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IKW50N65ES5XKSA1
IGBT, 80 A, 1.35 V, 274 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP™ 5
- Power Dissipation: 274W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.85 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
IGBT TRENCHSTOP[TM]
IKW50N65ES5 650V TRENCHSTOP TM _ 5 high speed soft switching duopak
## IKW50N65ES5
## TRENCHSTOP[TM]
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>¢ Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full rated RAPID 1 fast antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant =<br>*« Complete product spectrum and PSpice Models: Gi,<br>http://www.infineon.com/igbt/<br>Applications:<br>« Resonant converters yf<br>¢ Uninterruptible power supplies<br>* Welding converters<br>* Mid to high range switching frequency converters<br>1<br>Package pin definition: 2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW50N65ES5|650V|50A|1.35V|175°C|K50EES5|PG-TO247-3|
2
IKW50N65ES5
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## TRENCHSTOP[TM] �5�soft�switching�IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.�2.3,��2015-11-18
IKW50N65ES5
TRENCHSTOP[TM] �5�soft�switching�IGBT
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||80.0<br>60.5|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||200.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||200.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||80.0<br>60.5|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||200.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||274.0<br>137.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.55|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.63|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.3,��2015-11-18
4
IKW50N65ES5
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## TRENCHSTOP[TM] �5�soft�switching�IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.70<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3100|-|pF|
|Output capacitance|_C_oes||-|88|-||
|Reverse transfer capacitance|_C_res||-|12|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|27|-|ns|
|Turn-off delaytime|_t_d(off)||-|127|-|ns|
|Fall time|_t_f||-|34|-|ns|
|Turn-on energy|_E_on||-|1.23|-|mJ|
|Turn-off energy|_E_off||-|0.55|-|mJ|
|Total switchingenergy|_E_ts||-|1.78|-|mJ|
Rev.�2.3,��2015-11-18
5
IKW50N65ES5
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## TRENCHSTOP[TM] �5�soft�switching�IGBT
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|141|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.50|-|mJ|
|Turn-off energy|_E_off||-|0.25|-|mJ|
|Total switchingenergy|_E_ts||-|0.75|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1150A/µs|-|70|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.25|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|25.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2120|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1370A/µs|-|58|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.86|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2125|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|26|-|ns|
|Turn-off delaytime|_t_d(off)||-|151|-|ns|
|Fall time|_t_f||-|47|-|ns|
|Turn-on energy|_E_on||-|1.63|-|mJ|
|Turn-off energy|_E_off||-|0.85|-|mJ|
|Total switchingenergy|_E_ts||-|2.48|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|46|-|ns|
|Turn-on energy|_E_on||-|0.79|-|mJ|
|Turn-off energy|_E_off||-|0.45|-|mJ|
|Total switchingenergy|_E_ts||-|1.24|-|mJ|
6
Rev.�2.3,��2015-11-18
IKW50N65ES5
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## TRENCHSTOP[TM] �5�soft�switching�IGBT
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1150A/µs|-|115|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|38.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1550|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1370A/µs|-|92|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|35.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2010|-|A/µs|
Rev.�2.3,��2015-11-18
7
IKW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
275 90<br>250 Kit<br>t | ttf 80 t f | fd<br>225<br>NPP CN<br>70<br>200<br>PENCE? 60 EON<br>ey 175 oN<br>150 50<br>PL | ds<br>Bf 125 AKUNE ye 40 P KN<br>100<br>pe] PP NP Pre 30 PP PN<br>75<br>20<br>50<br>N e eee<br>s 10<br>25 LA<br>0 FFT TrTCIN UL 0 TL<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
150 150<br>VGE = 20V VGE = 20V<br>135 18V T/T 135 18V TTT =<br>15V 15V<br>120 120<br>tj WZ<br>12V 12V<br>105 105<br>10V 10V<br>90 8V 90 8V<br>7V 7V<br>75 75<br>: Ti]: 72<br>6V 6V<br>fa peel 60 fes 60 oe<br>5V 5V<br>45 45<br>30 OR 30 LN<br>15 15<br>-y\<br>0 | 0 L AN<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=175°C)
8
IKW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
150 3.0<br>Tvj = 25°C IC = 25A<br>135 | Tvj = 150°C | IC = 50A } | | ft<br>IC = 100A<br>=Jil l). ET<br>z 2.5<br>TE Ee<br>120<br>al eo<br>E 105 > > ae<br>2.0<br>iadep] 90 | p) Leeveo<br>a [ag<br>a) WwW<br>gs fe<br>xv 75 E 1.5 | _<br>Se 60 ee eeee<br>Ww= | (e)a ee<br>1.0<br>Te<br>45<br>. _<br>30 eee / eee:O<br>0.5<br>15<br>ett iA/1 | oe pfee eefF [ff]<br>0 0.0<br>2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6. Typical a function ( _V_ GE=15V)
**==> picture [489 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 1000<br>i 1 td(off) heaA ee ee i td(off) po<br>| tf ee ee ee ee | tf ee ee<br>td(on) td(on)<br>tr tr<br>a | tT ft | | | ft ft ff —— | Pee————<br>p t tT tT | Pt ee e e<br>uwCeee2 100 |eee eeopeeeeeeeeeeee ee 100 —— b oee<br>= ass a a a ee aee ee eee |= aeeaee ee ee oe<br>F a a eee ee es eesee<br>O po f | ft feet pt | | | og po eee<br>oa a a<br>=“=<br>10 10<br>EoITRUTETee eeTdoo eike [_Let<br>ee a es<br>a A a<br>ee ee ee eee a ee es<br>ee ee ee ee ee a es<br>a<br>1 1<br>0 25 50 75 100 125 150 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
Figure 8. Typical **resistance**
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=8.2 Ω , _R_ Goff=8.2 Ω , test circuit in Figure E)
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =50A, dynamic test Figure E)
9
~~5 soft switching IGBT~~ IKW50N65ES5
TRENCHSTOP[TM]
**==> picture [474 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 6<br>SE<br>ta1 td(off) a a typ.<br>| tf po > min.<br>I td(on) po max.<br>tr 5<br><x ~<br>a EFg Toe<br>a 100 cr ee 4 TKS<br>— a es _I | ss<br>Lu a a ——<br>= poe 7p) _<br>F a ee ee Mu ><br>3<br>Oo ee ee es = —><br>—=o ee Ee ——~L<br>E E ~~<br>ep)= 10 a es Ee= 2 ~~ ~<br>a a a Lu ~~<br>a<br>a ee Ee<br>es 5<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =50A, _R_ Gon=8.2 Ω , _R_ Goff=8.2 Ω , dynamic circuit in Figure E)
Figure 10.
( _I_ C=0.5mA)
**==> picture [471 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
14 5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>12<br>4<br>E P<br>10<br>Lu(op) | / ie)di 2 “<br>7) Lu c<br>/ n -<br>ap)aa 7 / aa7) 3 aaaz —<br>> 8<br>O/ O rae<br>im 7 wi -<br>6<br>2<br>Z / 4 Z = —_<br>=3 4 ara‘ ay OEan = i<br>a “ 7 no 1 a<br>2<br>Y 7 - |<br>ce ~<br>one p ot<br>0 0<br>| |<br>0 25 50 75 100 125 150 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=8.2 Ω , _R_ Goff=8.2 Ω , test circuit in Figure E)
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =50A, dynamic test Figure E)
10
~~5 soft switching IGBT~~ IKW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
3.0 4.0<br>Eoff Eoff<br>Eon Eon<br>Ets 3.5 Ets<br>2.5<br>> wea > J<br>3.0<br>Ww Leo Ww L<br>op)o 2.0 == Ped ep)o “eo Z<br>2.5<br>—! “7 a v7<br>><br>O_<br>1.5 2.0<br>ff == ee ffO Fa “ Z4<br>9 i —_ —_ © a L Zz<br>1.5<br>1.0<br>1.0<br>2 a 3 7 _—<br>a 0.5 ee<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =150°C, V GE=0/15V,<br>I C =50A, R Gon=8.2 Ω , R Goff=8.2 Ω , dynamic test I C =50A, R Gon=8.2 Ω , R Goff=8.2 Ω , dynamic test<br>circuit in Figure E) circuit in Figure E)<br>16 |<br>V CC 1E+4 Cies<br>V CC Coes<br>14 Es). —— { yp) H © Cres Ll [_——<br>// a ——— a<br>S / a e e e ee<br>12<br>1000<br>4 7 / po<br><J5 10 / / rotfm]Ww _(apTa a<br>S O OR<br>Z pNP<br>8<br>100<br>i a a<br>uy 6 fj S a<br>= . po<br>s a ee ee ee ee<br>4<br>10 pn<br>a es<br>a<br>2 ase<br>a<br>0 1<br>0 20 40 60 80 100 120 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=50A)
Figure 16.
( _V_ GE
11
IKW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1 1<br>| EE<br>PT PT a<br>co oo a |<br>=_ a | en a a et<br>a epee HS A A<br>8 0 a D = 0.5 ca D = 0.5<br>CIC | EI ea<br>0.2 0.2<br>ge 0.1 0.1 TTT = 0.1 eect 0.1 l |il|il<br>ia Cee ct eo | ia EH tae a|<br>0.05 0.05<br>a]S= SeeCeae a a ti eeee 0.02 CN S= SeTN ZT9 iil aLe 0.02 a<br>< HTT eee, CHM = FLATT ICH<br>0.01 0.01<br>z RT Ae | es en |<br>SE A ee ee z te<br>single pulse single pulse<br>ST MtEfi] ST Z eT a tH<br>Bee IM eae<br>0.01 0.01<br>ioO A re er T|| i coll J Lar Va IT Il<br>2 Pe Ee eC ee tee Ct<br>s BateA || ae-- |ll] s aYTw/eATTY TT Re-- Ill{i}<br>E PTT VAT TCT TTT l= A i | Ii<br>- PTEBU FA RA UTM A TTTTMLeecostes lll SOCra TNA LLU T CT ereTTT FTESosa sTTTl<br>i: 1 2 3 4 5 i: 1 2 3 4<br>ri[K/W]: 0.030556 0.137971 0.162007 0.15972 0.059746 ri[K/W]: 0.066623 0.198269 0.201696 0.163411<br>τ i[s]: 2.4E-5 3.1E-4 3.1E-3 0.024936 0.134448 τ i[s]: 2.1E-5 3.7E-4 5.5E-3 0.057467<br>0.001 DL ee [ CT TT TT 0.001 |)H | LIT EP<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
180 3.5<br>Tvj = 25°C, IF = 50A Tvj = 25°C, IF = 50A<br>E Tvj = 150°C, I O F = 50A ) Tvj = 150°C, IF = 50A<br>160<br>| UE<br>3.0<br>— oO<br>140<br>w~ g 2.5<br>2 120 ~~ &<br>F ~~ =<br>Wwpfeee: 100 eein 2.0<br>80<br>1.5<br>Wu 60 n'<br>POPE |}) pee<br>1.0<br>ow ff,<br>40<br>eee: 0.5 rT PPT<br>fy<br>20<br>0 0.0<br>700 800 900 1000 1100 1200 1300 700 800 900 1000 1100 1200 1300<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
Figure 20.
( _V_ R=400V)
12
IKW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
50<br>Tvj = 25°C, IF = 50A<br>e Tvj = 150°C, IF = 50A e<br>< 40 ee<br>kK<br>ie ao<br>x eee<br>efO 30 oea<br>av ee<br>(e)<br>Pf oe TE<br>20<br>BtiS tT| te<br>ff<br>10<br>ep] | | | |<br>0<br>700 800 900 1000 1100 1200 1300<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
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**----- Start of picture text -----**<br>
-500<br>Tvj = 25°C, IF = 50A<br>-750 | Tvj = 150°C, IF = 50A ee<br>ee 1000 ee<br><, th<br>LLa -1250-1500 NND. e ~<br>Wwim -1750 ee~<br>x EN<br>-2000<br>Ww -2250 \<br>Q<br>O<br>-2500<br>ye | | AN<br>-2750<br>-3000<br>700 850 1000 1150 1300<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 22.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
150 l 2.50<br>Tvj = 25°C IF = 25A<br>135 Tvj = 150°C I) IF = 50A<br>eeaa / 2.25 IF = 100A<br>120<br>2.00<br>ee e e<br>105<br>Zzim Oo<x 1.75<br>90<br>5 | | | of 8<br>E 3<br>3B ><br>a 75 a 1.50<br></<<br>ne<br>= 60<br>x | = 1.25<br>ef fh/ O -—————_+———_ |<br>45<br>1.00<br>30<br>0.75<br>15<br>0 0.50<br>7 ee ee<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
13
IKW50N65ES5
TRENCHSTOP[TM] �5�soft�switching�IGBT
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
14
Rev.�2.3,��2015-11-18
IKW50N65ES5
TRENCHSTOP[TM] �5�soft�switching�IGBT
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## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
15
Rev.�2.3,��2015-11-18
IKW50N65ES5
## TRENCHSTOP[TM]
## IKW50N65ES5
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2015-08-12|Preliminarydata sheet|
|2.1|2015-09-22|Final data sheet|
|2.2|2015-10-16|Minor change Ic(VCE)Fig. 3 and Fig. 4|
|2.3|2015-11-18|Max ratingIFpuls corrected|
## party.
## **Warnings**
16
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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