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IKW50N65SS5XKSA1
IGBT, 650 V, 80 A, 274W, To-247, 1.35 Vsat
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5 S5 CoolSiC Gen VI
- Power Dissipation: 274W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 3.38 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## IKW50N65SS5
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TM<br>**----- End of picture text -----**<br>
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TRENCHSTOP [TM] 5 S5 IGBT co-packed with full-rated 6 th generation<br>CoolSiC [TM] Schottky barrier diode<br>Features and Benefits: C<br>¢ Ultra-low switching losses due to the combination of<br>TRENCHSTOP 5 and CoolSiC technology<br>* Very low on-state losses<br>¢ Benchmark efficiency in hard switching topologies<br>G<br>¢ Plug-and-play replacement of pure silicon devices<br>E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice models:<br>http://www.infineon.com/igbt/ —<br>Potential Applications: "i><br>¢ Industrial Power Supplies yr id<br>- Industrial SMPS<br>- Industrial UPS<br>* Energy Generation<br>- Solar String Inverter<br>* Energy Distribution 1<br>- Energy Storage 2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW50N65SS5|650V|50A|1.35V|175°C|K50ESS5|PG-TO247-3|
Datasheet www.infineon.com
2020-07-27
IKW50N65SS5
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## Hybrid�CoolSiC[TM] �IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IKW50N65SS5
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## Hybrid�CoolSiC[TM] �IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>60.5|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||200.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||200.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||57.5<br>38.5|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||274.0<br>137.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.55|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.00|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature"
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## Hybrid�CoolSiC[TM] �IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.55<br>1.65|1.70<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.55<br>1.65|1.50<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|1300<br>-|µA|
|Zero gate voltage collector current|_I_CES|_V_CE=480V,_V_GE=0V<br>_T_vj=25°C|-|-|40|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=250kHz|-|2660|-|pF|
|Output capacitance|_C_oes||-|530|-||
|Reverse transfer capacitance|_C_res||-|10|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|110.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|140|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.32|-|mJ|
|Turn-off energy|_E_off||-|0.55|-|mJ|
|Total switchingenergy|_E_ts||-|0.87|-|mJ|
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## Hybrid�CoolSiC[TM] �IGBT
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|155|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.14|-|mJ|
|Turn-off energy|_E_off||-|0.30|-|mJ|
|Total switchingenergy|_E_ts||-|0.44|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|163|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.39|-|mJ|
|Turn-off energy|_E_off||-|0.90|-|mJ|
|Total switchingenergy|_E_ts||-|1.29|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|191|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.17|-|mJ|
|Turn-off energy|_E_off||-|0.50|-|mJ|
|Total switchingenergy|_E_ts||-|0.67|-|mJ|
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IKW50N65SS5
## TM Hybrid CoolSiC IGBT
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300 90<br>80<br>250 >). ERE<br>70<br>200 60<br>ei Mo TACT<br>Xs FENCE<br>50<br>seen<br>150<br>40<br>PL 100 _ceenen 30<br> Ne EN<br>20<br>50<br>10<br>PN Gee<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C T C<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>200 200<br>175 175<br>VGE=20V VGE=20V<br>150 150<br>18V 18V<br>AL |eg.<br>15V 15V<br>125 125<br>12V 12V<br>100 10V 100 10V<br>eee 8V eR ees 8V ae<br>75 7V 75 7V<br>6V 6V<br>2Ure /AGenL ene 400<br>50 50<br>5V 5V<br>25 25<br>YR<br>| |ye<br>_FoO<br>0 | 0 L A<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE V CE<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
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IKW50N65SS5
TM
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200 Lt 2.50<br>Tj=25°C IC=25A<br>Tj=150°C IC=50A<br>175 |/— 2.25 IC=100A<br>z<br>Oo<br>150 ll 2.00<br>< / i ©<br>: i e<br>iW& 125 [Ii<x2 1.75<br>5/ i<br>. E<br>a 100 Ee 1.50<br>a 75 © 1.25<br>5° | ee<br>50 (e) 1.00<br>f | =e<br>25 0.75<br>0 0.50<br>2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
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Figure 5. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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1000 aa 1000<br>1 | td(off) a ee ee ee t| td(off) a poel<br>I tf p o | tf ee<br>td(on) td(on)<br>tr tr<br>F | p FE |e eee eee<br>p o | | pa<br>ee<br>ra= 100 a eSee ee= 100 a e es e<br>ip) Ee ee es ee ip) a ss<br>uw a e s es<br>= a a a h<br>- PN = a eeee<br>Q poPON NPeg a eeee e ee eea ee ee<br>te FO | eon |<br>=<br>=<br>2)- 10 a es =2) 10 ae<br>a a - a es<br>po po<br>a Ce a a<br>ae a eeee<br>a ss a ee ee<br>a Po; | UT [TT]<br>1 1<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
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Datasheet<br>**----- End of picture text -----**<br>
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(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=9 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =50A, Dynamic test<br>7 Figure E)<br>**----- End of picture text -----**<br>
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TM
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1000 aa 5.5<br>1 H td(off) a aa a I— typ. |<br>I tf a ee ee ee eee _<br>I td(on) a ee 5.0<br>tr<br><x<br>4.5<br>ip)— 100 pose (e)i 4.0 ee<br>im a a a<br>= a a eee | -~——~—_W<br>F a ee rd 3.5 —<br><= -<br>3.0<br>tert —x_<br>=<br>3<br>2)7 10 a == 2.5 ™<br>po Ww<br>eeSS<br>a eee 2.0 | ft ff<br>eseo)<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =50A, R G=9 , Dynamic test circuit in<br>E)<br>**----- End of picture text -----**<br>
Figure 10.
( _I_ C=0.50mA)
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6 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>5 2.5<br>a a vo<br>ap)E ap)z a“<br>on on 4<br>(op) 4 y; io) 2.0 :<br>e) , @) “<br>—! 4 4 “<br>oO ¢ oO “<br>w / mw Psa<br>Wi 3 Wi 1.5<br>Lu ¢ Lu °<br>O ra O a<br>Zz ’ Zz<br>2 1.0<br>E Y 7 F a er<br>= ao o = Z<br>no 7 “7 ” 7<br>1 A a 0.5 7<br>Yo Zz rs-_— - - — 77<br>Lo<br>0 0.0<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=9 Ω , Dynamic test circuit in V GE =15/0V, I C =50A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
2.00<br>Eoff<br>Eon<br>1.75 Ets<br>><br>1.50<br>nm<br>7) Pra<br>op) “7<br>7 1.25 -<br>1.00<br>5<br>2 —<br>Zz 0.75 = —_|<br>=ebevTTs fo,<br>0.50<br>0.25<br>0.00<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br>
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2.00<br>Eoff<br>Eon<br>1.75 Ets<br>><br>1.50<br>nm 247<br>7) 7<br>op) 2 o*<br>o 1.25 Pee<br>1.00<br>fi et —<br>2 < —<br>Zz 0.75 cae Le — |<br>=s eee[|a<br>0.50<br>0.25<br>0.00<br>175 200 250 300 350 400 450 500<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C = 50A ; R G=9 , DDynamici test circuitircuit iin<br>Figure E)<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =150°C, _V_ GE=15/0V, _I_ C =50A ; _R_ G=9 , DDynamici test circuitircuit iin Figure E)
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0.1<br>Tvj=175°C<br>x= po——————————— Tvj=150°C NT<br>B 0.01 BN<br>im fooSe Tvj=100°C NNUCe<br>~ po NNN<br>Tvj=25°C<br>CO5 0.001 LANAAe INNS en ee<br>EFx [[_SS77h =<br>1E-4<br>OouwO eeaee ae a a oo<br>e 1E-5 {foup—____|____|\i\\|\ | |7 wf7 |<br>O a ee ee Ae eee<br>> e—|C (<se\L CPP<br>\W 1E-6 4<br><x SSS eS oeE—=L——EE—EEE——e<br>i) po A<br>i 1E-7 Po<br>Zl es es ee ee<br>a ee<br>1E-8 ee ee<br>100 200 300 400 500 600 700<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I CES<br>**----- End of picture text -----**<br>
Figure 15.
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16<br>130V<br>520V<br>= ‘<br>14<br>7<br>12<br>S<br>//<br>TO)< 10 /) /<br>8<br>i VA<br>E<br>5s<br>bu 6<br>x<br>ee)<br>. 4<br>2<br>0<br>0 20 40 60 80 100 120<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 16. Typical ( _I_ C=50A)
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IKW50N65SS5
TM
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1E+4 J CCiesoes | PTTSseTT Sti Sti ett Sth nat<br>Cres<br>I| er a _ A BB a<br>aa ae ee s e s c e s mT 0.1 |||”I| D=0.5 HC t<br>1000 ~ 9x eeOeeget eee ioe sais’A SstTMoe away 0.2 Ceeen<br>0.1<br>— ———————————————— ee ie an<br>oe2 0 Od Aee7, 0.05<br>0.02<br>g ES2<br>2 [oe 0.01 HY 0.01 HLT<br>z 100 ee ee eee ES SS aa CL single pulse SL<br>i 0<br>SS f<br>a a a 2 BUG ARAN PAG A a<br>Poses uw tL<br>0.001 ay 20 Re mn<br>pT TV ee<br>10<br>J ||<br>———— a Te cat aie,<br>a a<br>a Yai i: TT 1 2 3 4 5<br>ri[K/W]: 0.030556 0.137971 0.162007 0.15972 0.059746<br>τ i[s]: 2.4E-5 3.1E-4 3.1E-3 0.024936 0.134448<br>1 fF | | fl tl 1E-4 A | *S& d<br>0 5 10 15 20 25 30 1E-8 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 17.
> Figure 18. IGBT ( _D_ = _t_ p/T)
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1<br>S oon or on A<br>x ee<br>WwW ego gf D=0.5<br>9 eel 0.2 |<br>< Seem 0.1<br>¢ Ce UM UII<br>Ma 0.05<br>0.1 (Il Ul<br>Zz Co ee ee 0.02 CME<br>S ere | A Te 0.01 0 |<br>Y 2 i UT<br>Ww ST TO tN single pulse Hh<br>F Ey AAS A A<br>bi ruYrQU yi20<br>7) 0.01 aco M R<br>YT Ta AT —7 Th<br>E A |!<br>g Fae tt i}<br>- PTI TAI TA TT TT cist, Ce=reiRe Ill<br>CUT TAL AAT UT TTT<br>TTT AHA[yl | YM i: 1 CA 2 CU 3 CTA 4 1<br>ri[K/W]: 0.061974 0.145547 0.232966 0.559513<br>τ i[s]: 5.5E-5 6.3E-4 0.011391 0.389105<br>a [ TT<br>0.001<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
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225<br>200<br>175<br>150<br>125<br>0<br>Q<br>wl<br>100<br>=<br>Ww<br>75<br>:<br>Q<br>50<br>25<br>0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>I Fpuls<br>**----- End of picture text -----**<br>
Figure 20.
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TM
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150 3.5<br>Tj=25°C IF=20A<br>Tj=150°C IF=40A<br>IF=80A<br>[= / 3.0 = |<br>120 P TT<br>tA A<br>2.5<br>< BRA = a<br>z / oO “7<br>uw“eta 90 PA/ 7 <xEFa 2.0 fe<br>es |i ffi ls<br>e Q<br>< =_<br>1.5<br><= 60 | fy =-<br>&2 7 &<br>| / 2 1.0 4<br>30<br>one 0.5 Py pp yd<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
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## Hybrid�CoolSiC[TM] �IGBT
## **Package Drawing PG-TO247-3**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>
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## Hybrid�CoolSiC[TM] �IGBT
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## Hybrid�CoolSiC[TM] �IGBT
## **Revision�History**
IKW50N65SS5
## **Revision:�2020-07-27,�Rev.�2.1**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2020-03-20|PreliminaryData Sheet|
|2.1|2020-07-27|Final Data Sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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