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IKW50N65F5FKSA1
IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:305W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 305W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.77 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1
## IKW50N65F5
## IKW50N65F5
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High speed 5 FAST IGBT in TRENCHSTOP_ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>* Low gate charge Q G<br>E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: =<br>http://www.infineon.com/igbt/<br>Applications:<br>* Solar converters rd<br>¢ Uninterruptible power supplies ’ £<br>* Welding converters<br>* Mid to high range switching frequency converters<br>Package pin definition: G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW50N65F5|650V|50A|1.6V|175°C|K50EF5|PG-TO247-3|
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IKW50N65F5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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IKW50N65F5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||80.0<br>56.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||150.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||150.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||40.0<br>27.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||305.0<br>152.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.50|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||1.50|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.1,��2015-05-05
4
IKW50N65F5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=27.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|65|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|175|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.49|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.65|-|mJ|
Rev.�2.1,��2015-05-05
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IKW50N65F5
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|195|-|ns|
|Fall time|_t_f||-|10|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.15|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1200A/µs|-|52|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.55|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-450|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1200A/µs|-|32|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.26|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1619|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|202|-|ns|
|Fall time|_t_f||-|3|-|ns|
|Turn-on energy|_E_on||-|0.68|-|mJ|
|Turn-off energy|_E_off||-|0.21|-|mJ|
|Total switchingenergy|_E_ts||-|0.89|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|245|-|ns|
|Fall time|_t_f||-|12|-|ns|
|Turn-on energy|_E_on||-|0.18|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.24|-|mJ|
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IKW50N65F5
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High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1200A/µs|-|81|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.24|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-340|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1200A/µs|-|46|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|19.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-825|-|A/µs|
Rev.�2.1,��2015-05-05
7
~~High speed switching series fifth generation~~ IKW50N65F5
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100<br>a A SA<br>— ee ee<br>< ae<br>5 TICES<br>esd 10 Sale:<br>tp=1µs<br>CO Re eee<br>oO p—} ft tt a et ASes<br>| 10µs Let<br>or ee Aa em eee esa<br>o eT Ce NINTTT<br>50µs<br>p eer eebeclin Nl<br>100µs<br>: terme<br>BL 1 etl 200µs ect NU<br>500µs<br>|PCraatt<br>DC<br>eet<br>0.1<br>1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area<br>( D =0, T C =25°C, T vj 175°C; V GE=15V.<br>Recommended use at V GE ≥ 7.5V)<br>I C<br>**----- End of picture text -----**<br>
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300<br>= | | |<br>270 \<br>240<br>ee PN FF |<br>z<br>= 210 PINT ff<br>=og 180 Pot KP]<br>7) 150 Pf fF NG]<br>o<br>120<br>[KA<br>NT<br>9060 PotPIN<br>30 a ee eee<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ vj ≤ 175°C)
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**----- Start of picture text -----**<br>
90 150<br>80 135<br>ee ee ee | [eae]<br>120<br>70 VGE=20V<br>ef pNP 105 18V Gy<br>60 N O je a<br>15V<br>90<br>Pp 50 12V ee<br>© ‘ 2 75 10V a<br>: 40 \ © Aff] |<br>8V<br>60<br>Po e | we<br>a) NPa) 7V etn<br>30<br>45<br>6V<br>20<br>30 5V<br>10 15<br>pppo| | tN No L- SR<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
8
## IKW50N65F5 High speed switching series fifth generation
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150 150<br>140 Tj=25°C<br>135 Toy) e Tj=150°C e<br>130<br>; P Et<br>120 VGE=20V 120 TE ae<br>1 cl ee as e eeeeeae<br>110<br>105 18V<br>2 | Cows F e<br>100<br>15V<br>90 90<br>d CA<br>12V<br>ei) 7) | 8 OE 80<br>75 10V<br>a tepyy iis 70 Fe<br>8V<br>: 60 =W/Lae 51k 60 P|Eotf | tt fd td<br>7V<br>50<br>eo 2 eee eee<br>45<br>6V 40<br>30 5V Te 30 Pt | | Ty |<br>20<br>Kor) eee<br>15<br>10<br>Seese} EE<br>0 0<br>0 1 2 3 4 5 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>2.50 1000<br>IC=12,5A td(off)<br>IC=25A tf<br>2.25 E IC=50A [m | y td(on) a A ee<br>tr<br>SsS = | a | p | ft | = fT tT htee<br>ef T T<br>2.00<br>BP | |) 100 e ee<br>Ss 1.75 |ey= — wn L eeU<br>= Ree<br>Ber= 1.50 ese a<br>p O eeeee eee<br>LEP popes ree<br>1.25<br>Bey ge 10<br>re cr<br>1.00<br>es ft ttt tt a<br>PCCP) 6BBBeREEEEE<br>0.75<br>PEPER Gece<br>0.50 1<br>0 25 50 75 100 125 150 175 0 30 60 90 120 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical collector-emitter saturation ( a function _V_ GE=15V) of junction temperature
Figure 8. Typical switching times as a Gndaative purrent _T_ vj -450°C _V_ CE=400V, _V_ GE =15/0V, _r_ G=12 Ω , Dynamic test Figure E)
9
~~High speed switching series fifth generation~~ IKW50N65F5
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**----- Start of picture text -----**<br>
1000<br>td(off) ta1 td(off) a a a<br>1000 tf tf<br>= td(on) SSS] FE td(on) eee<br>1 tr a a tr<br>: a I re<br>— — ——— a a<br>a a ee po ——<br>iF e b,A=F 100 E a sse<br>CE —————————————<br>ia 100 ———————— aa aes a<br>= — es ee ee ee cee ee eee A a<br>a a ce eee<br>9 es ee ee ee ve Se Sea a A<br>Sf ol [eee]<br>Siew ESSE<br>10<br>ee eee<br>. 10 Se . OOOS<br>a _<br>pf a eeee<br>PE EET a<br>es a a<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =25A,Dynamic test circuit in I C =25A, r G=12 ,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
6.0 11<br>typ. Eoff<br>/<br>5.5 min. 10 Eon<br>max. Ets<br>i ee /<br>gy) oe 9 esFe /<br>5.0<br>8<br>e> 4.5 AL f t (¢p) 4<br>O = tL yemy E e/<br>7<br>pee) Pe<br>4.0<br>ty5 MoT Tr aL 25- 6 {itil iA/<br>aca” 3.5 ~~ . ~sS = orWw F / 7<br>5<br>3.0<br>-=e:E [ow: ~ ~ TSK~~ > | oOxr37Zz 4 ERReAraas// : 4 Wa y<br>2.5<br>5 SE Le<br>Lu _ ~ = 3 7| f<br>3 2.0 en i 2 no<br>a) x ; |<br>1.5 1 Lea<br>7 — |<br>eee r~<br>1.0 0<br>eee ee<br>0 25 50 75 100 125 150 0 30 60 90 120 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.5mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=12 Ω ,Dynamic test Figure E)
10
IKW50N65F5
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2.50 1.0<br>Eoff Eoff<br>2.25 Eon 0.9 Eon<br>Ets Ets<br>FL OIY]7 ELLE ae<br>2.00 “ 5 0.8 <<br>5 vi ttt lay, Pe p | ee TT“<br>J or) Leo<br>or)e f it<br>1.75 0.7<br>a | te | [p] [e]<br>eee 1.50 LZ _ 0.6 eee—_—<br>_ ee<br>1.25 0.5<br>ffpea | tteYe be- = ffeB Ler= a<br>a aT oO<br>oO 1.00 Va -- a 0.4<br>L a a L<br>0.75 0.3<br>Bilges ip iew | rte| Lr] 8 | |<br>ee el<br>0.50 0.2<br>0.25 0.1<br>p> abry [ttt] | Urry<br>0.00 0.0<br>Tei ett tts LEEPT<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =25A, Dynamictest circuit in I C =25A, r G=12 ,Dynamictest circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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1.2 16<br>Eoff 130V<br>Eon 520V<br>E Ets R] 14 Eby<br>1.0<br>x ee eed 4;<br>2 e ea ZL) /<br>12<br>0.8<br>e 5~ ey 7 - <F 10 eeAy,<br>7<br>& 7 4 fe) /<br>er 0.6 er¥ E 8 Pe e<br>6<br>L 0.4 Zz Ee<br>E v<br>4<br>» )<br>PPP<br>0.2<br>2<br>oe ee ee<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100 120<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=50A)
_T_ vj =150°C, _V_ GE=15/0V,
_I_ C =25A, _r_ G=12 Figure E)
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IKW50N65F5
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**----- Start of picture text -----**<br>
1<br>1E+4 | q CCiesoes ce ] ee ee )... PTSee Ooa eeoeee o ee N et o<br>Cres<br>eS, He<br>_ —_— _—_ —_————— S a a a eect aZo-—aail<br>oO PD 9s D=0.5<br>0.2<br>1000 e s LS HY<br>0.1 0.1<br>0.05<br>WW a ar al<br>0.02<br>Zz FN a a a 7CTnace AN Ml Cn<br>0.01<br>Se CC TTT<br>G0 100 SS s n eel)erOe ee | single pulse i |<br>SR<br>0.01<br>10 eee Zz Co e Re iil<br>——————————————————— ee a -- [I]<br>——— ce PE ty Ha<br>PUTTIN ZA TTI TL exer co-raree Il<br>a UTI PAI | SEM CITPTET<br>i: 1 2 3<br>ri[K/W]: 0.1621884 0.2278266 0.109985<br>τ i[s]: 8.6E-4 0.01112208 0.09568113<br>1 FPi | | | ft| 0.001 ul | A<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 17.
> Figure 18. IGBT ( _D_ = _t_ p/T)
( _V_ GE
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130<br>Tj=25°C, IF = 25A<br>UII = 1 eee ee ee Loom 120 T = Tj=150°C, IF T = 25A T.<br><= eeee<br>TTT TT,TTT<br>110<br>WW D=0.5 TTT TTT<br>Ht} | I =<br>a<br>0.2<br>at a 100<br>ee 0.1 Tg LS<br>¢ ee dl 0.05 =<br>- 0.1 comctmaic TL MM & 90 LESE<br>pa Ee 0.02 oe<br>x SAre Teoe LO TT Lu> ~N<br>S HLA ee cee 0.01 CCT oO 80 TH<br>rd 0 i =<br>single pulse<br>ti ST i in 70 Py] ) ft yd fy<br>= BS Ml Ba i oe |<br>Z6 AAT or L<br>0.01 60<br>2 TIM) & |e<br>Zz SSS|ee Set ee|a|| era 7 Th TT i<br>s |PTI | | TIF ~~ i<br>F AP ATP |! 50 -— |<br>at TZCCMA TT ETN coe, cet —_ ll —<br>ai git i: 1 2 3 4 40<br>ri[K/W]: 0.4131024 0.4494995 0.4867563 0.1506418<br>τ i[s]: 1.4E-4 1.3E-3 0.01007841 0.09232929<br>a | TT TT TT TT T<br>0.001 30<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 500 600 700 800 900 1000 1100 1200 1300 1400 1500<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/s]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20. Typical of diode ( _V_ R=400V)
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IKW50N65F5
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1.5 25<br>Tj=25°C, IF = 25A Tj=25°C, IF = 25A<br>1.4 Tj=150°C, IF = 25A 23 Tj=150°C, IF = 25A<br>1.3<br>| poe, 21 Foe<br>Lu 1.2 = Zz Z<br>ee Saecennenn<br>ina — ia 19<br>1.1<br>e few ||<br>5 e 17 fie<br>ie 1.0 =) tt<br>eeee 1<br>BP > lee<br>3 0.9 > 15 / ZO<br>0.8<br>gex ttt ttt ttt) 13 | |perttt |<br>Bitte Ww a<br>0.7<br>ds 11 Peery yyy<br>eit 9)<br>uw 0.6 etter ey i>§<br>9<br>0.5<br>| 0.4 Set ty E E 7 EE [EEE]<br>0.3 5<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
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Figure 22. Typical<br>function<br>( V R=400V)<br>**----- End of picture text -----**<br>
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0 81<br>Tj=25°C, IF = 25A Tj=25°C<br>-50 ee Tj=150°C, IF = 25A ee 72 e Tj=150°C ee<br>-100<br>:a tidy 63 |<br>-150 < |<br>54<br>£ -200 ow<br>:5 ~~ ia 45 aaa/<br>© -250 Q<br>36<br>PLP<br>-300 = = /<br>8 SN |<br>27<br>PENN™ 8 /<br>2 -350 — > o<br>ET AKL 18<br>-400<br>oo~t Pe /<br>-450 PPLE 9 LEE AE<br>[J /<br>i<br>-500 0<br>500 700 900 1100 1300 1500 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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2.0<br>IF=13,5A<br>IF=27A<br>IF=54A<br>e s ee<br>1.8 e<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>aeQ 1.4 eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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High�speed�switching�series�fifth�generation
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## **Package Drawing PG-TO247-3**
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IKW50N65F5
High�speed�switching�series�fifth�generation
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## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IKW50N65F5
## IKW50N65F5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydata sheet|
|1.2|2013-12-18|New MarkingPattern|
|2.1|2015-05-05|Final data sheet|
## **Information**
## **Warnings**
endangered.
17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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