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IKW50N65RH5XKSA1
IGBT, 650 V, 80 A, 305W, To-247, 1.65 Vsat
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5 H5 CoolSiC Gen VI
- Power Dissipation: 305W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 2.28 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## IKW50N65RH5
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TM<br>**----- End of picture text -----**<br>
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TRENCHSTOP [TM] 5 H5 IGBT co-packed with half-rated 6 th generation<br>CoolSiC [TM] Schottky barrier diode<br>Features and Benefits: C<br>¢ Ultra-low switching losses due to the combination of<br>TRENCHSTOP 5 and CoolSiC technology<br>¢ Benchmark efficiency in hard switching topologies<br>¢ Plug-and-play replacement of pure silicon devices<br>G<br>* Maximum junction temperature 175°C<br>E<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* Complete product spectrum and PSpice models:<br>http://www.infineon.com/igbt/<br>—<br>Potential Applications: 7 ineop<br>¢ Industrial Power Supplies<br>-- IndustrialIndustrial SMPSUPS 7 4 £<br>* Energy Generation<br>- Solar String Inverter<br>* Energy Distribution<br>- Energy Storage 1<br>¢ Infrastructure — Charge 2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW50N65RH5|650V|50A|1.65V|175°C|K50ERH5|PG-TO247-3|
Datasheet www.infineon.com
2020-07-27
IKW50N65RH5
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## Hybrid�CoolSiC[TM] �IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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## Hybrid�CoolSiC[TM] �IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>56.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||200.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||200.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||33.7<br>22.8|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||75.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||305.0<br>152.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.50|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature"
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## Hybrid�CoolSiC[TM] �IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.55<br>1.65|1.50<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|700<br>-|µA|
|Zero gate voltage collector current|_I_CES|_V_CE=480V,_V_GE=0V<br>_T_vj=25°C|-|-|25|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=250kHz|-|2660|-|pF|
|Output capacitance|_C_oes||-|320|-||
|Reverse transfer capacitance|_C_res||-|10|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.23|-|mJ|
|Turn-off energy|_E_off||-|0.18|-|mJ|
|Total switchingenergy|_E_ts||-|0.41|-|mJ|
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## Hybrid�CoolSiC[TM] �IGBT
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|200|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.05|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.10|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|200|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.30|-|mJ|
|Turn-off energy|_E_off||-|0.27|-|mJ|
|Total switchingenergy|_E_ts||-|0.57|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|250|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.16|-|mJ|
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IKW50N65RH5
## TM Hybrid CoolSiC IGBT
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320 90<br>280 Co) 80 Ee<br>70<br>240 PNTyt tp E NE<br>60<br>PENCE} ENE<br>200<br>50<br>160<br>SGnNGeesee 40 Nen<br>120<br>30<br>PEOOAS SE pe ASH<br>PNGB RRR AG<br>80<br>20<br>Sa Seen<br>40<br>10<br>PENSCETTE ELA<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>200 200<br>180 180<br>SRRnn) Seen<br>160 160<br>ey VGE=20V VGE=20V re<br>18V 18V<br>140 140<br>15V 15V<br>Le 7 4. | Sey<br>120 120<br>12V 12V<br>100 10V 100 10V<br>8V 8V<br>80 80<br>ef 7V 7V Eee<br>60 6V 60 6V<br>5V 5V<br>g i’ arn g i" Za<br>40 40<br>WEL offen<br>20 20<br>RNOLOK<br>APN) | LA<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
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200 Lt n 2.50<br>Tj=25°C IC=12.5A<br>180 Tj=150°C IC=25A<br>; 2.25 = IC=50A<br>160 z<br>Oo<br>Co p t Ee 2.00 ey ] | fd1<br>< 140 ra<br>im& 120 |<x2 1.75<br>.<br>a 100 EeE 1.50<br>80<br>ui| | © 1.25<br>°<br>60<br>. 3 1.00<br>/ 2_ f | | i] [|]<br>40<br>0.75<br>20<br>7AL<br>0 0.50<br>2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
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Figure 5. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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1000 aa 1000<br>1 | td(off) a ee ee t| td(off) a et es ee ee<br>I tf ee ee ee | tf a ee es ee eee<br>td(on) td(on)<br>tr tr<br>| p o | — ——————EE<br>P p a eee<br>£ 100 e e eeeee ees 100 a e eSee<br>ip) a ee a<br>uw aa cees ip) a ee esee<br>= PP | a Th<br>- a ee at ee eee = a ee ee ee ee eee<br>Q a a eea eeee ee eee a eeeee<br>eo nesee =<br>Eee E wea<br>2)- 10 a A a 2) 10 eeDe<br>Sa - a es<br>a es a<br>sea a<br>a ee ee a a es es ee<br>a es ee a ee<br>es ee ee ee ee a a<br>1 1<br>0 30 60 90 120 150 5 15 25 35 45 55 65<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=12 Ω , Dynamic test circuit in V GE =15/0V, I C =25A, Dynamic test circuit in<br>Datasheet Figure E) 7 Figure E)<br>t t<br>**----- End of picture text -----**<br>
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1000 aa 5.5<br>1 H td(off) a aa a I— typ. |<br>I tf a ee ee ee eee _<br>td(on) 5.0<br>I a eeee<br>tr<br>4.5<br>e e ee<br>—_ = TT7 5<br>e)<br>ee e e<br>iFip) 100 aa es Qi 4.0 ee<br>im poa a a (e)<br>- a Wy 3.5 a<br><= -<br>3.0<br>e= e ee ee e e —<br>3 = ™<br>2) 10 a = 2.5<br>7 a ee es PePPrrrrrr Titi<br>Lannnmsnecenpecnenenesneeseeeeea Ww<br>SS<br>a eee 2.0 | ft ff<br>eseo)<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.5mA)<br>I C =25A, R G=12 , Dynamic test circuit in<br>Figure E)<br>8 1.6<br>Eoff Eoff<br>Eon / Eon<br>7 | Ets 7 4 1.4 | Ets<br>/ ra<br>£ 6 / £ 1.2 ‘<br>uw 7 uw ¢<br>io) / 7) ¢<br>” / 2) :<br>fe) 5 f fe) 1.0 Z<br>aa) v2 aa) Y<br>> / > re<br>ui 4 f AY ig 0.8 °<br>Zz 0 Zz ”<br>uw 7 Ww -<br>Zz 3 v2 Zz 0.6 v4 -<br>=7=<br>pE=,/ pE“ A<br>2 0.4<br>“ / = a“<br>cora 7 ° “oe<br>1 0.2<br>0 0.0<br>0 30 60 90 120 150 5 15 25 35 45 55 65<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=12 Ω , Dynamic test circuit in V GE =15/0V, I C =25A, Dynamic test circuit in<br>Datasheet Figure E) 8 Figure E) V2.1<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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0.7 0.7<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.6 0.6<br>=) wo} os Pan<br>& ra & - “<br>(dp)Ww 0.5 -- -* nWw 0.5 Praa<br>io) - io) Prat<br>io) io) 7<br>_ _ Pra<br>> 0.4 > 0.4 > o*<br>i 4 ww -<br>0.3 0.3<br>E =~ $ —_—_<br>5 5 -=<br>p 0.2 a 0.2<br>0.1 0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =25A, _R_ G=12 ,Dynamic test circuit Figure E)
Figure 14.
(inductive load, _T_ vj =150°C, _V_ GE=15/0V, _I_ C =25A, _R_ G=12 , Dynamic test circuit Figure E)
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0.1 16<br>Tvj=175°C 130V<br>x —————————— 520V<br>= a Tvj=150°C 14 =<br>B 0.01 ee ee 7<br>im foo Tvj=100°C N\N | Y<br>id re eeee<br>po NNN 7<br>~ i Tvj=25°C — ee = 12 S| | ft | Ae<br>5 KO Qe S /<br>0.001<br>oOCO | \A\ INNe J /<br>Fe [_ee7ee ae 7h Oeee ©)< / //<br>10<br>oe 1E-4 ee ee ee<br>re) —————— eee Ly een MO A<br>O es en ee eee meee Ay commen 8<br>uw a ee ee ee ee 4 eee E 7<br>e 1E-5 {fou i\\) 7) | 5s /<br>6<br>> a ee ee eee Ae eee x<br>\W 1E-6 ( )<br><x SSS EeE—=E——EE—EEEE——e . 4<br>i) a ee ee 4 ee ee eee<br>i 1E-7 Po 2<br>ee ee ee ee ee ee<br>1E-8 a es ee ee ee ee 0<br>100 200 300 400 500 600 700 0 20 40 60 80 100 120<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>I CES<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=50A)
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IKW50N65RH5
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1E+4 ee 1 eetty<br>Cies<br>H a eee<br>I Coes a a<br>Cres<br>| a a = a<br>FT OOC‘“dS:C a YT]<br>D=0.5<br>1000 Ro se<br>0.2<br>a ee ee er ~ | VF/ it<br>_eea aL ts Ww7) 0.1 2”,De au/ 2 an | 0.10.05 |<br>= a oFSeries? ciaet i aatieeeanl<br>O A 0.02 a<br>Z ee ee ee ee ee = - mmmNN oer (M7 AMUN 0.01 I<br>e 100 arf | ff} Zz CM Teer er TT<br>a a J J yn<br>Oo< esa a ee ee a oforn AT single pulse 1ll<br>a a Y yy y<br>§ oe Fdial ball<br>Pp oN Wu 0.01 pA<br>pe 2Q art A A a Re iil<br>10 a “f<br>a es e VY = =<br>Se nn eG ST reel<br>J LIM TM U i: ET 1 TET 2 3 VT<br>ri[K/W]: 0.162188 0.227827 0.109985<br>τ i[s]: 8.6E-4 0.011122 0.095681<br>1 PF | fT 0.001 luly ll a<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=250kHz)<br>210<br>1<br>S As 180 \<br>= | 7<br>D=0.5<br>0.2<br>5) Sim SS SETI = 150<br>z 0.1 dear 0.1 iil|| =<br>a | A 0.05 =a?<br>ww a A 0.02 w 120 \<br>2 ES A a a)<br>vil 0.01 8 \<br>ill 8<br>0.01 single pulse<br>EbaaFr AEEEtet7 a) SS 90 \<br>a A a A Q<br>ZzB FFT TTC Peco Ry Re Q 60<br>0.001<br>8 LU UA HG<br>A | | ee ee |<br>| 30<br>AL EE<br>i: 1 2 3<br>ri[K/W]: 0.2736 0.3598 0.484<br>S C τ i[s]: 0.367281 T 0.482996 0.649723<br>1E-4 0<br>1E-5 1E-4 0.001 0.01 0.1 1 10 25 50 75 100 125 150 175<br>t p , PULSE WIDTH [s] T vj , JUNCTION TEMPERATURE [°C]<br>C<br>c)th(j-<br>Z<br>I Fpuls<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20.
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TM
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80 LY 3.0<br>Tj=25°C IF=10A<br>Tj=150°C IF=20A<br>70 A IF=40A<br>/ 2.5 oe<br>60<br>5 / O 2.0<br>Lu 50 Y <<br>te / a<br>= / S Le<br>40 1.5<br>2 / feQ =<br>30<br>& S P|<br>fe) // a 1.0 ee<br>20<br>0.5<br>10<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21. Typical diode forward current as a function Figure 22.
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## Hybrid�CoolSiC[TM] �IGBT
## **Package Drawing PG-TO247-3**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>
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IKW50N65RH5
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## Hybrid�CoolSiC[TM] �IGBT
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## Hybrid�CoolSiC[TM] �IGBT
## **Revision�History**
IKW50N65RH5
## **Revision:�2020-07-27,�Rev.�2.1**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2020-03-20|PreliminaryData Sheet|
|2.1|2020-07-27|Final Data Sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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