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IKW75N65EH5XKSA1
IGBT, 90 A, 1.65 V, 395 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 395W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 90A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 3.02 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IKW75N65EH5
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High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with full-rated<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full-rated RAPID 1 fast and soft antiparallel<br>diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications =<br>¢ Pb-free lead plating; ROHS compliant a,<br>* Complete product spectrum and PSpice Models: re liteg,<br>http://www.infineon.com/igbt/<br>Applications:<br>‘d<br>* Uninterruptible power supplies<br>* Solar converters<br>* Welding converters<br>* Mid to high range switching frequency converters 1<br>2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW75N65EH5|650V|75A|1.65V|175°C|K75EEH5|PG-TO247-3|
Datasheet www.infineon.com
2017-07-27
IKW75N65EH5
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## High�speed�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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Datasheet
IKW75N65EH5
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## High�speed�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||90.0<br>75.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||300.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||300.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||90.0<br>75.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||300.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||395.0<br>198.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw, PG-TO247-pin123<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.38|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.45|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Defined by design. Not subject to production test.
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## High�speed�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.33<br>1.30|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1<br>3000|75<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|104.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4200|-|pF|
|Output capacitance|_C_oes||-|130|-||
|Reverse transfer capacitance|_C_res||-|17|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=75.0A,<br>_V_GE=15V|-|160.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|28|-|ns|
|Rise time|_t_r||-|33|-|ns|
|Turn-off delaytime|_t_d(off)||-|174|-|ns|
|Fall time|_t_f||-|41|-|ns|
|Turn-on energy|_E_on||-|2.30|-|mJ|
|Turn-off energy|_E_off||-|0.90|-|mJ|
|Total switchingenergy|_E_ts||-|3.20|-|mJ|
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## High�speed�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=20pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|25|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|178|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.90|-|mJ|
|Turn-off energy|_E_off||-|0.30|-|mJ|
|Total switchingenergy|_E_ts||-|1.20|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=25pF|-|92|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.33|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-600|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=37.5A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=25pF|-|59|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.00|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|25.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1750|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|34|-|ns|
|Turn-off delaytime|_t_d(off)||-|194|-|ns|
|Fall time|_t_f||-|38|-|ns|
|Turn-on energy|_E_on||-|3.00|-|mJ|
|Turn-off energy|_E_off||-|1.00|-|mJ|
|Total switchingenergy|_E_ts||-|4.00|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=20pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|25|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|207|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|1.80|-|mJ|
|Turn-off energy|_E_off||-|0.40|-|mJ|
|Total switchingenergy|_E_ts||-|2.20|-|mJ|
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## High�speed�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=25pF|-|123|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|3.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|43.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2000|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=37.5A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=25pF|-|108|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|38.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1050|-|A/µs|
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400<br>|<br>ere<br>er K 350 A] ff<br>100<br>af 300 PN<br>x/=<br>| 250<br>CH LEN |<br>10<br>en<br>SE NP<br>5O aSS 200150 Pf | AQ<br>: PL LT TTT EIN \<br>ae<br>1<br>100<br>SePt ETat 50 TTTf]NC\<br>not for linear use<br>0.1 [mi mmio 0 PPT Py XN<br>TT |<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs, temperature<br>I Cmax defined by design - not subject to ( T vj ≤ 175°C)<br>production test)<br>100 300<br>VGE = 20V<br>90 270 18V<br>pt | |<br>E T i 15V<br>80 240<br>N e eee 12V<br>70 210<br>10V<br>ef |Ko Js | oo<br>8V<br>60 180<br>pttIN ge Ey 7V<br>oe 50 150<br>6V<br>40 120 4V<br>pt UN 30 90 NY, Gane<br>gf oFNg LAA<br>20 60<br>ee eee) Come<br>10 30<br>A FX<br>ee<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
Datasheet
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**----- Start of picture text -----**<br>
300 300<br>VGE = 19V Tvj = 25°C<br>270 17V SLL 270 | Tvj = 150°C ne<br>15V<br>240 OOP SAY[J 240 EL|<br>Zx 210 12V >aSNWY / | z 210 l!/<br>10V<br>: ~~ Oo L Zzx<br>7V SOW<br>180 180<br>Zz |) eo Et<br>7V<br>3 NOY Las |<br>150 150<br>© | 6V >re -a]<br>ef. 120 5V NNNaw ye. 120 Ep|<br>s 1 IWR ag tL<br>90 90<br>60 60<br>BERD 2SaRR nee eee eee<br>BaD ROX/AeNeE eee eee<br>30 30<br>AN Le<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3 4 5 6 7 8 9 10<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>3.5 LY 1000 eee ———ee———=eTT—EEEe<br>IC = 37.5A aa Ssa<br>IC = 75A a a seee ee ee<br>IC = 150A<br>_ = | aa<br>3.0<br>= a = pt TT es ee<br>6: P| ~a - pittEERE| | tT |<br>= 2.5 ra : 100 =<br>D q— £ i<br>o aa (0 ee ee ee oa ee ee<br>Lu — = a ee a ee eee<br>2.0<br>E - ee ee a ee ee ee<br>fi — Q pf | ef | aa<br>Bp ep to Looe<br>a2 ae<br>1.5 10<br>5O. aa ea eeeee ee ee<br>1.0<br>td(off)<br>tf<br>td(on)<br>tr<br>aaa = fp=<br>0.5 1<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 225<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =150°C, V CE=400V,=400V,<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =150°C, _V_ CE=400V,=400V, _V_ GE =0/15V, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , test circuit in Figure E)
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IKW75N65EH5
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**----- Start of picture text -----**<br>
1000<br>td(off) aa esaee<br>tf<br>1000 E td(on) ] a<br>H tr pf} |__| __| Tf a<br>H a ee a ee po<br>es a ee ee eeee<br>po ——<br>100<br>= Poy eeee<br>Lu im a a<br>ee= = ————a ee<br>F + - ns<br>© _ OQ peosevoeneapecnenserrors perreerrenef sete cnenfape<br>oO 100 po eT oO<br>E a a a<br>ee e e eee<br>a a a as ee e 10<br>- Poets | TT 7 aa<br>a<br>a; -<br>td(off)<br>tf<br>td(on)<br>tr<br>10 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =75A, dynamic test circuit in I C =75A, R G(on)=8 Ω ; R G(off)=8 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>6.0 20<br>typ. Eoff<br>5.5 min. 18 Eon<br>max. Ets<br>=. = = /<br>WW /<br>5.0 16<br>x4 = -<br>aO Sse £ //<br>= 4.5 Toye ~~ oOa) 14 / /<br>; 4.0 : S 12<br>5 ~SL > ‘ .<br>we 3.5 |——~ a “Ss 25o 10 / / Zzy,<br>ee ee ee<br>fFa 3.0 —™= e2 8 Va<br>E ~SAL ™ = /\ 47<br>th 2.5 ~~ | 8 6 ‘ols<br>A S _~ = V f<br>O). 2.0 ee~ N a; 4 4 LZ<br>Ane<br>1.5 2<br>ee 2 a [ Z|<br>1.0 0<br>25 50 75 100 125 150 0 25 50 75 100 125 150 175 200 225<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.75mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , test circuit in Figure E)
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**----- Start of picture text -----**<br>
14 7<br>Eoff<br>Eon 7<br>Ets Y<br>12 f<br>7<br>> /<br>(op)Ww 10 7<br>o<br>7) /<br>aa] /<br>> 8<br>im 4 —<br>Ww<br>Oo 6 7 A<br>7 =~<br>an 4 LL<br>4<br>= a7 7<br>2<br>0<br>5 15 25 35 45 55 65 75 85<br>R G , GATE RESISTANCE [ Ω ]<br>E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =75A, dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
5.0<br>Eoff<br>4.5 | Eon<br>Ets<br>om<br>> 4.0 a<br>oO _ _-7<br>Ww 3.5 —<br>o Loo<br>aa]7) 3.0 jePf ff= —<br>> —<br>im 2.5 —<br>Ww —-<br>2.0<br>oOan 1.5<br>= 1.0 |<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =75A, _R_ G(on)=8 Ω ; _R_ G(off)=8 Ω , dynamic circuit in Figure E)
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5.5 16<br>Eoff VCE = 130V<br>5.0 E Eon e} es VCE = 520V<br>Ets “ 14 Ey a /<br>“ /<br>4.5 a<br>2); 7) Js 12<br>oOnag 4.03.5 a , “eWe Zz ATT<a 10 7/<br>Sf 8 3.0 Y<br>ra “ 4 or<br>Pp y Lu 8 Z|<br>Zz foot7 Za = :<br>2.5<br>oO 7 7 “ Ww<br>Zzx 2.0 Fa “oO Lu= 6 / [|<br>O a <<br>1.5<br>ee eae ee 4<br>in. 1.0 a _ sis”<br>2<br>0.5<br>ee eee ee<br>ee<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=75A)
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =75A, _R_ G(on)=8 Ω ; _R_ G(off)=8 Ω , dynamic circuit in Figure E)
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IKW75N65EH5
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**----- Start of picture text -----**<br>
Cies<br>1E+4 Coes<br>Cres<br>FF— | er EDST TT att<br>SS SS]s 0.1 UNMYA Ve D = 0.50.2<br>l_ Li Ml —— | 0.1<br>0.05<br>eto)if 1000 | | ||e= fa i | L Va Y) | WT |<br>0.02<br>3 es PN Le TI<br>z hs<br>0.01<br>SeeeOx |OZeeee~>— ~ 0.01 |mal|)ee| AerAWge otCher single pulse |<br>° — Zz pt A<br>7 uw aa ee ee |<br>100 ff EC<br>Aaa a en ns re LAIea ACEI CU ReallIl<br>A i yf<br>[Sp PAN TIE ET] im ||<br>P AM TE EIT FT TTT<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3<br>τ i[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237<br>10 Po | ce 0.001 | ne<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>200<br>o_o oon ooo ae<br>Tvj = 25°C, IF = 75A<br>ST TT eri 180 a S Tvj = 150°C, I a F = 75A<br>_ Te .<br>5S Se D = 0.5 = 160 E NS<br>ee" 0.1 A 0.2 || 2 , SN<br>Wwa ee7 0.1 oea | = 140 XX<br>0.05<br>oO = eg)EE ee | = ||a a = 120 NNwa~<br>= ri V1 Vf TTT |_| 0.02<br>att it a SN S<br>0.01<br>CA olUN 100 | 7<br>single pulse<br>& cot) At il 8 a SD<br>80<br>sien: Wiel : —~<br>0.01<br>— | ATTA<br>ZzoOa ABe)2 (A000| RL o>Ww 60 pT<br>< TA * {ip<br>& AAI TTI TT ll<br>- a 40<br>e e<br>i: a 1 2 3 4 | ee 5 6 7 | | 20 roy Ff<br>ri[K/W]: 3.1E-4 0.014345 0.094354 0.098809 0.228276 0.019674 2.0E-3<br>τ i[s]: 5.0E-6 2.7E-5 2.2E-4 2.2E-3 0.012472 0.102908 1.856405<br>0.001 0<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 500 700 900 1100 1300 1500<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
5.0 90<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>Tvj = 150°C, IF = 75A Tvj = 150°C, IF = 75A<br>g 4.54.0 aeT tT | ee ===]| ye£ 8070 | ( 7] f tLY/<br>3.5<br>pee<br>60<br>3.0<br>Bee pp<br>or or 50<br>2.5<br>40<br>2.0<br>w y y 7<br>30 =<br>mTpty 1.5 — Ee=<br>20<br>1.0 rf<br>0.5 10<br>0.0 0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 150<br>-500 r—} — | 140 e TTvjvj = 25°C = 150°C t | | A<br>~ 130 —<br>1000 |NIX). Se<br>ZF 120 a<br>i -1500 NT. YO\ ee 110 Po}ee|ee|<br>A -2000 nO 100<br>a<br>90<br>-2500<br>80<br>oo eee<br>-3000<br>70<br>sf a<br>||).<br>-3500<br>< | 8 60 Po} | | ct tf<br>PB} -4000 | \ NB< 50 Pe{| | | |<br>Sa nc 7 40<br>i -4500 ee<br>30<br>-5000 Tvj = 25°C, IF = 75A<br>Tvj = 150°C, IF = 75A 20<br>-5500 a— ee ee ee2<br>10<br>a P| | bey |tt<br>-6000 0<br>500 700 900 1100 1300 1500 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Figure 23. Typical diode peak rate of fall of reverse Figure 24. Typical diode forward current as a function<br>Q rr I rr<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
( _V_ R=400V)
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2.50<br>IF = 35A<br>IF = 75A<br>2.25 IF = 150A<br>2.00<br>Ww —<br>Oo<br><x 1.75<br>Kk<br>I<br>><br>Q 1.50<br>m4<br><x<br>1.25<br>a<br>1.00<br>0.75<br>0.50<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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## High�speed�series�fifth�generation
## **Package Drawing PG-TO247-3**
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## High�speed�series�fifth�generation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## High�speed�series�fifth�generation
## **Revision�History**
IKW75N65EH5
## **Revision:�2017-07-27,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2015-05-20|Final data sheet|
|2.2|2017-07-27|Correction Fig.1|
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Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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