILA 140 a e<br>Lu Cal D = 0.5 =<br>ram Mie: <ALL<br>0.1<br>0.2<br><x 7 a Ww 120<br>ra Ceev 0.1<br>Ww oo \<br>ou ay A<br>0.05<br>= Seeieeeet ent ae et Fr<br>0.02 100<br>z TnaayAVA |eee 1ee| e se KY~ PE yp<br>ee), nt 0.01 3 i<br>single pulse<br>Bee 80 ene<br>0.01<br>ae Te lll :<br>77 aeBatt Iane w m™ -<br>Q AT errr 60 ™<br>fe a | aan! Y ae<br>F SSEA | im oy Ha| ~ L—|<br>40<br>i: 1 2 3 4 5 6 7<br>ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3<br>τ i[s]: 1.0E-5 3.0E-5 2.2E-4 2.2E-3 0.01247 0.10291 1.85641<br>0.001 A A | 20 PPT Ty Ty]<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1000 2000 3000 4000 5000<br>t p , PULSE WIDTH [s] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
11
IKW75N65EL5
CE(sat)
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**----- Start of picture text -----**<br>
3.0<br>— T vj =25°C, I F =75A<br>ial T vj =150°C, I F =/75A<br>2.7 rE a eee<br>Ww Kk<br>F ft :<br>2.4<br><x o<br>ra,a 2.1 ocO><br>1.8<br>is Ooow<br>oSER 1.5 oruw<br>1.2<br>0.9<br>1000 2000 3000 4000 5000<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
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70 Ss<br>— T vj =25°C, I F =75A<br>oo T vj =150°C, I F =/75A<br>60 re ee eee ‘<br>-<br>“<br>tty der<br>50<br>--<br>40 ra a Bp4<br>30<br>f |rT<br>20 eee<br>10<br>0<br>1000 2000 3000 4000 5000<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>**----- End of picture text -----**<br>
Figure 22. Typical function ( _V_ R=400V)
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0 225<br>/<br>T vj I F T vj<br>—-o- T vj =25°C,=150°C, I F =75A=/75A —--- T vj _ == 25°C175°C / ’/<br>200<br>=e -1 | ) ;<br>175<br>LL _ 7<br>-2<br>| \<br>150<br>uwL\ imx<br>L: -3 125<br>b \ \ oO<br>Lu | aaa : 100<br>cc -4 B \ o<br>< : . $ /<br><t \ ~ I<br>75<br>PON LE<br>wi -5 oH OE<br>O\‘<br>50<br>-6<br>25<br>-7 0<br>1000 2000 3000 4000 5000 0.0 0.5 1.0 1.5 2.0 2.5<br>dI F /dt DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
12
IKW75N65EL5
CE(sat)
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1.8<br>— I F =16A<br>--- I F =35A<br>ss I F = 75A<br>1.6<br>1.4<br>Oo<br><x<br>Kk<br>I 1.2<br>O<br>><br>Q<br>1.0<br>i<br>Bee 0.8<br>0.6<br>0.4<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
13
IKW75N65EL5
Low�VCE(sat)�series�fifth�generation
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## PG-TO247-3
14
Rev.�2.1,��2014-12-10
IKW75N65EL5
Low�VCE(sat)�series�fifth�generation
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V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
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CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
15
Rev.�2.1,��2014-12-10
IKW75N65EL5
Low VCE(sat) series fifth generation
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## Revision History
## IKW75N65EL5
Revision: 2014-12-10, Rev. 2.1
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2014-12-10|Final data sheet|
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## Published by
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## Legal Disclaimer
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## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2014-12-10
16
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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