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IKW50N65EH5XKSA1
IGBT, 80 A, 1.65 V, 275 W, 650 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:275W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 275W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.75 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
IKW50N65EH5
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High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with full-rated<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full-rated RAPID 1 fast and soft antiparallel<br>diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications =<br>¢ Pb-free lead plating; ROHS compliant a,<br>* Complete product spectrum and PSpice Models: re liteg,<br>http://www.infineon.com/igbt/<br>Applications:<br>‘d<br>* Uninterruptible power supplies<br>* Solar converters<br>* Welding converters<br>* Mid to high range switching frequency converters 1<br>2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW50N65EH5|650V|50A|1.65V|175°C|K50EEH5|PG-TO247-3|
Datasheet www.infineon.com
2017-07-27
IKW50N65EH5
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## High�speed�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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Datasheet
IKW50N65EH5
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## High�speed�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||80.0<br>50.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||200.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||200.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||80.0<br>50.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||200.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||275.0<br>138.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw, PG-TO247-pin123<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.55|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.63|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Defined by design. Not subject to production test.
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## High�speed�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.33<br>1.30|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1<br>2000|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|90|-||
|Reverse transfer capacitance|_C_res||-|12|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|25|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|172|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|1.50|-|mJ|
|Turn-off energy|_E_off||-|0.50|-|mJ|
|Total switchingenergy|_E_ts||-|2.00|-|mJ|
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## High�speed�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|173|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.57|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.73|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=25pF|-|81|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1000|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=25pF|-|56|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|19.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1500|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|190|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|2.00|-|mJ|
|Turn-off energy|_E_off||-|0.60|-|mJ|
|Total switchingenergy|_E_ts||-|2.60|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|203|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.95|-|mJ|
|Turn-off energy|_E_off||-|0.25|-|mJ|
|Total switchingenergy|_E_ts||-|1.20|-|mJ|
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## High�speed�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=25pF|-|108|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|36.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2000|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=25pF|-|98|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|28.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1500|-|A/µs|
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**----- Start of picture text -----**<br>
300<br>_—EEeee<br>100<br>a 250 NN<br>Pei<br>PeTTT<br>eBx eeLPTeetii TTT ies2 200 KEP Ld<br>ocSe 10 :<br>a) PF <x<br>O et —<br>| a | aN<br>oc eset 150 \<br>ee |e \<br>oO a a1<br>5 PT TT or<br>ee |<br>a LN = 100 \<br>O<br>1<br>a<br>ee<br>ee eee 50 Y<br>not for linear use<br>0.1 [— 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs, temperature<br>I Cmax defined by design - not subject to ( T vj ≤ 175°C)<br>production test)<br>90 150<br>VGE = 20V<br>80 135 18V<br>P t tT | | eee 15V<br>120<br>70 N op} ERE re<br>12V<br>105<br><| N|) Je Fb 10V ae<br>60<br>é aoe 8V ioe<br>90<br>Dpl 50 oooN de 7V fh<br>:SIN 75<br>6V<br>40<br>:F < SeF 60 | 5V ANI\<br>aN 30 \ a<br>: s | WW<br>45<br>g yO 8 WN<br>| 2010 ee. LR 3015 ACenIX<br>eee,<br>ee | A ee ee<br>0 0<br>e e ee<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
Datasheet
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IKW50N65EH5
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**----- Start of picture text -----**<br>
150 150<br>VGE = 20V Tvj = 25°C<br>135 18V eA 135 Tvj = 150°C<br>15V<br>120 pleeT / | 120 Et<br>ps) ET<br>12V<br>= 105 PSS. 105 FEE e y<br>ZzE 10V Seri? WA 4 E=<br>8V<br>90 90<br>pe] 7V Cry Zzye Lp<br>S| NA| ys |<br>75 75<br>PL 60 6V5V Re— KG 8 60<br>S a tL<br>gs 1 |W ye ft<br>45 45<br>O SKC O<br>| RN EP te<br>30 30<br>RA /<br>Li ie<br>15 YN 15 /<br>SF [ifeosctry]<br>LaAA <<<br>0 IN | } 0 L L<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 3 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>4.0 1000<br>IC = 25A aa td(off)<br>IC = 50A a ee ee ee tf I<br>_ 3.5 = IC = 100A | po td(on)<br>tr<br>= ce ee ee eee I<br>: 3.0 ~ _|<br>100<br>D 2.5 | | |<br>o = (0= esa aee ee eea ee<br>2.0<br>E — =| 9 ee es a eee<br>a 1.5 a a = “<br>—— — ele<br>10<br>im ”. a<br>4 a<br>Ss} 1.0 a a a aee<br>.<br>0.5<br>0.0 1<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=12 Ω , _R_ G(off)=12 Ω , test circuit in Figure E)
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IKW50N65EH5
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**----- Start of picture text -----**<br>
1000<br>I|Ja ttd(off)f aet feeee<br>td(on)<br>tr<br>| i ee ee eee<br>a<br>wane eee<br>cS2-17ZL |)<br>Yn<br>Ww<br>= _<br>= ol<br>o 100 p_}__|_{__} {| |<br>= po er<br>i= aee ce<br>cn a ee ee eee<br>cl<br>pa |<br>:<br>10<br>5 15 25 35 45 55 65 75 85<br>R G , GATE RESISTANCE [ Ω ]<br>t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1000<br>Hi ttd(off)f 2 a<br>td(on)<br>tr<br>es<br>———EEEEe<br>Pte= 100 EEE]a as tf<br>ip) a e eseees ee<br>im= a eea a<br>- ssee<br>g eee e<br>=<br>10<br>=<br>——————<br>a a<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 9. Typical<br>resistance<br>**----- End of picture text -----**<br>
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=0/15V,=0/15V, _I_ C =50A, _R_ G(on)=12=12 Ω , _R_ G(off)=12=12 Ω , test circuit in Figure E)
**==> picture [537 x 366] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,=0/15V,<br>V GE =0/15V, I C =50A, dynamic test circuit in I C =50A, R G(on)=12=12 Ω , R G(off)=12=12 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>6.0 12<br>typ. Eoff<br>min. 11 | Eon /<br>5.5<br>max. Ets<br>Ww 10<br>pe<br>5.0<br>a ~ = /<br>_! ~~ i 9<br>> 4.5 a Lu vA<br>(a) ~. dp) 8<br>o 4.0 ~ o / y,<br>ee — > 7<br>3.5 6<br>x hw —| ~~ 7 Wi ; 7<br>5<br>3.0<br>: — 4<br>2.5 ~ NY = 7<br>ke ~N ~ =n 3 47 7<br>Ww Tp— eT Le<br>“.~ 2.0 y 2 “Y~ ZO<br>1.5<br>1<br>—<br>ee<br>1.0 0<br>25 50 75 100 125 150 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.5mA) (inductive load, T vj =150°C, V CE=400V,=400V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =150°C, _V_ CE=400V,=400V, _V_ GE =0/15V, _R_ G(on)=12 Ω , _R_ G(off)=12 Ω , dynamic test circuit in Figure E)
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IKW50N65EH5
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**----- Start of picture text -----**<br>
7 3.0<br>><br>Eoff Eoff<br>Eon Yo7 Eon eT _-<br>6 Ets 74 Ets a<br>“ 2.5 a =<br>J “ ys eo<br>(op)Ww 5 ? Z (ep)Ww Leo L a7 _—<br>icp)”7) Yo, ; g7)8 2.0 Bz _— 7<br>> 4 7 —— va ao<br>© “ a7 © _a<br>Ww ZY 2 y 1.5<br>3<br>ii Lo =< -_ o<br>Z / - Zz<br>5 |“ | : 1.0<br>E5 2 7peaaE5 0.5<br>1<br>0 0.0<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =50A, dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =50A, _R_ G(on)=12 Ω ' _R_ G(off)=12 Ω , test circuit in Figure E)
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**----- Start of picture text -----**<br>
3.5 16 Ld<br>Eoff VCE = 130V /<br>Eon VCE = 520V<br>Ets ““ 14 J //<br>3.0 a<br>7<br>= a Ss 12<br>2.5<br>io) “ 7 O) /<br>op) “ 4 x<br>10<br>—! 7 7 - /)<br>> 2.0 Yo fe)<br>O 4 < 7 =- y,<br>Wi “ E 8<br>Zz “ a =<br>1.5<br>g raw ui 6 {__<br>= 7 Za E<br>= 1.0 7 -<br>4<br>0.5<br>crete} 2 FE<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100 120<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=50A)<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =50A, _R_ G(on)=12 Ω ; _R_ G(off)=12 Ω , test circuit in Figure E)
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## IKW50N65EH5
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1E+4 sr Nae<br>——————— PTT TUTTE TTT TIT TIT<br>{ a _—— IM TI TTA ei Te<br>a a aaa miilleaill<br>a = EE | D = 0.5<br>1000<br>E E Zzca 0.1 /—_—- HeeYYAA | 0.2<br>0.1<br>Ue=Woop aa aa a ee ee aeae| A 0.050.02 |<br>Z Tee) 0.01<br>100 ee ee ee < ee peel Ballll|<br>single pulse<br><7 ee WrVJB izPa(itz7<br>A- 0.01 ell)(eee (foal| cluit<br>a ae ee ee eee a<br>_ ete ee Zz7) YT| Tt TTI AAT ie |RII<br>10 [_—eee| § aan Cy HF<br>—— Cies I AT etre coeriee l l<br>Coes i:ri[K/W]: 19.5E-3 20.125039 30.132857 40.256654 50.021551 62.1E-3<br>E Cres ee PTI τ i[s]: 2.5E-5 ATU 2.3E-4 TEI 2.1E-3 TINE 0.012197 0.104256 CINE 1.840158 HT<br>1 en -re ee 0.001 | LIT Pe<br>0 5 10 15 20 25 30 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
= YY<br>Cae D = 0.5<br>ce<br>0.2<br>Zz 0.1 a ZA<br>imaa OCASept eoamlTATCao 0.10.05 PTa rh<br>= iL a. |<br>7 PTIA TTT 0.02 1<br>< a 0.01<br>TERE Ttt eA eel single pulse MM<br>Beny<br>uwBGi 0.01 on |e YETZA IIIVAACUI ILEI LUAN<br>2) em ea A||<br>Zz Re PA tr: Ro [I]<br>s YT TTA TT _- {ll<br>- | il<br>- CLUTIE AT VAI ATT LTTE TTI TL VN e.2hve, LATE excries ETE Il<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.013431 0.146325 0.159015 0.278506 0.025538 2.1E-3<br>τ i[s]: 2.6E-5 2.1E-4 2.0E-3 0.01147 0.091987 1.834403<br>0.001<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s]<br>Figure 19. Diode transient thermal impedance as a<br>function of pulse width<br>( D = t p/T)<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
180 SE<br>\ Tvj = 25°C, IF = 50A<br>Tvj = 150°C, IF = 50A<br>160<br>SoS | E FT ]<br>P N]<br>140<br>| Ld td<br>z<br>nT .<br>120<br>=<br>F ‘NQ<br>\<br>ra, 100 PNT TM fd<br>Ne \<br>3 ae .<br>80 NOS.<br>Luoor 60 KSoN_—a7<br>4020 Py PTT Ly py dy<br>0<br>500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 20. Typical of diode ( _V_ R=400V)
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IKW50N65EH5
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**----- Start of picture text -----**<br>
3.5 es 70 es<br>Tvj = 25°C, IF = 50A Tvj = 25°C, IF = 50A<br>Tvj = 150°C, IF = 50A Tvj = 150°C, IF = 50A<br>3.0 | | | 60 | | | /<br>Ww: 2.5 eeeae RT Eb: 50 LLL ELA./<br>ra = Zz<br><x =-o ig 7<br>a w 7<br>O =)<br>% 2.0 S) 40 /<br>Lu > Z<br>a Ww a<br>O fe)> 4<br>orLu 1.5 07WwWwW 30 Za Bp1<br>mo 1.0 [| if 20 le<br>° aan ° +t.<br>0.5 10<br>0.0 0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 21.
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**----- Start of picture text -----**<br>
( V R=400V)<br>**----- End of picture text -----**<br>
Figure 22.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
0 150<br>Tvj = 25°C<br>-1000 etPSS ~N ~]ET 135 =] Tvj = 150°C |}|<br>a 2000<br>Poors OE<br>2} f } |RAT_ \ 120<br>3000<br>es<br>oO -4000 <x 105<br>—!<br>-5000<br>2 | Ww] 90<br>d PITT PEA) | | ot Ue<br>s foKN<br>fe) -6000 5 /<br>75<br>e fil a /<br>-7000<br>< VA) 8<br>60<br>»wi -8000 | [tii] ti i faa\ys f |<br>raew -9000 {tilti} | | LLye" 45<br>0000<br>30<br>-11000 Tvj = 25°C, IF = 50A<br>Tvj = 150°C, IF = 50A<br>15<br>-12000<br>P E R E pA | |<br>-13000 0<br>500 700 900 1100 1300 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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IKW50N65EH5
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2.00<br>1.75<br>1.50<br>Lu<br>< 1.25<br>ee<br>a 1.00 i ee<br>m4<br><x<br>o 0.75<br>;<br>LL 0.50 P| | tt<br>0.25<br>IF = 25A<br>IF = 50A<br>IF = 100A<br>0.00<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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## High�speed�series�fifth�generation
## **Package Drawing PG-TO247-3**
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IKW50N65EH5
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## High�speed�series�fifth�generation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IKW50N65EH5
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## High�speed�series�fifth�generation
## **Revision�History**
IKW50N65EH5
## **Revision:�2017-07-27,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2015-05-20|Final data sheet|
|2.2|2017-07-27|Correction Fig.1|
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Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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